Abstract:
The invention provides a flexible, highly pure expanded graphite sheet characterized by having an impurity content of 10 ppm or less and such a degree of flexibility that a sample thereof, 10null100 mm in size can withstand at least 10 times of bending in flexibility test comprising repeatedly bending the sample, with a 50-g weight suspended from one end thereof, by means of bending bodies with a diameter of 6 mm.
Abstract:
A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.
Abstract:
A heat resistant structure includes: a core formed of a plurality of C/C composite members; and a shell material covering at least a portion of a surface of the core and made of metal.
Abstract:
A supported platinum catalyst having a high ratio of a diffraction peak intensity of a Pt (220) plane and having excellent oxidation resistance, obtained by a simple production method without using a polymer. The supported platinum catalyst includes a carbon support and platinum fine particles supported on the carbon support, the platinum fine particles being such that a ratio of a diffraction peak intensity of a (220) plane with respect to a total of diffraction peak intensities of a (111) plane, a (200) plane, and the (220) plane by X-ray diffraction is not less than 0.128.
Abstract:
Provided is a susceptor which enables improvement in yield of semiconductor chips produced from wafers, has a long life, and hardly causes chipping. The susceptor includes pockets (2) in which wafers (10) are to be placed, wherein at least one of the pockets (2) includes a plurality of supporting portions (3) for supporting the wafer (10), a plurality of contact portions (4) to make contact with a lateral surface (10a) of the wafer (10), and a plurality of non-contact portions (5) spaced from the lateral surface (10a) of the wafer (10). The contact portions (4) and the non-contact portions (5) are alternately provided in the inner peripheral wall of the pocket (2), and at least two of the supporting portions (3) are provided on lines extending from a center (O) of the pocket (2) to the non-contact portions (5) when the susceptor is viewed from above.
Abstract:
A method of producing a porous carbon is provided that can change type of functional groups, amount of functional groups, or ratio of functional groups while inhibiting its pore structure from changing. A method of producing a porous carbon includes: a first step of carbonizing a material containing a carbon source and a template source, to prepare a carbonized product; and a second step of immersing the carbonized product into a template removing solution, to remove a template from the carbonized product, and the method is characterized by changing at least two or more of the following conditions: type of the material, ratio of the carbon source and the template source, size of the template, and type of the template removal solution, to thereby control type, amount, or ratio of functional groups that are present in the porous carbon.
Abstract:
[Problem] A microorganism immobilized carrier is provided that is easy for microorganisms to adhere to, and is able to reduce the manufacturing cost of the microorganism immobilized carrier and the running cost of an apparatus that uses the microorganism immobilized carrier. [Solution] A microorganism immobilized carrier is characterized by including a carbon component and a resin, having a zeta potential of from −25 mV to 0 mV, and containing microorganisms adhered to a surface thereof and/or an interior thereof. The microorganisms are preferably nitrifying bacteria. The carbon component preferably has a particle size of from 1 μm to 1000 μm.
Abstract:
The present invention improves the strength of the bottom (net) of the jig and makes it more difficult and unlikely for deviation of the mesh to occur.A workpiece is loaded on the net (2) of the heat treat furnace jig (hereinafter, heat treatment furnace jig). In the net (2), a first strand (10), a second strand (20) and a third strand (30) are in contact at a contact point (X1). Near the contact point (X1), the second strand (20) overlaps the first strand (10) from above and the third strand (30) overlaps the first strand (10) from below. As a result, the first strand (10) is held between the second strand (20) and the third strand (30) in the up/down directions.
Abstract:
Provided are a susceptor that, in forming a thin film on a wafer, can reduce impurities or the like adhering to the wafer and a method for manufacturing the same. A susceptor includes a base material (10) with a recess (11), a tantalum carbide layer (22) formed directly on a bottom surface (11a) and a side surface (11b) of the recess (11), and a silicon carbide layer (20) formed on a surface of the base material (10) except for the recess (11).
Abstract:
An object is to provide a graphite-copper composite electrode material that is capable of reducing electrode wear to a practically usable level and to provide an electrical discharge machining electrode using the material. A graphite-copper composite electrode material includes a substrate comprising a graphite material and having pores, and copper impregnated in the pores of the substrate, the electrode material having an electrical resistivity of 2.5 μΩm or less, preferably 1.5 μΩm or less, more preferably 1.0 μΩm or less. It is desirable that the substrate comprising the graphite material have an anisotropy ratio of 1.2 or less. It is desirable that an impregnation rate φ of the copper in the electrode material is 13% or greater. It is desirable that the substrate comprising the graphite material have a bulk density of from 1.40 Mg/m3 to 1.85 Mg/m3.