公开(公告)号：US12191118B2

公开(公告)日：2025-01-07

申请号：US18419389

申请日：2024-01-22

Applicant: Applied Materials, Inc.

Inventor： James Carducci ,  Richard C. Fovell ,  Larry D. Elizaga ,  Silverst Rodrigues ,  Vladimir Knyazik ,  Philip Allan Kraus ,  Thai Cheng Chua

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/511

Abstract: Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a thickness of the cover. In an embodiment, the housing further comprises a second hole through a thickness of the conductive body. In an embodiment, the second hole intersects with the channel.

公开(公告)号：US20240379329A1

公开(公告)日：2024-11-14

申请号：US18144747

申请日：2023-05-08

Applicant: Applied Materials, Inc,

Inventor： Thai Cheng Chua ,  ADAM FISCHBACH ,  CHRISTIAN VALENCIA ,  RICHARD MCKISSICK ,  BRIAN HATCHER

IPC: H01J37/32

Abstract: Embodiments disclosed herein include a remote plasma source. In an embodiment, the remote plasma source comprises a housing where a fluidic channel passes from a first end to a second end of the housing. In an embodiment, an applicator intersects the fluidic channel. In an embodiment, the applicator comprises a dielectric body, and a pin inserted in a hole in the dielectric body.

公开(公告)号：US20240153795A1

公开(公告)日：2024-05-09

申请号：US17981278

申请日：2022-11-04

Applicant: Applied Materials, Inc.

Inventor： Adam Fischbach ,  Richard McKissick ,  Brian Hatcher ,  Christian Valencia ,  Thai Cheng Chua ,  Philip Allan Kraus

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/68

CPC classification number: H01L21/6719 ,  H01J37/32192 ,  H01L21/681

Abstract: Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a chamber, and a lid configured to seal the chamber. In an embodiment, a modular microwave plasma applicator is provided through the lid, and an optical port is provided through the lid and adjacent to the modular microwave plasma source. In an embodiment, a pin is inserted in the optical port.

公开(公告)号：US20230109912A1

公开(公告)日：2023-04-13

申请号：US17903913

申请日：2022-09-06

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  CHRISTIAN VALENCIA ,  DOREEN YONG ,  TUCK FOONG KOH ,  JENN-YUE WANG ,  PHILIP ALLAN KRAUS

IPC: H01L21/311

Abstract: Embodiments disclosed herein include a method of etching a 3D structure. In an embodiment, the method comprises providing the 3D structure in a microwave plasma chamber. In an embodiment, the 3D structure comprises a substrate, and alternating layers of silicon oxide and silicon nitride over the substrate. In an embodiment, the method further comprises flowing a first gas into the microwave plasma chamber, where the first gas comprises sulfur and fluorine. In an embodiment, the method comprises flowing a second gas into the microwave plasma chamber, where the second gas comprises an inert gas. In an embodiment, the method further comprises striking a plasma in the microwave plasma chamber, and etching the silicon nitride, where an etching selectivity of silicon nitride to silicon oxide is 50:1 or greater.

公开(公告)号：US11564292B2

公开(公告)日：2023-01-24

申请号：US16586548

申请日：2019-09-27

Applicant: Applied Materials, Inc.

Inventor： James Carducci ,  Richard C. Fovell ,  Larry D. Elizaga ,  Silverst Rodrigues ,  Thai Cheng Chua ,  Philip Allan Kraus

IPC: H05B6/64 ,  H05B6/80

Abstract: Embodiments disclosed herein include a housing for a source assembly. In an embodiment, the housing comprises a conductive body with a first surface and a second surface opposite from the first surface, and a plurality of openings through a thickness of the conductive body between the first surface and the second surface. In an embodiment, the housing further comprises a channel into the first surface of the conductive body, and a cover over the channel. In an embodiment, a first stem over the cover extends away from the first surface, and a second stem over the cover extends away from the first surface. In an embodiment, the first stem and the second stem open into the channel.

公开(公告)号：US11217443B2

公开(公告)日：2022-01-04

申请号：US16676097

申请日：2019-11-06

Applicant: Applied Materials, Inc.

Inventor： Vinayak Veer Vats ,  Hang Yu ,  Philip Allan Kraus ,  Sanjay G. Kamath ,  William John Durand ,  Lakmal Charidu Kalutarage ,  Abhijit B. Mallick ,  Changling Li ,  Deenesh Padhi ,  Mark Joseph Saly ,  Thai Cheng Chua ,  Mihaela A. Balseanu

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/56

Abstract: Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.

公开(公告)号：US20210327685A1

公开(公告)日：2021-10-21

申请号：US17359318

申请日：2021-06-25

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  Christian Amormino ,  Hanh Nguyen ,  Kallol Bera ,  Philip Allan Kraus

IPC: H01J37/32

Abstract: Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

公开(公告)号：US20210287882A1

公开(公告)日：2021-09-16

申请号：US17338510

申请日：2021-06-03

Applicant: Applied Materials, Inc.

Inventor： Philip Allan Kraus ,  Thai Cheng Chua ,  Mani Subramani

IPC: H01J37/32 ,  H01J27/18 ,  H05H1/46 ,  C23C16/511 ,  C23C14/35

Abstract: Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

公开(公告)号：US11114282B2

公开(公告)日：2021-09-07

申请号：US16895904

申请日：2020-06-08

Applicant: Applied Materials, Inc.

Inventor： Philip Allan Kraus ,  Thai Cheng Chua ,  Christian Amormino ,  Dmitry A. Dzilno

IPC: H01J37/32 ,  H01Q3/34 ,  H01Q21/00 ,  H03B5/24

Abstract: Embodiments described herein include a modular high-frequency emission source comprising a plurality of high-frequency emission modules and a phase controller. In an embodiment, each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment, each oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, each amplification module is coupled to an oscillator module, in an embodiment, each applicator is coupled to an amplification module. In an embodiment, the phase controller is communicatively coupled to each oscillator module.

公开(公告)号：US20210100076A1

公开(公告)日：2021-04-01

申请号：US16586548

申请日：2019-09-27

Applicant: Applied Materials, Inc.

Inventor： James Carducci ,  Richard C. Fovell ,  Larry D. Elizaga ,  Silverst Rodrigues ,  Thai Cheng Chua ,  Philip Allan Kraus

IPC: H05B6/64 ,  H05B6/80

Abstract: Embodiments disclosed herein include a housing for a source assembly. In an embodiment, the housing comprises a conductive body with a first surface and a second surface opposite from the first surface, and a plurality of openings through a thickness of the conductive body between the first surface and the second surface. In an embodiment, the housing further comprises a channel into the first surface of the conductive body, and a cover over the channel. In an embodiment, a first stem over the cover extends away from the first surface, and a second stem over the cover extends away from the first surface. In an embodiment, the first stem and the second stem open into the channel.