公开(公告)号：US09505910B2

公开(公告)日：2016-11-29

申请号：US14352232

申请日：2012-06-12

申请人： Jianming Zhou ,  Shaoqun He

发明人： Jianming Zhou ,  Shaoqun He

IPC分类号： C08K5/29 ,  C08K5/01 ,  C08K5/103 ,  C08K5/07 ,  C08G18/32 ,  C09D175/04 ,  C08G18/30 ,  C08G18/76 ,  C08G18/48 ,  C08G18/42 ,  C07C275/62 ,  C08G18/78

CPC分类号： C08K5/29 ,  C07C275/62 ,  C08G18/302 ,  C08G18/3206 ,  C08G18/3212 ,  C08G18/42 ,  C08G18/48 ,  C08G18/7671 ,  C08G18/7831 ,  C08K5/01 ,  C08K5/07 ,  C08K5/103 ,  C09D175/04

摘要： Provided are a modified diphenylmethane diisocyanate (MDI) biuret curing agent and preparation method thereof, the curing agent being prepared by reacting dibasic alcohol, water and MDI in an organic solvent. The preparation method includes the steps of: firstly, using the dibasic alcohol to modify a part of MDI, dividing the metered water into multiple parts, and adding the water by multiple times; after adding the first part of water, reacting firstly under 70-100° C., then heating up to 120-140° C. for reaction; secondly, lowering the temperature to 70-100° C., adding the second part of water; and repeating the above processes until all the metered water is added, to produce the MDI curing agent with partial biuret structure. The curing agent is mainly used as the curing agent of polyurethane coating and adhesive agent, and has a higher NCO percentage and a slower curing speed than that of common MDI prepolymer curing agents.

摘要翻译： 提供了一种改性二苯甲烷二异氰酸酯（MDI）缩二脲固化剂及其制备方法，该固化剂通过在有机溶剂中使二元醇，水和MDI反应而制备。 所述制备方法包括以下步骤：首先使用二元醇改性MDI的一部分，将计量水分为多份，多次加水; 加入第一部分水后，首先在70-100℃下反应，然后加热至120-140℃进行反应; 其次，将温度降至70-100℃，加入第二部分水; 并重复上述过程直到加入所有计量的水，以制备具有部分缩二脲结构的MDI固化剂。 固化剂主要用作聚氨酯涂料和粘合剂的固化剂，与常规MDI预聚物固化剂相比，具有较高的NCO百分比和较慢的固化速度。

公开(公告)号：US09454090B2

公开(公告)日：2016-09-27

申请号：US13596683

申请日：2012-08-28

申请人： Hongqian Sun ,  Jianming Zhou ,  Volodymyr Temchenko

发明人： Hongqian Sun ,  Jianming Zhou ,  Volodymyr Temchenko

IPC分类号： G03B27/42 ,  G03B27/52 ,  G03F7/20

CPC分类号： G03F7/70716 ,  G03F7/70875 ,  G03F7/7095 ,  Y10T428/24802

摘要： Disclosed are cooling apparatus and methods of cooling a template. The cooling apparatus includes a reticle and an optical cooling material. The reticle includes patterning for at least partially reflecting patterning radiation incident on a first side of the reticle. The optical cooling material is in thermally-conductive coupling with the reticle mount and is configured to produce cooling when exposed to a laser radiation. More particularly, the optical cooling material includes a glass material that exhibits anti-Stokes fluorescence that produces cooling of the glass material when exposed to an infrared laser beam. In some embodiments, the cooling apparatus may be incorporated with a reticle mount. The reticle mount is in thermally-conductive coupling with a second side of the reticle.

摘要翻译： 公开了冷却装置和冷却模板的方法。 冷却装置包括掩模版和光学冷却材料。 掩模版包括图案化以至少部分地反射入射在掩模版的第一侧上的图案化辐射。 光学冷却材料与掩模版安装座导热耦合，并且被配置为当暴露于激光辐射时产生冷却。 更具体地，光学冷却材料包括表现出反斯托克斯荧光的玻璃材料，其在暴露于红外激光束时产生玻璃材料的冷却。 在一些实施例中，冷却装置可以与掩模版安装件结合。 标线架安装件与标线片的第二面进行导热耦合。

公开(公告)号：US20140252269A1

公开(公告)日：2014-09-11

申请号：US14352232

申请日：2012-06-12

申请人： Jianming Zhou ,  Shaoqun He

发明人： Jianming Zhou ,  Shaoqun He

IPC分类号： C08K5/29 ,  C08K5/07 ,  C08K5/01 ,  C08K5/103

CPC分类号： C08K5/29 ,  C07C275/62 ,  C08G18/302 ,  C08G18/3206 ,  C08G18/3212 ,  C08G18/42 ,  C08G18/48 ,  C08G18/7671 ,  C08G18/7831 ,  C08K5/01 ,  C08K5/07 ,  C08K5/103 ,  C09D175/04

摘要： Provided are a modified diphenylmethane diisocyanate (MDI) biuret curing agent and preparation method thereof, the curing agent being prepared by reacting dibasic alcohol, water and MDI in an organic solvent. The preparation method includes the steps of: firstly, using the dibasic alcohol to modify a part of MDI, dividing the metered water into multiple parts, and adding the water by multiple times; after adding the first part of water, reacting firstly under 70-100° C., then heating up to 120-140° C. for reaction; secondly, lowering the temperature to 70-100° C., adding the second part of water; and repeating the above processes until all the metered water is added, to produce the MDI curing agent with partial biuret structure. The curing agent is mainly used as the curing agent of polyurethane coating and adhesive agent, and has a higher NCO percentage and a slower curing speed than that of common MDI prepolymer curing agents.

摘要翻译： 提供了一种改性二苯甲烷二异氰酸酯（MDI）缩二脲固化剂及其制备方法，该固化剂通过在有机溶剂中使二元醇，水和MDI反应而制备。 所述制备方法包括以下步骤：首先使用二元醇改性MDI的一部分，将计量水分为多份，多次加水; 加入第一部分水后，首先在70-100℃下反应，然后加热至120-140℃进行反应; 其次，将温度降至70-100℃，加入第二部分水; 并重复上述过程直到加入所有计量的水，以制备具有部分缩二脲结构的MDI固化剂。 固化剂主要用作聚氨酯涂料和粘合剂的固化剂，与常规MDI预聚物固化剂相比，具有较高的NCO百分比和较慢的固化速度。

公开(公告)号：US20130341795A1

公开(公告)日：2013-12-26

申请号：US13529006

申请日：2012-06-21

申请人： Justin B. Dorhout ,  Ranjan Khurana ,  David Swindler ,  Jianming Zhou

发明人： Justin B. Dorhout ,  Ranjan Khurana ,  David Swindler ,  Jianming Zhou

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L23/48

CPC分类号： H01L23/528 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

摘要： Some embodiments include a semiconductor construction having a pair of lines extending primarily along a first direction, and having a pair of contacts between the lines. The contacts are spaced from one another by a lithographic dimension, and are spaced from the lines by sub-lithographic dimensions. Some embodiments include a method of forming a semiconductor construction. Features are formed over a base. Each feature has a first type sidewall and a second type sidewall. The features are spaced from one another by gaps. Some of the gaps are first type gaps between first type sidewalls, and others of the gaps are second type gaps between second type sidewalls. Masking material is formed to selectively fill the first type gaps relative to the second type gaps. Excess masking material is removed to leave a patterned mask. A pattern is transferred from the patterned mask into the base.

摘要翻译： 一些实施例包括具有主要沿着第一方向延伸的一对线并且在线之间具有一对接触的半导体结构。 触点通过光刻尺寸彼此间隔开，并且通过亚光刻尺寸与线间隔开。 一些实施例包括形成半导体结构的方法。 特征形成在一个基地上。 每个特征具有第一类型侧壁和第二类型侧壁。 这些特征通过间隙彼此间隔开。 一些间隙是第一类型侧壁之间的第一类型间隙，而其它间隙是第二类型侧壁之间的第二类型间隙。 形成掩模材料以相对于第二类型间隙选择性地填充第一类型的间隙。 去除过量的掩模材料以留下图案化掩模。 图案从图案化掩模转移到基底中。

公开(公告)号：US08400634B2

公开(公告)日：2013-03-19

申请号：US12702026

申请日：2010-02-08

申请人： Jianming Zhou ,  Craig A. Hickman ,  Yuan He

发明人： Jianming Zhou ,  Craig A. Hickman ,  Yuan He

IPC分类号： G01B11/00 ,  H01L23/544 ,  H01L21/76

CPC分类号： H01L23/544 ,  G03F9/7076 ,  H01L2223/54426 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor wafer alignment markers and associated systems and methods are disclosed. A wafer in accordance with a particular embodiment includes a wafer substrate having an alignment marker that includes a first structure and a second structure, each having a pitch, with first features and second features positioned within the pitch. The first features are positioned to generate first phase portions of an interference pattern, with at least one of the first features having a width different than another of the first features in the pitch, and with the second features positioned to generate second phase portions of the interference pattern, with the second phase portions having a second phase opposite the first phase, and with at least one of the second features having a width different than that of another of the second features in the pitch. The pitch for the first structure is different than the pitch for the second structure.

摘要翻译： 公开了半导体晶片对准标记和相关系统和方法。 根据特定实施例的晶片包括具有对准标记的晶片衬底，该对准标记包括第一结构和第二结构，每个具有间距，第一特征和第二特征位于间距内。 第一特征被定位成产生干涉图案的第一相位部分，其中第一特征中的至少一个具有不同于间距中的第一特征的宽度的宽度，并且第二特征被定位成产生第二相位部分 干涉图案，其中第二相位部分具有与第一相位相对的第二相位，并且第二特征中的至少一个具有与间距中的第二特征中的另一特征的宽度不同的宽度。 第一结构的间距与第二结构的间距不同。

公开(公告)号：US20130040245A1

公开(公告)日：2013-02-14

申请号：US13205004

申请日：2011-08-08

申请人： Scott L. Light ,  Kaveri Jain ,  Zishu Zhang ,  Anton J. de Villiers ,  Dan Millward ,  Jianming Zhou ,  Michael D. Hyatt

发明人： Scott L. Light ,  Kaveri Jain ,  Zishu Zhang ,  Anton J. de Villiers ,  Dan Millward ,  Jianming Zhou ,  Michael D. Hyatt

IPC分类号： G03F7/20

CPC分类号： G03F7/0035

摘要： A method of processing a substrate includes forming first photoresist on a substrate. A portion of the first photoresist is selectively exposed to actinic energy and then the first photoresist is negative tone developed to remove an unexposed portion of the first photoresist. Second photoresist is formed on the substrate over the developed first photoresist. A portion of the second photoresist is selectively exposed to actinic energy and then the second photoresist is negative tone developed to remove an unexposed portion of the second photoresist and form a pattern on the substrate which comprises the developed first photoresist and the developed second photoresist. Other implementations are disclosed.

摘要翻译： 一种处理衬底的方法包括在衬底上形成第一光致抗蚀剂。 第一光致抗蚀剂的一部分选择性地暴露于光化能，然后第一光致抗蚀剂显影为负色调以除去第一光致抗蚀剂的未曝光部分。 在显影的第一光致抗蚀剂上的基底上形成第二光致抗蚀剂。 第二光致抗蚀剂的一部分选择性地暴露于光化能，然后第二光致抗蚀剂显色以除去第二光致抗蚀剂的未曝光部分，并在包含显影的第一光致抗蚀剂和显影的第二光致抗蚀剂的基板上形成图案。 公开了其他实现。

公开(公告)号：US20110194112A1

公开(公告)日：2011-08-11

申请号：US12702026

申请日：2010-02-08

申请人： Jianming Zhou ,  Craig A. Hickman ,  Yuan He

发明人： Jianming Zhou ,  Craig A. Hickman ,  Yuan He

IPC分类号： G01B11/14 ,  H01L23/544 ,  H01L21/71

CPC分类号： H01L23/544 ,  G03F9/7076 ,  H01L2223/54426 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor wafer alignment markers and associated systems and methods are disclosed. A wafer in accordance with a particular embodiment includes a wafer substrate having an alignment marker that includes a first structure and a second structure, each having a pitch, with first features and second features positioned within the pitch. The first features are positioned to generate first phase portions of an interference pattern, with at least one of the first features having a width different than another of the first features in the pitch, and with the second features positioned to generate second phase portions of the interference pattern, with the second phase portions having a second phase opposite the first phase, and with at least one of the second features having a width different than that of another of the second features in the pitch. The pitch for the first structure is different than the pitch for the second structure.

摘要翻译： 公开了半导体晶片对准标记和相关系统和方法。 根据特定实施例的晶片包括具有对准标记的晶片衬底，该对准标记包括第一结构和第二结构，每个具有间距，第一特征和第二特征位于间距内。 第一特征被定位成产生干涉图案的第一相位部分，其中第一特征中的至少一个具有不同于间距中的第一特征的宽度的宽度，并且第二特征被定位成产生第二相位部分 干涉图案，其中第二相位部分具有与第一相位相对的第二相位，并且第二特征中的至少一个具有与间距中的第二特征中的另一特征的宽度不同的宽度。 第一结构的间距与第二结构的间距不同。

公开(公告)号：US09235134B2

公开(公告)日：2016-01-12

申请号：US12857316

申请日：2010-08-16

申请人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan Millward

发明人： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott Light ,  Dan Millward

IPC分类号： G03B27/42 ,  G03F7/20

CPC分类号： G03F7/70116 ,  G03F7/70891

摘要： Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.

摘要翻译： 公开了光刻设备和方法。 一种这样的设备包括光路，其被配置为在光学系统的一部分中提供第一衍射图案，并且在提供第一衍射图案之后，向光学系统的部分提供第二衍射图案。 同时，一种这样的方法包括在光学系统的一部分上提供第一衍射图案，其中半导体制品使用第一衍射图案成像。 第二衍射图案也提供到光学系统的部分上，但是第二衍射图案不用于对半导体制品进行成像。

公开(公告)号：US09134628B2

公开(公告)日：2015-09-15

申请号：US13349576

申请日：2012-01-13

申请人： Jianming Zhou ,  Craig Hickman

发明人： Jianming Zhou ,  Craig Hickman

IPC分类号： G01B11/00 ,  G03F7/20

CPC分类号： G03F7/70633

摘要： An overlay mark for checking alignment accuracy between a former layer and a later layer on a wafer is described, including a former pattern as a part of the former layer, and a later pattern as a part of a patterned photoresist layer defining the later layer. The former pattern has two parallel opposite edges each forming a sharp angle α with the x-axis of the wafer. The later pattern also has two parallel opposite edges each forming the sharp angle α with the x-axis of the wafer.

摘要翻译： 描述了用于检查晶片上的前层和稍后层之间的对准精度的覆盖标记，包括作为前一层的一部分的前一图案，以及作为限定稍后层的图案化光致抗蚀剂层的一部分的稍后图案。 前一种图案具有两个平行的相对边缘，每个边缘与晶片的x轴形成锐角α。 后面的图案还具有两个平行的相对边缘，每个边缘与晶片的x轴形成锐角α。

公开(公告)号：US08736814B2

公开(公告)日：2014-05-27

申请号：US13159245

申请日：2011-06-13

申请人： Yuan He ,  Jianming Zhou ,  Scott L. Light ,  Anton deVilliers ,  Kaveri Jain ,  Zishu Zhang ,  Dan Millward

发明人： Yuan He ,  Jianming Zhou ,  Scott L. Light ,  Anton deVilliers ,  Kaveri Jain ,  Zishu Zhang ,  Dan Millward

IPC分类号： G03B27/54 ,  G03B27/32 ,  G03F7/20

CPC分类号： G02B26/06 ,  G03F7/70091 ,  G03F7/70125 ,  G03F7/70258 ,  G03F7/70308 ,  G03F7/705 ,  G03F7/706

摘要： Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.

摘要翻译： 一些实施例包括用于获得用于调整形成在半导体器件的衬底上的特征的变化的信息的系统和方法。 这样的方法可以包括确定用于形成第一特征的照明系统中的第一光瞳，以及确定用于形成第二特征的第二光瞳。 所述方法还可以包括确定属于仅一个瞳孔的瞳孔部分，并且从瞳孔部分产生修改的瞳孔部分。 可以获得与修改的瞳孔部分相关联的信息，用于控制照明系统的投影透镜组件的一部分。 描述其他实施例。