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    Electrostatic drive type MEMS device and manufacturing method thereof, optical MEMS device, light modulation device, GLV device, and laser display
    31.
    发明授权
    Electrostatic drive type MEMS device and manufacturing method thereof, optical MEMS device, light modulation device, GLV device, and laser display 失效
    静电驱动型MEMS器件及其制造方法，光学MEMS器件，光调制器件，GLV器件和激光显示器

    公开(公告)号：US07116462B2

    公开(公告)日：2006-10-03

    申请号：US10468873

    申请日：2002-12-16

    申请人： Koichi Ikeda

    发明人： Koichi Ikeda

    IPC分类号： G02B26/00

    CPC分类号： B81C1/0015 ,  B81B2201/045 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/0173 ,  B81C2203/0109 ,  G02B26/0841

    摘要： An electrostatic drive type MEMS device and a manufacturing method thereof are provided, in which flattening the surface of a driving side electrode, improving performance, and furthering the improvements of the degree of freedom of designing in the manufacturing process are implemented. In addition, a GLV device using this MEMS device is provided, and further a laser display using this GLV device is also provided. The electrostatic drive type MEMS device includes a substrate side electrode and a beam having a driving side electrode driven by electrostatic attraction force or electrostatic repulsion force that acts between the substrate side electrode and driving side electrode, in which the substrate side electrode is formed of an impurities-doped conductive semiconductor region in a semiconductor substrate.

    摘要翻译： 提供一种静电驱动型MEMS器件及其制造方法，其中，使驱动侧电极的表面变平，提高性能，进一步提高制造工艺中的设计自由度的提高。 此外，提供了使用该MEMS器件的GLV器件，并且还提供使用该GLV器件的激光器显示器。 静电驱动型MEMS器件包括基板侧电极和具有由基板侧电极和驱动侧电极之间作用的静电吸引力或静电排斥力驱动的驱动侧电极的光束，其中基板侧电极由 半导体衬底中的杂质掺杂导电半导体区域。

    MEMS element, GLV device, and laser display
    32.
    发明授权
    MEMS element, GLV device, and laser display 失效
    MEMS元件，GLV器件和激光显示器

    公开(公告)号：US07016099B2

    公开(公告)日：2006-03-21

    申请号：US10189416

    申请日：2002-07-08

    申请人： Koichi Ikeda ,  Takashi Shimada

    发明人： Koichi Ikeda ,  Takashi Shimada

    IPC分类号： G02B26/00

    CPC分类号： G02B26/0841 ,  G02B26/0808

    摘要： A MEMS element is constituted as a light modulation element for constituting a GLV device, and it has the same constitution as a conventional MEMS element except for differing in the structure of a bridge member of a membrane. The membrane comprises SiN film of, for example, 100 nm in thickness laminated thereon, and a combined light reflective film and membrane-side electrode composed of an Al film of 100 nm in thickness provided on the bridge member. The SiO2 film may be a SiO2 film formed by thermal oxidation of a sacrificing layer formed of polysilicon or may be a SiO2 film formed by a CVD method or a PVD method.

    摘要翻译： MEMS元件构成为用于构成GLV器件的光调制元件，除了膜的桥接元件的结构不同之外，其具有与传统的MEMS元件相同的结构。 膜包括例如层压在其上100nm厚度的SiN膜，以及组合的光反射膜和由在桥构件上设置的厚度为100nm的Al膜组成的膜侧电极。 SiO 2膜可以是通过由多晶硅形成的牺牲层的热氧化形成的SiO 2膜，或者可以是形成的SiO 2膜 通过CVD法或PVD法。

    Method for manufacturing high chromium system seamless steel pipe
    34.
    发明授权
    Method for manufacturing high chromium system seamless steel pipe 有权
    高铬无缝钢管制造方法

    公开(公告)号：US06692592B2

    公开(公告)日：2004-02-17

    申请号：US10361555

    申请日：2003-02-11

    申请人： Shigeru Kidani ,  Koichi Ikeda ,  Toshiharu Abe

    发明人： Shigeru Kidani ,  Koichi Ikeda ,  Toshiharu Abe

    IPC分类号： C21D810

    CPC分类号： C22C38/44 ,  C21D8/105 ,  C21D9/08 ,  C22C38/24 ,  C22C38/46 ,  C22C38/58

    摘要： A method for manufacturing a high Cr system seamless steel pipe having a high inside surface quality with a high efficiency and at a reduced production cost is provided. An initial material including Cr at a content of 10 to 20%, and impurities S and P at respective contents of not more than 0.050% is used to form a finished pipe, and when using parameters, the total soaking period &Sgr;t1 (hours) for soaking the initial material to form a primary pipe material as a billet or bloom and the total soaking period &Sgr;t2 (hours) for soaking the primary pipe material, a finished pipe is formed at a heating temperature of 1,200° C. under the condition that the following equation (b) is satisfied: F = f + 0.6 × ( 1 - 1 e ∑   ⁢ t1 ) + 0.8 × ( 1 - 1 e ∑ t2 ) > - 9.7 ( b ) where f is a factor indicating the degree of generating the &dgr; ferrites in accordance with the contents of elements included therein. The method allows a high Cr system seamless steel pipe having a very small amount of inside surface defects to be formed, using a high Cr steel. Since a predetermined productivity can be attained without any excessive addition of impurities, a high Cr system seamless steel pipe having a high inside surface quality can be produced with a high efficiency.

    摘要翻译： 提供了一种以高效率和降低生产成本制造具有高内表面质量的高Cr系无缝钢管的方法。 使用包含Cr含量为10〜20％的初始材料，以及含量不大于0.050％的杂质S和P，以形成成品管，当使用参数时，总浸泡时间Sigmat1（小时）为 浸泡初始材料以形成作为坯料或坯料的主管材料，以及用于浸泡主管材料的总浸渍时间Sigmat2（小时），在1200℃的加热温度下形成成品管，条件是 满足以下等式（b）：其中f是指示根据其中包括的元素的内容产生δ铁素体的程度的因子。 该方法允许使用高Cr钢形成具有非常少量的内表面缺陷的高Cr系无缝钢管。 由于可以在没有任何过量添加杂质的情况下实现预定的生产率，所以可以高效率地制造具有高内表面质量的高Cr系无缝钢管。

    Micromachine and production method thereof
    38.
    发明授权
    Micromachine and production method thereof 失效
    微机械及其制造方法

    公开(公告)号：US07875940B2

    公开(公告)日：2011-01-25

    申请号：US11530774

    申请日：2006-09-11

    申请人： Masahiro Tada ,  Takashi Kinoshita ,  Takeshi Taniguchi ,  Koichi Ikeda

    发明人： Masahiro Tada ,  Takashi Kinoshita ,  Takeshi Taniguchi ,  Koichi Ikeda

    IPC分类号： H01L29/82

    CPC分类号： H03H3/0076 ,  H03H9/2463 ,  H03H9/462 ,  H03H2009/02511

    摘要： A micromachine for a high-frequency filter which has a high Q value and a higher frequency band is provided. The micromachine includes an electrode provided on a substrate, an inter-layer insulation film composed of a first insulation film and a second insulation film which are provided on the substrate in the state of covering the electrode, a hole pattern provided in the second insulation film in the state of reaching the electrode, and a belt-like vibrator electrode provided on the second insulation film so as to cross the upper side of a space portion constituted of the inside of the hole pattern.

    摘要翻译： 提供了具有高Q值和较高频带的高频滤波器的微加工机。 微机械包括设置在基板上的电极，由覆盖电极的状态设置在基板上的由第一绝缘膜和第二绝缘膜构成的层间绝缘膜，设置在第二绝缘膜中的孔图案 在到达电极的状态下，以及设置在第二绝缘膜上的带状振动电极，以跨越由孔图案的内部构成的空间部分的上侧。

    Curable composition, varnish and laminate
    40.
    发明申请
    Curable composition, varnish and laminate 有权
    可固化组合物，清漆和层压板

    公开(公告)号：US20070060674A1

    公开(公告)日：2007-03-15

    申请号：US11598766

    申请日：2006-11-14

    申请人： Yasuhiro Wakizaka ,  Toshiyasu Matsui ,  Daisuke Uchida ,  Koichi Ikeda

    发明人： Yasuhiro Wakizaka ,  Toshiyasu Matsui ,  Daisuke Uchida ,  Koichi Ikeda

    IPC分类号： C08K5/52

    CPC分类号： H05K3/285 ,  C09D5/18 ,  H05K3/4676 ,  H05K2201/012 ,  Y10S428/901 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31529

    摘要： A curable composition comprises an insulating resin and a halogen-free flame retardant. The halogen-free flame retardant has a particulate form, and whose primary particles have an average major axis from 0.01 to 5 μm, an aspect ratio of 5 or less, and the proportion of a major axis of more than 10 μm being at most 10% by number. A varnish comprises an insulating resin, a curing agent, a flame retardant and an organic solvent. The flame retardant is a flame retardant in particulate form surface-treated with a coupling agent, and the flame retardant particles present in the varnish have a secondary particle diameter of 30 μm or less.

    摘要翻译： 可固化组合物包含绝缘树脂和无卤阻燃剂。 无卤阻燃剂具有颗粒形式，其一次颗粒的平均长轴为0.01至5μm，纵横比为5或更小，长径大于10μm的长度比例至多为10 ％的数量。 清漆包括绝缘树脂，固化剂，阻燃剂和有机溶剂。 阻燃剂是用偶联剂表面处理的颗粒形式的阻燃剂，并且存在于清漆中的阻燃颗粒的二次粒径为30μm以下。