公开(公告)号：US20250098516A1

公开(公告)日：2025-03-20

申请号：US18967253

申请日：2024-12-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideko INOUE ,  Tomoya YAMAGUCHI ,  Hiromi SEO ,  Satoshi SEO ,  Kunihiko SUZUKI ,  Miki KANAMOTO

IPC: H10K85/30 ,  C07F15/00 ,  C09K11/02 ,  C09K11/06 ,  H05B33/10 ,  H10K50/11 ,  H10K85/60 ,  H10K101/10

Abstract: As a novel substance having a novel skeleton, an organometallic complex with high emission efficiency which achieves improved color purity by a reduction of half width of an emission spectrum is provided. One embodiment of the present invention is an organometallic complex in which a β-diketone and a six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom are ligands. In General Formula (G1), X represents a substituted or unsubstituted six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom. Further, R1 to R4 each represent a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms.

公开(公告)号：US20250098429A1

公开(公告)日：2025-03-20

申请号：US18724014

申请日：2022-12-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuichi YANAGISAWA ,  Ryota HODO ,  Hiromi SAWAI ,  Yasunori SASAMURA

IPC: H10K59/122 ,  H10K59/38

Abstract: A high-resolution display device is provided. The display device includes a first light-emitting device, a second light-emitting device, a first insulating layer, a second insulating layer, a first coloring layer, and a second coloring layer. The first light-emitting device includes a first pixel electrode, a first layer, and a common electrode in this order over the first insulating layer. The second light-emitting device includes a second pixel electrode, a second layer, and the common electrode in this order over the first insulating layer. The first insulating layer includes a groove including a region overlapping with the first pixel electrode and a region overlapping with the second pixel electrode. The second insulating layer overlaps with a side surface of the first layer, a side surface of the second layer, and the groove. The common electrode includes a portion positioned over the second insulating layer. The first coloring layer overlaps with the first light-emitting device. The second coloring layer overlaps with the second light-emitting device. The second coloring layer and the first coloring layer transmit light of different colors. The first layer and the second layer contain the same light-emitting material and are apart from each other.

公开(公告)号：US20250098315A1

公开(公告)日：2025-03-20

申请号：US18897319

申请日：2024-09-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE

IPC: H01L27/12 ,  G09G3/3233 ,  G09G3/3275 ,  H01L27/06 ,  H01L33/62 ,  H10K59/10

Abstract: An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.

公开(公告)号：US12256597B2

公开(公告)日：2025-03-18

申请号：US18533282

申请日：2023-12-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Daiki Nakamura ,  Ryo Hatsumi ,  Rai Sato ,  Shingo Eguchi ,  Koji Kusunoki

IPC: H10K50/858 ,  G02B1/11 ,  G02B3/00 ,  G02B27/09 ,  G06F3/0354 ,  G06F3/041 ,  G06F3/042 ,  G06F3/147 ,  G06F3/16 ,  G09F9/30 ,  G09G3/30 ,  G09G3/3225 ,  H05B33/02 ,  H10K50/00 ,  H10K59/00 ,  H10K59/12 ,  H10K59/131 ,  H10K59/60 ,  H10K59/80

Abstract: A novel functional panel that is highly convenient, useful, or reliable is provided. The functional panel includes a base material and a pair of pixels, and the base material covers the pair of pixels and has a light-transmitting property. The pair of pixels includes one pixel and another pixel, and the one pixel includes a light-emitting device and a first microlens. The light-emitting device emits light toward the base material, and the first microlens is interposed between the base material and the light emission and converges light. The first microlens includes a first surface and a second surface; the second surface is closer to the light-emitting device than the first surface is; and the second surface has a smaller radius of curvature than the first surface. The other pixel includes a photoelectric conversion device and a second microlens. The second microlens is interposed between the base material and the photoelectric conversion and converges external light incident from the base material side. The second microlens includes a third surface and a fourth surface; the third surface is closer to the photoelectric conversion device than the fourth surface is; and the fourth surface has a smaller radius of curvature than the third surface.

公开(公告)号：US12252775B2

公开(公告)日：2025-03-18

申请号：US18633854

申请日：2024-04-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC: C23C14/34 ,  B28B11/24 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US20250089560A1

公开(公告)日：2025-03-13

申请号：US18897415

申请日：2024-09-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi SEO ,  Tsunenori Suzuki ,  Naoaki Hashimoto

IPC: H10K85/60 ,  H10K50/11 ,  H10K50/155 ,  H10K50/16 ,  H10K50/84 ,  H10K101/30 ,  H10K101/40

Abstract: Provided is a novel light-emitting element, a light-emitting element with a long lifetime, or a light-emitting element with high emission efficiency. The light-emitting element includes an EL layer between a pair of electrodes. The EL layer includes at least a light-emitting layer containing a fluorescent substance and a host material, a first electron-transport layer containing a first electron-transport material, and a second electron-transport layer containing a second electron-transport material, which are in contact with each other and in this order. The LUMO level of each of the host material and the second electron-transport material is higher than the LUMO level of the first electron-transport material.

公开(公告)号：US20250084302A1

公开(公告)日：2025-03-13

申请号：US18814801

申请日：2024-08-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Miyako MORIKUBO ,  Yuki HAYASHI ,  Tsunenori SUZUKI ,  Takashi SHINGU ,  Sachiko KAWAKAMI ,  Harue OSAKA ,  Satoshi SEO

IPC: C09K11/06 ,  C07D209/86 ,  H10K50/858

Abstract: An organic compound is represented by General Formula (G1). In the formula, each of R1 to R4 independently represents any of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by General Formula (G1-1). Each of R5 to R8 independently represents any of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by General Formula (G1-3). At least one of R5 to R8 represents a substituent represented by General Formula (G1-3).

公开(公告)号：US20250081840A1

公开(公告)日：2025-03-06

申请号：US18598245

申请日：2024-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takuya HARUYAMA ,  Satoshi SEO ,  Nobuharu OHSAWA

IPC: H10K85/60 ,  C07C211/61 ,  C09K11/02 ,  C09K11/06 ,  H10K50/11 ,  H10K50/12 ,  H10K50/842 ,  H10K50/858 ,  H10K59/131 ,  H10K59/35 ,  H10K59/38 ,  H10K101/10 ,  H10K102/00

Abstract: A novel compound is provided. The novel compound is represented by General Formula (G1). In General Formula (G1), A represents a substituted or unsubstituted condensed aromatic ring having 10 to 30 carbon atoms or a substituted or unsubstituted condensed heteroaromatic ring having 10 to 30 carbon atoms, and R1 represents a substituted or unsubstituted aryl group having 6 to 25 carbon atoms. Each of Y1 and Y2 independently represents a cycloalkyl group having a bridge structure and having 7 to 10 carbon atoms.

公开(公告)号：US20250081715A1

公开(公告)日：2025-03-06

申请号：US18892023

申请日：2024-09-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi SEO ,  Nobuharu OHSAWA

IPC: H10K50/11 ,  H10K85/30 ,  H10K85/60 ,  H10K101/00 ,  H10K101/10 ,  H10K101/30

Abstract: A light-emitting element containing a light-emitting material with high luminous efficiency is provided. The light-emitting element includes a host material and a guest material. The host material includes a first organic compound and a second organic compound. In the first organic compound, a difference between a singlet excitation energy level and a triplet excitation energy level is larger than 0 eV and smaller than or equal to 0.2 eV. The HOMO level of one of the first organic compound and the second organic compound is higher than or equal to that of the other organic compound, and the LUMO level of the one of the organic compounds is higher than or equal to that of the other organic compound. The first organic compound and the second organic compound form an exciplex.

公开(公告)号：US20250081629A1

公开(公告)日：2025-03-06

申请号：US18818925

申请日：2024-08-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota HODO ,  Shinya SASAGAWA ,  Motomu KURATA ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L21/02

Abstract: A semiconductor device that operates at high speed is provided. The semiconductor device is fabricated in the following manner: a first coating film over a first insulator and a second coating film over the first coating film are formed; a first layer is formed by partly removing the second coating film; a second layer is formed by partly removing the first coating film using the first layer as a mask; heat treatment is performed; a first oxide semiconductor is formed to cover a top surface of the first insulator, a side surface of the second layer, and a side surface and a top surface of the first layer; a second oxide semiconductor is formed in contact with the side surface of the second layer by processing the first oxide semiconductor by anisotropic etching; the first layer is removed; and a side surface of the second oxide semiconductor that is covered with the second layer is exposed by removing the second layer.