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31.发明授权
公开(公告)号：US5866936A
公开(公告)日：1999-02-02
申请号：US831843
申请日：1997-04-01
IPC分类号： H01L21/22 , H01L31/00 , H01L31/107 , H01L29/861
CPC分类号： H01L31/1075
摘要： A mesa-structure avalanche photodiode in which a buffer region in the surface of the mesa structure effectively eliminates the sharply-angled, heavily doped part of the cap layer that existed adjacent the lightly-doped n-type multiplication layer and p-type guard ring before the buffer region was formed. This reduces electric field strength at the ends of the planar epitaxial P-N junction and prevents edge breakdown in this junction. The lateral extent of the guard ring is defined by a window formed in a masking layer prior to regrowth of the guard ring. This guard ring structure eliminates the need to perform additional processing steps to define the lateral extent of the guard ring and passivate the periphery of the guard ring.
摘要翻译： 台面结构雪崩光电二极管，其中台面结构表面中的缓冲区域有效地消除了存在于轻掺杂n型倍增层和p型保护环附近的覆盖层的锐角重掺杂部分 在缓冲区形成之前。 这降低了在平面外延P-N结的端部处的电场强度，并防止在该结中的边缘击穿。 保护环的横向范围由在保护环的再生长之前在掩模层中形成的窗口限定。 该保护环结构消除了进行附加处理步骤以限定保护环的横向范围并钝化保护环的周边的需要。
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公开(公告)号：US5225369A
公开(公告)日：1993-07-06
申请号：US787300
申请日：1991-11-04
IPC分类号： H01L29/88
CPC分类号： H01L29/88 , Y10S438/979
摘要： A tunnel diode is disclosed having a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on a semi-insulating substrate of indium phosphide. In an alternative embodiment, a tunnel diode is disclosed which has a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on an N-doped substrate.
摘要翻译： 公开了一种隧道二极管，其具有形成在铟镓砷的高N掺杂层上的高P掺杂的砷化铟镓层，其被支撑在磷化铟的半绝缘衬底上。 在替代实施例中，公开了一种隧道二极管，其具有形成在支撑在N掺杂衬底上的铟镓砷化物的高N掺杂层上的高掺杂砷化铟镓层。
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33.发明授权公开(公告)号：US09620934B2
公开(公告)日：2017-04-11
申请号：US12873144
申请日：2010-08-31
申请人： Chung-Yi Su , Tak K. Wang
发明人： Chung-Yi Su , Tak K. Wang
CPC分类号： H01S5/423 , H01L2224/73204 , H01L2224/97 , H01S5/0224 , H01S5/02252 , H01S5/02272 , H01S5/02276 , H01S5/02284
摘要： A known flip-chip assembly manufacturing process is augmented by process steps of the invention to create a VCSEL flip-chip assembly comprising a plurality of semiconductor devices having respective arrays of a small number of VCSELs thereon, which are mounted on a substrate to form a large array of VCSELs that are precisely optically aligned with their respective optical coupling elements.
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公开(公告)号：US08938136B2
公开(公告)日：2015-01-20
申请号：US13569364
申请日：2012-08-08
申请人： Chung-Yi Su , Tak Kui Wang
发明人： Chung-Yi Su , Tak Kui Wang
CPC分类号： G02B6/428 , G02B6/4206 , G02B6/4244 , G02B6/4245 , G02B6/425 , G02B6/4269 , H01L31/024
摘要： An opto-electronic system includes a system substrate, a lens, a bridging device, and an opto-electronic chip mounted in a cavity in the system substrate. The bridging device, which can be another chip, a lens block, or an interposer, is mounted in flip-chip orientation to the opto-electronic chip and provides electrical interconnection with signal conductors of the system substrate.
摘要翻译： 光电系统包括系统基板，透镜，桥接装置和安装在系统基板中的空腔中的光电芯片。 可以是另一芯片，透镜块或插入件的桥接装置以倒装芯片方向安装到光电芯片，并提供与系统基板的信号导体的电互连。
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公开(公告)号：US08422337B2
公开(公告)日：2013-04-16
申请号：US12840384
申请日：2010-07-21
申请人： Chung-Yi Su , Yi-Chung Lee
发明人： Chung-Yi Su , Yi-Chung Lee
IPC分类号： H04B1/06
CPC分类号： H04B11/00
摘要： An ultrasonic system including an ultrasonic transmitter and an ultrasonic receiver is provided. The ultrasonic transmitter emits a transmission signal, which includes a synchronous burst and multiple data bursts. The ultrasonic receiver receives a synchronous echo, and determines whether the amplitude of the synchronous echo is larger than a first threshold. If the amplitude of the synchronous echo is larger than the first threshold, then the ultrasonic receiver interprets the multiple data echoes corresponding to the data bursts to obtain a digital signal.
摘要翻译： 提供了包括超声波发射器和超声波接收器的超声波系统。 超声波发射器发射包括同步突发和多个数据突发的传输信号。 超声波接收机接收同步回波，并确定同步回波的振幅是否大于第一阈值。 如果同步回波的振幅大于第一阈值，则超声波接收机解释对应于数据脉冲串的多个数据回波以获得数字信号。
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公开(公告)号：US08403568B2
公开(公告)日：2013-03-26
申请号：US12815643
申请日：2010-06-15
申请人： Tak Kui Wang , Ronald T. Kaneshiro , Chung-Yi Su , Craig T. Cummings , Ye Chen , Bing Shao
发明人： Tak Kui Wang , Ronald T. Kaneshiro , Chung-Yi Su , Craig T. Cummings , Ye Chen , Bing Shao
CPC分类号： G02B6/3817
摘要： In a connector system, a first connector is mechanically and optically mateable with a second connector to form one or more optical signal communication links. A wiping cleaner is included on at least one of the first and second connectors for cleaning an optical port of the other of the first and second connectors when the connectors are plugged together. The first and second connectors can further be electrically mateable to provide both optical and electrical signal communication links.
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37.发明申请FLIP-CHIP ASSEMBLY COMPRISING AN ARRAY OF VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELSs) 有权包含垂直孔表面发射激光器（VCSELS）的阵列的片状芯片组件公开(公告)号：US20120051685A1
公开(公告)日：2012-03-01
申请号：US12873144
申请日：2010-08-31
申请人： Chung-Yi Su , Tak K. Wang
发明人： Chung-Yi Su , Tak K. Wang
CPC分类号： H01S5/423 , H01L2224/73204 , H01L2224/97 , H01S5/0224 , H01S5/02252 , H01S5/02272 , H01S5/02276 , H01S5/02284
摘要： A known flip-chip assembly manufacturing process is augmented by process steps of the invention to create a VCSEL flip-chip assembly comprising a plurality of semiconductor devices having respective arrays of a small number of VCSELs thereon, which are mounted on a substrate to form a large array of VCSELs that are precisely optically aligned with their respective optical coupling elements.
摘要翻译： 通过本发明的工艺步骤来增强已知的倒装芯片组件制造工艺，以创建VCSEL倒装芯片组件，其包括多个半导体器件，其具有其上少量VCSEL的相应阵列，其安装在衬底上以形成 与其各自的光耦合元件精确光学对准的大阵列VCSEL。
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38.发明授权公开(公告)号：US06258639B1
公开(公告)日：2001-07-10
申请号：US09316171
申请日：1999-05-21
IPC分类号： H01L21338
CPC分类号： H01L29/66462 , H01L21/28587 , H01L29/7783
摘要： A transistor structure with a degradation-stop layer that prevents degradation of underlying semiconductor layers while minimizing any increase in the gate leakage current is disclosed. In one embodiment, a transistor structure includes: a substrate; a channel layer formed of a charge transport material over the substrate; a Schottky barrier layer formed of an aluminum-containing material over the channel layer; a degradation-stop layer formed of a substantially aluminum-free material over the Schottky barrier layer; and a source, a drain and a gate. The source and the drain being formed over or alloyed through the degradation-stop layer, and a lower portion of the gate extends down through an exposed portion of the degradation-stop layer and is in physical and electrical contact with the Schottky barrier layer.
摘要翻译： 公开了具有降解停止层的晶体管结构，其防止下行半导体层的劣化，同时最小化栅极漏电流的任何增加。 在一个实施例中，晶体管结构包括：衬底; 在所述基板上形成由电荷输送材料形成的沟道层; 由沟道层上的含铝材料形成的肖特基势垒层; 由肖特基势垒层上的基本上不含铝的材料形成的降解停止层; 一个源头，一个排水沟和一个门。 源极和漏极在劣化阻挡层上形成或合金化，并且栅极的下部向下延伸通过降解停止层的暴露部分，并与肖特基势垒层物理和电接触。
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39.发明授权Method of making avalanche photodiodes with epitaxially-regrown guard rings 失效用外延再生长的防护环制造雪崩光电二极管的方法
公开(公告)号：US5843804A
公开(公告)日：1998-12-01
申请号：US812465
申请日：1997-03-06
IPC分类号： H01L31/107 , H01L31/18
CPC分类号： H01L31/1075
摘要： A SAM avalanche photodiode formed with an epitaxially regrown guard ring and a planar P-N junction defined between a cap layer and a multiplication layer. The multiplication layer is part of a multi-layer semiconductor platform having a conductivity opposite to the conductivity type of the cap layer, including a light absorption layer, a substrate and an intermediate layer. A second embodiment of the present invention is disclosed including a SAM avalanche photodiode having a guard ring with a variable distribution of impurity dopant concentrations. In addition, a third embodiment of the present invention is disclosed in which a narrow band gap layer completely covers the cap layer and a non-alloy metal contact is formed to completely cover the narrow band gap layer, forming a mirror junction. In this embodiment, incident light is shined through the substrate and reflected from the mirror junction, enhancing the absorption efficiency.
摘要翻译： SAM雪崩光电二极管形成有外延重新生长的保护环和在盖层和乘法层之间限定的平面P-N结。 倍增层是具有与覆盖层的导电类型相反的导电性的多层半导体平台的一部分，包括光吸收层，衬底和中间层。 公开了本发明的第二实施例，其包括具有杂质掺杂剂浓度可变分布的保护环的SAM雪崩光电二极管。 此外，公开了本发明的第三实施例，其中窄带隙层完全覆盖盖层，并且形成非合金金属接触以完全覆盖窄带隙层，形成镜结。 在本实施例中，入射光通过衬底照射并从镜结点反射，提高了吸收效率。
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公开(公告)号：US5093692A
公开(公告)日：1992-03-03
申请号：US612152
申请日：1990-11-09
IPC分类号： H01L29/88
CPC分类号： H01L29/88
摘要： A tunnel diode is disclosed having a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on a semi-insulating substrate of indium phosphide. In an alternative embodiment, a tunnel diode is disclosed which has a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on an N-doped substrate.
摘要翻译： 公开了一种隧道二极管，其具有形成在铟镓砷的高N掺杂层上的高P掺杂的砷化铟镓层，其被支撑在磷化铟的半绝缘衬底上。 在替代实施例中，公开了一种隧道二极管，其具有形成在支撑在N掺杂衬底上的铟镓砷化物的高N掺杂层上的高掺杂砷化铟镓层。
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