APPARATUS AND TECHNIQUES FOR ANGLED ETCHING USING MULTIELECTRODE EXTRACTION SOURCE

    公开(公告)号:US20200185201A1

    公开(公告)日:2020-06-11

    申请号:US16682888

    申请日:2019-11-13

    Abstract: A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane.

    SYSTEM AND METHOD FOR FORMING SURFACE RELIEF GRATINGS

    公开(公告)号:US20200150325A1

    公开(公告)日:2020-05-14

    申请号:US16228205

    申请日:2018-12-20

    Abstract: Optical grating components and methods of forming are provided. In some embodiments, a method includes providing a substrate, and etching a plurality of trenches into the substrate to form an optical grating. The optical grating may include a plurality of angled trenches, wherein a depth of a first trench of the plurality of trenches varies between at least one of the following: a first lengthwise end of the first trench and a second lengthwise end of the first trench, and between a first side of the first trench and a second side of the first trench.

    Apparatus and techniques for angled etching using multielectrode extraction source

    公开(公告)号:US11967489B2

    公开(公告)日:2024-04-23

    申请号:US17514657

    申请日:2021-10-29

    Abstract: A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane.

    Modulation of ion beam angle
    38.
    发明授权

    公开(公告)号:US11367589B2

    公开(公告)日:2022-06-21

    申请号:US16705159

    申请日:2019-12-05

    Abstract: Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material.

    METHODS OF PRODUCING SLANTED GRATINGS WITH VARIABLE ETCH DEPTHS

    公开(公告)号:US20210141131A1

    公开(公告)日:2021-05-13

    申请号:US17072261

    申请日:2020-10-16

    Abstract: Methods of producing gratings with trenches having variable height are provided. In one example, a method of forming a diffracted optical element may include providing an optical grating layer over a substrate, patterning a hardmask over the optical grating layer, and forming a sacrificial layer over the hardmask, the sacrificial layer having a non-uniform height measured from a top surface of the optical grating layer. The method may further include etching a plurality of angled trenches into the optical grating layer to form an optical grating, wherein a first depth of a first trench of the plurality of trenches is different than a second depth of a second trench of the plurality of trenches.

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