Semiconductor optical device
    31.
    发明授权

    公开(公告)号:US11880098B2

    公开(公告)日:2024-01-23

    申请号:US17809716

    申请日:2022-06-29

    IPC分类号: G02F1/015

    CPC分类号: G02F1/0155

    摘要: A semiconductor optical device includes: a buried layer having a side surface, an upper surface, and an intermediate region; an insulating film on the upper surface of the buried layer; and an electrode including a mesa electrode, a pad electrode, and a lead-out electrode. The upper surface of the buried layer has an outer edge including a first edge extending along the first direction and a second edge extending along a second direction. The intermediate region includes an upright surface that stands straight between the side surface and the first edge, and a slope surface that slopes more gently than the upright surface and extends downward from the second edge. The lead-out electrode includes a portion on the insulating film and connected to the pad electrode, another portion on the intermediate region and through the slope surface, and another portion connected to the mesa electrode.

    SEMICONDUCTOR LASER
    33.
    发明申请

    公开(公告)号:US20220360048A1

    公开(公告)日:2022-11-10

    申请号:US17449560

    申请日:2021-09-30

    摘要: A semiconductor laser includes: a multi-quantum well layer in a mesa structure; a buried layer comprising a semi-insulating semiconductor, the buried layer being in contact with each of both sides of the mesa structure; a first cladding layer with a first conductivity type, the first cladding layer having a lower refractive index than the multi-quantum well layer; a high refractive index layer configured to not absorb light oscillating in the multi-quantum well layer, the high refractive index layer having a higher refractive index than the first cladding layer; a diffraction grating layer at least partially constituting a diffraction grating capable of diffracting the light oscillating in the multi-quantum well layer, the diffraction grating layer not contacting the high refractive index layer; a substrate with the first conductivity type; and a second cladding layer with a second conductivity type above the multi-quantum well layer.

    Semiconductor light-receiving element

    公开(公告)号:US11476382B2

    公开(公告)日:2022-10-18

    申请号:US17362316

    申请日:2021-06-29

    摘要: A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more. At least one of the low-concentration layers includes an absorption layer with a band gap that absorbs incident light.

    Buried-type semiconductor optical device

    公开(公告)号:US11462886B2

    公开(公告)日:2022-10-04

    申请号:US16845223

    申请日:2020-04-10

    摘要: A buried semiconductor optical device comprises a semiconductor substrate; a mesa-stripe portion including a multi-quantum well layer on the semiconductor substrate; a buried layer consisting of a first portion and a second portion, the first portion covering one side of the mesa-stripe portion, the second portion covering the other side of the mesa-stripe portion, and the first portion and the second portion covering a surface of the semiconductor substrate; and an electrode configured to cause an electric current to flow through the mesa-stripe portion, the buried layer comprising, from the surface, a first, second, and third sublayer, the first and third sublayer each consisting of semi-insulating InP, the first sublayer and the second sublayer forming a pair structure, the second sublayer being located above the multi-quantum well layer, and the second sublayer consisting of one or more layers selected from InGaAs, InAlAs, InGaAlAs, InGaAsP, and InAlAsP.

    Optical module and optical communication system

    公开(公告)号:US11316592B2

    公开(公告)日:2022-04-26

    申请号:US17248810

    申请日:2021-02-09

    摘要: An optical module includes a photoelectric converter configured to receive an optical signal having an intensity that changes at one of a first frequency or a second frequency that is higher than the first frequency, and convert the optical signal into a current signal corresponding to the intensity of the optical signal; a signal processor configured to acquire, when the optical signal has the intensity that changes at the first frequency, wavelength information set on a transmitting side based on a ratio between a plurality of signal intensities included in the current signal relating to the optical signal having the intensity that changes at the first frequency; and a decoder configured to generate, when the optical signal has the intensity that changes at the second frequency, communication data from the current signal relating to the optical signal having the intensity that changes at the second frequency.

    Optical communication module
    37.
    发明授权

    公开(公告)号:US11256050B2

    公开(公告)日:2022-02-22

    申请号:US16864994

    申请日:2020-05-01

    IPC分类号: G02B6/42

    摘要: An optical communication module includes a first power-supplied terminal to be brought into contact with a first power supply terminal to have a first power supply voltage applied thereto; a second power-supplied terminal to be brought into contact with the second power supply terminal to have a second power supply voltage applied thereto; a signal processing circuit, which is connected to the first power-supplied terminal and the second power-supplied terminal, configured to perform processing on a signal; and a power control circuit, which is provided between the first power-supplied terminal and the signal processing circuit, configured to control connection between the first power-supplied terminal and the signal processing circuit based on a voltage applied to the second power-supplied terminal.

    OPTICAL MODULE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20220007495A1

    公开(公告)日:2022-01-06

    申请号:US17447824

    申请日:2021-09-16

    发明人: Daisuke NOGUCHI

    摘要: A printed circuit board includes a first transmission line provided on an insulating base, a first ground conductor, a notch portion that exposes a part of the first ground conductor, a conductor provided in the notch portion and electrically connected to the first ground conductor, and a first electrode exposed on a main surface of the insulating base facing a flexible board and electrically connected to the first transmission line. The flexible board includes a second transmission line provided on an insulating sheet, a second ground conductor, a second electrode exposed on a main surface of the insulating sheet facing the printed circuit board and connected to the second transmission line, and a third electrode exposed on the main surface of the insulating sheet and connected to the second ground conductor. The conductor and the third electrode are connected by solder.

    Modulation doped semiconductor laser and manufacturing method therefor

    公开(公告)号:US11196232B2

    公开(公告)日:2021-12-07

    申请号:US16845235

    申请日:2020-04-10

    摘要: A modulation doped semiconductor laser includes a multiple quantum well composed of a plurality of layers including a plurality of first layers and a plurality of second layers stacked alternately and including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the plurality of first layers including the acceptor so that a p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the acceptor so that the p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the donor, and an effective carrier concentration corresponding to a difference between the p-type carrier concentration and an n-type carrier concentration is 10% or less of the p-type carrier concentration of the plurality of second layers.

    OPTICAL DEVICE HAVING A SUBSTRATE AND A LASER UNIT THAT EMITS LIGHT INTO THE SUBSTRATE

    公开(公告)号:US20210351562A1

    公开(公告)日:2021-11-11

    申请号:US17443353

    申请日:2021-07-26

    摘要: An optical device includes a first substrate, having first and second surfaces, and a second substrate having a third surface. The first substrate includes: a laser unit, having an active layer and emitting light into the first substrate from the active layer; a reflecting mirror, having a plane obliquely intersecting an optical axis of light emitted from the laser unit, and being formed on the first surface so as to reflect the light toward the second surface; and a convex lens, being formed in a region on the second surface, the region including an optical axis of the light reflected by the reflecting mirror. The second substrate is provided with a grating coupler and an optical waveguide on the third surface, the optical waveguide having light incident on the grating coupler propagating therethrough.