METHOD FABRICATING SEMICONDUCTOR DEVICE USING MULTIPLE POLISHING PROCESSES
    3.
    发明申请
    METHOD FABRICATING SEMICONDUCTOR DEVICE USING MULTIPLE POLISHING PROCESSES 有权
    使用多个抛光工艺制作半导体器件的方法

    公开(公告)号:US20110306173A1

    公开(公告)日:2011-12-15

    申请号:US13084657

    申请日:2011-04-12

    CPC classification number: H01L45/1683 H01L45/06 H01L45/141

    Abstract: A method of fabricating a phase change memory device includes the use of first, second and third polishing processes. The first polishing process forms a first contact portion using a first sacrificial layer and the second polishing process forms a phase change material pattern using a second sacrificial layer. After removing the first and second sacrificial layers to expose resultant protruding structures of the first contact portion and the phase change material pattern, a third polishing process is used to polish the resultant protruding structures using an insulation layer as a polishing stopper layer.

    Abstract translation: 制造相变存储器件的方法包括使用第一,第二和第三抛光工艺。 第一抛光工艺使用第一牺牲层形成第一接触部分,并且第二抛光工艺使用第二牺牲层形成相变材料图案。 在去除第一和第二牺牲层以暴露第一接触部分的相应突出结构和相变材料图案之后,使用第三抛光工艺来使用绝缘层作为抛光停止层来抛光所得的突出结构。

    ETCHING METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    5.
    发明申请
    ETCHING METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    用于制造半导体器件的蚀刻方法

    公开(公告)号:US20080102595A1

    公开(公告)日:2008-05-01

    申请号:US11969105

    申请日:2008-01-03

    CPC classification number: H01L28/91 H01L21/31111

    Abstract: A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is removed or reduced to prevent any bubbles included in the chemical solution from adhering to the electrode. Thus, the chemical solution can etch the dielectric layers without being blocked by any bubbles included in a chemical solution.

    Abstract translation: 提供具有电介质层和从电介质层的顶表面部分突出的电极的晶片。 用诸如LAL的化学溶液蚀刻电介质层。 在蚀刻之前,电极的突出部分被去除或减少,以防止化学溶液中包含的任何气泡粘附到电极上。 因此,化学溶液可以蚀刻介电层而不被包含在化学溶液中的任何气泡所阻挡。

    ANTENNA SHARING APPARATUS FOR MOBILE COMMUNICATION TERMINAL AND METHOD THEREOF
    6.
    发明申请
    ANTENNA SHARING APPARATUS FOR MOBILE COMMUNICATION TERMINAL AND METHOD THEREOF 有权
    用于移动通信终端的天线共享设备及其方法

    公开(公告)号:US20070030124A1

    公开(公告)日:2007-02-08

    申请号:US11461012

    申请日:2006-07-31

    Applicant: Won-Jun LEE

    Inventor: Won-Jun LEE

    CPC classification number: H04B1/006

    Abstract: A mobile communication terminal includes a first transceiver that transmits and receives signals, an RFID transceiver that transmits and receives signals, and a controller that stops the first transceiver while it is performing signal communication, and activates the RFID transceiver.

    Abstract translation: 移动通信终端包括发送和接收信号的第一收发器,发送和接收信号的RFID收发器,以及在执行信号通信时停止第一收发器并且激活RFID收发器的控制器。

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