公开(公告)号：US08530117B2

公开(公告)日：2013-09-10

申请号：US13314219

申请日：2011-12-08

申请人： M. Zaki Ali ,  David E. Brown ,  Elsie A. Fohrenkamm ,  Michael B. Heller

发明人： M. Zaki Ali ,  David E. Brown ,  Elsie A. Fohrenkamm ,  Michael B. Heller

IPC分类号： G03F1/00

CPC分类号： G03F7/0035 ,  G03F7/2016 ,  Y10S430/145

摘要： The present invention involves a method for making a relief image. A film that includes a carrier sheet and an imageable material is used to form a mask image that is opaque to a curing radiation. In one embodiment, the mask image is formed on the carrier sheet while in another embodiment, the mask image is formed on a receptor sheet. The mask image is then transferred to a photosensitive material, such as a flexographic printing plate precursor. The resulting assembly is exposed to the curing radiation resulting in exposed and unexposed areas of the photosensitive material. The carrier sheet or the receptor sheet may be removed from the mask image either before or after exposure to the curing radiation. Finally, the photosensitive material and mask image assembly is developed with a suitable developer to form a relief image.

公开(公告)号：US08198012B2

公开(公告)日：2012-06-12

申请号：US12722572

申请日：2010-03-12

申请人： Gregory L. Zwadlo ,  David E. Brown ,  Elsie A. Fohrenkamm ,  A. Peter Stolt

发明人： Gregory L. Zwadlo ,  David E. Brown ,  Elsie A. Fohrenkamm ,  A. Peter Stolt

IPC分类号： G03F7/00 ,  G03F7/26

CPC分类号： G03F1/68 ,  B41C1/05 ,  B41M5/40 ,  G03F7/2014 ,  G03F7/202 ,  Y10S430/145 ,  Y10T428/24942

摘要： A mask-forming film has a transparent layer between the imageable layer and the carrier sheet, which transparent layer has a refractive index that is lower (by at least 0.04) than that of the carrier sheet or any immediately adjacent layer between it and the carrier sheet. This lower refractive index layer modifies the path of incident radiation during mask image transfer so as to provide steeper shoulder angles in the relief image solid areas. This mask film is used to form a relief image such as in a flexographic printing plate.

摘要翻译： 掩模形成膜在可成像层和载体片之间具有透明层，该透明​​层的折射率比载体片材或其与载体之间的任何紧邻层的折射率低至少（至少0.04） 片。 该低折射率层在掩模图像转印期间改变入射辐射的路径，以便在浮雕图像实心区域中提供较陡的肩部角度。 该掩模膜用于形成诸如柔版印刷版中的浮雕图像。

公开(公告)号：US20100167209A1

公开(公告)日：2010-07-01

申请号：US12722572

申请日：2010-03-12

申请人： Gregory L. Zwadlo ,  David E. Brown ,  Elsie A. Fohrenkamm ,  A. Peter Stolt

发明人： Gregory L. Zwadlo ,  David E. Brown ,  Elsie A. Fohrenkamm ,  A. Peter Stolt

IPC分类号： G03F7/20

CPC分类号： G03F1/68 ,  B41C1/05 ,  B41M5/40 ,  G03F7/2014 ,  G03F7/202 ,  Y10S430/145 ,  Y10T428/24942

摘要： A mask-forming film has a transparent layer between the imageable layer and the carrier sheet, which transparent layer has a refractive index that is lower (by at least 0.04) than that of the carrier sheet or any immediately adjacent layer between it and the carrier sheet. This lower refractive index layer modifies the path of incident radiation during mask image transfer so as to provide steeper shoulder angles in the relief image solid areas. This mask film is used to form a relief image such as in a flexographic printing plate.

摘要翻译： 掩模形成膜在可成像层和载体片之间具有透明层，该透明​​层的折射率比载体片材或其与载体之间的任何紧邻层的折射率低至少（至少0.04） 片。 该低折射率层在掩模图像转印期间改变入射辐射的路径，以便在浮雕图像实心区域中提供较陡的肩部角度。 该掩模膜用于形成诸如柔版印刷版中的浮雕图像。

公开(公告)号：US20090236664A1

公开(公告)日：2009-09-24

申请号：US12471600

申请日：2009-05-26

申请人： David E. Brown ,  Scott D. Luning

发明人： David E. Brown ,  Scott D. Luning

IPC分类号： H01L29/786

CPC分类号： H01L29/66545 ,  H01L21/0206 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7833

摘要： A method for constraining lateral growth of gate caps formed during an epitaxial silicon growth process to achieve raised source/drain regions on poly silicon is presented. The method is appropriate for integration into a manufacturing process for integrated circuit semiconductor devices. The method utilizes selective etch processes, dependant upon the material comprising the protective layer (hard mask) over the gate and the material of the spacers, e.g., oxide mask/nitride spacers, or nitride mask/oxide spacers.

摘要翻译： 提出了一种限制在外延硅生长过程中形成的栅极盖的横向生长以在多晶硅上实现凸起的源极/漏极区域的方法。 该方法适用于集成到集成电路半导体器件的制造工艺中。 该方法利用选择性蚀刻工艺，取决于包含栅极上的保护层（硬掩模）的材料和间隔物的材料，例如氧化物掩模/氮化物间隔物或氮化物掩模/氧化物间隔物。

公开(公告)号：US07553732B1

公开(公告)日：2009-06-30

申请号：US11150923

申请日：2005-06-13

申请人： David E. Brown ,  Scott D. Luning

发明人： David E. Brown ,  Scott D. Luning

IPC分类号： H01L21/336

CPC分类号： H01L29/66545 ,  H01L21/0206 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7833

摘要： A method for constraining lateral growth of gate caps formed during an epitaxial silicon growth process to achieve raised source/drain regions on poly silicon is presented. The method is appropriate for integration into a manufacturing process for integrated circuit semiconductor devices. The method utilizes selective etch processes, dependant upon the material comprising the protective layer (hard mask) over the gate and the material of the spacers, e.g., oxide mask/nitride spacers, or nitride mask/oxide spacers.

摘要翻译： 提出了一种限制在外延硅生长过程中形成的栅极盖的横向生长以在多晶硅上实现凸起的源极/漏极区域的方法。 该方法适用于集成到集成电路半导体器件的制造工艺中。 该方法利用选择性蚀刻工艺，取决于包含栅极上的保护层（硬掩模）的材料和间隔物的材料，例如氧化物掩模/氮化物间隔物或氮化物掩模/氧化物间隔物。

公开(公告)号：US07462524B1

公开(公告)日：2008-12-09

申请号：US11205797

申请日：2005-08-16

申请人： Igor Peidous ,  Martin Gerhardt ,  David E. Brown

发明人： Igor Peidous ,  Martin Gerhardt ,  David E. Brown

IPC分类号： H01L21/336

CPC分类号： H01L29/66545 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7845 ,  H01L29/7848

摘要： Methods are provided for fabricating a stressed MOS device. One method comprises the steps of providing a substrate of a monocrystalline semiconductor material having a first lattice constant, and forming a conductive gate electrode overlying the substrate, the gate electrode having opposing sides and having a thickness. Sidewall spacers are formed on the opposing sides of the gate electrode and trenches are etched in the semiconductor substrate in alignment with the sidewall spacers. A portion of the thickness of the conductive gate electrode is also etched to leave a remaining portion of the conductive gate electrode. A stress inducing layer of material is grown on the remaining portion of the conductive gate electrode and filling the trenches, the stress inducing layer of material having a second lattice constant different than the first lattice constant.

摘要翻译： 提供了制造应力MOS器件的方法。 一种方法包括以下步骤：提供具有第一晶格常数的单晶半导体材料的衬底，以及形成覆盖衬底的导电栅电极，栅电极具有相对的侧面并具有厚度。 侧壁间隔物形成在栅电极的相对侧上，并且沟槽在半导体衬底中被蚀刻以与侧壁间隔物对齐。 还蚀刻导电栅电极的厚度的一部分以留下导电栅电极的剩余部分。 在导电栅电极的剩余部分上生长材料的应力诱导层，并填充沟槽，具有不同于第一晶格常数的第二晶格常数的材料的应力诱导层。

公开(公告)号：US07255942B2

公开(公告)日：2007-08-14

申请号：US10775712

申请日：2004-02-09

申请人： Connie C. Liu ,  Linda L. Zhong ,  Ian J. Beresford ,  Lin Huang ,  Joseph Leigh ,  David E. Brown

发明人： Connie C. Liu ,  Linda L. Zhong ,  Ian J. Beresford ,  Lin Huang ,  Joseph Leigh ,  David E. Brown

IPC分类号： G11B5/66

CPC分类号： G11B5/7325 ,  G11B5/82 ,  G11B5/8404

摘要： Ultra smooth as-deposited composite nickel coatings for use in an information storage system are provided. The composite nickel coatings include an electrolessly deposited nickel layer formed on a sputter deposited nickel layer. The composite nickel coatings have an as-deposited surface roughness of less than about 10 Å. Embodiments include formation of the composite nickel coating on a disk, followed by deposition of an underlayer and magnetic layer thereon to form a magnetic recording medium.

摘要翻译： 提供了用于信息存储系统的超光滑的复合镍涂层。 复合镍涂层包括在溅射沉积的镍层上形成的无电沉积镍层。 复合镍涂层具有小于约的沉积表面粗糙度。 实施例包括在盘上形成复合镍涂层，然后在其上沉积底层和磁性层以形成磁记录介质。

公开(公告)号：US06884733B1

公开(公告)日：2005-04-26

申请号：US10215173

申请日：2002-08-08

申请人： Srikanteswara Dakshina-Murthy ,  Scott A. Bell ,  David E. Brown ,  Philip A. Fisher

发明人： Srikanteswara Dakshina-Murthy ,  Scott A. Bell ,  David E. Brown ,  Philip A. Fisher

IPC分类号： H01L21/033 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/302

CPC分类号： H01L21/32139 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/28123

摘要： A method of producing an integrated circuit eliminates the need to re-oxidize polysilicon gate conductors and lines prior to removal of a hard mask used to form the gate conductors. A layer of polysilicon is provided above a semiconductor substrate. The layer of polysilicon is then doped. A mask material comprising amorphous carbon is provided above the layer of polysilicon, and the layer of mask material is patterned to form a mask. A portion of the layer of polysilicon is removed according to the mask, and the mask is removed.

摘要翻译： 制造集成电路的方法消除了在去除用于形成栅极导体的硬掩模之前再次氧化多晶硅栅极导体和线的需要。 在半导体衬底之上设置多晶硅层。 然后掺杂多晶硅层。 包含无定形碳的掩模材料设置在多晶硅层上方，并且掩模材料层被图案化以形成掩模。 根据掩模去除多晶硅层的一部分，并且去除掩模。

公开(公告)号：US06689688B2

公开(公告)日：2004-02-10

申请号：US10180858

申请日：2002-06-25

申请人： Paul Raymond Besser ,  Simon S. Chan ,  David E. Brown ,  Eric Paton

发明人： Paul Raymond Besser ,  Simon S. Chan ,  David E. Brown ,  Eric Paton

IPC分类号： H01L2144

CPC分类号： H01L21/28518

摘要： A method for forming silicide contacts includes forming a layer on silicon-containing active device regions such as source, drain, and gate regions. The layer contains a metal that is capable of forming one or more metal silicides and a material that is soluble in a first metal silicide but not soluble in a second metal silicide, or is more soluble in the first metal silicide than in the second metal silicide. The layer may be formed by vapor deposition methods such as physical vapor deposition, chemical vapor deposition, evaporation, laser ablation, or other deposition method. A method for forming silicide contacts includes forming a metal layer, then implanting the metal layer and/or underlying silicon layer with a material such as that described above. The material may be implanted in the silicon layer prior to formation of the metal layer. Contacts formed include a first metal silicide and a material that is more soluble in a first metal silicide than in a second metal silicide. The contacts may be part of a semiconductor device including a substrate, active region containing silicon, and silicide contacts disposed over the active region and capable of electrically coupling the active region to other regions such as metallization lines.

摘要翻译： 用于形成硅化物接触的方法包括在诸如源极，漏极和栅极区域的含硅有源器件区域上形成层。 该层包含能够形成一种或多种金属硅化物的金属和可溶于第一金属硅化物但不溶于第二金属硅化物的材料，或者比第二金属硅化物更可溶于第一金属硅化物 。 该层可以通过诸如物理气相沉积，化学气相沉积，蒸发，激光烧蚀或其它沉积方法之类的气相沉积方法形成。 形成硅化物接触的方法包括形成金属层，然后用如上所述的材料注入金属层和/或下层硅层。 在形成金属层之前，材料可以被植入到硅层中。 形成的触点包括第一金属硅化物和在第一金属硅化物中比在第二金属硅化物中更可溶的材料。 触点可以是半导体器件的一部分，其包括衬底，含硅的有源区和设置在有源区上的硅化物触点，并且能够将有源区电耦合到诸如金属化线的其它区域。

公开(公告)号：US06689413B2

公开(公告)日：2004-02-10

申请号：US09895053

申请日：2001-06-29

申请人： Connie C. Liu ,  Linda L. Zhong ,  Ian J. Beresford ,  Lin Huang ,  Joseph Leigh ,  David E. Brown

发明人： Connie C. Liu ,  Linda L. Zhong ,  Ian J. Beresford ,  Lin Huang ,  Joseph Leigh ,  David E. Brown

IPC分类号： B05D512

CPC分类号： G11B5/7325 ,  G11B5/82 ,  G11B5/8404

摘要： Ultra smooth as-deposited composite nickel coatings for use in an information storage system are provided. The composite nickel coatings include an electrolessly deposited nickel layer formed on a sputter deposited nickel layer. The composite nickel coatings have an as-deposited surface roughness of less than about 10 Å. Embodiments include formation of the composite nickel coating on a disk, followed by deposition of an underlayer and magnetic layer thereon to form a magnetic recording medium.

摘要翻译： 提供了用于信息存储系统的超光滑的复合镍涂层。 复合镍涂层包括在溅射沉积的镍层上形成的无电沉积镍层。 复合镍涂层具有小于约的沉积表面粗糙度。 实施例包括在盘上形成复合镍涂层，然后在其上沉积底层和磁性层以形成磁记录介质。