公开(公告)号：US20070057689A1

公开(公告)日：2007-03-15

申请号：US11556463

申请日：2006-11-03

申请人： Back-Won LEE

发明人： Back-Won LEE

IPC分类号： G01R31/00

CPC分类号： G09G3/006 ,  G02F2001/136254 ,  G09G3/3677 ,  Y10S345/904

摘要： In a mother substrate for a lower substrate, a substrate for a display panel and a method of manufacturing a display panel, the substrate for the display panel includes a lower substrate and an upper substrate facing the lower substrate. The lower substrate includes an inspection line that receives a first inspection signal externally provided, a gate driving part that outputs a second inspection signal in response to the first inspection signal from the inspection line, and a pixel part driven in response to the second inspection signal. The inspection line is disposed on a grinding area. Thus, the display panel may have an enhanced productivity and an improved yield, on which the gate driving part is formed.

摘要翻译： 在用于下基板的母基板，显示面板用基板和显示面板的制造方法中，显示面板用基板包括下基板和面向下基板的上基板。 下基板包括接收外部提供的第一检查信号的检查线，响应于来自检查线的第一检查信号而输出第二检查信号的栅极驱动部和响应于第二检查信号而被驱动的像素部 。 检查线设置在研磨区域上。 因此，显示面板可以具有增强的生产率和改善的成品率，在其上形成栅极驱动部分。

公开(公告)号：US20050145849A1

公开(公告)日：2005-07-07

申请号：US11056259

申请日：2005-02-14

申请人： Seung-Hwan Moon ,  Back-Won Lee

发明人： Seung-Hwan Moon ,  Back-Won Lee

IPC分类号： G09G3/36 ,  G09G3/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  H01L27/04 ,  H01L27/12 ,  H01L29/417 ,  H01L29/786 ,  H01L29/768

CPC分类号： H01L29/78696 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/66765 ,  H01L29/78669

摘要： An amorphous-silicon thin film transistor and a shift resister shift resister having the amorphous-silicon TFT include a first conductive region, a second conductive region and a third conductive region. The first conductive region is formed on a first plane spaced apart from a substrate by a first distance. The second conductive region is formed on a second plane spaced apart from the substrate by a second distance. The second conductive region includes a body conductive region and two hand conductive regions elongated from both ends of the body conductive region to form an U-shape. The third conductive region is formed on the second plane. The third conductive region includes an elongated portion. The elongated portion is disposed between the two hand conductive regions of the second conductive region. The amorphous-silicon TFT and the shift resister having the amorphous TFT reduce a parasitic capacitance between the gate electrode and drain electrode.

公开(公告)号：US20050012518A1

公开(公告)日：2005-01-20

申请号：US10777990

申请日：2004-02-11

申请人： Back-Won Lee

发明人： Back-Won Lee

IPC分类号： G02F1/13 ,  G01R31/00 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/00 ,  G09F9/30 ,  G09G3/00 ,  G09G3/36

CPC分类号： G09G3/006 ,  G02F2001/136254 ,  G09G3/3677 ,  Y10S345/904

摘要： In a mother substrate for a lower substrate, a substrate for a display panel and a method of manufacturing a display panel, the substrate for the display panel includes a lower substrate and an upper substrate facing the lower substrate. The lower substrate includes an inspection line that receives a first inspection signal externally provided, a gate driving part that outputs a second inspection signal in response to the first inspection signal from the inspection line, and a pixel part driven in response to the second inspection signal. The inspection line is disposed on a grinding area. Thus, the display panel may have an enhanced productivity and an improved yield, on which the gate driving part is formed.

摘要翻译： 在用于下基板的母基板，显示面板用基板和显示面板的制造方法中，显示面板用基板包括下基板和面向下基板的上基板。 下基板包括接收外部提供的第一检查信号的检查线，响应于来自检查线的第一检查信号而输出第二检查信号的栅极驱动部和响应于第二检查信号而被驱动的像素部 。 检查线设置在研磨区域上。 因此，显示面板可以具有增强的生产率和改善的成品率，在其上形成栅极驱动部分。

公开(公告)号：US08610179B2

公开(公告)日：2013-12-17

申请号：US13193481

申请日：2011-07-28

申请人： Seung-Hwan Moon ,  Back-Won Lee

发明人： Seung-Hwan Moon ,  Back-Won Lee

IPC分类号： H01L27/148

CPC分类号： H01L29/78696 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/66765 ,  H01L29/78669

摘要： An amorphous-silicon thin film transistor and a shift resister shift resister having the amorphous-silicon TFT include a first conductive region, a second conductive region and a third conductive region. The first conductive region is formed on a first plane spaced apart from a substrate by a first distance. The second conductive region is formed on a second plane spaced apart from the substrate by a second distance. The second conductive region includes a body conductive region and two hand conductive regions elongated from both ends of the body conductive region to form an U-shape. The third conductive region is formed on the second plane. The third conductive region includes an elongated portion. The elongated portion is disposed between the two hand conductive regions of the second conductive region. The amorphous-silicon TFT and the shift resister having the amorphous TFT reduce a parasitic capacitance between the gate electrode and drain electrode.

摘要翻译： 具有非晶硅TFT的非晶硅薄膜晶体管和移相寄存器包括第一导电区域，第二导电区域和第三导电区域。 第一导电区域形成在与衬底间隔开第一距离的第一平面上。 第二导电区域形成在与衬底间隔开第二距离的第二平面上。 第二导电区域包括主体导电区域和从主体导电区域的两端延伸的两个手导电区域以形成U形。 第三导电区域形成在第二平面上。 第三导电区域包括细长部分。 细长部分设置在第二导电区域的两个手导电区域之间。 具有非晶硅的非晶硅TFT和移位寄存器减小了栅电极和漏电极之间的寄生电容。

公开(公告)号：US07696974B2

公开(公告)日：2010-04-13

申请号：US11007493

申请日：2004-12-08

申请人： Seung-Hwan Moon ,  Back-Won Lee

发明人： Seung-Hwan Moon ,  Back-Won Lee

IPC分类号： G09G3/36

CPC分类号： G11C19/28 ,  G09G3/3685 ,  G09G2310/0286

摘要： In a shift register and LCD device having the shift register that may be employed in the liquid crystal display device having a large screen size and a large resolution, the shift register includes stages connected with each other and each of the stages have a carry buffer for generating a carry signal. The pull-down transistor of each of the stages of the shift register is divided into a first pull-down transistor and a second pull-down transistor. A power voltage Vona larger than the power voltage Von applied to a clock generator is applied to the shift register. A signal delay due to the RC delay of the gate lines may be minimized, the shift register is independent of the variation of the threshold voltage of the TFTs, and image display quality may not be deteriorated.

摘要翻译： 在具有可以用于具有大屏幕尺寸和大分辨率的液晶显示装置中的移位寄存器的移位寄存器和LCD装置中，移位寄存器包括彼此连接的级，并且每个级具有用于 产生进位信号。 移位寄存器的每个级的下拉晶体管被分为第一下拉晶体管和第二下拉晶体管。 将大于施加到时钟发生器的电源电压Von的电源电压Vona施加到移位寄存器。 由于栅极线的RC延迟引起的信号延迟可能被最小化，所以移位寄存器与TFT的阈值电压的变化无关，并且图像显示质量可能不会恶化。

公开(公告)号：US20070109238A1

公开(公告)日：2007-05-17

申请号：US11555832

申请日：2006-11-02

申请人： Back-Won LEE ,  Seong-Young LEE

发明人： Back-Won LEE ,  Seong-Young LEE

IPC分类号： G09G3/36

CPC分类号： G09G3/3607 ,  G02F1/133707 ,  G02F1/1362 ,  G02F1/1393 ,  G02F2201/123 ,  G09G2300/0852 ,  G09G2300/0876 ,  G09G2320/0276 ,  G09G2320/028

摘要： The liquid crystal display includes a substrate, and pixel electrodes are formed on the substrate, each of which has first and second subpixel electrodes. Each of the first and second subpixel electrodes has at least two parallelogrammic electrode pieces, each of which has lengthwise edges and oblique edges adjacent to the lengthwise edges.

摘要翻译： 液晶显示器包括基板，并且在基板上形成像素电极，每个像素电极具有第一和第二子像素电极。 第一子像素电极和第二子像素电极中的每一个具有至少两个平行四边形电极片，每个电极片具有与纵向边缘相邻的纵向边缘和倾斜边缘。

公开(公告)号：US06845140B2

公开(公告)日：2005-01-18

申请号：US10460856

申请日：2003-06-13

申请人： Seung-Hwan Moon ,  Back-Won Lee

发明人： Seung-Hwan Moon ,  Back-Won Lee

IPC分类号： G02F1/133 ,  G09G3/20 ,  G09G3/36 ,  G11C19/00

CPC分类号： G11C19/28 ,  G09G3/3685 ,  G09G2310/0286

摘要： In a shift register and LCD device having the shift register that may be employed in the liquid crystal display device having a large screen size and a large resolution, the shift register includes stages cascade-connected with each other and each of the stages have a carry buffer for generating a carry signal. The pull-down transistor of each of the stages of the shift register is divided into a first pull-down transistor and a second pull-down transistor. A power voltage Vona larger than the power voltage Von applied to a clock generator is applied to the shift register. A signal delay due to the RC delay of the gate lines may be minimized, the shift register is independent of the variation of the threshold voltage of the TFTs, and image display quality may not be deteriorated.

摘要翻译： 在具有可用于具有大屏幕尺寸和大分辨率的液晶显示装置中的移位寄存器的移位寄存器和LCD装置中，移位寄存器包括彼此串联连接的级，并且每个级具有进位 用于产生进位信号的缓冲器。 移位寄存器的每个级的下拉晶体管被分为第一下拉晶体管和第二下拉晶体管。 将大于施加到时钟发生器的电源电压Von的电源电压Vona施加到移位寄存器。 由于栅极线的RC延迟引起的信号延迟可能被最小化，所以移位寄存器与TFT的阈值电压的变化无关，并且图像显示质量可能不会恶化。

公开(公告)号：US08102340B2

公开(公告)日：2012-01-24

申请号：US12146234

申请日：2008-06-25

申请人： Back-Won Lee ,  Seung-Hwan Moon

发明人： Back-Won Lee ,  Seung-Hwan Moon

IPC分类号： G09G3/36

CPC分类号： G02F1/1345 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2320/0223 ,  G11C19/28

摘要： A driver circuit drives display device and LCD device has a driver circuit that includes driving stages and dummy stage. The driving stage includes output and control terminals. The output terminal of the present stage is connected to the control terminal of the previous state to be cascade-connected each other. The driving stage outputs driving signal for controlling the switching device arranged on the display device through the output terminal. The dummy stage includes dummy output terminal and dummy control terminal. The dummy output terminal is connected to the control terminal of the last driving stage to output dummy output signal for turning on or off the last driving stage. The dummy control terminal is connected to the dummy output terminal to be turned on or off by the dummy output signal. The delay of signals is reduced, thereby enhancing display quality.

摘要翻译： 驱动电路驱动显示装置，LCD装置具有包括驱动级和虚级的驱动电路。 驱动阶段包括输出和控制端子。 本阶段的输出端子连接到先前状态的控制端子以彼此级联连接。 驱动级通过输出端子输出用于控制布置在显示装置上的开关装置的驱动信号。 虚拟级包括虚拟输出端子和虚拟控制端子。 虚拟输出端子连接到最后一个驱动级的控制端子，以输出用于打开或关闭最后驱动级的虚拟输出信号。 虚拟控制端子通过虚拟输出信号连接到虚拟输出端子以被接通或关断。 信号的延迟减小，从而提高显示质量。

公开(公告)号：US07646841B2

公开(公告)日：2010-01-12

申请号：US11697764

申请日：2007-04-09

申请人： Seung-Hwan Moon ,  Nam-Soo Kang ,  Kyung-Eun Lee ,  Back-Won Lee ,  Ji-Hoon Kim

发明人： Seung-Hwan Moon ,  Nam-Soo Kang ,  Kyung-Eun Lee ,  Back-Won Lee ,  Ji-Hoon Kim

IPC分类号： G11C19/00

CPC分类号： G09G3/20 ,  G09G2310/0267 ,  G09G2310/0286 ,  G11C19/28

摘要： A shift register has multiple stages each of which includes a pull-up part to generate a current gate line driving signal having a first state in response to a first control signal and a clock signal, a pull-down part to generate the current gate line driving signal having a second state in response to a second control signal, a pull-up driver to generate the first control signal to control the pull-up part in response to a previous gate line driving signal provided from a previous stage, a following gate line driving signal provided from a following stage, and an input voltage signal externally provided, and a pull-down driver to generate the second control signal to control the pull-down part in response to a third control signal provided from the pull-up driver and the input voltage signal, in which the second control signal swings between first and second voltage levels in association with the input voltage signal that swings between predetermined voltage levels.

摘要翻译： 移位寄存器具有多个级，其中每一级包括上拉部分，用于响应于第一控制信号和时钟信号产生具有第一状态的电流栅极线驱动信号，产生电流栅极线的下拉部分 响应于第二控制信号具有第二状态的驱动信号;上拉驱动器，用于响应于从先前级提供的先前的栅极线驱动信号产生第一控制信号以控制上拉部分;跟随门 从后级提供的线路驱动信号和外部提供的输入电压信号，以及下拉驱动器，以产生第二控制信号，以响应于从上拉驱动器提供的第三控制信号来控制下拉部分 以及输入电压信号，其中第二控制信号与在预定电压电平之间摆动的输入电压信号相关联的第一和第二电压电平之间摆动。

公开(公告)号：US07535027B2

公开(公告)日：2009-05-19

申请号：US11056259

申请日：2005-02-14

申请人： Seung-Hwan Moon ,  Back-Won Lee

发明人： Seung-Hwan Moon ,  Back-Won Lee

IPC分类号： H01L27/15

CPC分类号： H01L29/78696 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/66765 ,  H01L29/78669

摘要： An amorphous-silicon thin film transistor and a shift register shift having the amorphous-silicon TFT include a first conductive region, a second conductive region and a third conductive region. The first conductive region is formed on a first plane spaced apart from a substrate by a first distance. The second conductive region is formed on a second plane spaced apart from the substrate by a second distance. The second conductive region includes a body conductive region and two hand conductive regions elongated from both ends of the body conductive region to form an LI-shape. The third conductive region is formed on the second plane. The third conductive region includes an elongated portion. The elongated portion is disposed between the two hand conductive regions of the second conductive region. The amorphous-silicon TFT and the shift register having the amorphous TFT reduce a parasitic capacitance between the gate electrode and drain electrode.

摘要翻译： 非晶硅薄膜晶体管和具有非晶硅TFT的移位寄存器移位包括第一导电区域，第二导电区域和第三导电区域。 第一导电区域形成在与衬底间隔开第一距离的第一平面上。 第二导电区域形成在与衬底间隔开第二距离的第二平面上。 第二导电区域包括主体导电区域和从主体导电区域的两端延伸的两个手导电区域，以形成LI形状。 第三导电区域形成在第二平面上。 第三导电区域包括细长部分。 细长部分设置在第二导电区域的两个手导电区域之间。 非晶硅TFT和具有非晶硅TFT的移位寄存器减小栅电极和漏电极之间的寄生电容。