摘要:
An EUV light source is disclosed which may comprise a plurality of targets, e.g., tin droplets, and a system generating pre-pulses and main-pulses with the pre-pulses for irradiating targets to produce expanded targets. The system may further comprise a continuously pumped laser device generating the main pulses with the main pulses for irradiating expanded targets to produce a burst of EUV light pulses. The system may also have a controller varying at least one pre-pulse parameter during the burst of EUV light pulses. In addition, the EUV light source may also include an instrument measuring an intensity of at least one EUV light pulse within a burst of EUV light pulses and providing a feedback signal to the controller to vary at least one pre-pulse parameter during the burst of EUV light pulses to produce a burst of EUV pulses having a pre-selected dose.
摘要:
A reflective EUV optic such as a collector mirror configured as an array of facets that are spaced apart to form respective gaps between adjacent facets. The gaps are used as inlets for gas flow across one of the facets such that flow is introduced parallel to the optic surface. The facets can be made with offsets such that loss of reflective area of the EUV optic can be minimized. The gas facilitates removal of target material from the surface of the facets.
摘要:
A laser light source is disclosed having a laser oscillator producing an output beam; a first amplifier amplifying the output beam to produce a first amplified beam, and a second amplifier amplifying the first amplified beam to produce a second amplified beam. For the source, the first amplifier may have a gain medium characterized by a saturation energy (Es, 1) and a small signal gain (go, 1); and the second amplifier may have a gain medium characterized by a saturation energy (Es, 2) and a small signal gain (go, 2), with (go, 1)>(go, 2) and (Es, 2)>(Es, 1). In another aspect, a laser oscillator of a laser light source may be a cavity dumped laser oscillator, e.g. a mode-locked laser oscillator, q-switched laser oscillator and may further comprising a temporal pulse stretcher.
摘要:
A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps/acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps/acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.
摘要:
A spectral purity filter arrangement is disclosed. The spectral purity filter arrangement includes a film configured for filtering out at least a portion of input light and a support structure coupled to the film along at least one edge of the film. The spectral purity filter arrangement further includes a gas control subsystem configured to direct a gas at the film to support the film at least when the film is disposed in an operational position to perform the filtering.
摘要:
A spectral purity filter arrangement is disclosed. The spectral purity filter arrangement includes a film configured for filtering out at least a portion of input light and a support structure coupled to the film along at least one edge of the film. The spectral purity filter arrangement further includes a gas control subsystem configured to direct a gas at the film to support the film at least when the film is disposed in an operational position to perform the filtering.
摘要:
A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps/acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps/acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.
摘要:
An EUV light source is disclosed which may comprise a plurality of targets, e.g., tin droplets, and a system generating pre-pulses and main-pulses with the pre-pulses for irradiating targets to produce expanded targets. The system may further comprise a continuously pumped laser device generating the main pulses with the main pulses for irradiating expanded targets to produce a burst of EUV light pulses. The system may also have a controller varying at least one pre-pulse parameter during the burst of EUV light pulses. In addition, the EUV light source may also include an instrument measuring an intensity of at least one EUV light pulse within a burst of EUV light pulses and providing a feedback signal to the controller to vary at least one pre-pulse parameter during the burst of EUV light pulses to produce a burst of EUV pulses having a pre-selected dose.
摘要:
An EUV light source is disclosed which may comprise at least one optical element having a surface, such as a multi-layer collector mirror; a laser source generating a laser beam; and a source material irradiated by the laser beam to form a plasma and emit EUV light. In one aspect, the source material may consist essentially of a tin compound and may generate tin debris by plasma formation which deposits on the optical element and, in addition, the tin compound may include an element that is effective in etching deposited tin from the optical element surface. Tin compounds may include SnBr4, SnBr2 and SnH4. In another aspect, an EUV light source may comprise a molten source material irradiated by a laser beam to form a plasma and emit EUV light, the source material comprising tin and at least one other metal, for example tin with Gallium and/or Indium.
摘要:
An extreme-ultraviolet (EUV) light source comprising an optic, a target material, and a laser beam passing through said optic along a beam path to irradiate said target material. The EUV light source further includes a system generating a gas flow directed toward said target material along said beam path, said system having a tapering member surrounding a volume and a plurality of gas lines, each gas line outputting a gas stream into said volume.