Universal vacuum chamber including equipment modules such as a plasma
generating source, vacuum pumping arrangement and/or cantilevered
substrate support
    31.
    发明授权
    Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support 失效
    通用真空室包括诸如等离子体发生源,真空泵装置和/或悬臂衬底支架的设备模块

    公开(公告)号:US5820723A

    公开(公告)日:1998-10-13

    申请号:US658261

    申请日:1996-06-05

    CPC classification number: H01L21/67748 H01J37/16 H01J37/321 H01J37/32458

    Abstract: A vacuum processing chamber having a substrate support removably mounted therein. The chamber includes an opening in a sidewall thereof and the opening is large enough to allow the substrate support to be removed from the chamber through the opening. A modular mounting arrangement extends through the opening and removably supports the substrate support in the interior of the chamber at a position located inwardly of an inner sidewall of the chamber. The mounting arrangement includes a mounting flange and a support arm. The mounting flange is attached to an exterior surface of the chamber and the support arm extends between the substrate support and the mounting flange. The chamber includes a single vacuum port in a central portion of an endwall of the chamber spaced from the substrate support. The vacuum port is connected to a vacuum pump which removes gases from the interior of the chamber and maintains the chamber at a pressure below atmospheric pressure. The substrate support is easy to service or replace since it can be removed through a sidewall of the chamber. The sidewall mounted substrate support also allows a large vacuum port to be located in the endwall of the chamber thus allowing high flow to be achieved by connecting the vacuum port a large capacity vacuum pump. The chamber also includes a modular liner, a modular plasma generating source and a modular vacuum pumping arrangement, each of which can be replaced with interchangeable equipment.

    Abstract translation: 真空处理室,其具有可移除地安装在其中的基板支撑件。 腔室包括在其侧壁中的开口,并且开口足够大以允许衬底支撑件通过开口从腔室移除。 模块化安装布置延伸穿过开口并且可移动地将腔室内部的基板支撑件支撑在位于腔室内侧壁的内侧的位置。 安装装置包括安装凸缘和支撑臂。 安装凸缘连接到室的外表面,并且支撑臂在基板支撑件和安装凸缘之间延伸。 腔室包括在与衬底支撑件间隔开的腔室的端壁的中心部分中的单个真空端口。 真空端口连接到真空泵,真空泵从腔室内部除去气体,并将室保持在低于大气压的压力下。 衬底支撑件易于维修或更换,因为它可以通过腔室的侧壁去除。 侧壁安装的基板支撑件还允许大的真空端口位于室的端壁中,从而允许通过将真空端口连接到大容量真空泵来实现高流量。 该室还包括模块化衬垫,模块式等离子体发生源和模块化真空泵送装置,其中每一个都可以用可更换的设备来代替。

    Distributed power arrangements for localizing power delivery
    33.
    发明授权
    Distributed power arrangements for localizing power delivery 有权
    用于本地化电力输送的分布式电源布置

    公开(公告)号:US09105449B2

    公开(公告)日:2015-08-11

    申请号:US12145389

    申请日:2008-06-24

    Applicant: Neil Benjamin

    Inventor: Neil Benjamin

    CPC classification number: H01J37/32045 H01J37/32174 Y10T307/258

    Abstract: A distributed power arrangement to provide local power delivery in a plasma processing system during substrate processing is provided. The distributed power arrangement includes a set of direct current (DC) power supply units. The distributed power arrangement also includes a plurality of power generators, which is configured to receive power from the set of DC power supply units. Each power generator of the plurality of power generators is coupled to a set of electrical elements, thereby enabling the each power generator of the plurality of power generators to control the local power delivery.

    Abstract translation: 提供了一种用于在衬底处理期间在等离子体处理系统中提供局部电力输送的分布式电力装置。 分布式电源装置包括一组直流(DC)电源单元。 分布式电力布置还包括多个发电机,其被配置为从所述一组直流电源单元接收电力。 多个发电机的每个发电机耦合到一组电气元件,从而使多个发电机中的每个发电机能够控制局部电力输送。

    Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
    34.
    发明授权
    Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support 有权
    控制工件支撑体表面空间温度分布的方法和装置

    公开(公告)号:US08536494B2

    公开(公告)日:2013-09-17

    申请号:US11001219

    申请日:2004-11-30

    CPC classification number: H01J37/20 H01J2237/2001 H01L21/67103 H01L21/67248

    Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently.

    Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座,绝热体,平坦的支架和加热器。 温度控制的基座的温度低于工件所需的温度。 热绝缘体设置在温度控制的基座上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或设置在平坦支撑件的下侧上。 加热器包括多个加热元件,其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。

    Plasma processor coil
    35.
    发明授权
    Plasma processor coil 有权
    等离子处理器线圈

    公开(公告)号:US07571697B2

    公开(公告)日:2009-08-11

    申请号:US10242795

    申请日:2002-09-13

    CPC classification number: H05H1/46 H01J37/321

    Abstract: A plasma processor coil can include a shorting turn ohmically or only reactively coupled to plural multi-turn, co-planar, interleaved spiral, parallel connected windings. A separate capacitor can be associated with each winding to shunt current from one portion of that winding to another portion of the winding. The spacing between adjacent turns of peripheral portions of each winding can differ from the spacing between adjacent turns of interior portions of each winding. The coil can have a length that is short relative to the wavelength of RF excitation for the coil.

    Abstract translation: 等离子体处理器线圈可以包括欧姆地或仅反应地耦合到多个多匝,共面,交错的螺旋,并联的绕组的短路匝。 单独的电容器可以与每个绕组相关联以将电流从该绕组的一部分分流到绕组的另一部分。 每个绕组的周边部分的相邻匝之间的间隔可以不同于每个绕组的内部部分的相邻匝间的间隔。 线圈可以具有相对于线圈的RF激励波长短的长度。

    Temperature sensing system for temperature measurement in a high radio frequency environment
    36.
    发明授权
    Temperature sensing system for temperature measurement in a high radio frequency environment 有权
    用于高频无线电频率环境温度测量的温度传感系统

    公开(公告)号:US07080941B1

    公开(公告)日:2006-07-25

    申请号:US10294239

    申请日:2002-11-13

    CPC classification number: G01K1/08

    Abstract: A temperature sensing system incorporates a contact temperature sensor probe for measuring the temperature of articles. The probe is able to operate effectively even in high radio frequency environments such as those present within radio frequency excited plasma processing chambers. The temperature sensing system includes a contact temperature sensor, such as a thermocouple, surrounded by a shielding sheath of a material such as aluminum which is clad with one or more layers of a cladding material. A tip insulator is provided surrounding the sheath for providing RF insulation and thermal coupling. An RF insulating and thermal insulating mounting member is connected to the tip insulator for mounting the probe on an article to be measured.

    Abstract translation: 温度感测系统包含用于测量物品温度的接触式温度传感器探头。 即使在射频激发等离子体处理室中存在的高频无线电频率环境中,探头也能够有效地工作。 温度感测系统包括接触温度传感器,例如热电偶,由诸如铝的材料的屏蔽护套包围,该覆盖层包覆有一层或多层包层材料。 提供围绕护套的尖端绝缘体,用于提供RF绝缘和热耦合。 RF绝缘和绝热安装构件连接到尖端绝缘体,用于将探针安装在待测物品上。

    Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
    37.
    发明申请
    Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support 有权
    控制工件支撑体表面空间温度分布的方法和装置

    公开(公告)号:US20050173404A1

    公开(公告)日:2005-08-11

    申请号:US11001219

    申请日:2004-11-30

    CPC classification number: H01J37/20 H01J2237/2001 H01L21/67103 H01L21/67248

    Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently.

    Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座,绝热体,平坦的支架和加热器。 温度控制的基座的温度低于工件所需的温度。 热绝缘体设置在温度控制的基座上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或设置在平坦支撑件的下侧上。 加热器包括多个加热元件,其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。

    Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
    38.
    发明申请
    Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support 有权
    控制工件支撑体表面空间温度分布的方法和装置

    公开(公告)号:US20050173403A1

    公开(公告)日:2005-08-11

    申请号:US11001218

    申请日:2004-11-30

    CPC classification number: H01J37/20 H01J2237/2001 H01L21/67103 H01L21/67248

    Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temperature-controlled base. The flat-support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently.

    Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座,绝热体,平坦的支架和加热器。 温度控制的基座的温度低于工件所需的温度。 热绝缘体设置在温度控制的基座上。 平坦支撑件保持工件并设置在绝热体上。 加热器嵌入在平坦支撑件内和/或设置在平坦支撑件的下侧上。 加热器包括多个加热元件,其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。

    Apparatus for controlling the voltage applied to an electrostatic shield used in a plasma generator
    39.
    发明授权
    Apparatus for controlling the voltage applied to an electrostatic shield used in a plasma generator 有权
    用于控制施加到等离子体发生器中使用的静电屏蔽的电压的装置

    公开(公告)号:US06592710B1

    公开(公告)日:2003-07-15

    申请号:US09834523

    申请日:2001-04-12

    CPC classification number: H01J37/321 H01J37/32697 H01J37/32935 H01J37/3299

    Abstract: An apparatus for controlling the voltage applied to a shield interposed between an induction coil powered by a power supply via a matching network, and the plasma it generates, comprises a shield, a first feedback circuit, and a second feedback circuit. The power supply powers the shield. The first feedback circuit is connected to the induction coil for controlling the power supply. The second feedback circuit is connected to the shield for controlling the voltage of the shield. Both first and second feedback circuits operate at different frequency ranges. The first feedback circuit further comprises a first controller and a first sensor. The first sensor sends a first signal representing the power supplied to the inductive coil to the first controller. The first controller adjusts the power supply such that the power supplied to the inductor coil is controlled by a first set point. The second feedback circuit further comprises a second sensor, a second controller, and a variable impedance network. The shield is powered via a variable impedance network. The second sensor sends a second signal representative of the voltage of the shield to the second controller. The second controller adjusts the variable impedance network such that the voltage of the shield is controlled by a second set point.

    Abstract translation: 用于控制施加到由经由匹配网络供电的感应线圈之间的屏蔽的电压及其产生的等离子体的装置包括屏蔽,第一反馈电路和第二反馈电路。 电源为屏蔽提供电源。 第一反馈电路连接到用于控制电源的感应线圈。 第二反馈电路连接到屏蔽以控制屏蔽电压。 第一和第二反馈电路都以不同的频率范围工作。 第一反馈电路还包括第一控制器和第一传感器。 第一传感器将表示提供给感应线圈的功率的第一信号发送到第一控制器。 第一控制器调节电源,使得提供给电感线圈的功率由第一设定点控制。 第二反馈电路还包括第二传感器,第二控制器和可变阻抗网络。 屏蔽通过可变阻抗网络供电。 第二传感器将表示屏蔽电压的第二信号发送到第二控制器。 第二控制器调整可变阻抗网络,使得屏蔽的电压由第二设定点控制。

    Scalable helicon wave plasma processing device with a non-cylindrical
source chamber having a serpentine antenna
    40.
    发明授权
    Scalable helicon wave plasma processing device with a non-cylindrical source chamber having a serpentine antenna 失效
    可扩展的螺旋波等离子体处理装置,其具有带蛇形天线的非圆柱形源室

    公开(公告)号:US6087778A

    公开(公告)日:2000-07-11

    申请号:US981252

    申请日:1998-05-11

    CPC classification number: H01J37/3211 H01J37/321

    Abstract: A plasma processing device (25) including a vacuum chamber (27) for processing a substrate (29) and a source chamber (26) for generating a plasma is disclosed where the source chamber (26) has a non-cylindrical geometry. Helicon waves of plasma are propagated from the source chamber into the vacuum chamber by a magnetic field having substantially parallel magnetic field lines extending from the source chamber into the vacuum chamber. A RF antenna (31 and 32) of a novel serpentine configuration is used to couple electromagnetic energy into the source chamber to create helicon plasma waves in the source chamber (26). The non-cylindrical geometry of the source chamber allows the processing of large area substrates due to the ability to scale the source chamber to the desired application while maintaining throughput efficiency and the ability to propagate helicon waves along the magnetic field lines present in the source chamber. In one embodiment a linear source chamber having the shape of an elongated rectangular box is disclosed wherein a slot opening (28) connects the source chamber to the vacuum chamber. Due to the ability of the helicon waves from a linear source chamber to propagate in a vacuum chamber without interference from a helicon wave from a similar source chamber, a plasma processing device is disclosed wherein multiple extended non-cylindrical source chambers are arranged to propagate nonparallel helicon plasma waves in a vacuum chamber.

    Abstract translation: PCT No.PCT / US96 / 11157 Sec。 371日期:1998年5月11日 102(e)1998年5月11日PCT PCT 1996年6月28日PCT公布。 出版物WO97 / 01655 日本1997年1月16日公开了一种等离子体处理装置(25),其包括用于处理基板(29)的真空室(27)和用于产生等离子体的源室(26),其中源室(26) 圆柱几何。 等离子体的螺旋波通过具有从源室延伸到真空室中的基本平行的磁场线的磁场从源室传播到真空室中。 使用新型蛇形结构的RF天线(31和32)将电磁能耦合到源室中,以在源室(26)中产生螺旋形等离子体波。 源室的非圆柱形几何形状允许处理大面积基板,这是由于能够将源室缩放到期望的应用,同时保持生产效率和沿存在于源室中的磁场线传播螺旋形波的能力 。 在一个实施例中,公开了具有细长矩形盒的形状的线性源室,其中槽开口(28)将源室连接到真空室。 由于来自线性源室的Helicon波在真空室中传播而不受来自类似源室的螺旋波的干扰的能力,公开了一种等离子体处理装置,其中多个扩展的非圆柱形源室布置成传播非平行 螺旋等离子体波在真空室中。

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