公开(公告)号：US20130106410A1

公开(公告)日：2013-05-02

申请号：US13286026

申请日：2011-10-31

申请人： Lianjun Liu ,  Philip Mather ,  Jon Slaughter

发明人： Lianjun Liu ,  Philip Mather ,  Jon Slaughter

IPC分类号： G01R33/02

CPC分类号： G01R33/0029 ,  G01R33/0041 ,  G01R33/04 ,  G01R33/098

摘要： A magnitude and direction of at least one of a reset current and a second stabilization current (that produces a reset field and a second stabilization field, respectively) is determined that, when applied to an array of magnetic sense elements, minimizes the total required stabilization field and reset field during the operation of the magnetic sensor and the measurement of the external field. Therefore, the low field sensor operates optimally (with the highest sensitivity and the lowest power consumption) around the fixed external field operating point. The fixed external field is created by other components in the sensor device housing (such as speaker magnets) which have a high but static field with respect to the low (earth's) magnetic field that describes orientation information.

公开(公告)号：US08390283B2

公开(公告)日：2013-03-05

申请号：US12567496

申请日：2009-09-25

申请人： Phillip Mather ,  Jon Slaughter ,  Nicholas Rizzo

发明人： Phillip Mather ,  Jon Slaughter ,  Nicholas Rizzo

IPC分类号： G01R33/02 ,  G01R33/00

CPC分类号： H01L27/22 ,  B82Y25/00 ,  G01R33/093 ,  H01L43/08

摘要： Three bridge circuits (101, 111, 121), each include magnetoresistive sensors coupled as a Wheatstone bridge (100) to sense a magnetic field (160) in three orthogonal directions (110, 120, 130) that are set with a single pinning material deposition and bulk wafer setting procedure. One of the three bridge circuits (121) includes a first magnetoresistive sensor (141) comprising a first sensing element (122) disposed on a pinned layer (126), the first sensing element (122) having first and second edges and first and second sides, and a first flux guide (132) disposed non-parallel to the first side of the substrate and having an end that is proximate to the first edge and on the first side of the first sensing element (122). An optional second flux guide (136) may be disposed non-parallel to the first side of the substrate and having an end that is proximate to the second edge and the second side of the first sensing element (122).

摘要翻译： 三桥电路（101,111,121）各自包括耦合为惠斯通电桥（100）的磁阻传感器，用于在三个垂直方向（110,120,130）上感测磁场（160），所述三个正交方向（110,120,130）设置有单个钉扎材料 沉积和体晶片设置程序。 三个桥接电路（121）中的一个包括第一磁阻传感器（141），其包括设置在被钉扎层（126）上的第一感测元件（122），第一感测元件（122）具有第一和第二边缘以及第一和第二 侧面，以及第一磁通引导件（132），其布置成不平行于衬底的第一侧面并且具有靠近第一边缘并且在第一感测元件（122）的第一侧上的端部。 可选的第二磁通引导件136可以布置成不平行于衬底的第一侧并且具有靠近第一感测元件（122）的第二边缘和第二侧的端部。

公开(公告)号：US20110147867A1

公开(公告)日：2011-06-23

申请号：US12645749

申请日：2009-12-23

申请人： Jon Slaughter ,  Phillip Mather

发明人： Jon Slaughter ,  Phillip Mather

IPC分类号： H01L27/20 ,  H01L21/98 ,  H01L21/50

CPC分类号： H01L27/22 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  H01L24/03 ,  H01L24/06 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14

摘要： A method of mounting a first integrated circuit (102, 500, 704) on one of a circuit board (300, 700) or a second integrated circuit (706), the first integrated circuit (102, 500, 704) formed over a substrate (104) and having a surface (119) opposed to the substrate (104) and a side (122, 530, 930) substantially orthogonal to the surface (119), and including a conductive element (116, 117, 118, 522, 524, 526, 528, 528′, 528″) coupled to circuitry (102, 500, 704) and formed within a dielectric material (120, 518), the one of the circuit board (300, 700) or the second integrated circuit (706) including a contact point (304, 306, 314), the method including singulating (1104) the first integrated circuit (102, 500, 704) to expose the conductive element (116, 117, 118, 522, 524, 526, 528, 528′, 528″) on the side (222, 630, 1030), and mounting (1108) the first integrated circuit (102, 500, 704) on the one of a circuit board (300, 700) or a second integrated circuit (706) by aligning the conductive element (116, 117, 118, 522, 524, 526, 528, 528′, 528″) exposed on the side (222, 630, 1030) to make electrical contact with the contact point (304, 306, 314).

摘要翻译： 一种将第一集成电路（102,500,704）安装在电路板（300,700）或第二集成电路（706）之一上的方法，所述第一集成电路（102,500,704）形成在衬底 （104），并且具有与所述基板（104）相对的表面（119）和与所述表面（119）基本正交的侧面（122,530,930），并且包括导电元件（116,117,118,522） 耦合到电路（102,500,704）并且形成在介电材料（120,518）内的电路板（300,700）或第二集成电路（120,518）中的一个 （706）包括接触点（304,306,314），所述方法包括对所述第一集成电路（102,500,604）进行单独（1104）以暴露所述导电元件（116,117，118,522,524,526） ，528,582'，528“），并且将第一集成电路（102,500,604）安装（1108）在电路板（300,700）或 第二集成电路（706） 导电元件（116,117,118,522,524,526,528,528'，528“）暴露在侧面（222,630,1030）上以与接触点（304,306,314）电接触， 。

公开(公告)号：US20070243639A1

公开(公告)日：2007-10-18

申请号：US11406566

申请日：2006-04-18

申请人： Srinivas Pietambaram ,  Renu Dave ,  Jon Slaughter ,  JiJun Sun

发明人： Srinivas Pietambaram ,  Renu Dave ,  Jon Slaughter ,  JiJun Sun

IPC分类号： H01L21/00 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1143 ,  Y10T428/1193

摘要： A synthetic antiferromagnet (SAF) structure includes a first ferromagnetic layer, a first insertion layer, a coupling layer, a second insertion layer, and a second ferromagnetic layer. The insertion layers comprise materials selected such that SAF exhibits reduced temperature dependence of antiferromagnetic coupling strength. The insertion layers may include CoFe or CoFeX alloys. The thickness of the insertion layers is selected such that they do not increase the uniaxial anisotropy or deteriorate any other properties.

摘要翻译： 合成反铁磁体（SAF）结构包括第一铁磁层，第一插入层，耦合层，第二插入层和第二铁磁层。 插入层包括选择的材料，使得SAF显示降低的反铁磁耦合强度的温度依赖性。 插入层可以包括CoFe或CoFeX合金。 选择插入层的厚度使得它们不增加单轴各向异性或劣化任何其它性质。

公开(公告)号：US20060017083A1

公开(公告)日：2006-01-26

申请号：US11212321

申请日：2005-08-25

申请人： Jon Slaughter ,  Leonid Savtchenko ,  Anatoli Korkin ,  Herbert Goronkin

发明人： Jon Slaughter ,  Leonid Savtchenko ,  Anatoli Korkin ,  Herbert Goronkin

IPC分类号： H01L21/00 ,  H01L21/8238 ,  H01L21/336 ,  H01L29/94 ,  H01L43/00

CPC分类号： G11C11/16 ,  G11C11/5607

摘要： A multi-state magnetoresistive random access memory device having a pinned ferromagnetic region with a magnetic moment vector fixed in a preferred direction in the absence of an applied magnetic field, a non-ferromagnetic spacer layer positioned on the pinned ferromagnetic region, and a free ferromagnetic region with an anisotropy designed to provide a free magnetic moment vector within the free ferromagnetic region with N stable positions, wherein N is a whole number greater than two, positioned on the non-ferromagnetic spacer layer. The number N of stable positions can be induced by a shape anisotropy of the free ferromagnetic region wherein each N stable position has a unique resistance value.

摘要翻译： 一种多状态磁阻随机存取存储器件，其具有在不存在施加磁场的情况下以优选方向固定的磁矩矢量的固定铁磁区域，位于被钉扎铁磁区域上的非铁磁间隔层，以及自由铁磁性区域 具有各向异性的区域，其设计成在自由铁磁区域内提供位于非铁磁间隔层上的N个稳定位置（其中N是大于2的整数）的自由磁矩向量。 可以通过自由铁磁区域的形状各向异性来诱导稳定位置的数量N，其中每个N稳定位置具有独特的电阻值。

公开(公告)号：US20050133840A1

公开(公告)日：2005-06-23

申请号：US10740338

申请日：2003-12-18

申请人： Srinivas Pietambaram ,  Renu Dave ,  Jon Slaughter ,  Jijun Sun

发明人： Srinivas Pietambaram ,  Renu Dave ,  Jon Slaughter ,  Jijun Sun

IPC分类号： G11C11/16 ,  H01L29/76 ,  H01L31/113 ,  H01L43/08

CPC分类号： G11C11/16 ,  H01L43/08 ,  Y10T428/1121

摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.

摘要翻译： 在磁阻随机存取存储器（MRAM）中有用的磁隧道结（MTJ）具有作为合成反铁磁体（SAF）结构的自由层。 该SAF由被耦合层隔开的两个铁磁层组成。 耦合层具有非磁性的基体材料以及改善耐热性，SAF的耦合强度的控制和磁阻比（MR）的其它材料。 优选的基材是钌，优选的其它材料是钽。 进一步提高这些优点，在​​钽和铁磁层之一的界面处加入钴铁。 此外，耦合层可以具有甚至更多的层，并且所使用的材料可以变化。 耦合层本身也可以是合金。

公开(公告)号：US20050118458A1

公开(公告)日：2005-06-02

申请号：US10980930

申请日：2004-11-03

申请人： Jon Slaughter ,  Renu Dave ,  Srinivas Pietambaram

发明人： Jon Slaughter ,  Renu Dave ,  Srinivas Pietambaram

IPC分类号： G11B5/39 ,  G01R33/09 ,  G11C11/15 ,  H01F10/13 ,  H01F10/32 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10 ,  B32B9/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/10 ,  Y10T428/12431

摘要： An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at least one amorphous layer is provided in an MTJ stack to increase the smoothness of the various layers in the MTJ stack while also enhancing the magnetic performance of the resulting device. Additionally, the alloys of the present invention are also useful in cladding applications to provide electrical flux containment for signal lines in magnetoelectronic devices and as a material for fabricating write heads.

摘要翻译： 公开了一种适用于磁电子器件的钴铁基（CoFe基）磁性合金的非晶层。 在本发明的最优选实施例中，在MTJ叠层中提供至少一个非晶层，以增加MTJ叠层中各层的平滑度，同时也提高所得装置的磁性能。 此外，本发明的合金还可用于包覆应用中，以提供用于磁电子器件中的信号线的电流容纳以及用作制造写入头的材料。