公开(公告)号：US20090269618A1

公开(公告)日：2009-10-29

申请号：US12498202

申请日：2009-07-06

申请人： Yuuzo KAMIGUCHI ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo KAMIGUCHI ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

摘要翻译： 提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。 在使感应电流沿与膜的平面垂直的方向流动的磁阻效应元件中，电阻调节层设置在被钉扎层，自由层和非磁性中间层中的至少一个中。 电阻调节层含有氧化物，氮化物，氟化物，碳化物或硼化物作为主要成分。 电阻调节层可以是连续的膜或者可以具有针孔。 因此，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于自旋的散射效应。

公开(公告)号：US20090034134A1

公开(公告)日：2009-02-05

申请号：US12236331

申请日：2008-09-23

申请人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koul ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

发明人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koul ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3227 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic metal intermediate layer located between said pinned layer and said free layer. The element also includes a pair of electrodes electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. At least one of the pinned layer and the free layer may include a thin-film insertion layer. The nonmagnetic metal intermediate layer includes a resistance adjusting layer including at least one of oxides, nitrides and fluorides, and the thin-film insertion layer includes at least one element selected from the group consisting of iron (Fe), cobalt (Co) and nickel (Ni).

摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括具有磁性材料膜的磁性被钉扎层，该磁性材料膜的磁化方向基本上被固定在一个方向上;磁性层，具有响应于外部磁性的磁化方向变化的磁性材料膜 以及位于所述被钉扎层和所述自由层之间的非磁性金属中间层。 该元件还包括电连接到磁阻效应膜的一对电极，以提供垂直于磁阻效应膜的膜平面的感测电流。 被钉扎层和自由层中的至少一个可以包括薄膜插入层。 非磁性金属中间层包括电阻调节层，其包含氧化物，氮化物和氟化物中的至少一种，薄膜插入层包括选自铁（Fe），钴（Co）和镍中的至少一种元素 （Ni）。

公开(公告)号：US20080158737A1

公开(公告)日：2008-07-03

申请号：US12042166

申请日：2008-03-04

申请人： Yuuzo KAMIGUCHI ,  Hiromi YUASA ,  Tomohiko NAGATA ,  Hiroaki YODA

发明人： Yuuzo KAMIGUCHI ,  Hiromi YUASA ,  Tomohiko NAGATA ,  Hiroaki YODA

IPC分类号： G11B5/33

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  G11C11/15

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, if a pinned layer and a free layer have a stacked construction of a magnetic layer and a non-magnetic layer or a stacked construction of a magnetic layer and a magnetic layer, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

摘要翻译： 提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。 在其中使感应电流在垂直于膜的平面的方向上流动的磁阻效应元件中，如果被钉扎层和自由层具有磁性层和非磁性层的层叠结构或堆叠结构 的磁性层和磁性层，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于旋转的散射效应 。

公开(公告)号：US07245461B2

公开(公告)日：2007-07-17

申请号：US11347208

申请日：2006-02-06

申请人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

发明人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3929 ,  G11B5/398 ,  H01F10/324 ,  H01L43/08

摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.

摘要翻译： 提供了能够精确地限定CPP型MR元件中的有源区域并且有效地抑制和消除由于来自电极的电流引起的磁场的影响的磁阻效应元件，以及使用其的磁头和磁性再现系统 。 MR元件的有源区域由感测电流流过的部分的面积定义。 此外，用于限定元件的有源区域的柱状电极或柱状非磁性材料的横截面的形状被设计成沿着磁通量的流动延伸，以便有效地只从来自直接下方的轨道的信号 活跃区域。 当不能忽略由于来自柱电极的电流引起的磁场时，来自记录介质的磁通量在一定程度上不对称地进入MR元件的磁轭和磁化自由层。 期望的是，如果柱状电极的截面被设计为沿着磁通量的流动而不对称，则再生效率得到改善。

公开(公告)号：US20050052788A1

公开(公告)日：2005-03-10

申请号：US10970278

申请日：2004-10-22

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  G11C11/15

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, if a pinned layer and a free layer have a stacked construction of a magnetic layer and a non-magnetic layer or a stacked construction of a magnetic layer and a magnetic layer, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

摘要翻译： 提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。 在其中使感应电流在垂直于膜的平面的方向上流动的磁阻效应元件中，如果被钉扎层和自由层具有磁性层和非磁性层的层叠结构或堆叠结构 的磁性层和磁性层，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于旋转的散射效应 。

公开(公告)号：US20050047026A1

公开(公告)日：2005-03-03

申请号：US10967262

申请日：2004-10-19

申请人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

发明人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3929 ,  G11B5/398 ,  H01F10/324 ,  H01L43/08

摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.

公开(公告)号：US06751846B2

公开(公告)日：2004-06-22

申请号：US10401869

申请日：2003-03-31

申请人： Susumu Hashimoto ,  Michiko Hara ,  Tomohiko Nagata ,  Kohichi Tateyama ,  Masatoshi Yoshikawa ,  Takeo Sakakubo ,  Hiroaki Yoda ,  Akio Hori ,  Takashi Koizumi

发明人： Susumu Hashimoto ,  Michiko Hara ,  Tomohiko Nagata ,  Kohichi Tateyama ,  Masatoshi Yoshikawa ,  Takeo Sakakubo ,  Hiroaki Yoda ,  Akio Hori ,  Takashi Koizumi

IPC分类号： G11B5127

CPC分类号： G11B5/313 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3967 ,  Y10T29/49044

摘要： A method for manufacturing a magnetic head which includes a lower write pole having a projection, an upper write pole having a projection opposed to the projection of the lower write pole, and a magnetic gap interposed between the projection of the upper write pole and the projection of the lower write pole, comprising: a first step of making the magnetic gap on the projection of the lower write pole; a second step of making a non-magnetic material layer on the lower write pole, the non-magnetic material layer having a projection on its top surface in positional alignment with the projection of the lower write pole; a third step of making a mask layer on the non-magnetic material layer, the mask layer having an opening in which the top surface of the projection of the non-magnetic material layer is exposed; a fourth step of making a curved recess in the non-magnetic material layer by isotropically etching the non-magnetic material layer through the opening of the mask layer; a fifth step of making an approximately tapered recess down from the bottom of the curved recess by anisotropically etching the non-magnetic material layer through the opening of the mask layer; and a sixth step of making the upper write pole by burying a magnetic material in the tapered recess and the curved recess is provided.

摘要翻译： 一种用于制造磁头的方法，该磁头包括具有突出部的下部写入极，具有与下部写入磁极的突起相对的突出部的上部写入磁极，以及插入在上部写入磁极和突起之间的磁隙 包括：使下部写入极的投影上的磁隙形成的第一步骤; 在下写入磁极上制作非磁性材料层的第二步骤，非磁性材料层在其顶表面上具有与下写入磁极的突起位置对准的突起; 在非磁性材料层上形成掩模层的第三步骤，所述掩模层具有露出所述非磁性材料层的突起的顶表面的开口; 通过所述掩模层的开口对所述非磁性材料层进行各向同性蚀刻来制造所述非磁性材料层中的弯曲凹部的第四工序; 第五步骤，通过通过掩模层的开口各向异性蚀刻非磁性材料层，从弯曲凹槽的底部向下形成大致锥形的凹陷; 并且提供通过将磁性材料埋入锥形凹部和弯曲凹部中来制造上部写入极的第六步骤。