METHODS FOR DETECTING ARCING IN POWER DELIVERY SYSTEMS FOR PROCESS CHAMBERS

    公开(公告)号:US20220406581A1

    公开(公告)日:2022-12-22

    申请号:US17351355

    申请日:2021-06-18

    Abstract: Methods for detecting arcs in power delivery systems for plasma process chambers leverage visible arc detection sensors to facilitate in locating the arc and shutting down a power source associated with arc location. In some embodiments, the method includes receiving an arc indication from an arc detection sensor operating in a visible light spectrum where the at least one arc detection sensor is positioned in an assembly of a power delivery system for a plasma process chamber, determining a location of the arc indication by an arc detection controller of the plasma process chamber, and activating a safety interlock signal to the power source of the power delivery system of the plasma process chamber when the at least one arc indication exceeds a threshold value. The safety interlock signal controls a power status of the power source and activating the safety interlock signal removes power source power.

    CARBON HARD MASKS FOR PATTERNING APPLICATIONS AND METHODS RELATED THERETO

    公开(公告)号:US20210043449A1

    公开(公告)日:2021-02-11

    申请号:US17045453

    申请日:2019-04-08

    Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

    PULSED PLASMA (DC/RF) DEPOSITION OF HIGH QUALITY C FILMS FOR PATTERNING

    公开(公告)号:US20210040618A1

    公开(公告)日:2021-02-11

    申请号:US16982955

    申请日:2018-10-16

    Abstract: Embodiments of the present disclosure relate to methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a plasma-enhanced chemical vapor deposition (PECVD) process, in particular, the methods described herein utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with power to create a plasma which deposits an amorphour carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon. The methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer. As a result of the higher sp3 carbon fraction, the methods described herein provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.

    IN-SITU ELECTRIC FIELD DETECTION METHOD AND APPARATUS

    公开(公告)号:US20240426888A1

    公开(公告)日:2024-12-26

    申请号:US18829028

    申请日:2024-09-09

    Abstract: Disclosed herein is an electric field measurement system that includes a light source, a light sensor configured to receive electromagnetic energy transmitted from the light source, an electro-optic sensor, and a controller. The electro-optic sensor include a package comprising an electro-optic crystal disposed and at least one optical fiber. The optical fiber is configured to transmit electromagnetic energy transmitted from the light source to a surface of the electro-optic crystal, and transmit at least a portion of the electromagnetic energy transmitted to the surface of the electro-optic crystal and subsequently passed through at least a portion of the electro-optic crystal to the light sensor that is configured to generate a signal based on an attribute of the electromagnetic energy received by the light sensor from the at least one optical fiber. The controller is configured to generate a command signal based on a signal received from the light sensor.

    FAST TUNING RADIO FREQUENCY (RF) MATCHING NETWORK

    公开(公告)号:US20240371605A1

    公开(公告)日:2024-11-07

    申请号:US18144156

    申请日:2023-05-05

    Abstract: Some embodiments are directed to a tuning circuit. The tuning circuit generally includes: a first impedance; a second impedance coupled to the first impedance; a transformer having a primary winding and a secondary winding magnetically coupled to the primary winding, wherein the primary winding is coupled to a control input for the tuning circuit; and a signal path coupled in parallel with the first impedance or the second impedance, wherein the secondary winding is part of the signal path coupled in parallel with the first impedance or the second impedance.

    LEARNING BASED TUNING IN A RADIO FREQUENCY PLASMA PROCESSING CHAMBER

    公开(公告)号:US20240194447A1

    公开(公告)日:2024-06-13

    申请号:US18076725

    申请日:2022-12-07

    CPC classification number: H01J37/32183 H01J37/32128 H01J37/32146

    Abstract: Some embodiments are directed to a method of processing a substrate in a plasma processing system. The method generally includes tuning a first capacitor and a second capacitor of a tuning circuit to match a first impedance corresponding to a first stage of a waveform, while a frequency of a radio frequency (RF) generator is preset to a first frequency; tuning a third capacitor of the tuning circuit and the frequency of the RF generator to match a second impedance corresponding to a second stage of the waveform, wherein the frequency of the RF generator is tuned to a second frequency; recording setting values of the first frequency and the second frequency that match different impedances at different stages of the waveform; and switching between the first frequency and the second frequency to match the different impedances at the different stages of the waveform.

    GAS DISTRIBUTION PLATE WITH UV BLOCKER

    公开(公告)号:US20230102933A1

    公开(公告)日:2023-03-30

    申请号:US17892211

    申请日:2022-08-22

    Abstract: Apparatus for processing substrates can include a gas distribution plate that includes an upper plate and a lower plate and a solid disk between the upper plate and the lower plate. Each of the upper plate and the lower plate has a central region and an outer region surrounding the central region, the central region being solid and the outer region having a plurality of through holes. The upper plate and the lower plate are coaxially aligned along a central axis extending through a center of the central region of the upper plate and a center of the central region of the lower plate. The solid disk is coaxially aligned with the upper plate and the lower plate. The solid disk is configured to block transmission of ultraviolet radiation through the solid disk.

    Pulsed Voltage Boost For Substrate Processing

    公开(公告)号:US20220415614A1

    公开(公告)日:2022-12-29

    申请号:US17361178

    申请日:2021-06-28

    Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for boosting a voltage of an electrode in a processing chamber. An example plasma processing system includes a processing chamber, a plurality of switches, an electrode disposed in the processing chamber, a voltage source, and a capacitive element. The voltage source is selectively coupled to the electrode via one of the plurality of switches. The capacitive element is selectively coupled to the electrode via one of the plurality of switches. The capacitive element and the voltage source are coupled to the electrode in parallel. The plurality of switches are configured to couple the capacitive element and the voltage source to the electrode during a first phase, couple the capacitive element and the electrode to a ground node during a second phase, and couple the capacitive element to the electrode during a third phase.

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