LIQUID CRYSTAL DISPLAY PANEL, LIQUID CRYSTAL DISPLAY DEVICE, PHOTO DETECTING DEVICE AND LIGHT INTENSITY ADJUSTMENT METHOD
    31.
    发明申请
    LIQUID CRYSTAL DISPLAY PANEL, LIQUID CRYSTAL DISPLAY DEVICE, PHOTO DETECTING DEVICE AND LIGHT INTENSITY ADJUSTMENT METHOD 有权
    液晶显示面板,液晶显示装置,照片检测装置和光强度调整方法

    公开(公告)号:US20100253614A1

    公开(公告)日:2010-10-07

    申请号:US12576608

    申请日:2009-10-09

    申请人: Chih-Chiang Chen

    发明人: Chih-Chiang Chen

    IPC分类号: G09G3/36 G02F1/133

    摘要: The present invention discloses a liquid crystal display panel, liquid crystal display device, photo detecting device and light intensity adjustment method. The liquid crystal display panel comprises a plurality of first scan lines, a plurality of first data lines, a plurality of first thin film transistors, a plurality of liquid crystal pixel units and a built-in photo detecting module. The plurality of first thin film transistors are respectively disposed at intercrosses of the plurality of first scan lines and the plurality of first data lines, and each of the first thin film transistors is connected to the first data line and the first scan line. Each of the first thin film transistors is used to drive a liquid crystal pixel unit. The built-in photo detecting module detects light and outputs a multi-bit digital signal corresponding to the intensity of the light.

    摘要翻译: 本发明公开了一种液晶显示面板,液晶显示装置,光电检测装置及光强调整方法。 液晶显示面板包括多个第一扫描线,多个第一数据线,多个第一薄膜晶体管,多个液晶像素单元和内置光电检测模块。 多个第一薄膜晶体管分别设置在多个第一扫描线和多条第一数据线的交叉处,并且每个第一薄膜晶体管连接到第一数据线和第一扫描线。 每个第一薄膜晶体管用于驱动液晶像素单元。 内置的光电检测模块检测光,并输出与光强相对应的多位数字信号。

    Non-contact detecting device for a panel
    33.
    发明申请
    Non-contact detecting device for a panel 审中-公开
    面板非接触检测装置

    公开(公告)号:US20070090856A1

    公开(公告)日:2007-04-26

    申请号:US11407942

    申请日:2006-04-21

    IPC分类号: G01R31/00

    CPC分类号: G09G3/006

    摘要: A non-contact inspecting device for a panel, which has a plurality of signal inputting sensors, a plurality of signal detecting sensors and a control circuit. The signal inputting sensors are configured in a first detecting bar, and the signal detecting sensors are configured in a second detecting bar. When the device inspects the panel, the control circuit controls the signal input sensors of the first detecting bar to provide a detecting signal and controls the corresponding signal detecting sensors of the second detecting bar to receive the detecting signal synchronously, thereby relatively reducing tact-time.

    摘要翻译: 一种用于面板的非接触检查装置,其具有多个信号输入传感器,多个信号检测传感器和控制电路。 信号输入传感器配置在第一检测条中,信号检测传感器配置在第二检测条中。 当设备检查面板时,控制电路控制第一检测条的信号输入传感器以提供检测信号,并且控制第二检测条的相应信号检测传感器以同步地接收检测信号,从而相对减少了触发时间 。

    Miniaturized microwave integrated circuit using complementary conducting surfaces
    34.
    发明申请
    Miniaturized microwave integrated circuit using complementary conducting surfaces 失效
    使用互补导电表面的微型化微波集成电路

    公开(公告)号:US20050077979A1

    公开(公告)日:2005-04-14

    申请号:US10684037

    申请日:2003-10-09

    IPC分类号: H01P3/00 H01P5/12

    CPC分类号: H01P3/00

    摘要: The invention discloses a two-dimensional array waveguide structure implemented with multi-layer process or monolithic integrated circuit process. The structure includes a first metal layer, a second metal layer and a dielectric layer. The dielectric layer lain between the first and the second metal layer is for isolating the first metal layer from the second metal layer. The first metal layer and the second metal layer respectively formed from a plurality of first unit cells and second unit cells arranged in rows and columns create the two-dimensional array waveguide structure. The first metal layer consists of a main body and a plurality of connecting arms, whereas the second metal layer consists of a metal wire loop. The second metal layer is located below the first metal layer, and each second unit cell corresponds to each first unit cell in a one-on-one manner to further build a complete unit cell. While the main body of each unit cell corresponds to an inductance element, the connecting arms of each unit cell linking the adjacent unit cells correspond to a capacitance element; therefore, a two-dimensional L-C array is formed.

    摘要翻译: 本发明公开了一种采用多层工艺或单片集成电路工艺实现的二维阵列波导结构。 该结构包括第一金属层,第二金属层和电介质层。 介于第一和第二金属层之间的介质层用于隔离第一金属层与第二金属层。 分别由排列成行和列的多个第一单元电池和第二单元电池分别形成的第一金属层和第二金属层形成二维阵列波导结构。 第一金属层由主体和多个连接臂组成,而第二金属层由金属线环构成。 第二金属层位于第一金属层下方,并且每个第二单元电池以一对一的方式对应于每个第一单元电池,以进一步构建完整的晶胞。 当每个单位单元的主体对应于电感元件时,连接相邻单位单元的每个单位单元的连接臂对应于电容元件; 因此,形成二维L-C阵列。

    Transflective liquid crystal display device having various cell gaps and method of fabricating the same
    35.
    发明授权
    Transflective liquid crystal display device having various cell gaps and method of fabricating the same 有权
    具有各种单元间隙的透射型液晶显示装置及其制造方法

    公开(公告)号:US06870585B2

    公开(公告)日:2005-03-22

    申请号:US10622795

    申请日:2003-07-18

    摘要: A transflective LCD device having various cell gaps. The transflective LCD device is characterized by the passivation layer being formed on a lower substrate in a reflective region. A color filter layer is formed above the passivation layer, wherein a first thickness of the color filter layer in the reflective region is smaller than a second thickness of the color filter layer in a transmissive region. A transparent organic element is formed on an inner side of an upper substrate in the reflective region for bridging a gap in a liquid crystal layer between upper and lower substrates, wherein one end of the transparent organic element shores up the lower substrate. Thus, the gap thickness in the reflective region is smaller than that in the transmissive region.

    摘要翻译: 具有各种单元间隙的透反射LCD装置。 半透射型LCD器件的特征在于钝化层形成在反射区域中的下基板上。 在钝化层上方形成滤色器层,其中反射区域中的滤色器层的第一厚度小于透射区域中的滤色器层的第二厚度。 透明有机元件形成在反射区域中的上基板的内侧,用于桥接上基板和下基板之间的液晶层中的间隙,其中透明有机元件的一端向下延伸到下基板。 因此,反射区域中的间隙厚度小于透射区域中的间隙厚度。

    Method for forming polysilicon thin film transistor with a self-aligned LDD structure
    36.
    发明授权
    Method for forming polysilicon thin film transistor with a self-aligned LDD structure 有权
    用于形成具有自对准LDD结构的多晶硅薄膜晶体管的方法

    公开(公告)号:US06677189B2

    公开(公告)日:2004-01-13

    申请号:US10008848

    申请日:2001-11-30

    IPC分类号: H01L2100

    CPC分类号: H01L29/66757 H01L29/78621

    摘要: A polysilicon thin film transistor with a self-aligned LDD structure has a polysilicon layer formed on a transparent insulating substrate. The polysilicon layer consists of a channel region, an LDD structure on two sides of the channel region, and a source/drain region on two sides of the LDD structure. A gate insulating layer is formed on the polysilicon layer, a first metal layer is patterned on the gate insulating layer to cover the channel region, and a second metal layer is patterned on the first metal layer to cover the channel region.

    摘要翻译: 具有自对准LDD结构的多晶硅薄膜晶体管具有形成在透明绝缘基板上的多晶硅层。 多晶硅层由沟道区,沟道区两侧的LDD结构以及LDD结构两侧的源/漏区构成。 在多晶硅层上形成栅极绝缘层,在栅极绝缘层上形成第一金属层以覆盖沟道区,在第一金属层上形成第二金属层以覆盖沟道区。

    Method for fabricating a low temperature polysilicon thin film transistor incorporating channel passivation step
    37.
    发明授权
    Method for fabricating a low temperature polysilicon thin film transistor incorporating channel passivation step 有权
    并入通道钝化步骤的低温多晶硅薄膜晶体管的制造方法

    公开(公告)号:US06534350B2

    公开(公告)日:2003-03-18

    申请号:US09920877

    申请日:2001-08-02

    IPC分类号: H01L2100

    摘要: A method for fabricating a low temperature polysilicon thin film transistor incorporating a channel passivation step is described. The method achieves dopant ion activation in a polysilicon gate by using laser irradiation, however, with an additional insulating material layer such as SiOx or SixNy overlying and protecting the channel portion of the polysilicon gate. Any possible contamination by residual photoresist material after a photoresist removal step on the channel portion of the polysilicon gate can thus be avoided. Furthermore, deficiencies such as dopant ions out-diffusion and lateral diffusion can be avoided. The leakage current of the thin film transistors formed by the present invention method is significantly reduced when compared to those formed by a conventional method.

    摘要翻译: 描述了一种制造并入通道钝化步骤的低温多晶硅薄膜晶体管的制造方法。 该方法通过使用激光照射在多晶硅栅极中实现掺杂剂离子活化,然而,通过覆盖并保护多晶硅栅极的沟道部分的诸如SiOx或SixNy的附加绝缘材料层来实现掺杂剂离子激活。 因此,可以避免在多晶硅栅极的沟道部分上的光致抗蚀剂去除步骤之后残留的光致抗蚀剂材料的任何可能的污染。 此外,可以避免诸如掺杂剂离子扩散和横向扩散的缺陷。 与通过常规方法形成的薄膜晶体管相比,通过本发明方法形成的薄膜晶体管的漏电流显着降低。

    Method for fabricating a low temperature polysilicon thin film transistor incorporating multi-layer channel passivation step
    38.
    发明授权
    Method for fabricating a low temperature polysilicon thin film transistor incorporating multi-layer channel passivation step 失效
    并入多层通道钝化工艺的低温多晶硅薄膜晶体管的制造方法

    公开(公告)号:US06482685B1

    公开(公告)日:2002-11-19

    申请号:US10037014

    申请日:2001-12-31

    IPC分类号: H01L29786

    摘要: A method for fabricating a low temperature polysilicon thin film transistor incorporating a multi-layer channel passivation stack, and for activating dopant ions in a polysilicon gate in the TFT structure has been described. In the method, a multi-layer channel passivation stack consisting of a first insulating material layer, a metal layer and a second insulating material layer are first deposited on a polysilicon gate to shield a channel region in the gate during a laser irradiation process for activating the dopant ions in the gate. Any damages to the channel region of the polysilicon gate by the laser irradiation or the rapid thermal annealing step can be avoided, as well as the dopant impurity out-diffusion and lateral diffusion problems.

    摘要翻译: 已经描述了一种制造包含多层沟道钝化层的低温多晶硅薄膜晶体管,并且用于激活TFT结构中的多晶硅栅极中的掺杂剂离子的方法。 在该方法中,首先在多晶硅栅极上沉积由第一绝缘材料层,金属层和第二绝缘材料层组成的多层沟道钝化层,以在用于激活的激光照射过程中屏蔽栅极中的沟道区 栅极中的掺杂剂离子。 可以避免通过激光照射或快速热退火步骤对多晶硅栅极的沟道区域的任何损坏,以及掺杂剂杂质扩散和横向扩散问题。

    Organic photoconductor with polydivinyl spirobi (M-dioxane) polymer
overcoating
    39.
    发明授权
    Organic photoconductor with polydivinyl spirobi (M-dioxane) polymer overcoating 失效
    具有聚二乙烯基螺(M-二恶烷)聚合物外涂层的有机光电导体

    公开(公告)号:US5518847A

    公开(公告)日:1996-05-21

    申请号:US514524

    申请日:1995-08-14

    申请人: Chih-Chiang Chen

    发明人: Chih-Chiang Chen

    IPC分类号: G03G5/047 G03G5/147

    摘要: An improved organic photoconductor is disclosed which comprises: (a) a conductive substrate; (b) a charge generation layer; (c) a charge transport layer; and (d) a reinforcing overcoating layer. The reinforcing overcoating layer contains a polymer resin prepared from a reaction mixture comprising: (i) about 87 to 94 wt % of a bifunctional 3,9-divinyl spirobi(m-dioxane) and styrene; (ii) about 5 to 8 wt % of maliec acid di-allyl ester; and (iii) about 1 to 5 wt % of a heat-induced polymerization initiator. The organic photoconductor exhibits light and heat stability and abrasion resistance comparable to those of inorganic photoconductors, but it eliminates many of the shortcomings, such as toxicity and enviromental pollution problems, that have been recognized as being associated with the inorganic photoconductors. Furthermore, the provision of this overcoating layer does not cause any loss of performance, as measured by the residual potential under various test conditions.

    摘要翻译: 公开了一种改进的有机光电导体,其包括:(a)导电基板; (b)电荷产生层; (c)电荷输送层; 和(d)加强外涂层。 增强外涂层含有由反应混合物制备的聚合物树脂,其包含:(i)约87至94重量%的双官能3,9-二乙烯基螺(间二恶烷)和苯乙烯; (ii)约5至8重量%的马来酸二烯丙基酯; 和(iii)约1〜5重量%的热诱导聚合引发剂。 有机光电导体表现出与无机光电导体相当的光和热稳定性和耐磨性,但它消除了已被认为与无机感光体相关的许多缺点,例如毒性和环境污染问题。 此外,提供这种外涂层不会由于在各种试验条件下的残留电位测量而导致性能的任何损失。