公开(公告)号：US08519419B2

公开(公告)日：2013-08-27

申请号：US13171472

申请日：2011-06-29

申请人： Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Chia-Hung Huang

发明人： Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Chia-Hung Huang

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/12 ,  H01L33/382 ,  H01L33/46

摘要： A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer.

摘要翻译： 半导体发光结构包括硅衬底，分布式布拉格反射器，半导体结构层和外延连接层。 硅衬底具有顶表面。 分布式布拉格反射器形成在硅衬底的顶表面上。 半导体结构层被配置为发光。 外延连接层放置在分布式布拉格反射器和半导体结构层之间。 沟槽从半导体结构层延伸穿过外延连接层和分布式布拉格反射器到达半导体结构层。

公开(公告)号：US08415179B2

公开(公告)日：2013-04-09

申请号：US13309611

申请日：2011-12-02

申请人： Tzu-Chien Hung ,  Shun-Kuei Yang ,  Chia-Hui Shen

发明人： Tzu-Chien Hung ,  Shun-Kuei Yang ,  Chia-Hui Shen

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/06 ,  H01L33/20

摘要： A light emitting diode and a light emitting diode (LED) manufacturing method are disclosed. The LED comprises a substrate; a first n-type GaN layer; a second n-type GaN layer; an active layer; and a p-type GaN layer formed on the substrate in sequence; the second n-type GaN layers has a bottom surface interfacing with the first n-type GaN layer, a rim of the bottom surface has a roughened exposed portion, and Ga—N bonds on the bottom surface has an N-face polarity.

摘要翻译： 公开了一种发光二极管和发光二极管（LED）制造方法。 LED包括基板; 第一n型GaN层; 第二n型GaN层; 活性层 和在该基板上依次形成的p型GaN层; 第二n型GaN层具有与第一n型GaN层接合的底面，底面的边缘具有粗糙化的露出部分，底面上的Ga-N键具有N面极性。

公开(公告)号：US20130032779A1

公开(公告)日：2013-02-07

申请号：US13457431

申请日：2012-04-26

申请人： Chia-Hung HUANG ,  Shih-Cheng Huang ,  Po-Min TU ,  Shun-Kuei YANG ,  Ya-Wen LIN

发明人： Chia-Hung HUANG ,  Shih-Cheng Huang ,  Po-Min TU ,  Shun-Kuei YANG ,  Ya-Wen LIN

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/46

CPC分类号： H01L33/007 ,  H01L21/76856 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/22

摘要： A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed.

摘要翻译： 发光二极管（LED）包括依次设置在基板上的基板，外延层和氮化铝（AlN）层。 AlN层包括彼此分离的多个叠层，其中外延层完全覆盖AlN层的多个叠层。 具有多个堆叠的AlN层通过LED的顶部平面反射向上反射由外延层产生的向上的光并且朝向衬底向下反射到LED的外部。 还公开了一种用于形成LED的方法。

公开(公告)号：US20120256162A1

公开(公告)日：2012-10-11

申请号：US13437937

申请日：2012-04-03

申请人： Chia-Hung HUANG ,  Po-Min TU ,  Shih-Cheng HUANG ,  Shun-Kuei YANG

发明人： Chia-Hung HUANG ,  Po-Min TU ,  Shih-Cheng HUANG ,  Shun-Kuei YANG

IPC分类号： H01L33/06

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A light emitting diode includes a substrate, an N-type semiconductor layer arranged on the substrate, an active layer, and a P-type semiconductor layer. The active layer includes a first barrier layer, a second barrier layer, and a quantum well structure layer arranged between the first and second barrier layers. The quantum well structure layer includes an InN layer, a GaN layer and an InGaN layer arranged on the first barrier layer in sequence. The InN layer has an upper surface connected to the GaN layer. The upper surface is rough. The InGaN layer has a concentration of In atoms in some regions of the InGaN layer which is higher that that in other regions thereof. The P-type semiconductor layer is arranged on the second barrier layer.

摘要翻译： 发光二极管包括衬底，布置在衬底上的N型半导体层，有源层和P型半导体层。 有源层包括第一阻挡层，第二阻挡层和布置在第一和第二阻挡层之间的量子阱结构层。 量子阱结构层依次包括布置在第一阻挡层上的InN层，GaN层和InGaN层。 InN层具有连接到GaN层的上表面。 上表面粗糙。 InGaN层在InGaN层的一些区域中的In原子浓度高于其他区域中的In原子浓度。 P型半导体层配置在第二阻挡层上。

公开(公告)号：US20120086032A1

公开(公告)日：2012-04-12

申请号：US13171472

申请日：2011-06-29

申请人： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

发明人： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC分类号： H01L33/60

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/12 ,  H01L33/382 ,  H01L33/46

摘要： A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer.

摘要翻译： 半导体发光结构包括硅衬底，分布式布拉格反射器，半导体结构层和外延连接层。 硅衬底具有顶表面。 分布式布拉格反射器形成在硅衬底的顶表面上。 半导体结构层被配置为发光。 外延连接层放置在分布式布拉格反射器和半导体结构层之间。 沟槽从半导体结构层延伸穿过外延连接层和分布式布拉格反射器到达半导体结构层。