Stacked organic photosensitive devices
    32.
    发明授权
    Stacked organic photosensitive devices 有权
    堆叠有机光敏元件

    公开(公告)号:US07816715B2

    公开(公告)日:2010-10-19

    申请号:US11728706

    申请日:2007-03-26

    Abstract: A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength λ1 and a second photoactive region having a characteristic absorption wavelength λ2. The photoactive regions are disposed between the first and second electrodes, and further positioned on the same side of a reflective layer, such that the first photoactive region is closer to the reflective layer than the second photoactive region. The materials comprising the photoactive regions may be selected such that λ1 is at least about 10% different from λ2. The device may further comprise an exciton blocking layer disposed adjacent to and in direct contact with the organic acceptor material of each photoactive region, wherein the LUMO of each exciton blocking layer other than that closest to the cathode is not more than about 0.3 eV greater than the LUMO of the acceptor material.

    Abstract translation: 提供了具有第一电极,第二电极,具有特征吸收波长λ1的第一光活性区域和具有特征吸收波长λ2的第二光活性区域的装置。 光活性区域设置在第一和第二电极之间,并且进一步定位在反射层的相同侧上,使得第一光活性区域比第二光活性区域更靠近反射层。 可以选择包含光活性区域的材料,使得λ1与λ2至少约10%不同。 该装置还可以包括邻近并与每个光活性区域的有机受体材料直接接触的激子阻挡层,其中除最接近阴极之外的每个激子阻挡层的LUMO不大于约0.3eV,大于约0.3eV 受体材料的LUMO。

    Stacked Organic Photosensitive Devices
    33.
    发明申请
    Stacked Organic Photosensitive Devices 有权
    堆叠有机光敏器件

    公开(公告)号:US20080224132A1

    公开(公告)日:2008-09-18

    申请号:US12123095

    申请日:2008-05-19

    Abstract: A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength λ1 and a second photoactive region having a characteristic absorption wavelength λ2. The photoactive regions are disposed between the first and second electrodes, and further positioned on the same side of a reflective layer, such that the first photoactive region is closer to the reflective layer than the second photoactive region. The materials comprising the photoactive regions may be selected such that λ1 is at least about 10% different from λ2. The device may further comprise an exciton blocking layer disposed adjacent to and in direct contact with the organic acceptor material of each photoactive region, wherein the LUMO of each exciton blocking layer other than that closest to the cathode is not more than about 0.3 eV greater than the LUMO of the acceptor material.

    Abstract translation: 提供一种器件,其具有第一电极,第二电极,具有特征吸收波长λ1的第一光活性区域和具有特征吸收波长λ2的第二光活性区域, 。 光活性区域设置在第一和第二电极之间,并且进一步定位在反射层的相同侧上,使得第一光活性区域比第二光活性区域更靠近反射层。 可以选择包含光活性区的材料,使得λ1至少与λ2不同10%。 该装置还可以包括邻近并与每个光活性区域的有机受体材料直接接触的激子阻挡层,其中除最接近阴极之外的每个激子阻挡层的LUMO不大于约0.3eV,大于约0.3eV 受体材料的LUMO。

    Low resistance thin film organic solar cell electrodes
    35.
    发明申请
    Low resistance thin film organic solar cell electrodes 有权
    低电阻薄膜有机太阳能电池电极

    公开(公告)号:US20070178619A1

    公开(公告)日:2007-08-02

    申请号:US11205122

    申请日:2005-08-17

    Abstract: A method which lower the series resistance of photosensitive devices includes providing a transparent film of a first electrically conductive material arranged on a transparent substrate; depositing and patterning a mask over the first electrically conductive material, such that openings in the mask have sloping sides which narrow approaching the substrate; depositing a second electrically conductive material directly onto the first electrically conductive material exposed in the openings of the mask, at least partially filling the openings; stripping the mask, leaving behind reentrant structures of the second electrically conductive material which were formed by the deposits in the openings of the mask; after stripping the mask, depositing a first organic material onto the first electrically conductive material in between the reentrant structures; and directionally depositing a third electrically conductive material over the first organic material deposited in between the reentrant structures, edges of the reentrant structures aligning deposition so that the third electrically conductive material does not directly contact the first electrically conductive material, and does not directly contact the second electrically conductive material.

    Abstract translation: 降低光敏元件的串联电阻的方法包括提供布置在透明基板上的第一导电材料的透明膜; 在所述第一导电材料上沉积和图案化掩模,使得所述掩模中的开口具有接近所述基底的窄边; 将第二导电材料直接沉积在暴露于掩模的开口中的至少部分填充开口的第一导电材料上; 剥离掩模,留下由掩模的开口中的沉积物形成的第二导电材料的可重入结构; 在剥离掩模之后,将第一有机材料沉积在第一导电材料之间的可重入结构之间; 并且在第一有机材料上定向沉积第三导电材料,所述第一有机材料沉积在所述凹坑结构之间,所述凹槽结构的边缘对准沉积物,使得所述第三导电材料不直接接触所述第一导电材料,并且不直接接触所述第一导电材料 第二导电材料。

    Encapsulating electrode
    36.
    发明申请
    Encapsulating electrode 有权
    封装电极

    公开(公告)号:US20070048892A1

    公开(公告)日:2007-03-01

    申请号:US11211656

    申请日:2005-08-26

    Abstract: An organic photosensitive optoelectronic device is formed in which the organic photoconductive materials are encapsulated by an electrode of the device. A first transparent film is provided that comprises a first electrically conductive material, arranged on a transparent substrate. A first photoconductive organic material is deposited over the first electrically conductive material. A metal is deposited at an initial rate of no more than 1 nm/s over the first photoconductive organic material, completely covering any exposed portions of the first photoconductive organic material and any exposed interfaces with the first photoconductive organic material to a thickness of no less than 10 nm. After the thickness of no less than 10 nm is obtained, the metal is sputtered at an increased rate at least three times the initial rate until a cumulative thickness of the metal completely covering the previously exposed portions of the first photoconductive organic material and the previously exposed interfaces with the first conductive organic material is at least 250 nm.

    Abstract translation: 形成有机光敏光电器件,其中有机光电导材料被器件的电极封装。 提供了第一透明膜,其包括设置在透明基板上的第一导电材料。 第一光导有机材料沉积在第一导电材料上。 在第一光导有机材料上以不超过1nm / s的初始速率沉积金属,完全覆盖第一光电导有机材料的任何暴露部分和与第一光电导有机材料的任何暴露界面,其厚度不小于 超过10nm。 在获得不小于10nm的厚度之后,以增加的速率溅射金属至少是初始速率的三倍,直到金属的累积厚度完全覆盖第一光导有机材料的先前暴露部分和先前暴露的 与第一导电有机材料的界面为至少250nm。

Patent Agency Ranking