公开(公告)号：US20070030124A1

公开(公告)日：2007-02-08

申请号：US11461012

申请日：2006-07-31

Applicant: Won-Jun LEE

Inventor： Won-Jun LEE

IPC: H04Q5/22

CPC classification number: H04B1/006

Abstract: A mobile communication terminal includes a first transceiver that transmits and receives signals, an RFID transceiver that transmits and receives signals, and a controller that stops the first transceiver while it is performing signal communication, and activates the RFID transceiver.

Abstract translation: 移动通信终端包括发送和接收信号的第一收发器，发送和接收信号的RFID收发器，以及在执行信号通信时停止第一收发器并且激活RFID收发器的控制器。

公开(公告)号：US20060088987A1

公开(公告)日：2006-04-27

申请号：US11249515

申请日：2005-10-14

Applicant: In-Joon Yeo ,  Won-Jun Lee ,  Tae-Hyun Kim ,  Ji-Hong Kim ,  Byoung-Moon Yoon

Inventor： In-Joon Yeo ,  Won-Jun Lee ,  Tae-Hyun Kim ,  Ji-Hong Kim ,  Byoung-Moon Yoon

IPC: H01L21/20

CPC classification number: H01L27/11521 ,  H01L27/115

Abstract: A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate. The insulation pattern has at least one opening that exposes a surface of the substrate. Then, a first polysilicon layer is formed over the substrates such that the first polysilicon layer fills the opening. The first polysilicon layer also includes a void therein. An upper portion of the first polysilicon layer is removed such that void expands to a recess and the recess is exposed. A second polysilicon layer is formed over the substrate such that the second polysilicon layer fills the recess.

Abstract translation: 制造半导体器件的方法包括在衬底上形成绝缘图案。 绝缘图案具有暴露基板表面的至少一个开口。 然后，在基板上形成第一多晶硅层，使得第一多晶硅层填充开口。 第一多晶硅层还包括空隙。 去除第一多晶硅层的上部，使得空隙膨胀到凹部并且凹部暴露。 第二多晶硅层形成在衬底上，使得第二多晶硅层填充凹部。

公开(公告)号：US20050266647A1

公开(公告)日：2005-12-01

申请号：US11082616

申请日：2005-03-17

Applicant: Tae-hyun Kim ,  Byoung-moon Yoon ,  Won-jun Lee ,  Yong-sun Ko ,  Kyung-hyun Kim

Inventor： Tae-hyun Kim ,  Byoung-moon Yoon ,  Won-jun Lee ,  Yong-sun Ko ,  Kyung-hyun Kim

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/8247 ,  H01L27/115

CPC classification number: H01L27/11521 ,  H01L21/76224 ,  H01L27/115

Abstract: Methods of manufacturing a semiconductor device are provided. A trench is formed in a semiconductor substrate. A first field oxide layer is formed that partially fills the trench. The first field oxide layer defines an active region of the substrate that is adjacent to the trench. An upper portion of sidewalls of the trench extends upward beyond a surface of the first field oxide layer. A first liner is formed on the first field oxide layer and on the portion of the sidewalls of the trench that extend upward beyond the first field oxide layer. A second field oxide layer is formed on the first liner and fills the trench. The second field oxide layer and the first liner are each partially removed to expose a top adjacent surface and upper sidewalls of the trench along the active region of the substrate. A dielectric layer is formed on the exposed top adjacent surface and upper sidewalls of the trench. A gate electrode is formed on the dielectric layer.

Abstract translation: 提供制造半导体器件的方法。 在半导体衬底中形成沟槽。 形成部分填充沟槽的第一场氧化物层。 第一场氧化物层限定与沟槽相邻的衬底的有源区。 沟槽的侧壁的上部向上延伸超过第一场氧化物层的表面。 第一衬垫形成在第一场氧化物层上并且在沟槽的侧壁的部分上方向上延伸超过第一场氧化物层。 在第一衬垫上形成第二场氧化物层并填充沟槽。 每个部分去除第二场氧化物层和第一衬里以沿着衬底的有源区域暴露沟槽的顶部相邻表面和上侧壁。 介电层形成在沟槽的暴露的顶部相邻表面和上侧壁上。 在电介质层上形成栅电极。

公开(公告)号：US20050255654A1

公开(公告)日：2005-11-17

申请号：US11103069

申请日：2005-04-11

Applicant: Won-Jun Lee ,  Tae-Hyun Kim ,  Yong-Sun Ko ,  Kyung-Hyun Kim ,  Byoung-Moon Yoon ,  Ji-Hong Kim

Inventor： Won-Jun Lee ,  Tae-Hyun Kim ,  Yong-Sun Ko ,  Kyung-Hyun Kim ,  Byoung-Moon Yoon ,  Ji-Hong Kim

IPC: H01L21/336 ,  H01L21/8247 ,  H01L27/115

CPC classification number: H01L27/115 ,  H01L27/11521

Abstract: Methods of forming non-volatile memory devices include the steps of forming a semiconductor substrate having first and second floating gate electrodes thereon and an electrically insulating region extending between the first and second floating gate electrodes. A step is then performed to etch back the electrically insulating region to expose upper corners of the first and second floating gate electrodes. Another etching step is then performed. This etching step includes exposing upper surfaces and the exposed upper corners of the first and second floating gate electrodes to an etchant that rounds the exposed upper corners of the first and second floating gate electrodes. The step of etching back the electrically insulating region includes etching back the electrically insulating region to expose sidewalls of the first and second floating gate electrodes having heights ranging from about 30 Å to about 200 Å. The step of exposing the upper corners of the first and second floating gate electrodes to an etchant is followed by the step of etching back the electrically insulating region to expose entire sidewalls of the first and second floating gate electrodes.

Abstract translation: 形成非易失性存储器件的方法包括以下步骤：在其上形成具有第一和第二浮栅的半导体衬底和在第一和第二浮栅之间延伸的电绝缘区。 然后执行步骤以回蚀电绝缘区域以暴露第一和第二浮栅电极的上角。 然后执行另一蚀刻步骤。 该蚀刻步骤包括将第一和第二浮栅电极的上表面和暴露的上角露出到蚀刻剂，该蚀刻剂围绕第一和第二浮栅的暴露的上角。 蚀刻回电绝缘区域的步骤包括蚀刻电绝缘区域以暴露第一和第二浮栅电极的侧壁，其高度范围为约至约200。 将第一和第二浮栅的上角暴露于蚀刻剂的步骤之后是蚀刻电绝缘区以暴露第一和第二浮栅的整个侧壁的步骤。

公开(公告)号：US20050181600A1

公开(公告)日：2005-08-18

申请号：US11101606

申请日：2005-04-08

Applicant: Won-Jun Lee

Inventor： Won-Jun Lee

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L21/44 ,  H01L21/4763

CPC classification number: H01L21/7685 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76876 ,  H01L23/53223 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a method for forming a multilayer metal thin film capable of improving electromigration reliability. In accordance with an aspect of the present invention, there is provided a method for forming a multilayer metal thin film in a semiconductor device, comprising the steps of: forming a Ti film having an crystal orientation by using an ionized physical vapor deposition method; forming a TiN film on the Ti film in order to form a multilayer stack, wherein the TiN film has an crystal orientation; and forming an aluminum film on the multilayer stack in an crystal orientation. Accordingly, the aluminum metal interconnection according to the present invention increases the orientation of the Ti film and improves the orientation of the aluminum to control the electromigration resistance, by using the IPVD method in forming the Ti film as an underlayer of the aluminum film.

Abstract translation: 公开了一种能够提高电迁移可靠性的多层金属薄膜的形成方法。 根据本发明的一个方面，提供了一种在半导体器件中形成多层金属薄膜的方法，包括以下步骤：通过使用电离物理气相沉积法形成具有<002>晶体取向的Ti膜 方法; 在Ti膜上形成TiN膜以形成多层堆叠，其中TiN膜具有<111>晶体取向; 并在111层结晶取向上在多层叠层上形成铝膜。 因此，根据本发明的铝金属互连通过使用IPVD方法在形成Ti膜作为底层的同时增加了Ti膜的<002>取向并改善了铝的<111>取向以控制电迁移阻力 的铝膜。

公开(公告)号：US09375751B2

公开(公告)日：2016-06-28

申请号：US13704611

申请日：2011-11-29

Applicant: Sang-Ouk Kim ,  Won-jun Lee ,  Duck-hyun Lee ,  Jin-ah Lee

Inventor： Sang-Ouk Kim ,  Won-jun Lee ,  Duck-hyun Lee ,  Jin-ah Lee

IPC: B05D1/18 ,  B82Y40/00 ,  C01B31/02 ,  B82Y30/00 ,  B05D3/10 ,  B05D3/00

CPC classification number: B05D1/18 ,  B05D3/002 ,  B05D3/104 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/168 ,  Y10T428/2918 ,  Y10T428/2991

Abstract: A method for manufacturing an inorganic-nano structure composite, a method for manufacturing a cabon nanotube composite by using the same, and a carbon nanotube composite manufactured by the same are provided. The method for manufacturing the inorganic-nano structure composite comprises a step of doping pentavalent elements on the nanostructure; and a step of growing the inorganic material from the doping points of the pentavalent elements by dipping the nanostructure on which the pentavalent elements are doped into a precursor solution of the inorganic material, and according to the present invention the pentavalent elements such as nitrogen are doped on the nanostructure and is utilized as the crystallization point of the inorganic material, instead of forming the separate coating layer to the organic-based nanostructure, or binding the binding group to the surface.

Abstract translation: 提供一种无机纳米结构复合体的制造方法，使用该方法制造碳纳米管复合体的方法和由其制造的碳纳米管复合体。 制备无机纳米结构复合材料的方法包括在纳米结构上掺杂五价元素的步骤; 以及通过将掺杂有五价元素的纳米结构浸渍在无机材料的前体溶液中，从五价元素的掺杂点生长无机材料的步骤，根据本发明，将五价元素如氮掺杂 并且被用作无机材料的结晶点，而不是形成分离的涂层到有机基纳米结构，或将结合基团结合到表面。

公开(公告)号：US20130089735A1

公开(公告)日：2013-04-11

申请号：US13704611

申请日：2011-11-29

Applicant: Sang-Ouk Kim ,  Won-jun Lee ,  Duck-hyun Lee ,  Jin-ah Lee

Inventor： Sang-Ouk Kim ,  Won-jun Lee ,  Duck-hyun Lee ,  Jin-ah Lee

IPC: B05D1/18

CPC classification number: B05D1/18 ,  B05D3/002 ,  B05D3/104 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/168 ,  Y10T428/2918 ,  Y10T428/2991

Abstract: A method for manufacturing an inorganic-nano structure composite, a method for manufacturing a cabon nanotube composite by using the same, and a carbon nanotube composite manufactured by the same are provided. The method for manufacturing the inorganic-nano structure composite comprises a step of doping pentavalent elements on the nanostructure; and a step of growing the inorganic material from the doping points of the pentavalent elements by dipping the nanostructure on which the pentavalent elements are doped into a precursor solution of the inorganic material, and according to the present invention the pentavalent elements such as nitrogen are doped on the nanostructure and is utilized as the crystallization point of the inorganic material, instead of forming the separate coating layer to the organic-based nanostructure, or binding the binding group to the surface.

Abstract translation: 提供一种无机纳米结构复合体的制造方法，使用该方法制造碳纳米管复合体的方法和由其制造的碳纳米管复合体。 制备无机纳米结构复合材料的方法包括在纳米结构上掺杂五价元素的步骤; 以及通过将掺杂有五价元素的纳米结构浸渍在无机材料的前体溶液中，从五价元素的掺杂点生长无机材料的步骤，根据本发明，将五价元素如氮掺杂 并且被用作无机材料的结晶点，而不是形成分离的涂层到有机基纳米结构，或将结合基团结合到表面。

公开(公告)号：US08229406B2

公开(公告)日：2012-07-24

申请号：US12374780

申请日：2007-08-09

Applicant: Won-Jun Lee ,  Seung-Ook Je ,  Su-Nyeon Kim ,  Jae-Young Park ,  Jin-Hong Kim

Inventor： Won-Jun Lee ,  Seung-Ook Je ,  Su-Nyeon Kim ,  Jae-Young Park ,  Jin-Hong Kim

IPC: H04W4/16

CPC classification number: H04L65/1069 ,  H04L65/1009 ,  H04W76/15

Abstract: Disclosed is a method for providing a target mobile station with a multimedia content such as audio or video content before a call an originating mobile station attempted to connect is answered by the target mobile station. A mobile communication network protocol for multimedia transmission between a target mobile station and a network is established before a called party receives a call, so that multimedia such as images or moving pictures may be sent to the target mobile station before the called party answers the call. In this way, the called party is able to enjoy a multimedia service before the phone call is connected. Moreover, if the multimedia is an audio or moving picture about a calling party, the called party can identify the calling party based on the multimedia.

Abstract translation: 公开了一种用于在目标移动台应答发起移动台尝试连接的呼叫之前向目标移动台提供诸如音频或视频内容的多媒体内容的方法。 在被叫方接收呼叫之前，建立用于目标移动台和网络之间的多媒体传输的移动通信网络协议，从而在被叫方应答呼叫之前，诸如图像或运动图像的多媒体可以被发送到目标移动台 。 以这种方式，被叫方在连接电话之前能够享受多媒体业务。 此外，如果多媒体是关于呼叫方的音频或运动图像，则被叫方可以基于多媒体识别主叫方。

公开(公告)号：US08168509B2

公开(公告)日：2012-05-01

申请号：US12959995

申请日：2010-12-03

Applicant: Ki-Hyung Ko ,  Byoung-Moon Yoon ,  Won-Jun Lee ,  Joon-Sang Park ,  Jun-Youl Yang ,  Seung-Ho Park ,  Myung-Jung Pyo

Inventor： Ki-Hyung Ko ,  Byoung-Moon Yoon ,  Won-Jun Lee ,  Joon-Sang Park ,  Jun-Youl Yang ,  Seung-Ho Park ,  Myung-Jung Pyo

IPC: H01L21/30

CPC classification number: H01L27/14689 ,  H01L27/1464 ,  H01L27/14685

Abstract: In an etching method, a thin layer is formed on a first surface of a first substrate doped with first impurities having a first doping concentration. The thin layer is doped with second impurities having a second doping concentration lower than the first doping concentration. A second substrate is formed on the thin layer. A second surface of the first substrate is polished. The polished first substrate is cleaned using a cleaning solution including ammonia and deionized water. The cleaned first substrate is etched to expose the thin layer.

Abstract translation: 在蚀刻方法中，在掺杂有具有第一掺杂浓度的第一杂质的第一衬底的第一表面上形成薄层。 该薄层掺杂有具有低于第一掺杂浓度的第二掺杂浓度的第二杂质。 第二衬底形成在薄层上。 抛光第一衬底的第二表面。 使用包括氨和去离子水的清洁溶液清洁抛光的第一衬底。 蚀刻清洁的第一衬底以暴露薄层。

公开(公告)号：US20110306173A1

公开(公告)日：2011-12-15

申请号：US13084657

申请日：2011-04-12

Applicant: Jun-Soo BAE ,  Suk-Hun CHOI ,  Won-Jun LEE ,  Joon-Sang PARK

Inventor： Jun-Soo BAE ,  Suk-Hun CHOI ,  Won-Jun LEE ,  Joon-Sang PARK

IPC: H01L21/02

CPC classification number: H01L45/1683 ,  H01L45/06 ,  H01L45/141

Abstract: A method of fabricating a phase change memory device includes the use of first, second and third polishing processes. The first polishing process forms a first contact portion using a first sacrificial layer and the second polishing process forms a phase change material pattern using a second sacrificial layer. After removing the first and second sacrificial layers to expose resultant protruding structures of the first contact portion and the phase change material pattern, a third polishing process is used to polish the resultant protruding structures using an insulation layer as a polishing stopper layer.

Abstract translation: 制造相变存储器件的方法包括使用第一，第二和第三抛光工艺。 第一抛光工艺使用第一牺牲层形成第一接触部分，并且第二抛光工艺使用第二牺牲层形成相变材料图案。 在去除第一和第二牺牲层以暴露第一接触部分的相应突出结构和相变材料图案之后，使用第三抛光工艺来使用绝缘层作为抛光停止层来抛光所得的突出结构。