Abstract:
A method for manufacturing a fin transistor includes forming a trench by etching a semiconductor substrate. A flowable insulation layer is filled in the trench to form a field insulation layer defining an active region. The portion of the flowable insulation layer coming into contact with a gate forming region is etched so as to protrude the gate forming region in the active region. A protective layer over the semiconductor substrate is formed to fill the portion of the etched flowable insulation layer. The portion of the protective layer formed over the active region is removed to expose the active region of the semiconductor substrate. The exposed active region of the semiconductor substrate is cleaned. The protective layer remaining on the portion of the etched flowable insulation layer is removed. Gates are formed over the protruded gate forming regions in the active region.
Abstract:
An image processing device and a method thereof. The image processing device includes a mapper to map a two-dimensional plane of an input image into a three-dimensional vector surface, a coefficient calculator to calculate a coefficient with respect to an equation of a plane formed by a plurality of pixels mapped by the mapper, and an interpolator to interpolate by calculating a gray-level of a location to be interpolated based on the equation of the plane obtained by the coefficient calculator. When the pixels on the 2-D plane are mapped into the 3-D vector space, the image processing device according to an exemplary embodiment of the present general inventive concept prevents overshoot or undershoot which may occur at the edges or on planes, and thus displays a smooth image.
Abstract:
A semiconductor device includes a semiconductor substrate having an active region including a channel portion. An isolation layer is formed in the semiconductor substrate to define the active region, and a gate is formed over the channel portion in the active region. The active region of the semiconductor substrate is etched to such that the entire active region is below an upper surface of the isolation layer. A U-shaped groove is formed in the channel portion of the active region, except the edges in a direction of the channel width thereof, in order to increase the channel width. In the semiconductor device, there is an increase in channel length and channel width leading to a reduction in leakage current and on increase in operation current.
Abstract:
An image enhancement apparatus using motion estimation includes: a motion estimation unit estimating a degree of motion between an input image on which image enhancement is performed and a temporally successive image; and an enhancement unit applying the image enhancement to an area without motion in the input image while not applying the image enhancement to an area with motion in the input image on the basis of the motion degree. Accordingly, by performing image enhancement on an area without motion in an input image while not performing image enhancement on an area with motion in the input image, it is possible to prevent image noise from being generated in the area with motion.
Abstract:
Disclosed are a contact plug of a semiconductor device and a method for fabricating the same. The semiconductor device includes: an epitaxial stack formed by inserting a heteroepitaxy layer between a pair of homoepitaxy layers; and a contact plug including a metal layer on the epitaxial stack. Accordingly, in accordance with the present invention, the contact plug is selectively doped in a high concentration, thereby reducing a contact resistance. Furthermore, the present invention also provides an effect of reducing degradation in a device property without decreasing yields of products by minimizing a thermal budget through using a SEG-silicon germanium layer capable of obtaining a high doping concentration and a high deposition speed.
Abstract:
A judder detection apparatus, a de-interlacing apparatus using the judder detection apparatus, and a de-interlacing method. The judder detection apparatus includes a judder detector to detect whether a detected pattern that is similar to a judder pattern occurs using predetermined pixel values of even and odd fields sequentially input, a pattern detector to detect whether an input image has a uniform pixel value in every other line of the even and odd fields and whether consecutive lines of the even and odd fields have a blind pattern having a difference from the uniform pixel that is greater than or equal to a threshold value, and a determiner to determine whether the detected pattern that is similar to the judder pattern is a judder based on whether the blind pattern is detected.
Abstract:
An edge detection apparatus and method includes a mapping part to map a two-dimensional plane of an input image into a three-dimensional vector surface, a coefficient calculation part to calculate coefficients for an equation of planes each formed with plural pixels and mapped by the mapping part, an angle calculation part to calculate an angle formed by a normal vector with respect to the equation of planes, and an edge decision part to determine whether an edge exists based on the angle calculated by the angle calculation part. Accordingly, the edge detection apparatus can not only efficiently detect edges without sensitivity to noise over high frequency bands, but also adaptively perform edge detections depending on the extent of noise so as to provide diverse adjustment points for the edge detections.
Abstract:
A method and an apparatus for examining wafers includes a wafer cassette having a capacity for holding a plurality of wafers located on each of first and second locaters. The wafer cassettes are fixedly held on the first and second locaters during the wafer examination. A first indicator shows that the wafer cassettes are fixedly held on the first and second locaters. A robot arm sequentially carries each of the wafers between the first locator, an aligner, a scanning chamber and the second locater to examine the wafers. The wafer cassettes are released when the examination is complete, and a second indicator shows that the examination is complete.
Abstract:
Provided is a method for displaying electricity use status and a portable device thereof by identifying at least one electronic appliance in an image on a screen captured through a camera, receiving electricity use information of the at least one electronic appliance, determining the electricity use status of the at least one electronic appliance using the received electricity use information, and displaying one of a plurality of Graphical User Interfaces (GUI), wherein each GUI corresponds to a different stage of the electricity use status of the at least one electronic appliance.
Abstract:
Provided are a flux-locked loop circuit, a flux-locked loop method and a superconducting quantum interference device (SQUID) measuring apparatus. The flux-locked loop circuit includes a pre-amplifier configured to amplify a signal output of a SQUID, an integrator configured to integrate a signal output from the pre-amplifier and output the integrated signal, an operating range expanding unit configured to initialize the integrator by comparing an output signal of the integrator with a positive or negative reference reset voltage corresponding to an external flux of a predetermined integral multiple of flux quantum, and a feedback circuit configured to supply current to eliminate a difference between the external flux applied to the SQUID and a magnetic flux corresponding to an integral multiple of the reference reset voltage according to the output signal of the integrator.