Small scale wires with microelectromechanical devices
    34.
    发明授权
    Small scale wires with microelectromechanical devices 有权
    小型电线与微机电装置

    公开(公告)号:US07022617B2

    公开(公告)日:2006-04-04

    申请号:US10606812

    申请日:2003-06-26

    Abstract: A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.

    Abstract translation: 蚀刻和钝化化学物质之间的过程循环,以产生转变成小结构的粗糙侧壁。 在一个实施例中,使用掩模来限定单晶硅晶片中的线。 该过程在对应于循环的线的侧壁上产生波纹。 在一个实施例中,线被氧化以形成对应于每个纹波的硅线。 在另一个实施方案中去除氧化物以形成从微尖端到光线阵列的结构。 通过氧化相邻的波纹侧壁形成流体通道。 同样的掩模也用于形成MEMS器件的其他结构。

    SWITCH STRUCTURES
    36.
    发明申请
    SWITCH STRUCTURES 有权
    开关结构

    公开(公告)号:US20110036690A1

    公开(公告)日:2011-02-17

    申请号:US12541321

    申请日:2009-08-14

    CPC classification number: H01H59/0009 H01H2001/0084

    Abstract: A device, such as a switch structure, is provided, the device including a contact and a conductive element. The conductive element can be configured to be selectively moveable between a non-contacting position, in which the conductive element is separated from the contact (in some cases by a distance less than or equal to about 4 μm, and in others by less than or equal to about 1 μm), and a contacting position, in which the conductive element contacts and establishes electrical communication with the contact. When the conductive element is disposed in the non-contacting position, the contact and the conductive element can be configured to support an electric field therebetween with a magnitude of greater than 320 V μm−1 and/or a potential difference of about 330 V or more.

    Abstract translation: 提供诸如开关结构的装置,该装置包括接触件和导电元件。 导电元件可以被配置为在非接触位置之间选择性地移动,在非接触位置中,导电元件与接触件分离(在一些情况下,距离小于或等于约4μm,而另一些距离小于或等于约4μm, 等于约1μm),以及接触位置,其中导电元件接触并建立与接触件的电连通。 当导电元件设置在非接触位置时,触点和导电元件可被配置为支撑其间具有大于320Vμm-1的大小和/或约330V的电位差的电场,或 更多。

    OPTICALLY GATED MEMS SWITCH
    37.
    发明申请
    OPTICALLY GATED MEMS SWITCH 有权
    光电式MEMS开关

    公开(公告)号:US20100237227A1

    公开(公告)日:2010-09-23

    申请号:US12408937

    申请日:2009-03-23

    CPC classification number: H03K17/941 H01H59/0009

    Abstract: An optically powered MEMS gate driver includes a photovoltaic converter configured to receive a light signal from a light source and output a DC supply voltage for a MEMS gate driver in response thereto. The MEMS gate driver further includes a DC to DC converter electrically coupled to the photovoltaic converter and configured to output a line level DC voltage in response to the DC supply voltage. An electrical circuit, also included as a portion of the MEMS gate driver is electrically coupled to both the photovoltaic converter and the DC to DC converter is configured to receive the supply voltage and the line level voltage and to output a line level drive signal in response thereto. The optically powered MEMS gate driver is self-contained within a common EMI enclosure thus providing isolation between the gate driver and command signal electronics.

    Abstract translation: 光学驱动的MEMS栅极驱动器包括光电转换器,其被配置为从光源接收光信号,并响应于此向MEMS栅极驱动器输出DC电源电压。 MEMS栅极驱动器还包括电耦合到光伏转换器并被配置为响应于DC电源电压输出线路电平DC电压的DC-DC转换器。 还包括作为MEMS栅极驱动器的一部分的电路电耦合到光伏转换器和DC-DC转换器两者被配置为接收电源电压和线路电平电压并且响应地输出线路电平的驱动信号 到此。 光学驱动的MEMS栅极驱动器是独立于普通的EMI外壳内,从而提供栅极驱动器和命令信号电子器件之间的隔离。

Patent Agency Ranking