公开(公告)号：US20110186812A1

公开(公告)日：2011-08-04

申请号：US12941847

申请日：2010-11-08

申请人： Tae Yun KIM ,  Hyo Kun Son

发明人： Tae Yun KIM ,  Hyo Kun Son

IPC分类号： H01L33/06 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L33/32

摘要： Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.

摘要翻译： 提供一种半导体发光器件及其制造方法。 半导体发光层包括第一导电类型半导体层，第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层。 有源层包括量子阱层，量子势垒层和双阻挡层。

公开(公告)号：US07928454B2

公开(公告)日：2011-04-19

申请号：US12107256

申请日：2008-04-22

申请人： Tae Yun Kim

发明人： Tae Yun Kim

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/325 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/12 ,  H01L33/32

摘要： Disclosed are a light emitting device and a method for manufacturing the same. A light emitting diode comprises a plurality of Un-GaN layers and a plurality of N-type semiconductor layers, an active layer on the N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein at least two of the Un-GaN layers and at least two of the N-type semiconductor layers are alternatively stacked on each other.

摘要翻译： 公开了一种发光器件及其制造方法。 发光二极管包括多个Un-GaN层和多个N型半导体层，N型半导体层上的有源层和有源层上的P型半导体层，其中至少两个 所述Un-GaN层和至少两个所述N型半导体层交替堆叠在一起。

公开(公告)号：US20110076995A1

公开(公告)日：2011-03-31

申请号：US12993577

申请日：2009-05-08

申请人： Tae Yun Kim

发明人： Tae Yun Kim

IPC分类号： H04W4/00

CPC分类号： H04L67/36 ,  H04L65/1069 ,  H04L65/1083 ,  H04L65/1096 ,  H04M1/57 ,  H04M1/72547 ,  H04M3/42059 ,  H04M2203/2038 ,  H04W4/16

摘要： A system and method for providing a multimedia object linked to the mobile communication network is provided. The method includes: (a) the mobile device detecting a ringing signal or call signal of a call; (b) the mobile device extracting a phone number from the detected ringing signal or call signal; (c) the mobile device requesting the expression object server for a multimedia expression object corresponding to the extracted phone number; (d) the expression object server searching a multimedia expression object corresponding to the extracted phone number and transmitting it to the mobile device; and (e) the mobile device displaying the multimedia expression object at least one of the times for originating a call, receiving a call, in the middle of a call and at the end of a call.

摘要翻译： 提供了一种用于提供链接到移动通信网络的多媒体对象的系统和方法。 该方法包括：（a）移动设备检测呼叫的振铃信号或呼叫信号; （b）移动设备从检测到的振铃信号或呼叫信号中提取电话号码; （c）请求表达对象服务器的移动装置对应于所提取的电话号码的多媒体表示对象; （d）表达对象服务器搜索与所提取的电话号码相对应的多媒体表达目标并将其发送到移动设备; 和（e）移动设备在呼叫中间和呼叫结束时，至少发出一个呼叫，接收呼叫，接收呼叫的时间中显示多媒体表达对象。

公开(公告)号：US07853299B2

公开(公告)日：2010-12-14

申请号：US11978572

申请日：2007-10-30

申请人： Sung-Ill Kang ,  Tae-Yun Kim ,  Jong-Gun Bae

发明人： Sung-Ill Kang ,  Tae-Yun Kim ,  Jong-Gun Bae

IPC分类号： H04M1/00

CPC分类号： H04N5/2252 ,  H04N2007/145

摘要： A portable communication device including a first housing and second housing, wherein the second housing is connected to the first housing so that it is rotatable around a first hinge axis while facing a top surface of the first housing to allow movement toward or away from the first housing. The device also includes a third housing connected to the second housing so that it is rotatable around the first hinge axis while facing the top surface of the first housing to allow movement toward or away from the first housing, and rotatable around a third hinge axis to allow rotational movement of a display. A battery pack, serving as a grip, is connected to the first housing so that it is rotatable around a third hinge axis while facing a bottom surface of the first housing to allow movement toward or away from the first housing. A sensing unit is provided to sense whether the battery pack is rotated.

摘要翻译： 一种包括第一壳体和第二壳体的便携式通信装置，其中所述第二壳体连接到所述第一壳体，使得所述第二壳体可围绕第一铰链轴线旋转，同时面向所述第一壳体的顶表面，以允许朝向或远离所述第一壳体 住房。 该装置还包括连接到第二壳体的第三壳体，使得其可围绕第一铰链轴线旋转，同时面向第一壳体的顶表面，以允许朝向或远离第一壳体移动，并且可围绕第三铰链轴线转动至 允许显示器的旋转移动。 用作手柄的电池组连接到第一壳体，使得其能够围绕第三铰链轴线旋转，同时面向第一壳体的底表面以允许朝向或远离第一壳体移动。 提供感测单元以感测电池组是否旋转。

公开(公告)号：US07823025B2

公开(公告)日：2010-10-26

申请号：US12273667

申请日：2008-11-19

申请人： Tae Yun Kim

发明人： Tae Yun Kim

IPC分类号： G06F11/00

CPC分类号： G11C29/12015 ,  G11C29/14

摘要： Disclosed is a method for testing a memory device with a long-term clock signal by automatically performing precharge only after activation. In this method, a signal for precharging the banks of the memory device is automatically generated only at the falling edge of an external signal when a signal for activating the banks is applied. Accordingly, the present invention ensures a stable test of the memory device, reducing the testing time.

摘要翻译： 公开了一种通过仅在激活后自动执行预充电来测试具有长期时钟信号的存储器件的方法。 在该方法中，当施加用于激活存储体的信号时，仅在外部信号的下降沿才自动产生用于对存储器件的存储体进行预充电的信号。 因此，本发明确保了存储器件的稳定测试，减少了测试时间。

公开(公告)号：US20100033222A1

公开(公告)日：2010-02-11

申请号：US12579705

申请日：2009-10-15

申请人： Kyoung-Nam KIM ,  Tae-Yun KIM

发明人： Kyoung-Nam KIM ,  Tae-Yun KIM

IPC分类号： H03K5/04

CPC分类号： G06F1/04 ,  H03K5/1565 ,  H03K2005/00091

摘要： A pulse control device is maintained with a constant pulse width corresponding to a change of process or temperature. The pulse control device comprises a fuse set for selectively outputting a delay increase signal and a delay decrease signal that have a different state based on a cutting or non-cutting state of a fuse on which information on a change of process is programmed, and a pulse generator provided with a plurality of delay cells with predetermined time delay for selectively increasing or decreasing the number of the plurality of delay cells depending on the delay increase signal and the delay decrease signal to generate an internal clock with a pulse width corresponding to the number of the increased or decreased delay cells.

摘要翻译： 维持脉冲控制装置，其具有对应于过程或温度变化的恒定脉冲宽度。 所述脉冲控制装置包括用于选择性地输出延迟增加信号和延迟减小信号的熔丝，所述延迟增加信号和延迟减小信号基于其上编程关于过程改变的信息的熔丝的切割或非切割状态具有不同的状态，以及 脉冲发生器，其具有预定的时间延迟的多个延迟单元，用于根据所述延迟增加信号和所述延迟减小信号选择性地增加或减少所述多个延迟单元的数量，以产生具有对应于所述数量的脉冲宽度的内部时钟 的延迟细胞增加或减少。

公开(公告)号：US07622973B2

公开(公告)日：2009-11-24

申请号：US11477591

申请日：2006-06-30

申请人： Kyoung-Nam Kim ,  Tae-Yun Kim

发明人： Kyoung-Nam Kim ,  Tae-Yun Kim

IPC分类号： H03K5/04

CPC分类号： G06F1/04 ,  H03K5/1565 ,  H03K2005/00091

摘要： Provided is a pulse control device is maintained with a constant pulse width corresponding to a change of process or temperature. The pulse control device comprises a fuse set for selectively outputting a delay increase signal and a delay decrease signal that have a different state based on a cutting or non-cutting state of a fuse on which information on a change of process is programmed, and a pulse generator provided with a plurality of delay cells with predetermined time delay for selectively increasing or decreasing the number of the plurality of delay cells depending on the delay increase signal and the delay decrease signal to generate an internal clock with a pulse width corresponding to the number of the increased or decreased delay cells.

摘要翻译： 提供了一种脉冲控制装置，其具有对应于过程或温度变化的恒定脉冲宽度。 所述脉冲控制装置包括用于选择性地输出延迟增加信号和延迟减小信号的熔丝，所述延迟增加信号和延迟减小信号基于其上编程关于过程改变的信息的熔丝的切割或非切割状态具有不同的状态，以及 脉冲发生器，其具有预定的时间延迟的多个延迟单元，用于根据所述延迟增加信号和所述延迟减小信号选择性地增加或减少所述多个延迟单元的数量，以产生具有对应于所述数量的脉冲宽度的内部时钟 的延迟细胞增加或减少。

公开(公告)号：US07560978B2

公开(公告)日：2009-07-14

申请号：US11806558

申请日：2007-06-01

申请人： Sang-Jin Byeon ,  Tae-Yun Kim ,  Jun-Gi Choi

发明人： Sang-Jin Byeon ,  Tae-Yun Kim ,  Jun-Gi Choi

IPC分类号： G05F1/10

CPC分类号： G05F1/465

摘要： An internal voltage generator for use in a semiconductor memory device includes a first voltage detection unit, a second voltage detection unit, a detection signal generation unit, and an internal voltage generation unit. The first voltage detection unit detects a voltage level of an internal voltage changing linearly depending on a temperature variation to output a first detection signal. The second voltage detection unit detects the voltage level having a constant value without concerning the temperature variation to output a second detection signal. The detection signal output unit combines the first and the second detection signal to generate a combined detection signal for detecting the voltage level linearly varying according to the temperature variation in a first range of temperature and detecting the voltage level having the constant value in a second range of temperature.

摘要翻译： 用于半导体存储器件的内部电压发生器包括第一电压检测单元，第二电压检测单元，检测信号生成单元和内部电压产生单元。 第一电压检测单元检测根据温度变化线性变化的内部电压的电压电平，以输出第一检测信号。 第二电压检测单元检测具有恒定值的电压电平而不涉及温度变化以输出第二检测信号。 检测信号输出单元组合第一和第二检测信号以产生组合检测信号，用于根据第一温度范围内的温度变化检测线性变化的电压电平，并检测具有第二范围中的常数值的电压电平 的温度。

公开(公告)号：US20090073789A1

公开(公告)日：2009-03-19

申请号：US12273667

申请日：2008-11-19

申请人： Tae Yun KIM

发明人： Tae Yun KIM

IPC分类号： G11C29/00 ,  G11C8/18 ,  G11C7/12 ,  G11C8/00

CPC分类号： G11C29/12015 ,  G11C29/14

摘要： Disclosed is a method for testing a memory device with a long-term clock signal by automatically performing precharge only after activation. In this method, a signal for precharging the banks of the memory device is automatically generated only at the falling edge of an external signal when a signal for activating the banks is applied. Accordingly, the present invention ensures a stable test of the memory device, reducing the testing time.

摘要翻译： 公开了一种通过仅在激活后自动执行预充电来测试具有长期时钟信号的存储器件的方法。 在该方法中，当施加用于激活存储体的信号时，仅在外部信号的下降沿才自动产生用于对存储器件的存储体进行预充电的信号。 因此，本发明确保了存储器件的稳定测试，减少了测试时间。

公开(公告)号：US20090057647A1

公开(公告)日：2009-03-05

申请号：US12198728

申请日：2008-08-26

申请人： Tae Yun KIM ,  Hyo Kun SON

发明人： Tae Yun KIM ,  Hyo Kun SON

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L21/02584 ,  H01L33/007 ,  H01L33/04 ,  H01L33/08 ,  H01L33/32 ,  H01L33/325

摘要： Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.

摘要翻译： 提供一种半导体发光器件及其制造方法。 半导体发光器件包括：第一导电类型半导体层; 在第一导电类型半导体层上的有源层; 有源层上的未掺杂的半导体层; 在未掺杂半导体层上的第一δ掺杂层; 以及在第一δ掺杂层上的第二导电类型半导体层。