公开(公告)号：US06610612B2

公开(公告)日：2003-08-26

申请号：US10012352

申请日：2001-12-12

Applicant: Mario Dagenais ,  Bikash Koley ,  Frederick G. Johnson

Inventor： Mario Dagenais ,  Bikash Koley ,  Frederick G. Johnson

IPC: H01L2100

CPC classification number: B82Y20/00 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/2215 ,  H01S5/34306 ,  H01S5/3434

Abstract: A method of selectively oxidizing III-V semiconductor material is provided. There is provided a III-V semiconductor system comprising a short-period super lattice (SSL) of N periods of alternating layers of an aluminum-bearing III-V compound semiconductor material and a second III-V semiconductor material where N≧2, at least one phosphorous-rich III-V semiconductor layer, and at least one substantially phosphorous-free III-V semiconductor layer between each of the at least one phosphorous-rich layers and the SSL. The III-V semiconductor system is exposed to oxidizing atmosphere to selectively oxidize at least a portion of the SSL.

公开(公告)号：US06339496B1

公开(公告)日：2002-01-15

申请号：US09599428

申请日：2000-06-22

Applicant: Bikash Koley ,  Mario Dagenais

Inventor： Bikash Koley ,  Mario Dagenais

IPC: H01S30933

CPC classification number: H01S5/50 ,  H01S5/0207 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/423

Abstract: A cavity-less vertical semiconductor optical amplifier is provided which includes an active region of an intrinsic bulk semiconductor material sandwiched between p- and n-layers of semiconductor materials in which a vertical gain channel of a predetermined confined cross-sectional configuration is formed to constitute an amplification region of the optical amplifier. The amplification region is sandwiched between layers of p- and n-doped layers of linearly graded semiconductor material supplying holes and electrons to the active region upon switching “ON” of the optical amplifier. Several factors contribute to substantial amplification of an optical signal at a relatively low injection current which include a relatively long active region allowing sufficient single pass gain as well as a strictly confined cross-sectional configuration of the vertical gain channel which reduces the active volume of the amplification region resulting in substantially high gain at a relatively low current. Flattening of the conduction band and valence band profiles allows easy access of the holes and electrons into the active region. The cavity-less vertical semiconductor optical amplifier of the present invention is intended for multidimensional architectural structures for high speed communication.

Abstract translation: 提供了一种无空腔垂直半导体光放大器，其包括夹在半导体材料的p层和n层之间的本征体半导体材料的有源区，其中形成预定的限定横截面构造的垂直增益沟道以构成 光放大器的放大区域。 当光放大器“ON”时，放大区夹在线性梯度半导体材料的p型和n型掺杂层之间，向有源区提供空穴和电子。 几个因素有助于在相对较低的注入电流下实质地放大光学信号，其包括允许足够的单程增益的相对长的有源区以及垂直增益通道的严格限定的横截面配置，其减小了 放大区域在相对低的电流下导致基本上高的增益。 导带和价带分布的平坦化使得孔和电子容易接近有源区域。 本发明的无腔垂直半导体光放大器旨在用于高速通信的多维架构结构。

公开(公告)号：US20050030614A1

公开(公告)日：2005-02-10

申请号：US10767651

申请日：2004-01-29

Applicant: Simarjeet Saini ,  Peter Heim ,  Scott Merritt ,  Mario Dagenais

Inventor： Simarjeet Saini ,  Peter Heim ,  Scott Merritt ,  Mario Dagenais

IPC: H01S3/00 ,  H01S5/223 ,  H01S5/32 ,  H01S5/50

CPC classification number: H01S5/5009 ,  H01S5/2231 ,  H01S5/3211

Abstract: A semiconductor optical amplifier (SOA) has an overall gain that is substantially polarization independent, i.e., less than 1 dB difference between transverse electric (TE) and transverse magnetic (TM) gain. The SOA includes a residual cladding layer having different thicknesses over different portions of the gain section. Over a first portion of the gain section, the residual cladding layer is thinner than over a second portion of the gain section. This results in the first portion providing more gain to optical energy having a TE polarization state than optical energy having a TM polarization state. In the second portion of the gain section, however, more gain is provided to optical energy having a TM polarization state than energy having a TE polarization state. The resulting gain differences can be designed to offset one another so that the output has a gain that is substantially polarization independent.

Abstract translation: 半导体光放大器（SOA）具有基本上偏振无关的总体增益，即横向电（TE）和横向磁（TM）增益之间的差小于1dB。 SOA包括在增益部分的不同部分上具有不同厚度的残余覆层。 在增益部分的第一部分上，残余包层比增益部分的第二部分薄。 这导致第一部分比具有TM偏振状态的光能提供具有TE极化状态的光能的更多增益。 然而，在增益部分的第二部分中，对具有TM极化状态的光能比具有TE极化状态的能量提供更多的增益。 所产生的增益差异可被设计为彼此偏移，使得输出具有基本上与偏振无关的增益。

公开(公告)号：US5354575A

公开(公告)日：1994-10-11

申请号：US47840

申请日：1993-04-16

Applicant: Mario Dagenais ,  I-Fan Wu

Inventor： Mario Dagenais ,  I-Fan Wu

IPC: C23C14/54 ,  C23C16/52 ,  G01N21/21 ,  H01L33/44 ,  B05D3/06 ,  B05D5/06 ,  C23C14/00 ,  C23C16/00

CPC classification number: H01L33/44 ,  C23C14/547 ,  C23C16/52 ,  G01N21/211

Abstract: The invention describes a real-time in situ ellipsometric monitoring and control system using an ellipsometer to control the averaged refractive index of the deposited film during the AR coating of semiconductor laser diode facets for laser amplifiers and superluminescent LED. The input and output window birefringences are taken into account and calibrated the windows mounted on the vacuum chamber to include the effects of the pressure and mounting stress. In addition to the conventional four-medium model which gives an averaged refractive index, an adaptive multilayer model which takes into account an increasing number of layers as the evaporation proceeded is developed to monitor the instantaneous changes of the refractive index. Each ellipsometric measurement lasts only 0.5s and provides two sets of refractive index and thickness data as derived by the two multilayer models. Both measured data are used for the refractive index control to achieve a good feedback response. This fast and sensitive measurement technique makes possible the feedback control of the refractive index in real time which in turn allows for better control of the deposition condition and also improves the reproducibility of the AR coating process. By combining the two measured refractive indices and using the weighted average as the control factor, precise control of the average refractive index within .+-.0.01 can be achieved and traveling-wave semiconductor laser amplifiers and superluminescent LEDs with facet reflectivities of order 10.sup.--5 or less are obtained reproducibly for a single layer coating. Multilayer AR coatings can also be fabricated by using the invention technique with different combination of materials. The coatings can further be fine tuned by using wet etching or an ion gun mounted in the same deposition chamber for film thinning.

Abstract translation: 本发明描述了一种使用椭圆偏振仪的实时原位椭偏监测和控制系统，用于在激光放大器和超发光LED的半导体激光二极管面的AR涂层期间控制沉积膜的平均折射率。 考虑输入和输出窗口双折射，并校准安装在真空室上的窗口，以包括压力和安装应力的影响。 除了提供平均折射率的常规四介质模型之外，开发了考虑随着蒸发进行而增加层数的自适应多层模型以监测折射率的瞬时变化。 每个椭偏测量仅持续0.5秒，并提供由两个多层模型导出的两组折射率和厚度数据。 两个测量数据都用于折射率控制以实现良好的反馈响应。 这种快速和灵敏的测量技术使得可以实时地反馈控制折射率，这又允许更好地控制沉积条件，并且还提高了AR涂覆过程的再现性。 通过组合两个测量的折射率并使用加权平均值作为控制因子，可以实现+/- 0.01内平均折射率的精确控制，并且行波半导体激光放大器和超发光LED的面反射率为10-5 或更低的重复获得单层涂层。 也可以通过使用不同材料组合的本发明技术来制造多层AR涂层。 通过使用湿式蚀刻或安装在相同沉积室中的离子枪进行膜薄化，可以进一步微调涂层。

公开(公告)号：US08052908B2

公开(公告)日：2011-11-08

申请号：US12114373

申请日：2008-05-02

Applicant: Martin C. Peckerar ,  Mario Dagenais ,  Birendra Dutt ,  John D. Barry ,  Michael D. Messina, Jr. ,  Yves Ngu

Inventor： Martin C. Peckerar ,  Mario Dagenais ,  Birendra Dutt ,  John D. Barry ,  Michael D. Messina, Jr. ,  Yves Ngu

IPC: B29C33/40

CPC classification number: G03F7/70433 ,  G03F1/50 ,  G03F1/54

Abstract: A nanophotolithography mask includes a layer of an electrically conductive optically opaque material deposited on a mask substrate in which regular arrays of sub-wavelength apertures are formed. The plasmonic excitation in the layer perforated with the sub-wavelength apertures arrays under the light incident on the mask produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer when propagated to the same. The fill-factor of the mask, i.e., the ratio of the total apertures area to the total mask area, may lead to a significant increase in mask manufacturing throughput by FIB or electron beam “writing”. The mask demonstrates the defect resiliency and ability to imprint coherent clear features of nano dimensions and shapes on the wafers for integrated circuits design.

Abstract translation: 纳米光刻掩模包括沉积在其上形成有规则的亚波长孔径阵列的掩模基板上的导电光学不透明材料层。 在入射到掩模上的光下，在亚波长孔径阵列穿孔的层中的等离子体激发产生足够强度的高分辨率远场辐射图，以在传播到晶片上时暴露光致抗蚀剂。 掩模的填充因子，即总孔面积与总掩模面积的比率可能导致通过FIB或电子束“写入”的掩模制造通过量的显着增加。 该面具证明了在集成电路设计的晶圆上印刷纳米尺寸和形状的相干清晰特征的缺陷弹性和能力。

公开(公告)号：US06314117B1

公开(公告)日：2001-11-06

申请号：US09461183

申请日：1999-12-14

Applicant: Peter John Schultz Heim ,  Gregg Switzer ,  Mario Dagenais

Inventor： Peter John Schultz Heim ,  Gregg Switzer ,  Mario Dagenais

IPC: H01S500

CPC classification number: H01S5/02296 ,  H01L2224/48091 ,  H01S5/02212 ,  H01S5/02252 ,  H01S5/101 ,  H01S5/1085 ,  H01S5/141 ,  H01L2924/00014

Abstract: The output optical beam from an angled-facet semiconductor laser diode is made to propagate parallel to the optical axis of the laser package with low optical back-reflection. In this way, the angled-facet devices are made compatible with conventional semiconductor laser packages enabling them to be economically incorporated in a wide-range of external semiconductor lasers and amplified spontaneous emission sources. The parallel beam is achieved by tilting the laser diode with respect to the front and back surfaces of the package.

Abstract translation: 来自角度小平面半导体激光二极管的输出光束被制成平行于具有低光学背反射的激光器封装的光轴传播。 以这种方式，角度小平面装置与传统的半导体激光器封装兼容，使得它们能够经济地并入宽范围的外部半导体激光器和放大的自发发射源。 通过使激光二极管相对于封装的前表面和后表面倾斜来实现平行光束。

公开(公告)号：US6027957A

公开(公告)日：2000-02-22

申请号：US673222

申请日：1996-06-27

Applicant: Scott Andrew Merritt ,  Peter John Schultz Heim ,  Mario Dagenais

Inventor： Scott Andrew Merritt ,  Peter John Schultz Heim ,  Mario Dagenais

IPC: H01L23/482 ,  H01L23/488

CPC classification number: H01L23/4827 ,  H01L2924/0002 ,  H01L2924/3011

Abstract: A method and a resulting device for mounting a semiconductor to a submount by depositing a first layer of a first metal solder having a selected first melting point and corresponding thickness onto a surface of the semiconductor. Depositing a second layer of a second metal solder having a selected second melting point higher than the first melting point and a corresponding selected thickness onto a surface of the submount. Disposing the semiconductor surface and submount surface in confronting intimate contact and heating the submount and semiconductor to a temperature greater than the first temperature and lower that the second temperature for initiating and promoting liquid interdiffusion between the first and second solders.

Abstract translation: 一种用于通过将具有选定的第一熔点和相应厚度的第一金属焊料的第一层沉积到半导体的表面上而将半导体安装到基座的方法和所得到的装置。 将具有高于第一熔点的选定的第二熔点和相应的所选厚度的第二金属焊料的第二层沉积到所述基座的表面上。 将半导体表面和底座表面布置成面对紧密接触并将基座和半导体加热到大于第一温度的温度，并降低第二温度以引发和促进第一和第二焊料之间的液体相互扩散。

公开(公告)号：US5022741A

公开(公告)日：1991-06-11

申请号：US796834

申请日：1985-11-12

Applicant: Mario Dagenais ,  Wayne F. Sharfin

Inventor： Mario Dagenais ,  Wayne F. Sharfin

IPC: G02F3/02

CPC classification number: G02F3/024

Abstract: The I.sub.2 bound exciton in cadmium sulfide (bound to a neutral donor) is a very efficient radiator, providing low switching energy and fast switching times for an ON and OFF optical bistable device, desirable for all-optical signal processing applications. The optical bistable device for light at a given wavelength includes a Fabry-Perot cavity having a pair of opposed mirrored surfaces. A direct bandgap semiconductor, such as CuCl, CdSe, CdS, and GaAs having a bound exciton, is located within the cavity. The cavity is tuned near resonance of the light. The bound exciton has a coefficient of absorption tuned near resonance. A light beam of varying intensity is applied from without the cavity to one of the surfaces. The semiconductor has both an index of refraction and a coefficient of absorption that vary with the magnitude of applied light. Thus, light applied thereto passes through the device either substantially unimpeded or impeded, dependent upon its magnitude.

Abstract translation: 硫化镉中的I2键合激子（与中性供体结合）是非常有效的辐射器，为ON和OFF光学双稳态器件提供低开关能量和快速切换时间，对于全光信号处理应用是理想的。 用于在给定波长的光的光学双稳态器件包括具有一对相对的镜像表面的法布里 - 珀罗腔。 具有结合的激子的直接带隙半导体，例如CuCl，CdSe，CdS和GaAs位于腔内。 空腔被调谐在光的共振附近。 结合的激子具有在谐振附近调谐的吸收系数。 从没有空腔的一个表面施加不同强度的光束。 半导体具有随施加的光的大小而变化的折射率和吸收系数。 因此，根据其大小，施加到其上的光基本上不受阻碍或阻碍地穿过该装置。

公开(公告)号：US08655565B2

公开(公告)日：2014-02-18

申请号：US13295254

申请日：2011-11-14

Applicant: Mario Dagenais ,  Daniel Mercier

Inventor： Mario Dagenais ,  Daniel Mercier

IPC: G06F19/00 ,  B60T7/12 ,  B60K28/16

CPC classification number: B60G17/0157 ,  B60G2400/1042 ,  B60G2800/94 ,  B60T8/1706 ,  B60T8/1755 ,  B60T2240/06 ,  B62K5/027 ,  B62K5/05 ,  B62K5/08

Abstract: A method for enhancing stability of a three wheel vehicle having a pair of front wheels and a single rear wheel, each of the wheels having a tire with a tire grip threshold. The method including deploying an electronic stability system (ESS) on the vehicle, providing the ESS with input from various vehicle sensors related to the longitudinal and lateral acceleration of the vehicle, causing the ESS to determine whether (i) a precursory condition indicative of a wheel lift exists and (ii) the tire grip threshold of any of the tires has been exceeded; and when a precursory condition indicative of a wheel lift exists and the tire grip threshold of none of the tires has been exceeded, causing the ESS to reduce the longitudinal acceleration of the vehicle by a first amount less than that which would cause the tire grip threshold of any of the tires to be exceeded.

Abstract translation: 一种用于增强具有一对前轮和单个后轮的三轮车的稳定性的方法，每个车轮具有轮胎夹紧阈值的轮胎。 该方法包括在车辆上部署电子稳定系统（ESS），为ESS提供与车辆的纵向和横向加速度相关的各种车辆传感器的输入，使ESS确定（i）是否指示 存在轮升降机，并且（ii）已经超过了任何一个轮胎的轮胎夹紧阈值; 并且当存在指示车轮升降的前兆条件并且没有超过轮胎的轮胎夹紧阈值时，使得ESS将车辆的纵向加速度减小到小于将导致轮胎抓地力阈值的第一量 超过任何一个轮胎。

公开(公告)号：US07929202B2

公开(公告)日：2011-04-19

申请号：US12103088

申请日：2008-04-15

Applicant: Simarjeet S. Saini ,  Jerry L. Bowser ,  Vincent K. Luciani ,  Peter J. S. Heim ,  Mario Dagenais ,  Ryan Enck

Inventor： Simarjeet S. Saini ,  Jerry L. Bowser ,  Vincent K. Luciani ,  Peter J. S. Heim ,  Mario Dagenais ,  Ryan Enck

IPC: H01S5/00 ,  H04B10/12

CPC classification number: H01S5/0425 ,  H01S5/22 ,  H01S5/50 ,  H01S2301/04

Abstract: A semiconductor optical amplifier (SOA) with efficient current injection is described. Injection current density is controlled to be higher in some areas and lower in others to provide, e.g., improved saturation power and/or noise figure. Controlled injection current can be accomplished by varying the resistivity of the current injection electrode. This, in turn, can be accomplished by patterning openings in the dielectric layer above the current injection metallization in a manner which varies the series resistance along the length of the device.

Abstract translation: 描述了一种具有高效电流注入的半导体光放大器（SOA）。 注入电流密度在一些区域被控制得更高，而另一些区域的注入电流密度更低，以提供例如改善的饱和功率和/或噪声系数。 控制注入电流可以通过改变电流注入电极的电阻率来实现。 这又可以通过以沿设备长度改变串联电阻的方式在电流注入金属化之上的电介质层中图案化开口来实现。