摘要:
Polarity dependent switches for resistive sense memory are described. A memory unit includes a resistive sense memory cell configured to switch between a high resistance state and a low resistance state upon passing a current through the resistive sense memory cell and a semiconductor transistor in electrical connection with the resistive sense memory cell. The semiconductor transistor includes a gate element formed on a substrate. The semiconductor transistor includes a source contact and a bit contact. The gate element electrically connects the source contact and the bit contact. The resistive sense memory cell electrically connects to the bit contact. The source contact and the bit contact are asymmetrically implanted with dopant material.
摘要:
A non-volatile memory cell and associated method of use are disclosed. In accordance with various embodiments, the memory cell includes a switching device and a resistive sense element (RSE) connected in series between first and second control lines. The first control line is supplied with a variable voltage and the second control line is maintained at a fixed reference voltage. A first resistive state of the RSE is programmed by lowering the variable voltage of the first control line below the fixed reference voltage of the second control line to flow a body-drain current through the switching device. A different, second resistive state of the RSE is programmed by raising the variable voltage of the first control line above the fixed reference voltage to flow a drain-source current through the switching device.
摘要:
Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.
摘要:
Aggregation of product data provided from external sources of product data for presentation on an e-commerce website. A set of product data related to a product that is offered for sale in e-commerce is accessed and subjected to an aggregation process. The set of product data is mapped for aggregation with other sets of product data based on an existing mapping or on an absence of an existing mapping. Access is provided to an aggregated set of product data that includes the set of product data that is mapped for aggregation with other sets of product data, for presentation on an e-commerce website.
摘要:
A vertical translation mechanism for reconfiguring the hull form of a reconfigurable vessel having independently movably side hulls and a center hull is disclosed. The vertical translation mechanism includes a hydraulic-force actuator and a nonmetallic bearing. The hydraulic force actuator comprises a rod that is disposed within a hydraulic cylinder. Responsive to changes in hydraulic pressure in the cylinder, the rod is extended or retracted therefrom. Movement of the rod controls the vertical translation of the center hull and its rotational attitude relative to the side hulls.
摘要:
A dynamic channel change technique is disclosed which may be implemented between nodes and a Head End of an access network. Initially a network device may communicate with the Head End via a first downstream channel and a first upstream channel. When the network device receives a dynamic channel change request which includes instructions for the network device to switch to a second downstream channel, the network device may respond by switching from the first downstream channel to the second downstream channel. Thereafter, the network device may communicate with the Head End via the second downstream channel and first upstream channel. Further, according to a specific embodiment, the dynamic channel change request may also include an upstream channel change request for causing the network device to switch from a first upstream channel to a second upstream channel.
摘要:
A microfibrous matrix with embedded supporting particulates/fibers and chemically reactive materials is provided as a filtration system for the removal of contaminants and other harmful agents from liquid and gaseous streams. Such filter may be used for example to protect the intolerant anodes and cathodes of fuel cells from damaging H2S while simultaneously aiding the selective conversion of CO to CO2 in fuel streams predominated by hydrogen. In general, the reactive materials utilized as well as the supporting matrix of fibers may be broadly selected to remove specific contaminants at specific reaction conditions inherent to the application. Such materials may include chemically reactive materials as high surface area carbons, zeolites, silicas, aluminas, inorganic metal oxides, polymer resins, ZnO, ZnO/Carbon, Pt/γ-Al2O3, PtCo/γ-Al2O3, ZnO/SiO2 and various other catalysts, sorbents or reactants. In an alternative embodiment, entrapped sorbents and other reactants may be used to provide a highly efficient gas and/or liquid separation and purification methodology for gas masks, building filtration systems, and/or as polishing media located downstream of traditional packed bed filtration systems so as to achieve the high volume loading/capacity of the packed bed along with the overall contacting efficiency of the outlet polishing layer.
摘要:
A magneto-resistive memory comprises magneto-resistive memory cells comprising two pinned magnetic layers on one side of a free magnetic layer. The pinned magnetic layers are formed with anti-parallel magnetization orientations such that a net magnetic moment of the two layers is substantially zero. The influence of pinned magnetic layers on free magnetic layer magnetization orientations is substantially eliminated, allowing for increased predictability in switching behavior and increased write selectivity of memory cells.
摘要:
A process that advantageously forms MRAM cells without the application of ion beam milling processes. Unlike conventional processes that rely on ion beam milling processes to remove materials from a magnetoresistive sandwich from areas other than areas that will later form MRAM cell bodies, this process forms a layer of photoresist over areas other than those areas that correspond to MRAM cell bodies. The photoresist is lifted off after the deposition of a magnetoresistive sandwich that forms the MRAM cell bodies, thereby safely removing the magnetoresistive sandwich from undesired areas while maintaining the magnetoresistive sandwich in the areas corresponding to MRAM cell bodies.
摘要:
A method of measuring changes in signal level output of an integrated circuit sensor by providing a direct current (DC) or low frequency (AC) bias to the sensor and placing a floating gate semiconductor device on-chip and coupling the floating gate of the semiconductor device with the sensor. As a result, changes in signal level output of the sensor modulate charge at the gate. The semiconductor device in turn converts the modulated charge at the gate into output signals proportional to the changes in the signal level output. The measurement method provides a resolution in the sub-atto range.