中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

53 records (took 0.021 seconds)

    Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same
    33.
    发明授权
    Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same 有权
    星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管

    公开(公告)号：US07692029B2

    公开(公告)日：2010-04-06

    申请号：US11116326

    申请日：2005-04-28

    Applicant: Kook Min Han ,  Eun Jeong Jeong ,  Chang Ju Kim ,  Eun Kyung Lee

    Inventor： Kook Min Han ,  Eun Jeong Jeong ,  Chang Ju Kim ,  Eun Kyung Lee

    IPC: C07D409/14 ,  C07D417/14 ,  C07D413/14 ,  H01L51/00

    CPC classification number: H01L51/0068 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0062 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/007 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0545

    Abstract: A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.

    Abstract translation: 具有p型半导体特性的低聚噻吩与具有位于分子的中心部分的n型半导体特性的亚芳基键合并形成具有亚芳基的星形的星形低聚噻吩 - 亚芳基衍生物，从而同时显示两者 p型和n型半导体特性。 另外，使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。 星形低聚噻吩 - 亚芳基衍生物可在室温下旋涂，导致同时满足高电荷载流子迁移率和低截止状态漏电流要求的有机薄膜晶体管的制造。

    Methods for forming banks and organic thin film transistors comprising such banks
    37.
    发明申请
    Methods for forming banks and organic thin film transistors comprising such banks 有权
    用于形成包括这种堤的堤和有机薄膜晶体管的方法

    公开(公告)号：US20070193978A1

    公开(公告)日：2007-08-23

    申请号：US11633006

    申请日：2006-12-04

    Applicant: Bon Won Koo ,  Joon Yong Park ,  Jung Seok Hahn ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

    Inventor： Bon Won Koo ,  Joon Yong Park ,  Jung Seok Hahn ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

    IPC: H01L29/06 ,  B44C1/22 ,  C23F1/00

    CPC classification number: H01L51/0512 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0558

    Abstract: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

    Abstract translation: 公开了一种在制造包含有机半导体材料的电子器件的过程中形成堤的方法，包括制备至少具有水溶性聚合物，UV固化剂和水溶性氟化合物的水性涂料组合物。 将该涂料组合物施加到基材上，使用UV辐射曝光，然后使用水性显影组合物显影以形成图案。 因为涂料组合物可以使用水性组合物而不是有机溶剂或溶剂体系显影，所以该方法倾向于保持存在于基材上的其它有机结构的完整性。 此外，氟化合物在水溶液中的引入提供了对在堤形图案的表面上显示的接触角的控制程度，从而可以避免或减少随后的表面处理。

    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds
    38.
    发明申请
    NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds 有权
    NPN型低分子芳环化合物和有机半导体以及掺入这种化合物的电子器件

    公开(公告)号：US20070166871A1

    公开(公告)日：2007-07-19

    申请号：US11508925

    申请日：2006-08-24

    Applicant: Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

    Inventor： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

    IPC: H01L51/40 ,  C07D417/14 ,  C07D497/14

    CPC classification number: C07D495/04 ,  C07D417/14 ,  H01L51/0545 ,  H01L51/5048

    Abstract: Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

    Abstract translation: 本文公开了NPN型低分子芳环化合物，由这些化合物形成的有机半导体层，其表现出改进的电稳定性，并且使用基于溶液的方法形成这种层的方法，例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜，然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜，该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料，从而改善所得器件的电性能。

    Organic thin film transistor comprising buffer layer
    39.
    发明授权
    Organic thin film transistor comprising buffer layer 有权
    包括缓冲层的有机薄膜晶体管

    公开(公告)号：US07049631B2

    公开(公告)日：2006-05-23

    申请号：US10843296

    申请日：2004-05-12

    Applicant: Bon Won Koo ,  In Nam Kang ,  Sang Yoon Lee ,  Kook Min Han

    Inventor： Bon Won Koo ,  In Nam Kang ,  Sang Yoon Lee ,  Kook Min Han

    IPC: H01L35/24

    CPC classification number: H01L51/0545 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0081 ,  H01L51/0097 ,  H01L51/052 ,  H01L51/10 ,  H01L51/5237 ,  Y02E10/549 ,  Y02P70/521

    Abstract: Disclosed herein is an organic thin film transistor comprising a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, source-drain electrodes and a protective layer wherein a buffer layer is interposed between the organic semiconductor layer and the protective layer. Such a transistor minimizes the deterioration in the performance of the transistor due to ambient air containing oxygen and moisture, and the degeneration in the performance of the transistor caused during mounting a display device.

    Abstract translation: 本发明公开了一种有机薄膜晶体管，其包括基板，栅电极，栅极绝缘层，有机半导体层，源 - 漏电极和保护层，其中缓冲层插入在有机半导体层和保护层之间。 这种晶体管由于包含氧和水分的环境空气以及在安装显示装置期间晶体管的性能的退化，使晶体管的性能的劣化最小化。

    Organic polymer semiconductor, method of preparing the same, and ambipolar organic thin film transistor using the same
    40.
    发明授权
    Organic polymer semiconductor, method of preparing the same, and ambipolar organic thin film transistor using the same 有权
    有机聚合物半导体，其制备方法和使用其的双极性有机薄膜晶体管

    公开(公告)号：US08354666B2

    公开(公告)日：2013-01-15

    申请号：US11790755

    申请日：2007-04-27

    Applicant: Bang Lin Lee ,  Eun Kyung Lee ,  Kook Min Han

    Inventor： Bang Lin Lee ,  Eun Kyung Lee ,  Kook Min Han

    IPC: H01L51/00

    CPC classification number: H01L51/0036 ,  C08G61/122 ,  C08G61/124 ,  C08G61/125 ,  C08G61/126 ,  C09K11/06 ,  C09K2211/1458 ,  C09K2211/1466 ,  H01L51/0545 ,  H05B33/14

    Abstract: Disclosed are an organic polymer semiconductor, an ambipolar organic thin film transistor using the same, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same. Example embodiments relate to an organic polymer semiconductor, which may include an aromatic ring derivative having p-type semiconductor properties and a heteroaromatic ring having n-type semiconductor properties in the main chain thereof, and which thus may exhibit both p-type transistor properties and n-type transistor properties when used in the organic active layer of an electronic device, e.g., an organic thin film transistor, an ambipolar organic thin film transistor using such an organic polymer semiconductor, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same.

    Abstract translation: 公开了有机聚合物半导体，使用该有机聚合物半导体的双极性有机薄膜晶体管，包含双极性有机薄膜晶体管的电子器件及其制造方法。 示例性实施方案涉及有机聚合物半导体，其可以包括具有p型半导体性质的芳族环衍生物和在其主链中具有n型半导体性质的杂芳族环，因此可以表现出p型晶体管性质和 当用于电子器件的有机活性层（例如有机薄膜晶体管，使用这种有机聚合物半导体的双极性有机薄膜晶体管），包括双极性有机薄膜晶体管的电子器件和方法 的制造。

Patent Agency Ranking