公开(公告)号：US20180209041A1

公开(公告)日：2018-07-26

申请号：US15417001

申请日：2017-01-26

Applicant: ASM IP Holding B.V.

Inventor： Maarit Mäkelä ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/06

CPC classification number: C23C16/45553 ,  C23C16/18

Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.

公开(公告)号：US20150225853A1

公开(公告)日：2015-08-13

申请号：US14621218

申请日：2015-02-12

Applicant: ASM IP HOLDING B.V.

Inventor： Miia Mäntymäki ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455

CPC classification number: C23C16/45553 ,  C23C16/30 ,  C23C16/45527

Abstract: Methods are provided for depositing thin films by vapor deposition using two different metal halide reactants. In some embodiments aluminum fluoride thin films are deposited by atomic layer deposition methods in which a substrate is alternately and sequentially contacted with a first metal halide reactant comprising aluminum, such as AlCl3, and a second metal halide reactant comprising fluorine, such as TiF4.

Abstract translation: 提供了通过使用两种不同的金属卤化物反应物的气相沉积来沉积薄膜的方法。 在一些实施例中，通过原子层沉积方法沉积氟化铝薄膜，其中基底与包含诸如AlCl 3的铝的第一金属卤化物反应物和包含氟的第二金属卤化物反应物如TiF 4交替并顺序地接触。

公开(公告)号：US12209305B2

公开(公告)日：2025-01-28

申请号：US17666903

申请日：2022-02-08

Applicant: ASM IP Holding B.V.

Inventor： Miika Mattinen ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/18 ,  C23C16/08

Abstract: The current disclosure relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to a method of forming a transition metal-comprising material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor comprising a transition metal compound in the reaction chamber, and providing a second precursor in the reaction chamber, wherein the transition metal compound comprises a transition metal halide bound to an adduct ligand, and the second precursor comprises a chalcogen or a pnictogen. The disclosure further relates to a method of forming a transition metal layer, and to semiconductor devices. Further, a vapor deposition assembly is disclosed.

公开(公告)号：US20240368763A1

公开(公告)日：2024-11-07

申请号：US18773858

申请日：2024-07-16

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/44 ,  H01L21/285

Abstract: The present disclosure relates to methods and apparatuses for depositing transition metal-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form transition metal-containing material on the substrate. The transition metal precursor according to the disclosure comprises a transition metal halide compound comprising an organic phosphine adduct ligand.

公开(公告)号：US20240279800A1

公开(公告)日：2024-08-22

申请号：US18438765

申请日：2024-02-12

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Paloma Ruiz Y Kärkkäinen ,  Mikko Ritala ,  Anton Vihervaara ,  Matti Putkonen

IPC: C23C16/32 ,  C23C16/455

CPC classification number: C23C16/32 ,  C23C16/45527 ,  C23C16/45553

Abstract: The present disclosure relates to methods and apparatuses for depositing transition metal carbide-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form transition metal carbide-containing material on the substrate. The second precursor comprises a cyclic diene compound comprising a substituent comprising metalloid.

公开(公告)号：US12065739B2

公开(公告)日：2024-08-20

申请号：US17822686

申请日：2022-08-26

Applicant: ASM IP Holding, B.V.

Inventor： Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/44 ,  H01L21/285

CPC classification number: C23C16/45553 ,  C23C16/08 ,  C23C16/4408 ,  C23C16/45527 ,  H01L21/28506

Abstract: The present disclosure relates to methods and apparatuses for depositing transition metal-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form transition metal-containing material on the substrate. The transition metal precursor according to the disclosure comprises a transition metal halide compound comprising an organic phosphine adduct ligand.

公开(公告)号：US11814715B2

公开(公告)日：2023-11-14

申请号：US17891851

申请日：2022-08-19

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/18 ,  H10N50/85 ,  H10N60/85

CPC classification number: C23C16/45553 ,  C23C16/08 ,  C23C16/18 ,  H10N50/85 ,  H10N60/85

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

公开(公告)号：US20230265035A1

公开(公告)日：2023-08-24

申请号：US18309072

申请日：2023-04-28

Applicant: ASM IP HOLDING B.V.

Inventor： Timo Hatanpää ,  Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C07C49/92 ,  C07C45/77 ,  C23C16/30 ,  C23C16/455

CPC classification number: C07C49/92 ,  C07C45/77 ,  C23C16/305 ,  C23C16/45553

Abstract: Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

公开(公告)号：US11694903B2

公开(公告)日：2023-07-04

申请号：US17353491

申请日：2021-06-21

Applicant: ASM IP HOLDING B.V.

Inventor： Mikko Ritala ,  Chao Zhang ,  Markku Leskelä

IPC: H01L21/311 ,  H01L21/306 ,  H01L21/02 ,  H01L21/285 ,  H01L21/033 ,  H01L21/3105

CPC classification number: H01L21/31138 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28562 ,  H01L21/30604 ,  H01L21/31051 ,  H01L21/31127

Abstract: Aspects of this disclosure relate to selective removal of material of a layer, such as a carbon-containing layer. The layer can be over a patterned structure of two different materials. Treating the layer to cause the removal agent to be catalytically activated by a first area of the patterned structure to remove material of the organic material over the first area at a greater rate than over a second area of the patterned structure having a different composition from the first area.

公开(公告)号：US20230175132A1

公开(公告)日：2023-06-08

申请号：US18052142

申请日：2022-11-02

Applicant: ASM IP HOLDING B.V.

Inventor： Maarit Mäkelä ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/06

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/06 ,  C23C16/45527

Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.