公开(公告)号：US20210043450A1

公开(公告)日：2021-02-11

申请号：US17069008

申请日：2020-10-13

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/311 ,  H01J37/32

Abstract: Techniques for deposition of high-density dielectric films for patterning applications are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.1 mTorr and about 10 Torr. A plasma is generated at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a dielectric film on the substrate. The dielectric film has a refractive index in a range of about 1.5 to about 3.

公开(公告)号：US10854511B2

公开(公告)日：2020-12-01

申请号：US16000431

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Xinliang Lu ,  Srinivas Gandikota ,  Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/336 ,  H01L21/768 ,  H01L21/28 ,  H01L21/763 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/285 ,  G11C8/14

Abstract: Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.

公开(公告)号：US10790141B2

公开(公告)日：2020-09-29

申请号：US15755428

申请日：2016-09-15

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  H01L21/285 ,  H01L21/306 ,  H01L21/768 ,  C23C16/455 ,  H01L21/32

Abstract: Methods for selectively depositing films by atomic layer deposition are disclosed. Substrate surfaces are passivated by hydrosilylation to prevent deposition and allow selective deposition on unpassivated surfaces.

公开(公告)号：US20200227265A1

公开(公告)日：2020-07-16

申请号：US16836858

申请日：2020-03-31

Applicant: Applied Materials, Inc.

Inventor： Swaminathan Srinivasan ,  Abhijit Basu Mallick ,  Nicolas Breil

IPC: H01L21/285 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/28 ,  C23C16/04 ,  C23C14/04

Abstract: Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.

公开(公告)号：US10559465B2

公开(公告)日：2020-02-11

申请号：US15988771

申请日：2018-05-24

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Yi Yang ,  Yihong Chen ,  Karthik Janakiraman ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/205 ,  H01L21/033 ,  H01L21/3205 ,  H01L21/308 ,  H01L21/311

Abstract: In one implementation, a method of forming an amorphous silicon layer on a substrate in a processing chamber is provided. The method comprises depositing a predetermined thickness of a sacrificial dielectric layer over a substrate. The method further comprises forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate. The method further comprises performing a plasma treatment to the patterned features. The method further comprises depositing an amorphous silicon layer on the patterned features and the exposed upper surface of the substrate. The method further comprises selectively removing the amorphous silicon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the amorphous silicon layer.

公开(公告)号：US20200040448A1

公开(公告)日：2020-02-06

申请号：US16597526

申请日：2019-10-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick

IPC: C23C16/14 ,  C23C16/455 ,  H01L21/285

Abstract: A method of forming conformal amorphous metal films is disclosed. A method of forming crystalline metal films with a predetermined orientation is also disclosed. An amorphous nucleation layer is formed on a substrate surface. An amorphous metal layer is formed from the nucleation layer by atomic substitution. A crystalline metal layer is deposited on the amorphous metal layer by atomic layer deposition.

公开(公告)号：US20190287807A1

公开(公告)日：2019-09-19

申请号：US16429573

申请日：2019-06-03

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/285 ,  H01L21/321 ,  H01L21/02 ,  H01L21/32

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include depositing a second metal on a first metal without protecting the dielectric, protecting the metal with a cross-linked self-assembled monolayer and depositing a second dielectric on the first dielectric while the metal is protected.

公开(公告)号：US20190271071A1

公开(公告)日：2019-09-05

申请号：US16123437

申请日：2018-09-06

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick

IPC: C23C16/14 ,  H01L21/285 ,  C23C16/455

Abstract: A method of forming conformal amorphous metal films is disclosed. A method of forming crystalline metal films with a predetermined orientation is also disclosed. An amorphous nucleation layer is formed on a substrate surface. An amorphous metal layer is formed from the nucleation layer by atomic substitution. A crystalline metal layer is deposited on the amorphous metal layer by atomic layer deposition.

公开(公告)号：US20190189456A1

公开(公告)日：2019-06-20

申请号：US16219328

申请日：2018-12-13

Applicant: Applied Materials, Inc.

Inventor： Amrita B. Mullick ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Susmit Singha Roy ,  Yingli Rao ,  Regina Freed ,  Uday Mitra

IPC: H01L21/306 ,  H01L21/02

CPC classification number: H01L21/306 ,  H01L21/02068

Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.

公开(公告)号：US10319604B2

公开(公告)日：2019-06-11

申请号：US15805764

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Yihong Chen ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/321 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3213

Abstract: Processing methods comprising depositing a film on a substrate surface and in a surface feature with chemical planarization to remove the film from the substrate surface, leaving the film in the feature. A pillar is grown from the film so that the pillar grows orthogonally to the substrate surface.