摘要:
1-Sulfonyloxy-2-pyridones of the formula I ##STR1## show good radiation sensitivity over a wide spectral range and are therefore valuable as photoactive compounds in radiation-sensitive mixtures.
摘要:
Disclosed are compounds of the formula I ##STR1## in which X is a phenyl, [1]naphthyl or [2]naphthyl radical each substituted by at least one tert.-butoxycarbonyloxy group and, if appropriate, having one or more than one additional substituent,R.sup.1 is a hydrogen atom, a (C.sub.1 -C.sub.6)-alkyl radical, a (C.sub.6 -C.sub.10)-aryl radical or one of the radicals X andR.sup.2 and R.sup.3 are identical or different and are a (C.sub.1 -C.sub.12)-alkyl radical in which, if appropriate, up to three methylene groups are replaced by bridge members having at least one hetero atom, such as --O--, --S--, --NR.sup.4 --, --CO--, --CO--O--, --CO--NH--, --O--CO--NH--, --NH--CO--NH--, --CO--NH--CO--, --SO.sub.2 --, --SO.sub.2 --O-- or --SO.sub.2 --NH--, a (C.sub.3 -C.sub.12)-alkenyl, (C.sub.3 -C.sub.12)-alkynyl, (C.sub.4 -C.sub.12)-cycloalkyl, (C.sub.4 -C.sub.12)-cycloalkenyl or (C.sub.8 -C.sub.16)-aralkyl radical in which, if appropriate, up to three methylene groups of the aliphatic moiety are replaced by bridge members of the abovementioned type and which can be substituted in the aromatic moiety by fluorine, chlorine or bromine atoms or by (C.sub.1 -C.sub.4)-alkyl, (C.sub.1 -C.sub.4)-alkoxy, nitro, cyano or tert.-butoxycarbonyloxy groups,R.sup.4 being an acyl radical, especially a (C.sub.1 -C.sub.6)-alkanoyl radical.
摘要:
A negative-working radiation-sensitive mixture containinga) a compound which generates a strong acid under the action of actinic radiation, comprising a 1-sulfonyloxy-2-pyridone,b) a compound having at least two groups crosslinkable by acid andc) a polymeric binder which is insoluble in water and soluble or at least swellable in aqueous alkaline solutions.
摘要:
The present invention provides a resist pattern-forming composition capable of forming a resist pattern excellent in etching resistance. The invention also provides a resist pattern formation method using that composition. The composition comprises pure water and a water-soluble resin having aromatic group-containing substituents in its side chain. The composition also contains a free acid or an acid group combined with the water-soluble resin.
摘要:
A resist composition is prepared by reacting an alkali-soluble polymer having a phenolic hydroxyl or carboxyl groups with a vinyl ether compound in an aprotic solvent, such as propylene glycol monomethyl ether acetate, in the presence of an acid catalyst, suspending the reaction by the addition of a base, and directly adding a photoacid generator to the reaction solution. When a dialkyl dicarbonate is used in stead of the vinyl ether compound, a resist composition is prepared by carrying out the reaction in the presence of a basic catalyst and adding a photoacid generator directly to the reaction. Thus resist compositions can be prepared without isolating or purifying an alkali-soluble polymer which has been substituted by a catalytic reaction.
摘要:
Acid-labile group protected hydroxystyrene polymers having recurrent pendant groups such as 1-(2-methanecarbonyl oxyethoxy)ethoxy group and 1-(2-N-methylcarbamatoethoxy) ethoxy group. A resist containing the polymer, a photo acid generator, a base, additives and a solvent is sensitive to UV, electron beam and X-ray. In the resist, acid is formed in the exposed area during irradiation, which deprotects acid-labile group catalytically during application of post-exposure baking. Positive patterns are formed after development using an alkaline solution.
摘要:
A chemically amplified resist material comprising: a) a homopolymer or a copolymer of hydroxystyrene or hydroxystyrene partly protected by a group sensitive to an acid such as a tetrahydropyranyl or t-butoxycarbonyl group, b) a dissolution inhibitor such as poly(N,O-acetal) or phenol or bisphenol protected by a group cleavable with an acid, c) a photosensitive compound capable of generating an acid upon exposure, d) a base capable of degrading upon radiation to regulate the line width in a period between the exposure step and the processing steps after exposure, e) a low-molecular weight phenolic or polyphenolic compound having a structure represented by the following general formula or a mixture of the phenolic or polyphenolic compounds: ##STR1## where n is an integer of 1 to 5, m is an integer of 0 to 4, n+m.ltoreq.5, and p is an integer of 1 to 10, each R is a C.sub.1 -C.sub.12 alkyl group or an unsubstituted or substituted cycloalkyl group or a C.sub.1 -C.sub.5 hydroxyalkyl group, provided that hydrogen atoms may be substituted with a halogen atom and, when m is not less than 2, each R may be the same or different; A represents a hydrocarbon atomic grouping, having a valence of p, including an unsubstituted or substituted C.sub.1 -C.sub.100 alicyclic, chain aliphatic, or aromatic hydrocarbon or a combination thereof with the carbon atoms being optionally substituted with an oxygen atom, provided that when p is 1, A may represent a hydrogen atom and, when p is 2, A may represent --S--, --SO--, --SO.sub.2 --, --O--, --CO--, or a direct bond, and f) a solvent for dissolving the components a) to e).
摘要:
A photosensitive recording material with a layer base and a photosensitive layer, which essentially contains a diazonium salt polycondensation product, a polymeric binder which is insoluble in water and soluble in organic solvents and soluble or at least swellable in aqueous alkaline solutions, a polymerization initiator which forms free radicals when exposed to actinic radiation and a polymerizable ethylenically unsaturated compound containing at least one unsaturated group and having a boiling point at normal pressure of over 100.degree. C., wherein the recording material contains, between the photosensitive layer and the layer base, a photosensitive intermediate layer which essentially contains a diazonium salt polycondensation product and a polymeric binder which is insoluble in water and soluble in organic solvents and soluble or at least swellable in aqueous alkaline solutions.
摘要:
A photosensitive mixture contains a photosensitive compound and a polymeric binder which s a reaction product of a compound represented by the formula ##STR1## wherein X and Y are the same or different, and each denotes oxygen or sulfur,R.sub.1 and R.sub.2 are the same or different, and each denotes an unsubstituted or substituted alkyl, cycloalkyl or alkoxy radical containing from 1 to 6 carbon atoms; an unsubstituted or substituted aryl or aryloxy radical containing from 6 to 10 carbon atoms; or, together with the phosphorus atom, a 5- or 6-membered heterocyclic ring which is unsubstituted or substituted or which carries a fused benzene ring,with a polymer containing active hydrogen. The novel binders used in the mixture can be easily prepared and yield photosensitive layers of good developability and developer resistance.
摘要:
A composition for an anti-reflective coating or a radiation absorbing coating which can form an anti-reflective coating or a radiation absorbing coating having high absorption to exposed radiation in the range of 100 to 450 nm, no diffusion of photo-generated acid to anti-reflective coating and so on, no intermixing of resist and anti-reflective coating layer, good shelf-life stability, and good step coverage and novel compounds and polymers being preferably used in the composition are disclosed. The composition contains an acrylic or methacrylic compound or polymer with an isocyanate or thioisocyanate group bonded through an alkylene group to a side chain thereof or with an amino or hydroxyl group-containing organic chromophore which absorbs radiation in the range of 100 to 450 nm wavelength and is bonded, for example, through an alkylene group to the isocyanate or thioisocyanate group. Resist patters with high resolution are formed on a substrate. A composition for an anti-reflective coating or a radiation absorbing coating are applied on the substrate and baked to form an anti-reflective coating or a radiation absorbing coating layer. Then, a chemically amplified resist is coated thereon and after patternwize exposure, developed. During baking of the anti-reflective coating or radiation absorbing coating, hardening or curing of the coating takes place by the presence of the isocyanate or thioisocyanate group. On the other hand, the exposed radiation having wavelength in the range of 100 to 450 nm is absorbed by organic chromophore.