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    Pyrimidopyrimidine derivatives, organic thin film transistors using pyrimidopyrimidine derivatives and method for fabricating the same
    32.
    发明授权
    Pyrimidopyrimidine derivatives, organic thin film transistors using pyrimidopyrimidine derivatives and method for fabricating the same 有权
    嘧啶并嘧啶衍生物，使用嘧啶并嘧啶衍生物的有机薄膜晶体管及其制造方法

    公开(公告)号：US07632947B2

    公开(公告)日：2009-12-15

    申请号：US11358050

    申请日：2006-02-22

    Applicant: Eun Jeong Jeong ,  Sang Yoon Lee ,  Bang Lin Lee

    Inventor： Eun Jeong Jeong ,  Sang Yoon Lee ,  Bang Lin Lee

    IPC: H01L35/24 ,  H01L51/00 ,  C07D487/04 ,  C07F5/04

    CPC classification number: H01L51/0068 ,  H01L51/0067 ,  H01L51/0071 ,  H01L51/0545

    Abstract: Pyrimidopyrimidine derivatives, organic thin film transistors using pyrimidopyrimidine derivatives and method for fabricating the same are provided. Pyrimidopyrimidine derivative structures, along with example syntheses, are provided. The pyrimidopyrimidine derivatives may be pyrimidopyrimidine oligothiophene derivatives in which an oligothiophene having p-type semiconductor characteristics may be bonded to a pyrimidopyrimidine having n-type semiconductor characteristics positioned substantially in the center of the molecules, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. The pyrimidopyrimidine derivatives may be spin-coated at room, or ambient, temperature when applied to the fabrication of an electronic device, for example, organic thin film transistors. Organic thin film transistors using the pyrimidopyrimidine derivatives may provide higher charge carrier mobility and/or lower off-state leakage current.

    Abstract translation: 提供了嘧啶并嘧啶衍生物，使用嘧啶并嘧啶衍生物的有机薄膜晶体管及其制造方法。 提供嘧啶并嘧啶衍生物结构，以及实施例合成。 嘧啶并嘧啶衍生物可以是嘧啶并嘧啶低聚噻吩衍生物，其中具有p型半导体特性的低聚噻吩可以键合到具有基本上位于分子中心的n型半导体特性的嘧啶并嘧啶，从而同时显示p型和n型 半导体特性。 当应用于电子器件（例如有机薄膜晶体管）的制造时，嘧啶并嘧啶衍生物可以在室温或环境温度下旋涂。 使用嘧啶并嘧啶衍生物的有机薄膜晶体管可提供较高的载流子迁移率和/或较低截止状态的漏电流。

    ORGANIC SEMICONDUCTOR COPOLYMERS CONTAINING OLIGOTHIOPHENE AND n-TYPE HETEROAROMATIC UNITS
    34.
    发明申请
    ORGANIC SEMICONDUCTOR COPOLYMERS CONTAINING OLIGOTHIOPHENE AND n-TYPE HETEROAROMATIC UNITS 有权
    含有二乙二醇和n-型异构体单体的有机半导体共聚物

    公开(公告)号：US20080224130A1

    公开(公告)日：2008-09-18

    申请号：US12054134

    申请日：2008-03-24

    Applicant: Bang Lin LEE ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

    Inventor： Bang Lin LEE ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

    IPC: H01L51/30 ,  C08G75/00

    CPC classification number: H01L51/0043 ,  H01L51/0036 ,  H01L51/0512 ,  Y10T428/31533

    Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

    Abstract translation: 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接受单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受性杂芳族结构或包含C 2〜2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。

    Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same
    37.
    发明申请
    Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same 有权
    含氟基聚合物薄膜的有机薄膜晶体管及其制造方法

    公开(公告)号：US20070194305A1

    公开(公告)日：2007-08-23

    申请号：US11606287

    申请日：2006-11-30

    Applicant: Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

    Inventor： Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

    IPC: H01L29/08

    CPC classification number: H01L51/105 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0545

    Abstract: Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.

    Abstract translation: 公开了一种有机薄膜晶体管，其包括基板，栅极电极，栅极绝缘层，有机半导体层和源极/漏极，其中在源极/漏极之间设置氟基聚合物薄膜和 有机半导体层。 还提供了制造这种有机薄膜晶体管的方法。 根据示例性实施例，由于源极/漏极之间的接触电阻降低，有机薄膜晶体管可能具有增加的电荷迁移率和I / 有机半导体层。 此外，在形成有机半导体层和绝缘膜时，可以更容易地应用湿法，从而简化制造工艺并降低制造成本。

    Method of manufacturing electric device, array of electric devices, and manufacturing method therefor
    39.
    发明授权
    Method of manufacturing electric device, array of electric devices, and manufacturing method therefor 有权
    电气装置的制造方法，电气装置的阵列及其制造方法

    公开(公告)号：US08679984B2

    公开(公告)日：2014-03-25

    申请号：US13173986

    申请日：2011-06-30

    Applicant: Jong Won Chung ,  Christopher J. Bettinger ,  Zhenan Bao ,  Do Hwan Kim ,  Bang Lin Lee ,  Jeong Il Park ,  Yong Wan Jin ,  Sang Yoon Lee

    Inventor： Jong Won Chung ,  Christopher J. Bettinger ,  Zhenan Bao ,  Do Hwan Kim ,  Bang Lin Lee ,  Jeong Il Park ,  Yong Wan Jin ,  Sang Yoon Lee

    IPC: H01L21/461

    CPC classification number: H01L51/0558 ,  H01L51/0003 ,  H01L51/0026 ,  H01L51/0541 ,  H01L51/0545

    Abstract: An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns.

    Abstract translation: 示例性实施例涉及一种制造电气设备阵列的方法，其包括将包括微通道结构的平台附接到基板。 该方法包括将第一和第二溶液注入到微通道结构中以形成至少三个液膜柱，其中第一和第二溶液包括不同的溶剂组成比，并且液柱各自包括不同的溶剂组成比。 该方法还包括将基板分离，从液膜柱移除溶剂以形成薄膜柱，以及沿着薄膜柱的长度方向在不同条件下处理薄膜柱。 从薄膜柱中除去溶剂，并在薄膜柱的长度方向上在不同的条件下处理薄膜柱。

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