Asymmetric Write Scheme for Magnetic Bit Cell Elements
    32.
    发明申请
    Asymmetric Write Scheme for Magnetic Bit Cell Elements 有权
    磁位元件的非对称写入方案

    公开(公告)号:US20110249490A1

    公开(公告)日:2011-10-13

    申请号:US12755978

    申请日:2010-04-07

    IPC分类号: G11C11/14 G11C11/416

    摘要: Asymmetric switching is defined for magnetic bit cell elements. A magnetic bit cell for memory and other devices includes a transistor coupled to an MTJ structure. A bit line is coupled at one terminal of the bit cell to the MTJ structure. At another terminal of the bit cell, a source line is coupled to the source/drain terminal of the transistor. The bit line is driven by a bit line driver that provides a first voltage. The source line is driven by a source line driver that provides a second voltage. The second voltage is larger than the first voltage. The switching characteristics of the bit cell and MTJ structure are improved and made more reliable by one or a combination of applying the higher second voltage to the source line and/or reducing the overall parasitic resistance in the magnetic bit cell element.

    摘要翻译: 磁比特元件定义了非对称开关。 用于存储器和其它器件的磁位单元包括耦合到MTJ结构的晶体管。 位线在位单元的一个端子耦合到MTJ结构。 在位单元的另一个端子处,源极线耦合到晶体管的源极/漏极端子。 位线由提供第一电压的位线驱动器驱动。 源极线由提供第二电压的源极线驱动器驱动。 第二电压大于第一电压。 通过将较高的第二电压施加到源极线和/或降低磁头单元元件中的整体寄生电阻的一个或组合来提高位单元和MTJ结构的开关特性并使其变得更可靠。

    System and Method to Select a Reference Cell
    33.
    发明申请
    System and Method to Select a Reference Cell 失效
    选择参考单元的系统和方法

    公开(公告)号:US20110194333A1

    公开(公告)日:2011-08-11

    申请号:US12702486

    申请日:2010-02-09

    摘要: A system and method to select a reference cell is disclosed. In a particular embodiment, a method is disclosed that includes receiving an address corresponding to a bit cell within a first bank of a memory. The method also includes accessing a second reference cell of a second bank of the memory in response to a first reference cell in the first bank being indicated as bypassed.

    摘要翻译: 公开了一种选择参考单元的系统和方法。 在特定实施例中,公开了一种方法,其包括接收对应于存储器的第一组内的位单元的地址。 该方法还包括响应于第一组中的第一参考单元被指示为旁路而访问存储器的第二组的第二参考单元。

    Duty cycle corrector
    39.
    发明授权
    Duty cycle corrector 有权
    占空比校正器

    公开(公告)号:US07221204B2

    公开(公告)日:2007-05-22

    申请号:US11048185

    申请日:2005-02-01

    IPC分类号: H03K3/017

    CPC分类号: H03K5/1565

    摘要: A duty cycle corrector comprising a first circuit and a second circuit. The first circuit is configured to receive a clock signal and an inverted clock signal and to obtain a delay signal that indicates a time difference between transitions of the clock signal and the inverted clock signal. The second circuit is configured to receive the clock signal and the inverted clock signal and the delay signal and to delay the clock signal based on the delay signal to provide an output clock signal having substantially a 50% duty cycle.

    摘要翻译: 一种占空比校正器,包括第一电路和第二电路。 第一电路被配置为接收时钟信号和反相时钟信号,并且获得指示时钟信号和反相时钟信号的转变之间的时间差的延迟信号。 第二电路被配置为接收时钟信号和反相时钟信号和延迟信号,并且基于延迟信号延迟时钟信号以提供具有基本上50%占空比的输出时钟信号。

    Oscillator with temperature control
    40.
    发明授权
    Oscillator with temperature control 有权
    振荡器带温度控制

    公开(公告)号:US07123105B2

    公开(公告)日:2006-10-17

    申请号:US10739398

    申请日:2003-12-19

    IPC分类号: H03K3/02

    CPC分类号: H03L1/022 H03L1/028

    摘要: An oscillator circuit includes a capacitor device, a current source for supplying a current to the capacitor device, a reference voltage, and a control circuit. The reference voltage is a first input to a comparator. An output of the capacitor device and an output of the current source are a second input to the comparator. The control circuit resets the oscillator circuit when the first and second inputs to the comparator are equal.

    摘要翻译: 振荡器电路包括电容器装置,用于向电容器装置提供电流的电流源,参考电压和控制电路。 参考电压是比较器的第一个输入。 电容器装置的输出和电流源的输出是比较器的第二输入。 当比较器的第一和第二输入相等时,控制电路复位振荡器电路。