DETERMINING AZIMUTH ANGLE OF INCIDENT BEAM TO WAFER
    32.
    发明申请
    DETERMINING AZIMUTH ANGLE OF INCIDENT BEAM TO WAFER 失效
    确定入射光束的AZIMUTH角

    公开(公告)号:US20080316471A1

    公开(公告)日:2008-12-25

    申请号:US11766820

    申请日:2007-06-22

    IPC分类号: G01B11/26

    CPC分类号: G01B11/26

    摘要: A method, system and computer program product for determining an Azimuth angle of an incident beam to a wafer are disclosed. A method comprises: using the incident beam to make a first set of measurements of calibration targets of a first set of grating angles that are different than one another; analyzing the first set of measurements to determine an reference grating angle which corresponds to a grating line to which the incident beam has a practically zero Azimuth angle; and determining the Azimuth angle of the incident beam to the wafer using the determined reference grating angle.

    摘要翻译: 公开了一种用于确定入射光束到晶片的方位角的方法,系统和计算机程序产品。 一种方法包括:使用入射光束对彼此不同的第一组光栅角进行校准目标的第一组测量; 分析第一组测量以确定对应于入射光束具有实际上零方位角的光栅线的参考光栅角度; 以及使用所确定的参考光栅角度确定入射光束到晶片的方位角。

    Atomic force microscopy scanning and image processing
    34.
    发明授权
    Atomic force microscopy scanning and image processing 有权
    原子力显微镜扫描和图像处理

    公开(公告)号:US07406860B2

    公开(公告)日:2008-08-05

    申请号:US11413579

    申请日:2006-04-28

    IPC分类号: G01B6/28

    CPC分类号: G01Q40/00 B82Y35/00 G01Q30/06

    摘要: A topographic profile of a structure is generated using atomic force microscopy. The structure is scanned such that an area of interest of the structure is scanned at a higher resolution than portions of the structure outside of the area of interest. An profile of the structure is then generated based on the scan. To correct skew and tilt of the profile, a first feature of the profile is aligned with a first axis of a coordinate system. The profile is then manipulated to align a second feature of the profile with a second axis of the coordinate system.

    摘要翻译: 使用原子力显微镜产生结构的形貌。 扫描该结构使得结构的感兴趣区域以比目标区域外的结构的部分更高的分辨率被扫描。 然后基于扫描生成结构的轮廓。 为了校正轮廓的偏斜和倾斜,轮廓的第一特征与坐标系的第一轴对齐。 然后对该轮廓进行操纵以将轮廓的第二特征与坐标系的第二轴对齐。

    Measurement of critical dimension and quantification of electron beam size at real time using electron beam induced current
    35.
    发明授权
    Measurement of critical dimension and quantification of electron beam size at real time using electron beam induced current 有权
    使用电子束感应电流实时测量临界尺寸和电子束尺寸的量化

    公开(公告)号:US07397252B2

    公开(公告)日:2008-07-08

    申请号:US11461068

    申请日:2006-07-31

    摘要: A method for accurately measuring feature sizes and quantifying the beam spot size in a CDSEM at real time is provided. The inventive method is based on a scanning microscope and it works on both conductive and non-conductive features. The measurement of conductive feature includes first providing a conductive feature on a surface of a substrate (the substrate maybe an insulator, a semiconductor or a material stack thereof). The conductive feature is then connected to ground and thereafter an electron beam probe raster scans the sample. When the electron beam probe hits the conductive feature the spot will have a negative potential. The potential difference between the spot and the ground will induce an electrical current flow. When the electrical beam is off the conductive feature, there will be no current flow. Therefore, by measuring the current response to the location of the beam spot, the dimension of the conductive feature can be derived.

    摘要翻译: 提供了一种用于精确测量特征尺寸并实时量化CDSEM中的束斑大小的方法。 本发明的方法基于扫描显微镜,并且其工作在导电和非导电特征上。 导电特征的测量包括首先在衬底的表面上提供导电特征(衬底可以是绝缘体,半导体或其材料堆叠)。 然后将导电特征连接到地,然后电子束探测光栅扫描样品。 当电子束探针击中导电特征时,点将具有负电位。 点与地之间的电位差会引起电流流动。 当电束离开导电特征时,将不会有电流流动。 因此,通过测量电流对光斑位置的响应,可导出导电特征的尺寸。

    QUANTIFICATION OF ADSORBED MOLECULAR CONTAMINANT USING THIN FILM MEASUREMENT
    36.
    发明申请
    QUANTIFICATION OF ADSORBED MOLECULAR CONTAMINANT USING THIN FILM MEASUREMENT 有权
    使用薄膜测量的吸附分子污染物的定量

    公开(公告)号:US20080154519A1

    公开(公告)日:2008-06-26

    申请号:US12046542

    申请日:2008-03-12

    IPC分类号: G01N21/75

    CPC分类号: G01N1/2214 Y10T428/31663

    摘要: A test method for measuring adsorbed molecular contamination uses a test structure that includes a substrate comprising a plurality of separated test sites having a plurality separate thicknesses having a base design thickness and a designed thickness interrelationship. The test structure is exposed to a molecular contaminant environment to provide an adsorbed molecular contaminant layer upon each of the plurality of separated test sites. The plurality of separated test sites with the adsorbed molecular contaminant layer thereon is measured. An appropriate algorithm that considers the designed thickness interrelationship is used to determine at least one of: (1) the base design thickness; and (2) a thickness of the adsorbed molecular contaminant layer.

    摘要翻译: 用于测量吸附的分子污染物的测试方法使用测试结构,该测试结构包括包含多个分离的测试位置的基底,所述测试位置具有基本设计厚度和设计的厚度相互关系的多个分离的厚度。 测试结构暴露于分子污染环境,以在多个分离的测试位点中的每一个上提供吸附的分子污染物层。 测量其上具有吸附的分子污染物层的多个分离的测试位点。 考虑设计的厚度相互关系的适当算法用于确定以下至少一个:(1)基础设计厚度; 和(2)吸附的分子污染物层的厚度。

    E-field polarized materials
    38.
    发明授权
    E-field polarized materials 有权
    电场极化材料

    公开(公告)号:US07345302B2

    公开(公告)日:2008-03-18

    申请号:US10945756

    申请日:2004-09-21

    IPC分类号: H01L35/24 H01L51/00

    摘要: The invention described herein includes a molecular switch, comprising: a donor subunit; an acceptor subunit; and an aromatic bridging subunit comprising one or more bridging groups for bonding the donor subunit to the aromatic bridging subunit and for bonding the acceptor subunit to the aromatic bridging subunit wherein the aromatic bridging subunit is conformable in a manner effective for polarizing and de-polarizing the molecular switch at a low electric field voltage.

    摘要翻译: 本文描述的发明包括分子开关,包括:供体亚单位; 受体亚单位 以及芳族桥连亚单元,其包含一个或多个用于将供体亚基键合到芳族桥连亚单位的桥连基团和用于将受体亚基结合到芳族桥连亚单元上,其中芳族桥连亚单位以有效用于偏振和去极化的方式 分子开关处于低电场电压。

    Optical spot geometric parameter determination using calibration targets
    39.
    发明申请
    Optical spot geometric parameter determination using calibration targets 失效
    使用校准目标的光点几何参数确定

    公开(公告)号:US20080024781A1

    公开(公告)日:2008-01-31

    申请号:US11828666

    申请日:2007-07-26

    IPC分类号: G01B9/08

    CPC分类号: G03F7/70516

    摘要: A method, system and computer program product for determining a geometric parameter of an optical spot of a light beam are disclosed. A method comprises: providing a calibration target, the calibration target including a systematic variation in a parameter; measuring the calibration target with respect to the systematic variation using the light beam to obtain a plurality of measurements; and analyzing the measurements and the systematic variation to determine the geometric parameter of the optical spot.

    摘要翻译: 公开了一种用于确定光束的光点的几何参数的方法,系统和计算机程序产品。 一种方法包括:提供校准目标,所述校准目标包括参数中的系统变化; 使用光束测量相对于系统变化的校准目标以获得多个测量值; 并分析测量和系统变化,以确定光点的几何参数。

    Method for chemically bonding Langmuir-Blodgett films to substrates
    40.
    发明授权
    Method for chemically bonding Langmuir-Blodgett films to substrates 失效
    将Langmuir-Blodgett膜化学键合到底物上的方法

    公开(公告)号:US07297557B2

    公开(公告)日:2007-11-20

    申请号:US10880482

    申请日:2004-06-30

    IPC分类号: H01L21/00 H01L21/31 C12Q1/70

    摘要: A method of attaching a molecular layer to a substrate includes attaching a temporary protecting group(s) to a molecule having a molecular switching moiety with first and second connecting groups attached to opposed ends thereof. The temporary protecting group(s) is attached to the first and/or second connecting group so as to cause the opposed ends of the switching moiety to exhibit a difference in hydrophilicity such that one of the ends remains at at least one of a water/solvent interface and a water/air interface, and the other end remains in air during a Langmuir-Blodgett (LB) process. An LB film is formed on the interface. The temporary protecting group(s) is removed. The substrate is passed through the LB film to form the molecular layer chemically bonded on the substrate. The difference in hydrophilicity between the opposed ends causes formation of a substantially well-oriented, uniform LB film at the interface.

    摘要翻译: 将分子层连接到基底上的方法包括将临时保护基与具有分子切换部分的分子连接,第一和第二连接基团连接到其相对端。 临时保护基团连接到第一和/或第二连接基团,以使开关部分的相对端部呈现亲水性差异,使得其中一个端部残留在水/ 溶剂界面和水/空气界面,另一端在Langmuir-Blodgett(LB)过程中保留在空气中。 在界面上形成LB膜。 临时保护组被删除。 使衬底通过LB膜以形成化学键合在衬底上的分子层。 在相对端之间的亲水性差异导致在界面处形成基本上良好取向的均匀的LB膜。