公开(公告)号：US20090201475A1

公开(公告)日：2009-08-13

申请号：US12114409

申请日：2008-05-02

申请人： MARTIN C. PECKERAR ,  MARIO DAGENAIS ,  BIRENDRA DUTT ,  JOHN D. BARRY ,  MICHAEL D. MESSINA, JR. ,  YVES NGU

发明人： MARTIN C. PECKERAR ,  MARIO DAGENAIS ,  BIRENDRA DUTT ,  JOHN D. BARRY ,  MICHAEL D. MESSINA, JR. ,  YVES NGU

IPC分类号： G03B27/42 ,  G03B27/32

CPC分类号： G03F7/70433 ,  G03F1/50 ,  G03F1/54

摘要： A stepper system for ultra-high resolution nano-lithography employs a photolithographic mask which includes a layer of an electrically conductive optically opaque material in which periodic arrays of sub-wavelength apertures are formed. The plasmonic excitation in the photolithographic mask exposed to the light of the wavelength in the range of 197 nm-248 nm, produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer. The stepper system demonstrates the resiliency to the mask defects and ability to imprint coherent clear features of nano dimensions (45 nm-500 nm) and various shapes on the wafers for integrated circuits design. The stepper system may be adjusted to image the plane of the highest plasmonic field exiting the mask.

摘要翻译： 用于超高分辨率纳米光刻的步进系统采用光刻掩模，其包括其中形成有周期性的亚波长孔径阵列的导电光学不透明材料层。 暴露于波长在197nm-248nm范围内的光的光刻掩膜中的等离激元激发产生足够强度的高分辨率远场辐射图，以使晶片上的光刻胶曝光。 步进系统显示了对于掩模缺陷的弹性和在纳米尺寸（45nm-500nm））和用于集成电路设计的晶片上的各种形状的相干清晰特征的印记能力。 可以调整步进系统以对离开掩模的最高等离子体场的平面进行成像。

公开(公告)号：US20090068570A1

公开(公告)日：2009-03-12

申请号：US12114373

申请日：2008-05-02

申请人： MARTIN C. PECKERAR ,  MARIO DAGENAIS ,  BIRENDRA DUTT ,  JOHN D. BARRY ,  MICHAEL D. MESSINA, JR. ,  YVES NGU

发明人： MARTIN C. PECKERAR ,  MARIO DAGENAIS ,  BIRENDRA DUTT ,  JOHN D. BARRY ,  MICHAEL D. MESSINA, JR. ,  YVES NGU

IPC分类号： G03F1/00 ,  B29C35/02

CPC分类号： G03F7/70433 ,  G03F1/50 ,  G03F1/54

摘要： A nanophotolithography mask includes a layer of an electrically conductive optically opaque material deposited on a mask substrate in which regular arrays of sub-wavelength apertures are formed. The plasmonic excitation in the layer perforated with the sub-wavelength apertures arrays under the light incident on the mask produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer when propagated to the same. The fill-factor of the mask, i.e., the ratio of the total apertures area to the total mask area, may lead to a significant increase in mask manufacturing throughput by FIB or electron beam “writing”. The mask demonstrates the defect resiliency and ability to imprint coherent clear features of nano dimensions and shapes on the wafers for integrated circuits design.

摘要翻译： 纳米光刻掩模包括沉积在其上形成有规则的亚波长孔径阵列的掩模基板上的导电光学不透明材料层。 在入射到掩模上的光下，在亚波长孔径阵列穿孔的层中的等离子体激发产生足够强度的高分辨率远场辐射图，以在传播到晶片上时暴露光致抗蚀剂。 掩模的填充因子，即总孔面积与总掩模面积的比率可能导致通过FIB或电子束“写入”的掩模制造通过量的显着增加。 该面具证明了在集成电路设计的晶圆上印刷纳米尺寸和形状的相干清晰特征的缺陷弹性和能力。

公开(公告)号：US07359113B2

公开(公告)日：2008-04-15

申请号：US11346526

申请日：2006-02-02

申请人： Simarjeet S. Saini ,  Jerry L. Bowser ,  Vincent K. Luciani ,  Peter J. S. Heim ,  Mario Dagenais

发明人： Simarjeet S. Saini ,  Jerry L. Bowser ,  Vincent K. Luciani ,  Peter J. S. Heim ,  Mario Dagenais

IPC分类号： H01S3/00

CPC分类号： H01S5/0425 ,  H01S5/22 ,  H01S5/50 ,  H01S2301/04

摘要： A semiconductor optical amplifier (SOA) with efficient current injection is described. Injection current density is controlled to be higher in some areas and lower in others to provide, e.g., improved saturation power and/or noise figure. Controlled injection current can be accomplished by varying the resistivity of the current injection electrode. This, in turn, can be accomplished by patterning openings in the dielectric layer above the current injection metallization in a manner which varies the series resistance along the length of the device.

摘要翻译： 描述了一种具有高效电流注入的半导体光放大器（SOA）。 注入电流密度在一些区域被控制得更高，而另一些区域的注入电流密度更低，以提供例如改善的饱和功率和/或噪声系数。 控制注入电流可以通过改变电流注入电极的电阻率来实现。 这又可以通过以沿设备长度改变串联电阻的方式在电流注入金属化之上的电介质层中图案化开口来实现。

公开(公告)号：US06506672B1

公开(公告)日：2003-01-14

申请号：US09608138

申请日：2000-06-30

申请人： Mario Dagenais ,  Scott A. Merritt ,  Madhumita Datta

发明人： Mario Dagenais ,  Scott A. Merritt ,  Madhumita Datta

IPC分类号： H01L2144

CPC分类号： H01L21/288 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/13109 ,  H01L2224/16145 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/81907 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/20752 ,  H01L2924/00014

摘要： A electroless plating method re-metallizes aluminum bond pads so that the re-metallized bond pads include layers of aluminum, zinc, nickel, and gold. The re-metallized bond pads are wire-bondable and solder wettable, and therefore can be flip-chip bonded. Applications include the realization of hybrid smart pixel arrays for optical interconnections, where an optical transmitter and optical detector are flip-chip bonded directly to respective CMOS driver chips.

摘要翻译： 化学镀方法重新金属化铝接合焊盘，使得金属化的接合焊盘包括铝，锌，镍和金的层。 重新金属化的接合焊盘是可焊接的和焊料可润湿的，因此可以倒装芯片焊接。 应用包括实现用于光学互连的混合智能像素阵列，其中光发射器和光学检测器直接倒装到相应的CMOS驱动器芯片上。

公开(公告)号：US06339496B1

公开(公告)日：2002-01-15

申请号：US09599428

申请日：2000-06-22

申请人： Bikash Koley ,  Mario Dagenais

发明人： Bikash Koley ,  Mario Dagenais

IPC分类号： H01S30933

CPC分类号： H01S5/50 ,  H01S5/0207 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/423

摘要： A cavity-less vertical semiconductor optical amplifier is provided which includes an active region of an intrinsic bulk semiconductor material sandwiched between p- and n-layers of semiconductor materials in which a vertical gain channel of a predetermined confined cross-sectional configuration is formed to constitute an amplification region of the optical amplifier. The amplification region is sandwiched between layers of p- and n-doped layers of linearly graded semiconductor material supplying holes and electrons to the active region upon switching “ON” of the optical amplifier. Several factors contribute to substantial amplification of an optical signal at a relatively low injection current which include a relatively long active region allowing sufficient single pass gain as well as a strictly confined cross-sectional configuration of the vertical gain channel which reduces the active volume of the amplification region resulting in substantially high gain at a relatively low current. Flattening of the conduction band and valence band profiles allows easy access of the holes and electrons into the active region. The cavity-less vertical semiconductor optical amplifier of the present invention is intended for multidimensional architectural structures for high speed communication.

摘要翻译： 提供了一种无空腔垂直半导体光放大器，其包括夹在半导体材料的p层和n层之间的本征体半导体材料的有源区，其中形成预定的限定横截面构造的垂直增益沟道以构成 光放大器的放大区域。 当光放大器“ON”时，放大区夹在线性梯度半导体材料的p型和n型掺杂层之间，向有源区提供空穴和电子。 几个因素有助于在相对较低的注入电流下实质地放大光学信号，其包括允许足够的单程增益的相对长的有源区以及垂直增益通道的严格限定的横截面配置，其减小了 放大区域在相对低的电流下导致基本上高的增益。 导带和价带分布的平坦化使得孔和电子容易接近有源区域。 本发明的无腔垂直半导体光放大器旨在用于高速通信的多维架构结构。