公开(公告)号：US20100164042A1

公开(公告)日：2010-07-01

申请号：US12347856

申请日：2008-12-31

申请人： Sohei Manabe

发明人： Sohei Manabe

IPC分类号： H01L31/00 ,  H01L31/18 ,  H01L27/146 ,  H01L21/70

CPC分类号： H01L27/1469 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14698

摘要： Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.

摘要翻译： 一种方法的实施方案包括在衬底的前侧形成像素，使衬底变薄，在掺杂硅衬底的背面沉积掺杂硅层，以及将掺杂剂从掺杂硅层扩散到衬底中。 包括形成在薄化衬底的前侧上的像素的装置的实施例，形成在薄化衬底的背面上的掺杂硅层，以及薄化衬底中的区域，以及靠近背面的掺杂剂，其中掺杂剂从 掺杂的硅层进入薄的衬底。 公开和要求保护其他实施例。

公开(公告)号：US20090201395A1

公开(公告)日：2009-08-13

申请号：US12205746

申请日：2008-09-05

申请人： Sohei Manabe ,  Satyadev Nagaraia

发明人： Sohei Manabe ,  Satyadev Nagaraia

IPC分类号： H01L31/0216 ,  H04N5/335

CPC分类号： H04N5/335 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/3572 ,  H04N5/369

摘要： A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that includes a photodiode region, an insulator, and a silicide reflective layer. The photodiode region is formed in the frontside of the semiconductor substrate. The insulation layer is formed on the backside of the semiconductor substrate. The transparent electrode formed on the backside of the insulation layer. The transparent electrode allows light to be transmitted through a back surface of the semiconductor substrate such that when the transparent electrode is biased, carriers are formed in a region in the backside of the semiconductor substrate to reduce leakage current. ARC layers can be used to increase sensitivity of the sensor to selected wavelengths of light.

摘要翻译： 背面照明成像传感器包括具有包括光电二极管区域，绝缘体和硅化物反射层的成像像素的半导体。 光电二极管区域形成在半导体衬底的前侧。 绝缘层形成在半导体衬底的背面。 形成在绝缘层背面的透明电极。 透明电极允许光透射通过半导体衬底的背面，使得当透明电极被偏压时，在半导体衬底的背面的区域中形成载流子以减少漏电流。 ARC层可用于增加传感器对所选波长光的敏感度。

公开(公告)号：US20090200588A1

公开(公告)日：2009-08-13

申请号：US12199737

申请日：2008-08-27

申请人： Sohei Manabe ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Yin Qian

发明人： Sohei Manabe ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Yin Qian

IPC分类号： H01L31/112

CPC分类号： H01L27/14603 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14683

摘要： A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that can include a photodiode region, an insulation layer, and a reflective layer. The photodiode is typically formed in the frontside of the semiconductor substrate. A surface shield layer can be formed on the frontside of the photodiode region. A light reflecting layer can be formed using silicided polysilicon on the frontside of the sensor. The photodiode region receives light from the back surface of the semiconductor substrate. When a portion of the received light propagates through the photodiode region to the light reflecting layer, the light reflecting layer reflects the portion of light received from the photodiode region towards the photodiode region. The silicided polysilicon light reflecting layer also forms a gate of a transistor for establishing a conductive channel between the photodiode region and a floating drain.

摘要翻译： 背面照明成像传感器包括具有可以包括光电二极管区域，绝缘层和反射层的成像像素的半导体。 光电二极管通常形成在半导体衬底的前侧。 表面屏蔽层可以形成在光电二极管区域的前侧。 可以使用传感器前侧的硅化多晶硅形成光反射层。 光电二极管区域从半导体衬底的后表面接收光。 当接收的光的一部分通过光电二极管区域传播到光反射层时，光反射层将从光电二极管区域接收的光的一部分朝向光电二极管区域反射。 硅化多晶硅光反射层还形成晶体管的栅极，用于在光电二极管区域和浮置漏极之间建立导电沟道。

公开(公告)号：US08742311B2

公开(公告)日：2014-06-03

申请号：US13406383

申请日：2012-02-27

申请人： Sohei Manabe

发明人： Sohei Manabe

IPC分类号： H01L27/00

CPC分类号： H01L27/14612 ,  H01L27/1464 ,  H04N5/3741

摘要： A backside illuminated pixel array having a buried channel source follower of a pixel cell which is coupled to output an analog signal directly to a bitline as image data. In one embodiment, the buried channel source follower of a pixel cell is coupled to a source follower power line having a line impedance which is less than that of one or more other signal lines for operating that same pixel cell. In another embodiment, a source follower power line has a line impedance which is less than at least one of a line impedance of a transfer signal line or a line impedance of a reset signal line.

摘要翻译： 背面照明像素阵列，其具有像素单元的掩埋通道源极跟随器，其被耦合以将模拟信号直接输出到位线作为图像数据。 在一个实施例中，像素单元的掩埋沟道源极跟随器耦合到源极跟随器电源线，线路阻抗小于用于操作该相同像素单元的一个或多个其它信号线的线路阻抗。 在另一个实施例中，源极跟随器电源线具有小于传输信号线的线路阻抗或复位信号线的线路阻抗中的至少一个的线路阻抗。

公开(公告)号：US08716768B2

公开(公告)日：2014-05-06

申请号：US13278038

申请日：2011-10-20

申请人： Jeong-Ho Lyu ,  Sohei Manabe

发明人： Jeong-Ho Lyu ,  Sohei Manabe

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L29/0847 ,  H01L21/761 ,  H01L27/14614 ,  H01L27/14627 ,  H01L27/14643 ,  H01L29/0692 ,  H01L29/4238 ,  H01L29/6659

摘要： A device includes a transistor including a source and a drain disposed in a substrate and a gate disposed above the substrate. The gate includes a first longitudinal member disposed above the source and the drain and running substantially parallel to a channel of the transistor. The first longitudinal member is disposed over a first junction isolation area. The gate also includes a second longitudinal member disposed above the source and the drain and running substantially parallel to the channel of the transistor. The second longitudinal member is disposed over a second junction isolation region. The gate also includes a cross member running substantially perpendicular to the channel of the transistor and connecting the first longitudinal member to the second longitudinal member. The cross member is disposed above and between the source and the drain.

摘要翻译： 一种器件包括晶体管，其包括设置在衬底中的源极和漏极，以及设置在衬底上方的栅极。 栅极包括设置在源极和漏极上方并基本上平行于晶体管的沟道延伸的第一纵向构件。 第一纵向构件设置在第一结隔离区域上。 栅极还包括设置在源极和漏极上方并基本上平行于晶体管的沟道延伸的第二纵向构件。 第二纵向构件设置在第二结隔离区域上。 栅极还包括横向部件，该横向部件基本上垂直于晶体管的沟道延伸，并将第一纵向部件连接到第二纵向部件。 横向构件设置在源极和漏极之间和之上。

公开(公告)号：US08642374B2

公开(公告)日：2014-02-04

申请号：US13227400

申请日：2011-09-07

申请人： Jeong-Ho Lyu ,  Sohei Manabe ,  Howard Rhodes

发明人： Jeong-Ho Lyu ,  Sohei Manabe ,  Howard Rhodes

IPC分类号： H01L27/146

CPC分类号： H01L27/14601 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14683

摘要： An image sensor is described in which the imaging pixels have reduced noise by blocking nitridation in selected areas. In one example, a method includes forming a first and second gate oxide layer over a substrate, forming a layer of photoresist over the first gate oxide layer, applying nitridation to the photoresist and the second gate oxide layer such that the first gate oxide layer is protected from the nitridation by the photoresist, and forming a polysilicon gate over the first and second gate oxide layers.

摘要翻译： 描述了一种图像传感器，其中成像像素通过在选定的区域中阻挡氮化而具有降低的噪声。 在一个示例中，一种方法包括在衬底上形成第一和第二栅极氧化物层，在第一栅极氧化物层上形成光致抗蚀剂层，向光致抗蚀剂和第二栅极氧化物层施加氮化，使得第一栅极氧化物层为 防止光致抗蚀剂的氮化，并在第一和第二栅极氧化物层上形成多晶硅栅极。

公开(公告)号：US20130113969A1

公开(公告)日：2013-05-09

申请号：US13288880

申请日：2011-11-03

申请人： Sohei Manabe ,  Keh-Chiang Ku ,  Vincent Venezia ,  Hsi-Chih Tai ,  Duli Mao ,  Howard E. Rhodes

发明人： Sohei Manabe ,  Keh-Chiang Ku ,  Vincent Venezia ,  Hsi-Chih Tai ,  Duli Mao ,  Howard E. Rhodes

IPC分类号： H04N5/335

CPC分类号： H01L27/14643 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14641

摘要： Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image sensor includes a transfer gate. In another embodiment, an offset of the implant region of the first pixel structure from the transfer gate of the second pixel structure corresponds to the implant angle.

摘要翻译： 用于提高图像传感器中像素结构的完整容量的技术和机制。 在一个实施例中，图像传感器的第一像素结构包括植入区域，其中植入区域的偏斜对应于植入角度，并且图像传感器的第二像素结构包括传输门。 在另一个实施例中，第一像素结构的注入区域与第二像素结构的传输门的偏移对应于植入角度。

公开(公告)号：US20130099296A1

公开(公告)日：2013-04-25

申请号：US13278038

申请日：2011-10-20

申请人： Jeong-Ho Lyu ,  Sohei Manabe

发明人： Jeong-Ho Lyu ,  Sohei Manabe

IPC分类号： H01L31/113 ,  H01L21/336

CPC分类号： H01L29/0847 ,  H01L21/761 ,  H01L27/14614 ,  H01L27/14627 ,  H01L27/14643 ,  H01L29/0692 ,  H01L29/4238 ,  H01L29/6659

摘要： A device includes a transistor including a source and a drain disposed in a substrate and a gate disposed above the substrate. The gate includes a first longitudinal member disposed above the source and the drain and running substantially parallel to a channel of the transistor. The first longitudinal member is disposed over a first junction isolation area. The gate also includes a second longitudinal member disposed above the source and the drain and running substantially parallel to the channel of the transistor. The second longitudinal member is disposed over a second junction isolation region. The gate also includes a cross member running substantially perpendicular to the channel of the transistor and connecting the first longitudinal member to the second longitudinal member. The cross member is disposed above and between the source and the drain.

摘要翻译： 一种器件包括晶体管，其包括设置在衬底中的源极和漏极，以及设置在衬底上方的栅极。 栅极包括设置在源极和漏极上方并基本上平行于晶体管的沟道延伸的第一纵向构件。 第一纵向构件设置在第一结隔离区域上。 栅极还包括设置在源极和漏极上方并基本上平行于晶体管的沟道延伸的第二纵向构件。 第二纵向构件设置在第二结隔离区域上。 栅极还包括横向部件，该横向部件基本上垂直于晶体管的沟道延伸，并将第一纵向部件连接到第二纵向部件。 横向构件设置在源极和漏极之间和之上。

公开(公告)号：US08415727B2

公开(公告)日：2013-04-09

申请号：US13198574

申请日：2011-08-04

申请人： Sohei Manabe

发明人： Sohei Manabe

IPC分类号： H01L27/146

CPC分类号： H01L27/1469 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14698

摘要： Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.

摘要翻译： 一种方法的实施方案包括在衬底的前侧形成像素，使衬底变薄，在掺杂硅衬底的背面沉积掺杂硅层，以及将掺杂剂从掺杂硅层扩散到衬底中。 包括形成在薄化衬底的前侧上的像素的装置的实施例，形成在薄化衬底的背面上的掺杂硅层，以及薄化衬底中的区域，以及靠近背面的掺杂剂，其中掺杂剂从 掺杂的硅层进入薄的衬底。 公开和要求保护其他实施例。

公开(公告)号：US08089036B2

公开(公告)日：2012-01-03

申请号：US12433598

申请日：2009-04-30

申请人： Sohei Manabe

发明人： Sohei Manabe

IPC分类号： H01L27/00 ,  H01J40/14

CPC分类号： H04N5/353 ,  H01L27/14609 ,  H04N5/357 ,  H04N5/37452

摘要： An image sensor includes a photodiode to accumulate an image charge and a storage transistor to store the image charge. A transfer transistor is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge to a readout node and a reset transistor is coupled to the readout node. A controller is configured to apply a negative voltage to a gate of the storage transistor before activating the gate of the storage transistor to store the image charge.

摘要翻译： 图像传感器包括用于积累图像电荷的光电二极管和用于存储图像电荷的存储晶体管。 传输晶体管耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。 输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷传送到读出节点，并且复位晶体管耦合到读出节点。 控制器被配置为在激活存储晶体管的栅极以存储图像电荷之前，向存储晶体管的栅极施加负电压。