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    SYSTEMS AND METHODS FOR BUFFER GAS FLOW STABILIZATION IN A LASER PRODUCED PLASMA LIGHT SOURCE
    2.
    发明申请
    SYSTEMS AND METHODS FOR BUFFER GAS FLOW STABILIZATION IN A LASER PRODUCED PLASMA LIGHT SOURCE 有权
    激光产生的等离子体光源中缓冲气体流动稳定的系统和方法

    公开(公告)号：US20120313016A1

    公开(公告)日：2012-12-13

    申请号：US13156188

    申请日：2011-06-08

    申请人： Vladimir B. Fleurov ,  William N. Partlo ,  Igor V. Fomenkov ,  Alexander I. Ershov

    发明人： Vladimir B. Fleurov ,  William N. Partlo ,  Igor V. Fomenkov ,  Alexander I. Ershov

    IPC分类号： G21K5/00

    CPC分类号： H05G2/005 ,  H05G2/008

    摘要： An extreme-ultraviolet (EUV) light source comprising an optic, a target material, and a laser beam passing through said optic along a beam path to irradiate said target material. The EUV light source further includes a system generating a gas flow directed toward said target material along said beam path, said system having a tapering member surrounding a volume and a plurality of gas lines, each gas line outputting a gas stream into said volume.

    摘要翻译： 一种极紫外（EUV）光源，包括光学元件，目标材料和沿着光束路径通过所述光学元件以照射所述目标材料的激光束。 EUV光源还包括沿着所述光束路径产生朝向所述目标材料的气流的系统，所述系统具有包围体积和多条气体管线的锥形构件，每条气体管线将气流输送到所述体积中。

    EUV collector debris management
    8.
    发明授权
    EUV collector debris management 失效
    EUV收集器碎片管理

    公开(公告)号：US08075732B2

    公开(公告)日：2011-12-13

    申请号：US10979945

    申请日：2004-11-01

    申请人： William N. Partlo ,  Richard L. Sandstrom ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  William Oldham ,  William F. Marx ,  Oscar Hemberg

    发明人： William N. Partlo ,  Richard L. Sandstrom ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  William Oldham ,  William F. Marx ,  Oscar Hemberg

    IPC分类号： C23F1/00

    CPC分类号： B08B7/00

    摘要： A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.

    摘要翻译： 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置，所述EUV等离子体源材料包括将形成蚀刻化合物的材料，所述等离子体源材料在所选择的中心波长周围的带内产生EUV光，包括：EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面，该反射表面包含至少一层，该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料，等离子体源材料与蚀刻剂源材料形成蚀刻化合物，该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。

    Laser system
    10.
    发明授权
    Laser system 有权
    激光系统

    公开(公告)号：US07746913B2

    公开(公告)日：2010-06-29

    申请号：US11981449

    申请日：2007-10-30

    申请人： Alexander I. Ershov ,  William N. Partlo ,  Daniel J. W. Brown ,  Igor V. Fomenkov ,  Robert A. Bergstedt

    发明人： Alexander I. Ershov ,  William N. Partlo ,  Daniel J. W. Brown ,  Igor V. Fomenkov ,  Robert A. Bergstedt

    IPC分类号： H01S3/22

    CPC分类号： H01S3/2333 ,  G03F7/70025 ,  G03F7/70041 ,  G03F7/70558 ,  G03F7/70583 ,  H01S3/005 ,  H01S3/08 ,  H01S3/08059 ,  H01S3/105 ,  H01S3/2251 ,  H01S3/235 ,  H01S3/2366

    摘要： An apparatus/method which may comprise a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may comprise a seed laser oscillator producing an output comprising a seed laser output light beam of pulses which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module within a first oscillator cavity; a laser amplification stage containing an amplifying gain medium in a second gas discharge excimer or molecular fluorine laser chamber receiving the output of the seed laser oscillator and amplifying the output of the seed laser oscillator to form a laser system output comprising a laser system output light beam of pulses, which may comprise a ring power amplification stage; a seed injection mechanism.

    摘要翻译： 可以包括线变窄的脉冲准分子或分子氟气体放电激光系统的装置/方法，其可以包括种子激光振荡器，其产生包括种子激光输出的脉冲光束的输出，所述种子激光输出光束可以包括第一气体放电准分子或分子氟激光 房间 第一振荡器腔内的线窄模块; 在第二气体放电准分子或分子氟激光室中包含放大增益介质的激光放大级，其接收种子激光振荡器的输出并放大种子激光振荡器的输出，以形成激光系统输出，该激光系统输出包括激光系统输出光束 的脉冲，其可以包括环形功率放大级; 种子注射机制。