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    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12142658B2

    公开(公告)日：2024-11-12

    申请号：US17747063

    申请日：2022-05-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yasutaka Nakazawa ,  Kenichi Okazaki ,  Takayuki Ohide ,  Rai Sato

    IPC: H01L29/66 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  G02F1/1368 ,  H10K59/121

    Abstract: A semiconductor device is fabricated by a method including the following steps: a first step of forming a semiconductor film containing a metal oxide over an insulating layer; a second step of forming a conductive film over the semiconductor film; a third step of forming a first resist mask over the conductive film and etching the conductive film to form a first conductive layer and to expose a top surface of the semiconductor film that is not covered with the first conductive layer; and a fourth step of forming a second resist mask that covers a top surface and a side surface of the first conductive layer and part of the top surface of the semiconductor film and etching the semiconductor film to form a semiconductor layer and to expose a top surface of the insulating layer that is not covered with the semiconductor layer.

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11894466B2

    公开(公告)日：2024-02-06

    申请号：US17279153

    申请日：2019-09-27

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Rai Sato ,  Masami Jintyou ,  Masayoshi Dobashi ,  Takashi Shiraishi ,  Satoru Saito ,  Yasutaka Nakazawa

    IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L27/12 ,  H01L29/49

    CPC classification number: H01L29/78621 ,  H01L29/42384 ,  H01L29/66969 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/7869 ,  H01L2029/42388

    Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, a metal oxide layer, and a conductive layer; the first insulating layer, the metal oxide layer, and the conductive layer are stacked in this order over the semiconductor layer; an end portion of the first insulating layer is located inward from an end portion of the semiconductor layer; an end portion of the metal oxide layer is located inward from the end portion of the first insulating layer; and an end portion of the conductive layer is located inward from the end portion of the metal oxide layer. The second insulating layer is preferably provided to cover the semiconductor layer, the first insulating layer, the metal oxide layer, and the conductive layer. It is preferable that the semiconductor layer include a first region, a pair of second regions, and a pair of third regions; the first region overlap with the first insulating layer and the metal oxide layer; the second regions between which the first region is sandwiched overlap with the first insulating layer and not overlap with the metal oxide layer; the third regions between which the first region and the pair of second regions are sandwiched not overlap with the first insulating layer; and the third regions be in contact with the second insulating layer.

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11610998B2

    公开(公告)日：2023-03-21

    申请号：US17257364

    申请日：2019-06-26

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Rai Sato ,  Masami Jintyou ,  Masayoshi Dobashi ,  Takashi Shiraishi

    IPC: H01L27/00 ,  H01L29/00 ,  H01L51/00 ,  G02F1/1362 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

    Abstract: A transistor in which shape defects are unlikely to occur is provided. A transistor with favorable electrical characteristics is provided. A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a transistor. The transistor includes a semiconductor layer, a first insulating layer, a metal oxide layer, a functional layer, and a conductive layer. The first insulating layer is positioned over the semiconductor layer. The metal oxide layer is positioned over the first insulating layer. The functional layer is positioned over the metal oxide layer. The conductive layer is positioned over the functional layer. The semiconductor layer, the first insulating layer, the metal oxide layer, the functional layer, and the conductive layer have regions overlapping with each other. In the channel length direction of the transistor, end portions of the first insulating layer, the metal oxide layer, the functional layer, and the conductive layer are positioned inward from an end portion of the semiconductor layer. An etching rate of the functional layer with an etchant containing one or more of phosphoric acid, acetic acid, nitric acid, hydrochloric acid, and sulfuric acid is lower than an etching rate of the conductive layer.

    Semiconductor device and fabrication method thereof
    6.
    发明授权
    Semiconductor device and fabrication method thereof 有权

    公开(公告)号：US11349006B2

    公开(公告)日：2022-05-31

    申请号：US16966066

    申请日：2019-02-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yasutaka Nakazawa ,  Kenichi Okazaki ,  Takayuki Ohide ,  Rai Sato

    IPC: H01L27/00 ,  H01L29/00 ,  H01L29/45 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1368 ,  H01L27/32

    Abstract: A semiconductor device is fabricated by a method including the following steps: a first step of forming a semiconductor film containing a metal oxide over an insulating layer; a second step of forming a conductive film over the semiconductor film; a third step of forming a first resist mask over the conductive film and etching the conductive film to form a first conductive layer and to expose a top surface of the semiconductor film that is not covered with the first conductive layer; and a fourth step of forming a second resist mask that covers a top surface and a side surface of the first conductive layer and part of the top surface of the semiconductor film and etching the semiconductor film to form a semiconductor layer and to expose a top surface of the insulating layer that is not covered with the semiconductor layer.

    Display device, display module, and electronic device
    7.
    发明授权
    Display device, display module, and electronic device 有权

    公开(公告)号：US12048227B2

    公开(公告)日：2024-07-23

    申请号：US17428736

    申请日：2020-02-03

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Ryo Hatsumi ,  Taisuke Kamada ,  Daisuke Kubota ,  Rai Sato ,  Hiroki Adachi ,  Ryo Yamauchi ,  Kazunori Watanabe

    IPC: G06F3/042 ,  G09G3/30 ,  G09G3/3208 ,  H10K50/86 ,  H10K59/30 ,  H10K59/60

    CPC classification number: H10K59/60 ,  G09G3/30 ,  G09G3/3208 ,  H10K50/865 ,  H10K59/30 ,  G09G2360/142

    Abstract: A display device having a function of sensing light is provided. The display device includes a first substrate, a second substrate, a light-receiving element, a light-emitting element, a resin layer, and a light shielding layer. The light-receiving element, the light-emitting element, the resin layer, and the light shielding layer are each positioned between the first substrate and the second substrate. The light-receiving element includes a first pixel electrode over the first substrate, an active layer over the first pixel electrode, and a common electrode over the active layer. The light-emitting element includes a second pixel electrode over the first substrate, a first light-emitting layer over the second pixel electrode, and the common electrode over the first light-emitting layer. The resin layer and the light shielding layer are each positioned between the common electrode and the second substrate. The resin layer includes a portion overlapping with the light-emitting element. The light shielding layer includes a portion positioned between the common electrode and the resin layer. The resin layer includes a portion overlapping with the light-receiving element or is provided in an island shape. At least part of light passing through the second substrate enters the light-receiving element without through the resin layer.

    LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    液晶显示装置及其制造方法

    公开(公告)号：US20140024154A1

    公开(公告)日：2014-01-23

    申请号：US14038899

    申请日：2013-09-27

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yamato AIHARA ,  Masami Jintyou ,  Rai Sato ,  Toru Arakawa

    IPC: H01L27/12

    CPC classification number: H01L27/1262 ,  G02F1/133553 ,  G02F1/13725

    Abstract: In the liquid crystal display device in which a guest-host liquid crystal layer is provided between a first substrate having a reflective film which is a pixel electrode layer (also referred to as a first electrode layer) and a second substrate having a common electrode layer (also referred to as a second electrode layer), the reflective film which is a pixel electrode layer is projected into the liquid crystal layer, and a micron-sized first unevenness and a nano-sized second unevenness on the first unevenness are provided.

    Abstract translation: 在具有作为像素电极层（也称为第一电极层）的反射膜的第一基板和具有公共电极层的第二基板之间设置客体主体液晶层的液晶显示装置 （也称为第二电极层），作为像素电极层的反射膜投射到液晶层中，并且在第一凹凸上设置微米级的第一凹凸和纳米尺寸的第二凹凸。

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