摘要:
The present invention discloses a liquid crystal display panel, liquid crystal display device, photo detecting device and light intensity adjustment method. The liquid crystal display panel comprises a plurality of first scan lines, a plurality of first data lines, a plurality of first thin film transistors, a plurality of liquid crystal pixel units and a built-in photo detecting module. The plurality of first thin film transistors are respectively disposed at intercrosses of the plurality of first scan lines and the plurality of first data lines, and each of the first thin film transistors is connected to the first data line and the first scan line. Each of the first thin film transistors is used to drive a liquid crystal pixel unit. The built-in photo detecting module detects light and outputs a multi-bit digital signal corresponding to the intensity of the light.
摘要:
A detection apparatus for detecting a defect in an array of a liquid crystal display, comprises a main chamber, a stage, a detection device and a main heater. The stage is disposed in the main chamber, and the array is placed on stage. The detection device is disposed in the main chamber and detects an electrical characteristic of the array. The main heater heats the array to a first temperature to reveal the defect of the array.
摘要:
A non-contact inspecting device for a panel, which has a plurality of signal inputting sensors, a plurality of signal detecting sensors and a control circuit. The signal inputting sensors are configured in a first detecting bar, and the signal detecting sensors are configured in a second detecting bar. When the device inspects the panel, the control circuit controls the signal input sensors of the first detecting bar to provide a detecting signal and controls the corresponding signal detecting sensors of the second detecting bar to receive the detecting signal synchronously, thereby relatively reducing tact-time.
摘要:
The invention discloses a two-dimensional array waveguide structure implemented with multi-layer process or monolithic integrated circuit process. The structure includes a first metal layer, a second metal layer and a dielectric layer. The dielectric layer lain between the first and the second metal layer is for isolating the first metal layer from the second metal layer. The first metal layer and the second metal layer respectively formed from a plurality of first unit cells and second unit cells arranged in rows and columns create the two-dimensional array waveguide structure. The first metal layer consists of a main body and a plurality of connecting arms, whereas the second metal layer consists of a metal wire loop. The second metal layer is located below the first metal layer, and each second unit cell corresponds to each first unit cell in a one-on-one manner to further build a complete unit cell. While the main body of each unit cell corresponds to an inductance element, the connecting arms of each unit cell linking the adjacent unit cells correspond to a capacitance element; therefore, a two-dimensional L-C array is formed.
摘要:
A transflective LCD device having various cell gaps. The transflective LCD device is characterized by the passivation layer being formed on a lower substrate in a reflective region. A color filter layer is formed above the passivation layer, wherein a first thickness of the color filter layer in the reflective region is smaller than a second thickness of the color filter layer in a transmissive region. A transparent organic element is formed on an inner side of an upper substrate in the reflective region for bridging a gap in a liquid crystal layer between upper and lower substrates, wherein one end of the transparent organic element shores up the lower substrate. Thus, the gap thickness in the reflective region is smaller than that in the transmissive region.
摘要:
A polysilicon thin film transistor with a self-aligned LDD structure has a polysilicon layer formed on a transparent insulating substrate. The polysilicon layer consists of a channel region, an LDD structure on two sides of the channel region, and a source/drain region on two sides of the LDD structure. A gate insulating layer is formed on the polysilicon layer, a first metal layer is patterned on the gate insulating layer to cover the channel region, and a second metal layer is patterned on the first metal layer to cover the channel region.
摘要:
A method for fabricating a low temperature polysilicon thin film transistor incorporating a channel passivation step is described. The method achieves dopant ion activation in a polysilicon gate by using laser irradiation, however, with an additional insulating material layer such as SiOx or SixNy overlying and protecting the channel portion of the polysilicon gate. Any possible contamination by residual photoresist material after a photoresist removal step on the channel portion of the polysilicon gate can thus be avoided. Furthermore, deficiencies such as dopant ions out-diffusion and lateral diffusion can be avoided. The leakage current of the thin film transistors formed by the present invention method is significantly reduced when compared to those formed by a conventional method.
摘要:
A method for fabricating a low temperature polysilicon thin film transistor incorporating a multi-layer channel passivation stack, and for activating dopant ions in a polysilicon gate in the TFT structure has been described. In the method, a multi-layer channel passivation stack consisting of a first insulating material layer, a metal layer and a second insulating material layer are first deposited on a polysilicon gate to shield a channel region in the gate during a laser irradiation process for activating the dopant ions in the gate. Any damages to the channel region of the polysilicon gate by the laser irradiation or the rapid thermal annealing step can be avoided, as well as the dopant impurity out-diffusion and lateral diffusion problems.
摘要:
An improved organic photoconductor is disclosed which comprises: (a) a conductive substrate; (b) a charge generation layer; (c) a charge transport layer; and (d) a reinforcing overcoating layer. The reinforcing overcoating layer contains a polymer resin prepared from a reaction mixture comprising: (i) about 87 to 94 wt % of a bifunctional 3,9-divinyl spirobi(m-dioxane) and styrene; (ii) about 5 to 8 wt % of maliec acid di-allyl ester; and (iii) about 1 to 5 wt % of a heat-induced polymerization initiator. The organic photoconductor exhibits light and heat stability and abrasion resistance comparable to those of inorganic photoconductors, but it eliminates many of the shortcomings, such as toxicity and enviromental pollution problems, that have been recognized as being associated with the inorganic photoconductors. Furthermore, the provision of this overcoating layer does not cause any loss of performance, as measured by the residual potential under various test conditions.