Abstract:
A switching system is provided. The switching system includes electromechanical switching circuitry, such as a micro-electromechanical system switching circuitry. The system may further include solid state switching circuitry coupled in a parallel circuit with the electromechanical switching circuitry, and a controller coupled to the electromechanical switching circuitry and the solid state switching circuitry. The controller may be configured to perform selective switching of a load current between the electromechanical switching circuitry and the solid state switching circuitry in response to a load current condition appropriate to an operational capability of a respective one of the switching circuitries.
Abstract:
MEMS-based switching module, as may be electrically connected to other such modules in a series circuit, to achieve a desired voltage rating is provided. A switching array may be made up of a plurality of such switching modules (e.g., used as building blocks of the switching array) with circuitry configured so that any number of modules can be connected in series to achieve the desired voltage rating (e.g., voltage scalability).
Abstract:
A method for forming smooth walled, prismatically-profiled through-wafer vias and articles formed through the method. An etch stop material is provided on a wafer, which may be a silicon wafer. A mask material is provided on the etch stop material and patterned in such a way as to lead to the formation of vias that have at least one pair of opposing side walls that run parallel to a plane in the wafer. A wet etchant, such as potassium hydroxide, is used to etch vias in the wafer. The use of a wet etchant leads to the formation of smooth side walls. This method allows an aspect ratio of height versus width of the vias of greater than 75 to 1.
Abstract:
A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.
Abstract:
An electrical through-connection, or via, that passes through a substrate to a bus on a first surface of the substrate. The via may be configured with an interlock such that the electrically conductive core of the via is constrained to thermally expand towards the second surface, away from the bus, thus preventing damage to the bus. The interlock may be a local constriction or enlargement of the via near the first surface of the substrate. The via may be greater in length along the bus than a unit spacing of beams in a parallel microswitch array actuated in unison along the bus. The via may be narrower in width than in length, and may form a trapezoidal geometry that is larger at the second surface of the substrate than at the first surface.
Abstract:
A device, such as a switch structure, is provided, the device including a contact and a conductive element. The conductive element can be configured to be selectively moveable between a non-contacting position, in which the conductive element is separated from the contact (in some cases by a distance less than or equal to about 4 μm, and in others by less than or equal to about 1 μm), and a contacting position, in which the conductive element contacts and establishes electrical communication with the contact. When the conductive element is disposed in the non-contacting position, the contact and the conductive element can be configured to support an electric field therebetween with a magnitude of greater than 320 V μm−1 and/or a potential difference of about 330 V or more.
Abstract:
An optically powered MEMS gate driver includes a photovoltaic converter configured to receive a light signal from a light source and output a DC supply voltage for a MEMS gate driver in response thereto. The MEMS gate driver further includes a DC to DC converter electrically coupled to the photovoltaic converter and configured to output a line level DC voltage in response to the DC supply voltage. An electrical circuit, also included as a portion of the MEMS gate driver is electrically coupled to both the photovoltaic converter and the DC to DC converter is configured to receive the supply voltage and the line level voltage and to output a line level drive signal in response thereto. The optically powered MEMS gate driver is self-contained within a common EMI enclosure thus providing isolation between the gate driver and command signal electronics.
Abstract:
A micro-electromechanical system (MEMS) switch array for power switching includes an input node, an output node, and a plurality of MEMS switches, wherein the input node and the output node are independently in electrical communication with a portion of the plurality of MEMS switches, and wherein a failure of any one of the plurality of MEMS switches does not render ineffective another MEMS switch within the MEMS switch array.
Abstract:
A switching system is provided. The switching system includes electromechanical switching circuitry, such as a micro-electromechanical system switching circuitry. The system may further include solid state switching circuitry coupled in a parallel circuit with the electromechanical switching circuitry, and a controller coupled to the electromechanical switching circuitry and the solid state switching circuitry. The controller may be configured to perform selective switching of a load current between the electromechanical switching circuitry and the solid state switching circuitry in response to a load current condition appropriate to an operational capability of a respective one of the switching circuitries.
Abstract:
A MEMS switch includes a substrate, a movable actuator coupled to the substrate, a substrate contact, a substrate electrode, and a conductive stopper electrically coupled to the movable actuator and structured to prevent the movable actuator from contacting the substrate electrode while allowing the movable actuator to make contact with the substrate contact.