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公开(公告)号：US07022617B2
公开(公告)日：2006-04-04
申请号：US10606812
申请日：2003-06-26
Applicant: Kanakasabapathi Subramanian , Noel C. MacDonald
Inventor： Kanakasabapathi Subramanian , Noel C. MacDonald
IPC: H01L21/461
CPC classification number: B81C1/00142 , B81B2203/0361 , B81C1/00071 , B81C1/00111 , B81C2201/0112 , Y10S977/70 , Y10S977/762
Abstract: A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.
Abstract translation: 蚀刻和钝化化学物质之间的过程循环，以产生转变成小结构的粗糙侧壁。 在一个实施例中，使用掩模来限定单晶硅晶片中的线。 该过程在对应于循环的线的侧壁上产生波纹。 在一个实施例中，线被氧化以形成对应于每个纹波的硅线。 在另一个实施方案中去除氧化物以形成从微尖端到光线阵列的结构。 通过氧化相邻的波纹侧壁形成流体通道。 同样的掩模也用于形成MEMS器件的其他结构。
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公开(公告)号：US07504757B2
公开(公告)日：2009-03-17
申请号：US11375860
申请日：2006-03-15
Applicant: Kanakasabapathi Subramanian , Xiaojun T. Huang , Noel C. MacDonald
Inventor： Kanakasabapathi Subramanian , Xiaojun T. Huang , Noel C. MacDonald
CPC classification number: B81C1/00626 , B81B2201/033 , H01L21/3086
Abstract: Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.
Abstract translation: 通过首先形成不同宽度的线或结构的图案，在半导体衬底中形成多层结构。 图案上的宽度信息通过处理步骤被解码成级信息以形成MEMS结构。 蚀刻图案以形成具有一层的结构。 结构被氧化，直到较薄宽度的结构基本上被完全氧化。 然后蚀刻一部分氧化物以露出第一层。 然后蚀刻第一层以形成二楼。 然后任选地除去氧化物，留下多层结构。 在一个实施例中，使用多层结构工艺形成高纵横比梳状致动器。
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公开(公告)号：US07339244B2
公开(公告)日：2008-03-04
申请号：US11340135
申请日：2006-01-26
Applicant: Kanakasabapathi Subramanian , Noel C. MacDonald
Inventor： Kanakasabapathi Subramanian , Noel C. MacDonald
CPC classification number: B81C1/00142 , B81B2203/0361 , B81C1/00071 , B81C1/00111 , B81C2201/0112 , Y10S977/70 , Y10S977/762
Abstract: A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.
Abstract translation: 蚀刻和钝化化学物质之间的过程循环，以产生转变成小结构的粗糙侧壁。 在一个实施例中，使用掩模来限定单晶硅晶片中的线。 该过程在对应于循环的线的侧壁上产生波纹。 在一个实施例中，线被氧化以形成对应于每个纹波的硅线。 在另一个实施方案中去除氧化物以形成从微尖端到光线阵列的结构。 通过氧化相邻的波纹侧壁形成流体通道。 同样的掩模也用于形成用于MEMS器件的其它结构。
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公开(公告)号：US07045466B2
公开(公告)日：2006-05-16
申请号：US10607838
申请日：2003-06-27
Applicant: Kanakasabapathi Subramanian , Xiaojun T. Huang , Noel C. MacDonald
Inventor： Kanakasabapathi Subramanian , Xiaojun T. Huang , Noel C. MacDonald
IPC: H01L21/302
CPC classification number: B81C1/00626 , B81B2201/033 , H01L21/3086
Abstract: Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.
Abstract translation: 通过首先形成不同宽度的线或结构的图案，在半导体衬底中形成多层结构。 图案上的宽度信息通过处理步骤被解码成级信息以形成MEMS结构。 蚀刻图案以形成具有一层的结构。 结构被氧化，直到较薄宽度的结构基本上被完全氧化。 然后蚀刻一部分氧化物以露出第一层。 然后蚀刻第一层以形成二楼。 然后任选地除去氧化物，留下多层结构。 在一个实施例中，使用多层结构工艺形成高纵横比梳状致动器。
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5.发明授权Electrical distribution system including micro electro-mechanical switch (MEMS) devices 有权配电系统包括微机电开关（MEMS）装置公开(公告)号：US08570713B2
公开(公告)日：2013-10-29
申请号：US13172214
申请日：2011-06-29
Applicant: Brent Charles Kumfer , Peter James Greenwood , Brian Frederick Mooney , Thomas Frederick Papallo, Jr. , Kanakasabapathi Subramanian
Inventor： Brent Charles Kumfer , Peter James Greenwood , Brian Frederick Mooney , Thomas Frederick Papallo, Jr. , Kanakasabapathi Subramanian
CPC classification number: H01H9/542 , H01H1/0036 , H01H83/22 , H01H2009/543 , H01H2071/008 , H01H2083/201
Abstract: An electrical distribution system includes at least one circuit breaker device having an electrical interruption system provided with an electrical pathway, at least one micro electro-mechanical switch (MEMS) device electrically coupled in the electrical pathway, at least one hybrid arcless limiting technology (HALT) connection, and at least one control connection. A HALT circuit member is electrically coupled to HALT connection on the circuit breaker device and a controller is electrically coupled to the control connection on the circuit breaker device. The controller is configured and disposed to selectively connect the HALT circuit member and the at least one circuit breaker device via the HALT connection to control electrical current flow through the at least one circuit breaker device.
Abstract translation: 配电系统包括至少一个断路器装置，其具有设置有电路径的电中断系统，至少一个在电路中电耦合的微机电开关（MEMS）装置，至少一个混合无弧限制技术（HALT ）连接，以及至少一个控制连接。 HALT电路构件电连接到断路器装置上的HALT连接，并且控制器电耦合到断路器装置上的控制连接。 控制器被配置和布置成经由HALT连接选择性地连接HALT电路构件和至少一个断路器装置，以控制通过至少一个断路器装置的电流。
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Patent Agency Ranking
公开(公告)号：US08144445B2
公开(公告)日：2012-03-27
申请号：US11761617
申请日：2007-06-12
Applicant: Robert Joseph Caggiano , William James Premerlani , Marcelo Esteban Valdes , Kanakasabapathi Subramanian , Brent Charles Kumfer , Charles Stephan Pitzen , John Norton Park
Inventor： Robert Joseph Caggiano , William James Premerlani , Marcelo Esteban Valdes , Kanakasabapathi Subramanian , Brent Charles Kumfer , Charles Stephan Pitzen , John Norton Park
CPC classification number: H01H71/123 , H01H9/40 , H01H9/541 , H01H59/0009 , H01H2071/008 , H01H2071/088 , H01H2071/124
Abstract: A current control device is disclosed. The current control device includes control circuitry and a current path integrally arranged with the control circuitry. The current path includes a set of conduction interfaces and a micro electromechanical system (MEMS) switch disposed between the set of conduction interfaces. The set of conduction interfaces have geometry of a defined fuse terminal geometry and include a first interface disposed at one end of the current path and a second interface disposed at an opposite end of the current path. The MEMS switch is responsive to the control circuitry to facilitate the interruption of an electrical current passing through the current path.
Abstract translation: 公开了一种电流控制装置。 电流控制装置包括与控制电路整体配置的控制电路和电流路径。 电流路径包括一组导电接口和设置在该组导电接口之间的微机电系统（MEMS）开关。 导电接口的集合具有限定的熔丝端子几何形状的几何形状，并且包括设置在电流路径的一端的第一接口和设置在电流路径的相对端的第二接口。 MEMS开关响应于控制电路以便于中断通过电流路径的电流。
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公开(公告)号：US08101898B2
公开(公告)日：2012-01-24
申请号：US12408937
申请日：2009-03-23
Applicant: Glen Peter Koste , Kathleen Ann O'Brien , Kanakasabapathi Subramanian , John Norton Park
CPC classification number: H03K17/941 , H01H59/0009
Abstract: An optically powered MEMS gate driver includes a photovoltaic converter configured to receive a light signal from a light source and output a DC supply voltage for a MEMS gate driver in response thereto. The MEMS gate driver further includes a DC to DC converter electrically coupled to the photovoltaic converter and configured to output a line level DC voltage in response to the DC supply voltage. An electrical circuit, also included as a portion of the MEMS gate driver is electrically coupled to both the photovoltaic converter and the DC to DC converter is configured to receive the supply voltage and the line level voltage and to output a line level drive signal in response thereto. The optically powered MEMS gate driver is self-contained within a common EMI enclosure thus providing isolation between the gate driver and command signal electronics.
Abstract translation: 光学驱动的MEMS栅极驱动器包括光电转换器，其被配置为从光源接收光信号，并响应于此向MEMS栅极驱动器输出DC电源电压。 MEMS栅极驱动器还包括电耦合到光伏转换器并被配置为响应于DC电源电压输出线路电平DC电压的DC-DC转换器。 还包括作为MEMS栅极驱动器的一部分的电路电耦合到光伏转换器和DC-DC转换器两者被配置为接收电源电压和线路电平电压并且响应地输出线路电平的驱动信号 到此。 光学驱动的MEMS栅极驱动器是独立于普通的EMI外壳内，从而提供栅极驱动器和命令信号电子器件之间的隔离。
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公开(公告)号：US08093971B2
公开(公告)日：2012-01-10
申请号：US12340775
申请日：2008-12-22
Applicant: Xuefeng Wang , Alex David Corwin , Bo Li , Kanakasabapathi Subramanian , Kuna Venkat Satya Rama Kishore
Inventor： Xuefeng Wang , Alex David Corwin , Bo Li , Kanakasabapathi Subramanian , Kuna Venkat Satya Rama Kishore
IPC: H01H51/22
CPC classification number: H01H59/0009 , H01H1/0036 , H01H2001/0078 , H01H2001/0084 , Y10T29/49105
Abstract: A micro electromechanical system switch having an electrical pathway is presented. The switch includes a first portion and a second portion. The second portion is offset to a zero overlap position with respect to the first portion when the switch is in open position (or in the closed position depending on the switch architecture). The switch further includes an actuator for moving the first portion and the second portion into contact.
Abstract translation: 提出了具有电路径的微机电系统开关。 开关包括第一部分和第二部分。 当开关处于打开位置时（或根据开关结构处于闭合位置），第二部分相对于第一部分偏移到零重叠位置。 开关还包括用于使第一部分和第二部分移动接触的致动器。
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公开(公告)号：US20110316608A1
公开(公告)日：2011-12-29
申请号：US12825420
申请日：2010-06-29
Applicant: Christopher Fred Keimel , Kanakasabapathi Subramanian , John N. Park , William James Premerlani , Owen Jannis Samuel Schelenz
Inventor： Christopher Fred Keimel , Kanakasabapathi Subramanian , John N. Park , William James Premerlani , Owen Jannis Samuel Schelenz
IPC: H03K17/567
CPC classification number: H03K17/10 , H03K17/0814 , H03K17/12
Abstract: A switching array includes a plurality of switching elements electrically coupled to each other, each switching element being configured to be switched between conducting and non-conducting states. The switching array also includes at least one parasitic minimizing circuitry electrically coupled to the plurality of switching elements and configured to provide near zero electrical voltage and current across and through each of the plurality of switching elements during switching of the plurality of switching elements between the conducting and non-conducting states.
Abstract translation: 开关阵列包括彼此电耦合的多个开关元件，每个开关元件被配置为在导通状态和非导通状态之间切换。 开关阵列还包括电耦合到多个开关元件的至少一个寄生最小化电路，并且被配置为在多个开关元件之间切换期间，在多个开关元件之间提供接近零的电压和电流。 和非执行国家。
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公开(公告)号：US20110127853A1
公开(公告)日：2011-06-02
申请号：US12629309
申请日：2009-12-02
Applicant: Lincoln Mamoru Fujita , Kanakasabapathi Subramanian
Inventor： Lincoln Mamoru Fujita , Kanakasabapathi Subramanian
IPC: H02B1/24
CPC classification number: G01D4/004 , H01H1/0036 , H01H59/0009 , Y02B90/242 , Y02B90/244 , Y04S20/322 , Y04S20/327 , Y10T307/74 , Y10T307/832 , Y10T307/865
Abstract: A current control device is described. The current control device includes at least one line socket configured to couple to a first power system. The current control device also includes at least one load socket configured to couple to a second power system and at least one micro-electromechanical system (MEMS) switching device coupled between the at least one line socket and the at least one load socket. The at least one MEMS switching device is configured to selectably couple the first power system to the second power system.
Abstract translation: 描述电流控制装置。 电流控制装置包括配置成耦合到第一电力系统的至少一个线路插座。 电流控制装置还包括配置成耦合到第二电力系统的至少一个负载插座和耦合在所述至少一个线路插座和所述至少一个负载插座之间的至少一个微机电系统（MEMS）开关装置。 所述至少一个MEMS开关装置被配置为将所述第一电力系统可选择地耦合到所述第二电力系统。
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