公开(公告)号：US3823336A

公开(公告)日：1974-07-09

申请号：US22530772

申请日：1972-02-10

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NAKAMURA H ,  SUZUKI Y ,  DOI K ,  SATO A

IPC: H01J29/07 ,  H01J29/06 ,  H01J29/08 ,  H01J31/20

CPC classification number: H01J29/073

Abstract: In a shadow mask support means comprising a bi-metal piece having one end secured to a shadow mask frame with the other end left free, and a leaf spring secured at one end to said free end of the bi-metal piece and extending therefrom toward a pin provided on a side wall of a face panel, the improvement residing in that a metallic plate portion disposed between said frame and said spring is so arranged that it is displaced due to thermal deflection of the bi-metal at the end adjacent to said pin by an amount smaller than the displacement at the opposite end.

公开(公告)号：US3795887A

公开(公告)日：1974-03-05

申请号：US3795887D

申请日：1972-09-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： HIGUCHI N

IPC: H01J5/50 ,  H01J5/56 ,  H01J5/62 ,  H01R13/26

CPC classification number: H01J5/62 ,  H01J5/565

Abstract: A base for an annular lamp comprising a pair of semicylindrical members and base pins upstanding from one of these members. Each base pin is provided with an axial slit for holding therein an external lead of a glass bulb.

Abstract translation: 一种用于环形灯的基座，包括一对半圆柱形构件和从这些构件中的一个竖立的底座销。 每个底销设置有用于保持玻璃灯泡的外部引线的轴向狭缝。

公开(公告)号：US3780329A

公开(公告)日：1973-12-18

申请号：US3780329D

申请日：1972-11-07

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： HOMMO M ,  OTSUKA H ,  NOHMI K

IPC: H01J61/16 ,  H01J61/20 ,  H01J61/72

CPC classification number: H01J61/20 ,  H01J61/72

Abstract: Luminous flux and luminous efficiency of a 40 watt fluorescent lamp comprising a ballast specified by the I.E.C. Publication 82 (covering Ballast for fluorescent lamps) is greatly improved by employing an improved tube characterized by: HAVING THE NOMINAL TUBE LENGTH OF 1,200 MM AND THE INNER DIAMETER OF 20 MM TO 25 MM, PROVIDED INSIDE AT EACH END OF THE TUBE WITH AN ELECTRODE E having the length l of 15 mm to 55 mm inward (, from the end face of each cap C as measured as shown in FIG. 2,) and containing mixed rare gas inside the tube, the rare gas having composition ratio represented by any point within a diagonal region defined by connecting the following points (a) to (e) and (a) with straight lines in the following order, on a trilinear chart for xenon, krypton and argon mixture: A.Xe: 1%, Kr: 0%, A: 99% b. Xe: 15%, Kr: 0%, A: 85% c.Xe: 15%, Kr: 65%, A: 20% d.Xe: 0%, Kr: 80%, A: 20% e.Xe: 0%, Kr: 5% A: 95% the pressure of the mixed gas being between 1.0 mmHg and 3.5 mmHg at the temperature of 20*C.

Abstract translation: 包含由I.E.C.规定的镇流器的40瓦特荧光灯的发光通量和发光效率。 出版物82（覆盖荧光灯的镇流器）通过使用改进的管子被大大改进，其特征在于：

公开(公告)号：US3763408A

公开(公告)日：1973-10-02

申请号：US3763408D

申请日：1969-08-15

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO G ,  IIZUKA M ,  SAWAKI T ,  FUJIWARA S ,  HASEGAWA H

IPC: H01L23/485 ,  H01L29/00 ,  H01L11/00 ,  H01L15/00

CPC classification number: H01L23/485 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semi-conductor device, such as diode transistor, field effect transistor with a Schottky barrier, has a separation space formed underneath the insulating film covering a major surface portion of the semiconductor substrate. This separation space is disposed adjacent to a metal layer accommodated in a recess in the substrate and extending through an opening in the insulating film, so as to eliminate unreasonable reverse leakage current, by effectively insulating the Schottky barrier from the electric charge accumulation layer beneath the insulating film.

Abstract translation: 诸如二极管晶体管的半导体器件，具有肖特基势垒的场效应晶体管具有形成在覆盖半导体衬底的主表面部分的绝缘膜下方的分离空间。 该分离空间与容纳在基板中的凹部中的金属层相邻设置并延伸穿过绝缘膜中的开口，以便通过有效地将肖特基势垒与电荷积累层有效地绝缘在消除不合理的反向泄漏电流 绝缘膜。

公开(公告)号：US3716743A

公开(公告)日：1973-02-13

申请号：US3716743D

申请日：1970-08-28

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： MIZUNO H ,  KIMURA S ,  AKUTSU H ,  WATARAI Y ,  BABA S ,  YAMAZAKI H ,  OKAMOTO T

IPC: H01J61/04 ,  H01J17/16

CPC classification number: H01J61/045

Abstract: In a discharge tube of saturated metal vapor pressure type containing high-pressure gaseous or vaporized metals, the temperature of the coolest points existing at both ends of the discharge tube can be raised by forming a layer or layers of a metal or metals of high melting point, low vapor pressure and good thermal conductivity, such as niobium, on the outer wall at the ends of the discharge tube; thereby, providing better radiant emission, especially higher color temperature and an improved color rendering property compared with conventional high-pressure metal-vapor discharge tubes. The discharge tube of the abovementioned construction can be manufactured easily and has a longer life under burning conditions corresponding to those for conventional type high-pressure metal-vapor discharge tubes.

Abstract translation: 在含有高压气态或汽化金属的饱和金属蒸气压放电管中，放电管两端存在的最冷点的温度可以通过形成一层或多层金属或高熔点金属来提高 点，低蒸气压和良好的导热性，如铌，放电管末端的外壁; 从而与传统的高压金属蒸汽放电管相比，提供更好的辐射发射，特别是更高的色温和更好的显色性能。 上述结构的放电管可以容易地制造并且在与常规型高压金属蒸汽放电管相对应的燃烧条件下具有更长的寿命。

公开(公告)号：US3714488A

公开(公告)日：1973-01-30

申请号：US3714488D

申请日：1971-09-17

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KATO R

IPC: H01J29/02 ,  H01J31/26 ,  H01J31/38

CPC classification number: H01J29/026

Abstract: A target assembly of an image pick-up tube including a face plate hermetically fastened on one open end of a tubular envelope of the image pick-up tube through pressure welded binding member composed of indium which is interposed therebetween. A support member supporting therein a target substrate is mounted on the inner surface of the face plate and secured thereto through its peripheral wall combined with the binding member. On the peripheral wall is formed a groove extending circumferentially thereof. The binding member combines with the groove so that the support member favorably fastened to the face plate.

Abstract translation: 图像拾取管的目标组件，其包括通过夹在其间的由铟构成的压焊结合件气密地紧固在图像拾取管的管状外壳的一个开口端上的面板。 支撑在其上的支撑构件安装在面板的内表面上并通过其与结合构件组合的周壁固定到其上。 在周壁上形成有沿其周向延伸的凹槽。 装订构件与凹槽结合，使得支撑构件有利地紧固到面板。

公开(公告)号：US3671794A

公开(公告)日：1972-06-20

申请号：US3671794D

申请日：1970-03-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NAKAMURA HIROTO ,  SATO AKIRA ,  DOI KEN-ICHI

IPC: H01J29/07 ,  H01J29/06 ,  H01J31/20

CPC classification number: H01J29/073

Abstract: A shadow mask support means including three leaf springs for supporting a rectangular shadow mask on a face panel at three sides of a frame of the mask, said three leaf springs having a predetermined relationship with respect to the spring constant and deflection so that, even when the image tube is subjected to a shock load or the shadow mask in thermally expanded, the change in the relative position of the shadow mask and the face panel is minimized.

Abstract translation: 一种荫罩支撑装置，包括三个板簧，用于在面罩的框架的三侧在面板上支撑矩形荫罩，所述三个板簧相对于弹簧常数和偏转具有预定的关系，使得即使 图像管受到热膨胀的冲击负荷或荫罩，荫罩和面板的相对位置的变化被最小化。

公开(公告)号：US3641383A

公开(公告)日：1972-02-08

申请号：US3641383D

申请日：1969-09-22

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TAGAWA HAZIME

IPC: H01J17/49 ,  H01J61/66

CPC classification number: H01J17/491

Abstract: A glow discharge tube for code display in which a plurality of cold cathodes in the shape of a plate comprising a segmented portion forming a luminous code and a lead connected to that portion are piled up with a window-frame-shaped insulating plate interposing between each layer to construct a cold cathode structural body and interposing the said lead between the said insulating plates in order to prevent a negative glow at the said lead portion.

Abstract translation: 一种用于代码显示的辉光放电管，其中包括形成发光码的分段部分的板状的多个冷阴极和与该部分相连接的引线被堆叠在一个插入每个之间的窗框形绝缘板 以构造冷阴极结构体并将所述引线插入所述绝缘板之间，以便防止在所述引线部分处产生负辉光。

公开(公告)号：US3634931A

公开(公告)日：1972-01-18

申请号：US3634931D

申请日：1969-12-09

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO GOTA ,  YOKOZAWA MASAMI ,  KAWASAKI TATSUO ,  FUJIWARA SHOHEI ,  HASEGAWA HIROMASA

IPC: G01L1/18 ,  H01L21/00 ,  H01L29/00 ,  H01L29/84 ,  B01J17/00 ,  H01L7/02

CPC classification number: H01L29/84 ,  G01L1/18 ,  H01L21/00 ,  H01L29/00

Abstract: In a semiconductor device with a four-layer structure having the so-called thyristor characteristic, when the control electrode for controlling its breakover voltage is constructed by the Schottky barrier and a means to apply a stress to the barrier, the breakover voltage of the said semiconductor device can be controlled by the stress. If this device is assembled in a circuit system, the circuit system can be set to either the ''''off'''' or ''''on'''' state, corresponding to the applied stress.

Abstract translation: 在具有所谓的晶闸管特性的具有四层结构的半导体器件中，当用于控制其跳变电压的控制电极由肖特基势垒构成并且对屏障施加应力的装置时，所述 半导体器件可以通过应力控制。 如果该设备组装在电路系统中，则电路系统可以设置为对应于施加的应力的“关闭”或“开启”状态。

公开(公告)号：US3615945A

公开(公告)日：1971-10-26

申请号：US3615945D

申请日：1969-06-11

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YOKOZAWA MASAMI

IPC: B60P1/16 ,  C30B31/06 ,  H01L21/00 ,  H01L21/22 ,  H01L7/44

CPC classification number: H01L21/00 ,  B60P1/16 ,  C30B31/06 ,  H01L21/22 ,  Y10S148/04 ,  Y10S148/041 ,  Y10S148/151

Abstract: A deep aluminum-diffused P-type layer and a shallow-diffused layer of a preselected conductivity type are simultaneously diffused into a semiconductor substrate by a double diffusion process which employs a composite impurity source. The composite impurity source consists of an aluminum receptacle having a predetermined amount of at least one shallow diffusing, conductivity type determining impurity enclosed therein. The receptacle may be fabricated from a uniformly thick aluminum foil and the shallow diffusing impurity may consist of, for example, boron, phosphorus, indium and/or antimony.