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    Apparatus for efficient removal of halogen residues from etched substrates
    33.
    发明授权
    Apparatus for efficient removal of halogen residues from etched substrates 有权
    用于从蚀刻的基板有效去除卤素残留物的装置

    公开(公告)号：US08486194B2

    公开(公告)日：2013-07-16

    申请号：US13652814

    申请日：2012-10-16

    Applicant: Kenneth J. Bhang ,  Matthew Fenton Davis ,  Travis Morey ,  James D. Carducci

    Inventor： Kenneth J. Bhang ,  Matthew Fenton Davis ,  Travis Morey ,  James D. Carducci

    IPC: C23C16/00

    CPC classification number: H01L21/02071 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67201 ,  H01L21/68728 ,  H01L21/68785 ,  Y10T428/24008 ,  Y10T428/24628

    Abstract: An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window.

    Abstract translation: 提供了用于从基板除去挥发性残留物的装置。 在一个实施例中，用于从基板去除含卤素残余物的装置包括适于在其中维持真空的操作的腔室和定位成加热设置在腔室中的衬底的热模块。 用于从基板除去含卤素残留物的设备还包括以下中的至少一个：A）温度控制基座，其具有径向延伸的突出物，其适于将温度控制基座支撑在腔体的凸缘上，所述突起热隔离基座 从室内; B）一对基板保持器，其包括从弧形体的内边缘径向向内延伸的两个支撑凸缘，每个支撑凸缘具有包括倾斜着陆部的基板支撑台阶; 或C）圆顶窗。

    APPARATUS FOR EFFICIENT REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES
    36.
    发明申请
    APPARATUS FOR EFFICIENT REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES 有权
    有效去除蚀刻基板上的卤素残留的装置

    公开(公告)号：US20130040080A1

    公开(公告)日：2013-02-14

    申请号：US13652814

    申请日：2012-10-16

    Applicant: Kenneth J. Bhang ,  Matthew F. Davis ,  Travis Morey ,  James D. Carducci

    Inventor： Kenneth J. Bhang ,  Matthew F. Davis ,  Travis Morey ,  James D. Carducci

    IPC: B32B3/06

    CPC classification number: H01L21/02071 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67201 ,  H01L21/68728 ,  H01L21/68785 ,  Y10T428/24008 ,  Y10T428/24628

    Abstract: An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window.

    Abstract translation: 提供了用于从基板除去挥发性残留物的装置。 在一个实施例中，用于从基板去除含卤素残余物的装置包括适于在其中维持真空的操作的腔室和定位成加热设置在腔室中的衬底的热模块。 用于从基板除去含卤素残留物的设备还包括以下中的至少一个：A）温度控制基座，其具有径向延伸的突出物，其适于将温度控制基座支撑在腔体的凸缘上，所述突起热隔离基座 从室内; B）一对基板保持器，其包括从弧形体的内边缘径向向内延伸的两个支撑凸缘，每个支撑凸缘具有包括倾斜着陆部的基板支撑台阶; 或C）圆顶窗。

    Etching chamber having flow equalizer and lower liner
    37.
    发明授权
    Etching chamber having flow equalizer and lower liner 有权
    蚀刻室具有流量均衡器和下层衬套

    公开(公告)号：US08313578B2

    公开(公告)日：2012-11-20

    申请号：US12624155

    申请日：2009-11-23

    Applicant: James D. Carducci ,  Kin Pong Lo ,  Kallol Bera ,  Michael C. Kutney ,  Matthew L. Miller

    Inventor： James D. Carducci ,  Kin Pong Lo ,  Kallol Bera ,  Michael C. Kutney ,  Matthew L. Miller

    IPC: C23C16/52 ,  C23C16/455

    CPC classification number: H01J37/32623 ,  H01J37/32467

    Abstract: A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.

    Abstract translation: 具有降低的流量均衡器和下腔室衬套的等离子体处理室。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 通过均衡从室抽出的处理气体的流动，可能发生更均匀的蚀刻。 通过将流量均衡器电耦合到室衬套，来自流量均衡器的RF返回路径可以沿着室衬套运行，并且因此减少在处理期间在衬底下方拉制的等离子体的量。

    Apparatus for efficient removal of halogen residues from etched substrates
    38.
    发明授权
    Apparatus for efficient removal of halogen residues from etched substrates 有权
    用于从蚀刻的基板有效去除卤素残留物的装置

    公开(公告)号：US08293016B2

    公开(公告)日：2012-10-23

    申请号：US12572786

    申请日：2009-10-02

    Applicant: Kenneth J. Bahng ,  Matthew F. Davis ,  Travis Morey ,  James D. Carducci

    Inventor： Kenneth J. Bahng ,  Matthew F. Davis ,  Travis Morey ,  James D. Carducci

    IPC: C23C16/00

    CPC classification number: H01L21/02071 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67201 ,  H01L21/68728 ,  H01L21/68785 ,  Y10T428/24008 ,  Y10T428/24628

    Abstract: An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window.

    Abstract translation: 提供了用于从基板除去挥发性残留物的装置。 在一个实施例中，用于从基板去除含卤素残余物的装置包括适于在其中维持真空的操作的腔室和定位成加热设置在腔室中的衬底的热模块。 用于从基板除去含卤素残留物的设备还包括以下中的至少一个：A）温度控制基座，其具有径向延伸的突起，适合于将温度控制基座支撑在腔体的凸缘上， 从室内; B）一对基板保持器，其包括从弧形体的内边缘径向向内延伸的两个支撑凸缘，每个支撑凸缘具有包括倾斜着陆部的基板支撑台阶; 或C）圆顶窗。

    METHODS AND APPARATUS FOR IMPROVING FLOW UNIFORMITY IN A PROCESS CHAMBER
    39.
    发明申请
    METHODS AND APPARATUS FOR IMPROVING FLOW UNIFORMITY IN A PROCESS CHAMBER 审中-公开
    改进流程室流量均匀性的方法和装置

    公开(公告)号：US20100081284A1

    公开(公告)日：2010-04-01

    申请号：US12240090

    申请日：2008-09-29

    Applicant: AJIT BALAKRISHNA ,  Aniruddha Pal ,  James D. Carducci ,  Semyon L. Kats ,  Shahid Rauf

    Inventor： AJIT BALAKRISHNA ,  Aniruddha Pal ,  James D. Carducci ,  Semyon L. Kats ,  Shahid Rauf

    IPC: H01L21/3065 ,  C23F1/08 ,  C23C16/00

    CPC classification number: H01J37/32449 ,  C23C16/45591 ,  C23C16/4585 ,  H01J37/321 ,  H01J37/3244

    Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a flow equalizer configured to control the flow of gases between a process volume and an exhaust port of a process chamber. The flow equalizer includes at least one restrictor plate configured to be disposed in a plane proximate a surface of a substrate to be processed and defines an azimuthally non-uniform gap between an edge of the at least one restrictor plate and one of either a chamber wall or a substrate support when installed in the process chamber.

    Abstract translation: 本文提供了处理衬底的方法和装置。 在一些实施例中，用于处理衬底的装置包括流量均衡器，其被配置为控制处理室的处理容积和排气口之间的气体流。 流量均衡器包括至少一个限制器板，其被配置为设置在接近要处理的基板的表面的平面中，并且限定了至少一个限制器板的边缘与腔室壁中的一个之间的方位不均匀的间隙 或安装在处理室中时的基板支撑件。

    ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER
    40.
    发明申请
    ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER 有权
    具有流量均衡器和下层的蚀刻室

    公开(公告)号：US20100065213A1

    公开(公告)日：2010-03-18

    申请号：US12624155

    申请日：2009-11-23

    Applicant: James D. Carducci ,  Kin Pong Lo ,  Kallol Bera ,  Michael C. Kutney ,  Matthew L. Miller

    Inventor： James D. Carducci ,  Kin Pong Lo ,  Kallol Bera ,  Michael C. Kutney ,  Matthew L. Miller

    IPC: H01L21/306

    CPC classification number: H01J37/32623 ,  H01J37/32467

    Abstract: A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.

    Abstract translation: 具有降低的流量均衡器和下腔室衬套的等离子体处理室。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 通过均衡从室抽出的处理气体的流动，可能发生更均匀的蚀刻。 通过将流量均衡器电耦合到室衬套，来自流量均衡器的RF返回路径可以沿着室衬套运行，并且因此减少在处理期间在衬底下方拉制的等离子体的量。

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