公开(公告)号：US3519479A

公开(公告)日：1970-07-07

申请号：US3519479D

申请日：1966-12-06

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： INOUE MORIO ,  KANO GOTA ,  MATSUNO JINICHI ,  TAKAYANAGI SHIGETOSHI

IPC: C23C16/14 ,  C23C16/16 ,  H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L7/00 ,  H01L7/36

CPC classification number: H01L27/00 ,  C23C16/14 ,  C23C16/16 ,  H01L21/00 ,  H01L29/00 ,  Y10S148/049 ,  Y10S438/909 ,  Y10T428/12528 ,  Y10T428/31678

公开(公告)号：US3634931A

公开(公告)日：1972-01-18

申请号：US3634931D

申请日：1969-12-09

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO GOTA ,  YOKOZAWA MASAMI ,  KAWASAKI TATSUO ,  FUJIWARA SHOHEI ,  HASEGAWA HIROMASA

IPC: G01L1/18 ,  H01L21/00 ,  H01L29/00 ,  H01L29/84 ,  B01J17/00 ,  H01L7/02

CPC classification number: H01L29/84 ,  G01L1/18 ,  H01L21/00 ,  H01L29/00

Abstract: In a semiconductor device with a four-layer structure having the so-called thyristor characteristic, when the control electrode for controlling its breakover voltage is constructed by the Schottky barrier and a means to apply a stress to the barrier, the breakover voltage of the said semiconductor device can be controlled by the stress. If this device is assembled in a circuit system, the circuit system can be set to either the ''''off'''' or ''''on'''' state, corresponding to the applied stress.

Abstract translation: 在具有所谓的晶闸管特性的具有四层结构的半导体器件中，当用于控制其跳变电压的控制电极由肖特基势垒构成并且对屏障施加应力的装置时，所述 半导体器件可以通过应力控制。 如果该设备组装在电路系统中，则电路系统可以设置为对应于施加的应力的“关闭”或“开启”状态。

公开(公告)号：US3591838A

公开(公告)日：1971-07-06

申请号：US3591838D

申请日：1968-12-23

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： FUJIWARA SHOHEI ,  KANO GOTA ,  MATSUOKA SHUNSUKE ,  SAWAKI TSUKASA

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/24 ,  H01L21/28 ,  H01L21/283 ,  H04R1/10 ,  H04R5/033 ,  H01L3/00

CPC classification number: H01L21/28 ,  H01L21/00 ,  H01L21/24 ,  H01L21/283 ,  Y10S148/02

Abstract: In a semiconductor device a metal electrode film formed by an evaporated gold-chromium alloy containing 3 percent to 13 percent by weight of chromium can not only make low ohmic contact with the semiconductor substrate but can be connected to it mechanically firmly. The lead-tin eutectic alloy can be soldered satisfactorily to the metal electrode film without causing erosion even if the electrode film is dipped in a fused solder solution. The semiconductor device with such a gold-chromium alloy film has great industrial merit since the manufacturing steps, particularly the connection of external electrode lead wires, are greatly simplified.

公开(公告)号：US3480475A

公开(公告)日：1969-11-25

申请号：US3480475D

申请日：1967-03-21

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： INOUE MORIO ,  KANO GOTA ,  MATSUNO JINICHI ,  TAKAYANAGI SHIGETOSHI

IPC: C23C16/14 ,  C23C16/16 ,  H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  B44D1/14 ,  B44D1/20

CPC classification number: H01L27/00 ,  C23C16/14 ,  C23C16/16 ,  H01L21/00 ,  H01L29/00 ,  Y10S148/049 ,  Y10S438/909 ,  Y10T428/12528 ,  Y10T428/31678

公开(公告)号：US3543386A

公开(公告)日：1970-12-01

申请号：US3543386D

申请日：1966-09-28

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： INOUE MORIO ,  KANO GOTA

IPC: C03C17/09 ,  C04B37/02 ,  C04B41/51 ,  C04B41/88 ,  C23C16/14 ,  C23C16/16 ,  B23K3/02

CPC classification number: C04B41/88 ,  C03C17/09 ,  C03C2217/263 ,  C03C2218/15 ,  C04B37/026 ,  C04B41/5133 ,  C04B2235/5427 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/6582 ,  C04B2237/122 ,  C04B2237/125 ,  C04B2237/34 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/348 ,  C04B2237/407 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/765 ,  C23C16/14 ,  C23C16/16

Abstract: 1,150,753. Brazing. MATSUSHITA ELECTRONICS CORP. 26 Sept., 1966 [28 Sept., 1965], No. 42915/66. Heading B3R. [Also in Divisions C1 and C7] A gas-tight seal is formed between a metal and a ceramic or a crystallized glass by depositing a film of W or Mo from the vapour phase by reduction of a halide or thermal decomposition of a carbonyl, while maintaining the ceramic or glass at a temperature above 500‹ C., and then brazing the metallized portion to a metal body or a metallized surface. In examples, copper tubes are silver brazed to Mo and W coated ceramic tubes.

公开(公告)号：US3515583A

公开(公告)日：1970-06-02

申请号：US3515583D

申请日：1967-03-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： INOUE MORIO ,  KANO GOTA ,  MATSUNO JINICHI ,  TAKAYANAGI SHIGETOSHI

IPC: C23C16/12 ,  H01L21/00 ,  H01L29/00

CPC classification number: H01L21/00 ,  C23C16/12 ,  H01L29/00 ,  Y10S148/142 ,  Y10T428/31678