公开(公告)号：US12057510B2

公开(公告)日：2024-08-06

申请号：US18212773

申请日：2023-06-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Motoki Nakashima ,  Tatsuya Honda

IPC: H01L29/786 ,  C01G19/00 ,  H01L29/04 ,  H01L29/26

CPC classification number: H01L29/7869 ,  C01G19/006 ,  H01L29/04 ,  H01L29/045 ,  H01L29/26 ,  H01L29/78696 ,  C01P2002/72

Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

公开(公告)号：US11658185B2

公开(公告)日：2023-05-23

申请号：US17198660

申请日：2021-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Motoki Nakashima ,  Haruyuki Baba

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  H01L29/66757 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696 ,  G02F1/1368 ,  G02F1/136222 ,  G02F2201/44

Abstract: A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.

公开(公告)号：US10889888B2

公开(公告)日：2021-01-12

申请号：US15189104

申请日：2016-06-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC: C23C14/08 ,  C23C14/34 ,  C23C14/54 ,  C04B35/01 ,  C04B35/453 ,  C04B35/64 ,  B28B11/24 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US09437428B2

公开(公告)日：2016-09-06

申请号：US14552064

申请日：2014-11-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Oota ,  Noritaka Ishihara ,  Motoki Nakashima ,  Yoichi Kurosawa ,  Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka

IPC: H01L21/02 ,  H01L49/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/127 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/425 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1255 ,  H01L28/20 ,  H01L28/60 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

Abstract translation: 提供一种制造包含具有导电性的氧化物半导体膜的半导体器件的方法，或者包括具有透光性和导电性的氧化物半导体膜的半导体器件的制造方法。 制造半导体器件的方法包括以下步骤：在第一绝缘膜上形成氧化物半导体膜，在氧化物半导体膜中包含的氧被释放的气氛中进行第一次热处理，并在含氢的 从而形成具有导电性的氧化物半导体膜。

公开(公告)号：US12119408B2

公开(公告)日：2024-10-15

申请号：US18243688

申请日：2023-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823475 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1233 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78672

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US12062724B2

公开(公告)日：2024-08-13

申请号：US18243691

申请日：2023-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823475 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1233 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78672

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US11959165B2

公开(公告)日：2024-04-16

申请号：US17228847

申请日：2021-04-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC: C23C14/34 ,  B28B11/24 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: C23C14/3414 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  C23C14/086 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US20210280697A1

公开(公告)日：2021-09-09

申请号：US17330589

申请日：2021-05-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Tomonori Nakayama ,  Motoki Nakashima

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L27/12 ,  H01L29/49 ,  H01L29/417

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

公开(公告)号：US11066739B2

公开(公告)日：2021-07-20

申请号：US16285297

申请日：2019-02-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  C23C14/34 ,  B28B11/24 ,  C04B35/64 ,  C04B35/453 ,  C23C14/08

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US10269979B2

公开(公告)日：2019-04-23

申请号：US15911681

申请日：2018-03-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Motoki Nakashima ,  Masahiro Takahashi

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/36 ,  H01L29/417

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film.