公开(公告)号：US20240049557A1

公开(公告)日：2024-02-08

申请号：US17764335

申请日：2021-03-22

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xueyan Tian ,  Chunyang Wang

IPC: H10K59/50 ,  H10K59/80 ,  H10K59/12

CPC classification number: H10K59/50 ,  H10K59/878 ,  H10K59/1201 ,  H10K2102/351

Abstract: A display substrate is provided. The display substrate includes: a base substrate; a light-emitting unit layer arranged on the base substrate, wherein the light-emitting unit layer includes a plurality of light-emitting units respectively emitting light of a plurality of colors; and a light modulation layer located on a side of the light-emitting unit layer away from the base substrate, and configured to transmit a part of the light emitted from the plurality of light-emitting units and reflect the other part of the light emitted from the plurality of light-emitting units; wherein the light modulation layer is configured such that a reflectivity of the light modulation layer to light in a first wavelength range is greater than that of the light modulation layer to light outside the first wavelength range, and the first wavelength range is within a wavelength range of visible light and is 500 nm or more.

公开(公告)号：US11664392B2

公开(公告)日：2023-05-30

申请号：US16337557

申请日：2018-10-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xueyan Tian ,  Shiming Shi ,  Shuangliang Qin

IPC: H01L27/12 ,  H01L29/786 ,  H10K59/126 ,  H01L27/32 ,  H01L51/56

CPC classification number: H01L27/1266 ,  H01L27/3272 ,  H01L29/78633 ,  H01L51/56 ,  H01L27/1218 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338

Abstract: A flexible array substrate, a manufacturing method thereof and a display device are provided. The flexible array substrate includes: a first flexible substrate with a first surface; a thin film transistor on the first surface; and a light-shielding layer between the first flexible substrate and the thin film transistor. An orthographic projection of the light-shielding layer on the first flexible substrate covers an orthographic projection of a channel region of the thin film transistor on the first flexible substrate.

公开(公告)号：US11581513B2

公开(公告)日：2023-02-14

申请号：US16941361

申请日：2020-07-28

Applicant: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenbo Li ,  Xueyan Tian

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/56

Abstract: The present disclosure provides a display substrate, a method for manufacturing the same, and a display device. The display substrate includes: a base substrate; a plurality of light emitting units on the base substrate, where the plurality of light emitting units include a plurality of pixel display areas; and a reflection layer on the base substrate. The reflection layer includes a plurality of patterns and a plurality of openings defined between adjacent patterns of the plurality of patterns, and positions of the plurality of openings are corresponding to positions of the plurality of pixel display areas.

公开(公告)号：US20200243607A1

公开(公告)日：2020-07-30

申请号：US16607186

申请日：2019-05-07

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xueyan Tian

IPC: H01L27/28 ,  G09G3/36 ,  H01L51/00 ,  H01L51/05 ,  H01L29/786 ,  H01L21/265 ,  H01L21/266 ,  H01L21/268 ,  H01L21/324 ,  H01L29/66 ,  G02F1/1368 ,  G02F1/1333

Abstract: A flexible display substrate for a foldable display apparatus, a method of manufacturing the flexible display substrate, and a foldable display apparatus are disclosed. The flexible display substrate includes: a first region corresponding to a non-foldable region of the foldable display apparatus; a second region corresponding to a foldable region of the foldable display apparatus; a plurality of first pixel units disposed in the first region, configured to display an image, and each including a polysilicon thin film transistor; and a plurality of second pixel units disposed in the second region, configured to display an image, and each including an organic thin film transistor.

公开(公告)号：US20200027903A1

公开(公告)日：2020-01-23

申请号：US16509548

申请日：2019-07-12

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xueyan Tian ,  Zheng Liu ,  Shuai Zhang

IPC: H01L27/12

Abstract: The present disclosure discloses an array substrate, a manufacturing method thereof, a display substrate, and a display device, belonging to the technical field of display. The array substrate includes: a flexible base, and, a TFT and a connecting line which are on a side of the flexible base. The array substrate has a display area and a lead area. The TFT is in the display area. The connecting line is in the lead area. The connecting line is used to electrically connect the TFT to a drive circuit. A manufacturing material of the connecting line includes a flexible conductive material. Since the material forming the connecting line includes a flexible conductive material, and the flexible conductive material has electrical conductivity and is not easily broken, the breaking probability of the connecting line is reduced, and the yield of the display device is effectively improved.

公开(公告)号：US20180114931A1

公开(公告)日：2018-04-26

申请号：US15527823

申请日：2016-06-16

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xueyan Tian

IPC: H01L51/05 ,  H01L51/00 ,  G01L1/16

Abstract: Provided are a thin film transistor sensor and a manufacturing method thereof. The thin film transistor sensor includes a first substrate and a second substrate opposite to each other, the first substrate includes a first flexible base substrate and a first gate electrode disposed on the first flexible base substrate, and the second substrate includes a second flexible base substrate and a second gate electrode 4 disposed on the second flexible base substrate; the second gate electrode is at least partially overlapped with and separated from the first gate electrode and configured to be electrically connected to the first gate electrode after the thin film transistor sensor is applied with a voltage, such that the thin film transistor sensor is turned on.

公开(公告)号：US20180040648A1

公开(公告)日：2018-02-08

申请号：US15537748

申请日：2016-09-02

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xueyan Tian

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L27/1296 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02686 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/1281 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/78675

Abstract: An array substrate and manufacturing method thereof, a display panel and a display device are provided. The array substrate includes a display area and a peripheral circuit area. The method includes forming an amorphous silicon thin film on the base substrate, forming a first amorphous silicon layer in the display area and a second amorphous silicon layer in the peripheral circuit area by a patterning process, so that a thickness of the first amorphous silicon layer is less than a thickness of the second amorphous silicon layer; and processing the first amorphous silicon layer and the second amorphous silicon layer simultaneously by an excimer laser annealing to form a first poly-silicon layer in the display area and a second poly-silicon layer in the peripheral circuit area, a grain size of the first poly-silicon layer being less than a grain size of the second poly-silicon layer.

公开(公告)号：US20160351602A1

公开(公告)日：2016-12-01

申请号：US15232641

申请日：2016-08-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xueyan Tian ,  Chunping Long

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L27/1281 ,  H01L21/02112 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1262 ,  H01L29/66757 ,  H01L29/78675

Abstract: A method for producing a low temperature polycrystalline silicon thin film, comprising steps of: providing a substrate; forming a thermal conduction and electrical insulation layer, a buffer layer and an amorphous silicon layer on the substrate in this order; and performing a high-temperature treatment and a laser annealing on the amorphous silicon layer to convert the amorphous silicon layer to a polycrystalline silicon thin film, wherein the thermal conduction and electrical insulation layer comprises regular patterns distributed on the substrate.

Abstract translation: 一种生产低温多晶硅薄膜的方法，包括以下步骤：提供基底; 在该基板上依次形成导热和电绝缘层，缓冲层和非晶硅层; 以及对所述非晶硅层进行高温处理和激光退火以将所述非晶硅层转换为多晶硅薄膜，其中所述导热和电绝缘层包括分布在所述基板上的规则图案。

公开(公告)号：US08951851B2

公开(公告)日：2015-02-10

申请号：US14086207

申请日：2013-11-21

Applicant: Boe Technology Group Co., Ltd.

Inventor： Xueyan Tian ,  Chunping Long

IPC: H01L29/66 ,  H01L21/02 ,  C30B13/24 ,  C30B29/06 ,  B23K26/00 ,  B23K26/06 ,  B23K26/073 ,  B23K26/08

CPC classification number: H01L21/02686 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/0734 ,  B23K26/0738 ,  B23K26/083 ,  B23K26/352 ,  B23K2101/42 ,  B23K2103/56 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L29/66757

Abstract: A method of manufacturing a low temperature polysilicon film comprises: providing a substrate on a platform; forming a buffer layer on said substrate; forming an amorphous silicon layer on said buffer layer; and heating and annealing said amorphous silicon layer to allow said amorphous silicon layer to form a polycrystalline silicon layer; wherein a thermal insulating layer is formed on a bottom surface of said substrate or a top surface of the platform, before said buffer layer is formed on said substrate.

Abstract translation: 制造低温多晶硅膜的方法包括：在平台上提供衬底; 在所述衬底上形成缓冲层; 在所述缓冲层上形成非晶硅层; 并且对所述非晶硅层进行加热和退火以允许所述非晶硅层形成多晶硅层; 其中在所述衬底的底表面或所述平台的顶表面之前，在所述衬底上形成所述缓冲层之前，形成绝热层。