Abstract:
A scanning transmission electron microscope is adapted to acquire high quality precession electron diffraction (PED) patterns by means of separated scanning deflectors and precession deflectors. Magnetic or electrostatic deflectors may be used for scanning and for precession. This enables independent optimization of parameters for each deflection system to achieve a broad operating range simultaneously for both deflection systems.
Abstract:
Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material.
Abstract:
In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.
Abstract:
There is provided a charged particle beam apparatus that includes a trajectory monitoring unit which is disposed above an objective lens (14) and which includes an optical element (12) having a lens action and a trajectory correcting deflector (10). An applied voltage and an excitation current of the optical element (12) are set to zero after a trajectory correction of a primary charged particle beam (30). Accordingly, the lens action and an aberration of the optical element (12) have no influence on resolution.
Abstract:
A technique for ion beam angle spread control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles, thereby exposing the substrate surface to a controlled spread of ion beam incident angles.
Abstract:
Systems and methods of imaging a sample using a tilted charged-particle beam. The apparatus may comprise a first deflector located between the charged-particle source and an objective lens and configured to deflect the charged-particle beam away from the primary optical axis; a second deflector located substantially at a focal plane of the objective lens and configured to deflect the charged-particle beam back towards the primary optical axis; and a third deflector located substantially at a principal plane of the objective lens, wherein the third deflector is configured to shift a wobbling center of the objective lens to an off-axis wobbling location, and wherein the first and the second deflectors are configured to deflect the charged-particle beam to pass through the off-axis wobbling location to land on a surface of a sample at a first landing location and having a beam-tilt angle.
Abstract:
A method and system are disclosed for improving characteristic peak signals in electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS) measurements of crystalline materials. A beam scanning protocol is applied which varies the inclination, azimuthal angle, or a combination thereof of the incident beam while spectroscopic data is acquired. The method and system may be applied to compositional mapping.
Abstract:
The invention relates to a method and apparatus for measuring The landing angle of a particle beam is adjusted by scanning the beam over two cylindrical beam target surfaces that are positioned close to the system axis. The output of a beam detector is differentiated and displayed on an oscilloscope. The relevant lens current is adjusted until one side of the scan indicates that the focal plane of the beam is at the center of the beam target. The angle of the beam is then adjusted with the relevant deflector until both sides of the scan are the same, indicating that the beam is accurately vertical.
Abstract:
A dynamic correction arrangement for an electron beam projection/deflection system provides high order correction values for deflection in accordance with a correction equation. Particularly as applied to high accuracy telecentric deflection, the coefficients of terms of the correction equation may be determined by calibration for a small number of test points. Correction values may be stored in a look-up table or computed in real time by using a math co-processor in a processing pipeline. The correction provided corrects landing angle errors through the third order in telecentric projection/deflection systems such as systems utilizing variable axis immersion lenses.
Abstract:
Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material.