DSM-PSK OPTICAL WIRELESS TRANSMISSION METHOD AND DEVICE

    公开(公告)号:US20190326997A1

    公开(公告)日:2019-10-24

    申请号:US16069844

    申请日:2016-11-28

    Abstract: A DSM-PSK optical wireless transmission method includes the steps of: receiving a binary data signal, allowing a modulator to convert the binary data signal into a global phase shift signal, generating a reference signal group including M number of pulse signals having the same period, the same duty ratio of d/M, mutually different phases, and a determined sequence, generating a data signal group including M number of pulse signals having a determined sequence, the pulse signals having been obtained by phase-shifting the reference signal group according to the global phase shift signal, flickering each light source of a reference light source group including M number of light sources having a determined sequence, according to each pulse signal of the reference signal group, and flickering each light source of a data light source group including M number of light sources having a determined sequence, according to each pulse signal of the data signal group.

    METHOD OF FORMING THROUGH-HOLE IN SILICON SUBSTRATE, METHOD OF FORMING ELECTRICAL CONNECTION ELEMENT PENETRATING SILICON SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY
    40.
    发明申请
    METHOD OF FORMING THROUGH-HOLE IN SILICON SUBSTRATE, METHOD OF FORMING ELECTRICAL CONNECTION ELEMENT PENETRATING SILICON SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY 有权
    在硅衬底中形成贯通孔的方法,形成电连接元件的硅基底板和制造的半导体器件的方法

    公开(公告)号:US20160148858A1

    公开(公告)日:2016-05-26

    申请号:US14952987

    申请日:2015-11-26

    Abstract: The present invention herein relates to a method of forming a through-hole in a silicon substrate. The present invention herein also relates to a method of forming an electrical connection element which penetrates through the silicon substrate, and to a semiconductor device manufactured thereby. More particularly, the present invention herein relates to a method of forming in a silicon substrate a through-hole capable of reducing roughness in a side wall of the through-hole and exhibiting low permittivity, by alternatingly laminating cationic and anionic polymer on the through-hole that has a dent on the side wall to form a porous elastic layer, and also relates to a method of forming an electrical connection that penetrates through the silicon substrate, and to a semiconductor device manufactured thereby.

    Abstract translation: 本发明涉及一种在硅衬底中形成通孔的方法。 本发明还涉及一种形成穿过硅衬底的电连接元件的方法,以及由此制造的半导体器件。 更具体地说,本发明涉及一种在硅基板上形成通孔的方法,所述通孔能够通过在通孔上交替层叠阳离子和阴离子聚合物,从而能够减小通孔侧壁的粗糙度并显示低介电常数, 在侧壁上具有凹陷以形成多孔弹性层的孔,并且还涉及形成穿过硅衬底的电连接的方法以及由其制造的半导体器件。

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