Light emitting diode device
    32.
    发明授权
    Light emitting diode device 有权
    发光二极管装置

    公开(公告)号:US08450758B2

    公开(公告)日:2013-05-28

    申请号:US12939142

    申请日:2010-11-03

    IPC分类号: H01L33/38

    摘要: A high-brightness vertical light emitting diode (LED) device having an outwardly located metal electrode. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED of the invention has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.

    摘要翻译: 具有向外定位的金属电极的高亮度垂直发光二极管(LED)装置。 LED器件通过以下方式形成:使用诸如物理气相沉积(PVD),化学气相沉积(CVD),蒸发,电镀或沉积法的沉积方法在LED外延结构的表面的边缘上形成金属电极 其任何组合; 然后执行包装过程。 LED的组成可以是氮化物,磷化物或砷化物。 本发明的LED具有以下优点:提高电流扩散性能,降低金属电极的光吸收,增加亮度,提高效率,从而提高能量效率。 金属电极位于器件的边缘和发光侧。 金属电极具有两个侧壁,其中一个侧壁可以从另一个侧壁接收来自该装置的更多的发射光。

    Smart integrated semiconductor light emitting system including light emitting diodes and application specific integrated circuits (ASIC)
    33.
    发明授权
    Smart integrated semiconductor light emitting system including light emitting diodes and application specific integrated circuits (ASIC) 有权
    智能集成半导体发光系统包括发光二极管和专用集成电路(ASIC)

    公开(公告)号:US08084780B2

    公开(公告)日:2011-12-27

    申请号:US12540523

    申请日:2009-08-13

    IPC分类号: H01L33/00

    摘要: A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC) on the substrate, and at least one light emitting diode (LED) on the substrate in electrical communication with the application specific integrated circuit (ASIC). The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated system having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

    摘要翻译: 发光二极管(LED)系统包括衬底,衬底上的专用集成电路(ASIC)以及与专用集成电路(ASIC)电连接的衬底上的至少一个发光二极管(LED)。 发光二极管(LED)系统还可以包括聚合物透镜和用于产生白光的透镜或发光二极管(LED)上的荧光体层。 此外,多个发光二极管(LED)可以安装在基板上,并且可以具有用于智能色彩控制照明的不同颜色。 衬底和专用集成电路(ASIC)被配置为提供具有智能功能的集成系统。 此外,衬底被配置为补充和扩展专用集成电路(ASIC)的功能,并且还可以包括用于执行附加电功能的内置集成电路。

    Smart integrated semiconductor light emitting system including nitride based light emitting diodes (LED) and application specific integrated circuits (ASIC)
    34.
    发明授权
    Smart integrated semiconductor light emitting system including nitride based light emitting diodes (LED) and application specific integrated circuits (ASIC) 有权
    包括氮化物基发光二极管(LED)和专用集成电路(ASIC)的智能集成半导体发光系统

    公开(公告)号:US08933467B2

    公开(公告)日:2015-01-13

    申请号:US13309718

    申请日:2011-12-02

    IPC分类号: H01L31/12 H01L25/16

    摘要: A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

    摘要翻译: 发光二极管(LED)系统包括衬底,专用集成电路(ASIC)和至少一个发光二极管(LED),其包括III族氮化物基材料,例如GaN,InGaN,AlGaN,AlInGaN或 其他(Ga,In或Al)N基材料。 发光二极管(LED)系统还可以包括聚合物透镜和用于产生白光的透镜或发光二极管(LED)上的荧光体层。 此外,多个发光二极管(LED)可以安装在基板上,并且可以具有用于智能色彩控制照明的不同颜色。 衬底和专用集成电路(ASIC)被配置为提供具有智能功能的集成LED电路。 此外,衬底被配置为补充和扩展专用集成电路(ASIC)的功能,并且还可以包括用于执行附加电功能的内置集成电路。

    Smart Integrated Semiconductor Light Emitting System Including Nitride Based Light Emitting Diodes (LED) And Application Specific Integrated Circuits (ASIC)
    35.
    发明申请
    Smart Integrated Semiconductor Light Emitting System Including Nitride Based Light Emitting Diodes (LED) And Application Specific Integrated Circuits (ASIC) 有权
    包括氮化物发光二极管(LED)和专用集成电路(ASIC)的智能集成半导体发光系统

    公开(公告)号:US20120091466A1

    公开(公告)日:2012-04-19

    申请号:US13309718

    申请日:2011-12-02

    IPC分类号: H01L33/08 H01L33/32

    摘要: A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

    摘要翻译: 发光二极管(LED)系统包括衬底,专用集成电路(ASIC)和至少一个发光二极管(LED),其包括III族氮化物基材料,例如GaN,InGaN,AlGaN,AlInGaN或 其他(Ga,In或Al)N基材料。 发光二极管(LED)系统还可以包括聚合物透镜和用于产生白光的透镜或发光二极管(LED)上的荧光体层。 此外,多个发光二极管(LED)可以安装在基板上,并且可以具有用于智能色彩控制照明的不同颜色。 衬底和专用集成电路(ASIC)被配置为提供具有智能功能的集成LED电路。 此外,衬底被配置为补充和扩展专用集成电路(ASIC)的功能,并且还可以包括用于执行附加电功能的内置集成电路。

    Method for fabricating conductive substrates for electronic and optoelectronic devices
    38.
    发明授权
    Method for fabricating conductive substrates for electronic and optoelectronic devices 有权
    制造电子和光电器件导电基板的方法

    公开(公告)号:US08324082B1

    公开(公告)日:2012-12-04

    申请号:US13233070

    申请日:2011-09-15

    摘要: A method for fabricating a conductive substrate for an electronic device includes the steps of providing a semiconductor substrate; forming a plurality of grooves part way through the semiconductor substrate; filling the grooves with a polymer insulating material to form a plurality of polymer filled grooves; thinning the substrate from the back side to expose the polymer filled grooves; and singulating the semiconductor substrate into a plurality of conductive substrates. An optoelectronic device includes a conductive substrate; a polymer filled groove configured to separate the conductive substrate into a first semiconductor substrate and a second semiconductor substrate; a first front side electrode on the first semiconductor substrate and a second front side electrode on the second semiconductor substrate; and a light emitting diode (LED) chip on the first semiconductor substrate in electrical communication with the first front side electrode and with the second front side electrode.

    摘要翻译: 一种电子器件用导电性基板的制造方法,其特征在于,具备:半导体基板; 在半导体衬底上形成多个槽; 用聚合物绝缘材料填充凹槽以形成多个聚合物填充凹槽; 从背面使基材变薄,露出聚合物填充的凹槽; 以及将所述半导体衬底分离成多个导电衬底。 光电器件包括导电基片; 聚合物填充槽,被配置为将所述导电衬底分离成第一半导体衬底和第二半导体衬底; 第一半导体衬底上的第一前侧电极和第二半导体衬底上的第二前侧电极; 以及与所述第一前侧电极和所述第二前侧电极电连通的所述第一半导体衬底上的发光二极管(LED)芯片。

    Molding glass lens and mold thereof
    39.
    发明授权
    Molding glass lens and mold thereof 失效
    成型玻璃透镜及其模具

    公开(公告)号:US07771815B2

    公开(公告)日:2010-08-10

    申请号:US11892950

    申请日:2007-08-28

    摘要: A molding glass lens and a mold thereof are disclosed. The molding glass lens consists of an upper optical surface, a lower optical surface, two outers surrounding the optical surfaces and at least three grooves arranged in the form of a circle disposed on the lower outer and/or the upper outer. The disposition of the grooves has no affecting in original size of the outers as well as assembling with other mechanical parts in les group. The mold of the lens includes an upper molding unit and a lower molding unit. Cavity of each molding unit is composed of a central part for forming an optical surface of the lens and an outer circular part for forming outer of the lens. At least three protrudent parts with the same height are disposed in the form of a circle on the outer circular of the lower molding unit and/or the upper molding unit. Thus the air in the mold cavity is easy to exhaust through the gap formed by protrudent parts and glass preform. Therefore, air bubbles generated during the molding processes are prevented and precision of the glass lens is provided.

    摘要翻译: 公开了一种成型玻璃透镜及其模具。 成型玻璃透镜由上光学表面,下光学表面,围绕光学表面的两个外部和设置在下外部和/或上部外部上的以圆形排列的至少三个凹槽组成。 凹槽的布置对外观的原始尺寸以及与les组中的其他机械部件的组装没有影响。 透镜的模具包括上模制单元和下模制单元。 每个模制单元的腔体由用于形成透镜的光学表面的中心部分和用于形成透镜外部的外部圆形部分组成。 具有相同高度的至少三个凸起部分以下部模制单元和/或上部模制单元的外圆周上的圆形形式设置。 因此,模腔中的空气容易通过突出部分和玻璃预制件形成的间隙排出。 因此,防止了在成型过程中产生的气泡并提供了玻璃透镜的精度。