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    Electroluminescence element and a light emitting device using the same
    31.
    发明授权
    Electroluminescence element and a light emitting device using the same 有权
    电致发光元件和使用其的发光器件

    公开(公告)号：US07045955B2

    公开(公告)日：2006-05-16

    申请号：US10635959

    申请日：2003-08-07

    申请人： Satoshi Seo ,  Hiroko Yamazaki

    发明人： Satoshi Seo ,  Hiroko Yamazaki

    IPC分类号： H05B33/00 ,  H05B33/14

    CPC分类号： H01L51/5096 ,  H01L27/3244 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/5203 ,  H01L2251/5315 ,  H01L2251/558

    摘要： An EL element which is thicker and lower-voltage drive without doping acceptor or donor than the conventional one. An EL element in which an electroluminescent film 103 containing an organic compound which can provide electroluminescent, a floating electrode 104, an electron transport supporting layer 105 and a cathode 102 are in order laminated on an anode 101. A film thickness of the electroluminescent film 103 is on the order of a conventional film thickness (on the order of approximately 100 nm), and the electron transport supporting layer 105 may also have a film thickness on the order of the electroluminescent film 103. The EL element can be driven at lower voltage than the conventional one by introducing a hole blocking material into an electron transport supporting layer.

    摘要翻译： 与常规的EL元件相比，没有掺杂受体或者掺杂剂的较低和较低电压驱动的EL元件。 可以在阳极101上依次叠层含有可提供电致发光的有机化合物的电致发光膜103，浮置电极104，电子传输支持层105和阴极102的EL元件。 电致发光膜103的膜厚度为常规膜厚度（大约100nm左右）的数量级，并且电子传输支持层105也可以具有电致发光膜103的数量级的膜厚度。 通过将空穴阻挡材料引入到电子传输支撑层中，EL元件可以以比传统EL元件低的电压被驱动。

    Light emitting device and manufacturing method therefor
    32.
    发明申请
    Light emitting device and manufacturing method therefor 有权
    发光元件及其制造方法

    公开(公告)号：US20050236969A1

    公开(公告)日：2005-10-27

    申请号：US10992854

    申请日：2004-11-22

    申请人： Satoshi Seo ,  Hiroko Yamazaki

    发明人： Satoshi Seo ,  Hiroko Yamazaki

    IPC分类号： H05B33/26 ,  H01L51/00 ,  H01L51/50 ,  H05B33/00

    CPC分类号： H01L51/5092 ,  H01L51/0035 ,  H01L51/0051 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/5088 ,  H01L2251/5315

    摘要： To provide a light emitting element having a top emission structure, which can be easily manufactured without considering an ionization potential of an electrode (particularly an electrode in contact with a substrate) and a manufacturing method therefor. A light emitting device having the top emission structure according to the present invention includes: a first electrode (101) formed of general-purpose metal (specifically, a wiring material such as Ti or Al) having a light-shielding property or reflectivity; a conductive polymer layer (102) formed by applying a conductive polymer material onto the first electrode (101); an electroluminescence film (103) formed in contact with the conductive polymer layer (102); and a light-transmissive second electrode (104) formed on the electroluminescence film 103, in which the conductive polymer layer (102) is formed of materials including a redox polymer etc., while being free of problems regarding work function (as shown in FIG. 1A).

    摘要翻译： 提供一种具有顶部发射结构的发光元件及其制造方法，其可以容易地制造而不考虑电极（特别是与基板接触的电极）的电离电位。 根据本发明的具有顶部发射结构的发光器件包括：由具有遮光性或反射率的通用金属（具体地，诸如Ti或Al的布线材料）形成的第一电极（101） 通过将导电聚合物材料施加到所述第一电极（101）上形成的导电聚合物层（102）; 形成为与导电聚合物层（102）接触的电致发光膜（103）; 以及形成在电致发光膜103上的透光性第二电极（104），其中导电性聚合物层（102）由包含氧化还原性聚合物等的材料形成，同时没有关于功函数的问题（如图 1 A）。

    Light emitting device and method of manufacturing method thereof and thin film forming apparatus
    35.
    发明授权
    Light emitting device and method of manufacturing method thereof and thin film forming apparatus 有权
    发光元件及其制造方法及薄膜形成装置

    公开(公告)号：US07744949B2

    公开(公告)日：2010-06-29

    申请号：US12327871

    申请日：2008-12-04

    申请人： Toshimitsu Konuma ,  Hiroko Yamazaki

    发明人： Toshimitsu Konuma ,  Hiroko Yamazaki

    IPC分类号： B05D5/06 ,  B05D1/32 ,  C23C16/00 ,  C23C14/00

    CPC分类号： H01L51/56 ,  H01L27/3244 ,  H01L2251/5315

    摘要： A method of manufacturing a light emitting device of upward emission type and a thin film forming apparatus used in the method are provided. A plurality of film forming chambers are connected to a first transferring chamber. The plural film forming chambers include a metal material evaporation chamber, an EL layer forming chamber, a sputtering chamber, a CVD chamber, and a sealing chamber. By using this thin film forming apparatus, an upward emission type EL element can be fabricated without exposing the element to the outside air. As a result, a highly reliable light emitting device is obtained.

    摘要翻译： 提供一种制造上述发射型发光器件的方法和该方法中使用的薄膜形成装置。 多个成膜室连接到第一传送室。 多个成膜室包括金属材料蒸发室，EL层形成室，溅射室，CVD室和密封室。 通过使用该薄膜形成装置，可以制造向上发射型EL元件而不将元件暴露于外部空气。 结果，获得了高度可靠的发光器件。

    Light emitting device
    36.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US07488986B2

    公开(公告)日：2009-02-10

    申请号：US10278855

    申请日：2002-10-24

    申请人： Shunpei Yamazaki ,  Toshimitsu Konuma ,  Hiroko Yamazaki

    发明人： Shunpei Yamazaki ,  Toshimitsu Konuma ,  Hiroko Yamazaki

    IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L33/00 ,  H01L27/15 ,  H01L31/12

    CPC分类号： H01L51/5215 ,  H01L27/3246 ,  H01L27/3248 ,  H01L51/5008 ,  H01L51/524 ,  H01L51/5253 ,  H01L2251/5315 ,  H01L2251/5353

    摘要： In an active matrix type light emitting device, an upper surface injection type light emitting device in which an anode formed on the upper portion of the organic compound layer becomes an electrode for taking out the light is provided. In a light emitting element consisting of an cathode, an organic compound layer and an anode, it is characterized in that a protector is formed on the interface between the anode being an electrode for taking out the light and the organic compound layer. Noted that the protector formed on the organic compound layer has a transmittance of 70-100%, and the damage given to the organic compound layer when the anode is formed by a sputtering method can be prevented.

    摘要翻译： 在有源矩阵型发光器件中，提供了其中形成在有机化合物层的上部上的阳极成为取出光的电极的上表面注入型发光器件。 在由阴极，有机化合物层和阳极组成的发光元件中，其特征在于，在作为取出光的电极的阳极和有机化合物层之间的界面上形成保护膜。 注意到在有机化合物层上形成的保护膜具有70-100％的透射率，并且可以防止当通过溅射法形成阳极时对有机化合物层的损害。

    Light emitting device
    37.
    发明授权
    Light emitting device 失效
    发光装置

    公开(公告)号：US06734457B2

    公开(公告)日：2004-05-11

    申请号：US10304410

    申请日：2002-11-26

    申请人： Hiroko Yamazaki ,  Atsushi Tokuda ,  Tetsuo Tsutsui

    发明人： Hiroko Yamazaki ,  Atsushi Tokuda ,  Tetsuo Tsutsui

    IPC分类号： H01L3524

    CPC分类号： H01L51/5016 ,  H01L51/0059 ,  H01L51/0061 ,  H01L51/0062 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0077 ,  H01L51/0079 ,  H01L51/008 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0094 ,  H01L51/5048 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/508 ,  H01L51/5206 ,  H01L51/5234 ,  H01L2251/552 ,  Y10S428/917

    摘要： A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.

    摘要翻译： 通过简化器件结构并避免使用不稳定的材料，提供了具有高效率和改进的稳定性并且可以通过更简单的工艺制造的三重态发光器件。 在三重态发光器件中常规使用的不使用空穴阻挡层的多层器件结构中，即在衬底上形成阳极的器件结构，由空穴传输材料构成的空穴传输层，电子 由电子传输材料和能够三重发光的掺杂剂构成的传输和发光层和阴极，按照所述顺序层叠空穴传输材料和电子传输材料的组合以及电子的组合 运输材料和掺杂剂材料被优化。

    Light emitting device
    38.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US07737437B2

    公开(公告)日：2010-06-15

    申请号：US12335747

    申请日：2008-12-16

    申请人： Hiroko Yamazaki ,  Atsushi Tokuda ,  Tetsuo Tsutsui

    发明人： Hiroko Yamazaki ,  Atsushi Tokuda ,  Tetsuo Tsutsui

    IPC分类号： H01L51/40

    CPC分类号： H01L51/5016 ,  H01L51/0059 ,  H01L51/0061 ,  H01L51/0062 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0077 ,  H01L51/0079 ,  H01L51/008 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0094 ,  H01L51/5048 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/508 ,  H01L51/5206 ,  H01L51/5234 ,  H01L2251/552 ,  Y10S428/917

    摘要： A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.

    摘要翻译： 通过简化器件结构并避免使用不稳定的材料，提供了具有高效率和改进的稳定性并且可以通过更简单的工艺制造的三重态发光器件。 在三重态发光器件中常规使用的不使用空穴阻挡层的多层器件结构中，即在衬底上形成阳极的器件结构，由空穴传输材料构成的空穴传输层，电子 由电子传输材料和能够三重发光的掺杂剂构成的传输和发光层和阴极，按照所述顺序层叠空穴传输材料和电子传输材料的组合以及电子的组合 运输材料和掺杂剂材料被优化。

    Light emitting device
    39.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US06956240B2

    公开(公告)日：2005-10-18

    申请号：US10282247

    申请日：2002-10-29

    申请人： Shunpei Yamazaki ,  Toshimitsu Konuma ,  Hiroko Yamazaki

    发明人： Shunpei Yamazaki ,  Toshimitsu Konuma ,  Hiroko Yamazaki

    IPC分类号： H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

    CPC分类号： H01L51/5088 ,  H01L27/1214 ,  H01L27/3244 ,  H01L51/5008 ,  H01L51/5215 ,  H01L51/524 ,  H01L51/5253 ,  H01L2251/5315 ,  H01L2251/5353 ,  Y10S257/91 ,  Y10S257/911 ,  Y10S257/918

    摘要： In an active matrix type light emitting device, a top surface exit type light emitting device in which an anode formed at an upper portion of an organic compound layer becomes a light exit electrode is provided. In a light emitting element made of a cathode, an organic compound layer and an anode, a protection film is formed in an interface between the anode that is a light exit electrode and the organic compound layer. The protection film formed on the organic compound layer has transmittance in the range of 70 to 100%, and when the anode is deposited by use of the sputtering method, a sputtering damage to the organic compound layer can be inhibited from being inflicted.

    摘要翻译： 在有源矩阵型发光器件中，提供其中形成在有机化合物层的上部处的阳极成为光出射电极的顶表面出射型发光器件。 在由阴极，有机化合物层和阳极制成的发光元件中，在作为光出射电极的阳极和有机化合物层之间的界面中形成保护膜。 在有机化合物层上形成的保护膜的透过率为70〜100％，通过溅射法沉积阳极，能够抑制对有机化合物层的溅射损伤。