公开(公告)号：US07224003B2

公开(公告)日：2007-05-29

申请号：US11387819

申请日：2006-03-24

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/0328

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US07042061B2

公开(公告)日：2006-05-09

申请号：US10727515

申请日：2003-12-05

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/06 ,  H01L27/148

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US06690423B1

公开(公告)日：2004-02-10

申请号：US09272337

申请日：1999-03-19

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H04N314

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态摄像装置包括具有表面的p型硅衬底，在其上形成用于构成光电转换区域的p +扩散层和读取MOS场效应晶体管的漏极。 由p +扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在p +扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US5614425A

公开(公告)日：1997-03-25

申请号：US622270

申请日：1996-03-27

申请人： Koji Kimura ,  Hiroshi Naruse

发明人： Koji Kimura ,  Hiroshi Naruse

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/732 ,  H01L29/737 ,  H01L21/265

CPC分类号： H01L29/66287 ,  H01L29/732 ,  Y10S148/163

摘要： An N type diffusion layer as a collector is formed on a P type silicon substrate, and a field oxide film is formed on this diffusion layer. An MoSi.sub.2 film is formed on this field oxide film and a first opening is formed on those field oxide film and MoSi.sub.2 film to expose the diffusion layer. An N type layer is selectively epitaxially grown only on the bottom of the first opening. A base layer is formed on the N type layer, the side wall of the first opening and the MoSi.sub.2 film. The base layer on the N type layer is formed by epitaxial growth, while the base layer on the side wall of the first opening and the MoSi.sub.2 film is formed in a polycrystalline state. A first silicon oxide film is formed on this based layer. The first silicon oxide film is thinner on the polycrystalline base layer than on the epitaxially grown base layer. The first silicon oxide film is subjected to anisotropic etching to expose only the surface of the epitaxially grown base layer. An N type silicon film as an emitter is selectively grown only on this exposed base layer.

摘要翻译： 在P型硅衬底上形成作为集电体的N型扩散层，在该扩散层上形成场氧化膜。 在该场氧化膜上形成MoSi 2膜，在该场氧化膜和MoSi 2膜上形成第一开口，使扩散层露出。 仅在第一开口的底部选择性地外延生长N型层。 在N型层，第一开口的侧壁和MoSi 2膜上形成基层。 通过外延生长形成N型层上的基底层，而第一开口的侧壁上的基底层和MoSi 2膜形成为多晶态。 在该基层上形成第一氧化硅膜。 第一氧化硅膜在多晶基底层上比在外延生长的基底层上薄。 对第一氧化硅膜进行各向异性蚀刻，仅露出外延生长的基底层的表面。 作为发射极的N型硅膜仅在该露出的基底层上选择性地生长。

公开(公告)号：US5583256A

公开(公告)日：1996-12-10

申请号：US494735

申请日：1995-06-26

申请人： Hiroshi Naruse ,  Hideki Mizuta ,  Shinichi Umeda ,  Teruyuki Nagata

发明人： Hiroshi Naruse ,  Hideki Mizuta ,  Shinichi Umeda ,  Teruyuki Nagata

IPC分类号： C07C275/14 ,  C07D233/34

CPC分类号： C07D233/34 ,  C07C275/14

摘要： A novel bis-urea compound, preparation process of the compound, and preparation process of 1,3-dialkyl-2-imidazolidinone are disclosed and the disclosure provides a novel preparation process of 1,3-dialkyl-2-imidazolidinone and simultaneously enables effective utilization of N,N',N"-trialkyldiethylentriamine which lacks a large amount use and is desired to develop new application.

摘要翻译： 公开了一种新的双脲化合物，该化合物的制备方法和1,3-二烷基-2-咪唑烷酮的制备方法，本公开提供了1,3-二烷基-2-咪唑烷酮的新型制备方法，同时使得有效 利用缺乏大量使用的N，N'，N“ - 三烷基二乙基三胺，需要开发新的应用。

公开(公告)号：US5356821A

公开(公告)日：1994-10-18

申请号：US104907

申请日：1993-08-12

申请人： Hiroshi Naruse ,  Shin-ichi Taka

发明人： Hiroshi Naruse ,  Shin-ichi Taka

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/49 ,  H01L29/737 ,  H01L21/265

CPC分类号： H01L29/7378 ,  H01L21/8248 ,  H01L21/8249 ,  H01L29/4966 ,  Y10S148/009

摘要： A semiconductor integrated circuit according to the present invention comprises a semiconductor substrate, a plurality of MOS field effect transistors each formed on a surface region of the semiconductor substrate and having source and drain regions, a gate insulating film formed on a region between the source and drain regions, and a gate electrode formed on the gate insulating film. The gate electrode includes a polycrystalline SiGe-mixed crystal which is expressed by Si.sub.1-x Ge.sub.x (1>x>0).

摘要翻译： 根据本发明的半导体集成电路包括半导体衬底，多个MOS场效应晶体管，其各自形成在半导体衬底的表面区域上并具有源极和漏极区，栅极绝缘膜形成在源极和源极之间的区域上 漏极区域和形成在栅极绝缘膜上的栅电极。 栅电极包括由Si1-xGex（1> x> 0）表示的多晶SiGe混合晶体。

公开(公告)号：US4778794A

公开(公告)日：1988-10-18

申请号：US870495

申请日：1986-06-04

申请人： Hiroshi Naruse ,  Masashi Takesada ,  Osamu Hayaishi ,  Yasuyoshi Watanabe

发明人： Hiroshi Naruse ,  Masashi Takesada ,  Osamu Hayaishi ,  Yasuyoshi Watanabe

IPC分类号： C07D475/04 ,  A61K31/40 ,  A61K31/505 ,  A61K31/519 ,  A61P25/00 ,  A61P25/18 ,  A61P43/00 ,  A61K31/50 ,  A61K31/495

CPC分类号： A61K31/505

摘要： A pharmaceutical composition for the treatment of infantile autism which contains tetrahydrobiopterin or a derivative thereof as a major effective ingredient and 5-hydroxytryptophan and/or L-DOPA as an optional auxiliary effective ingredient is provided.

摘要翻译： 提供了一种用于治疗婴幼儿自闭症的药物组合物，其包含四氢生物蝶呤或其衍生物作为主要有效成分和5-羟色氨酸和/或L-DOPA作为任选的辅助有效成分。

公开(公告)号：US09840028B2

公开(公告)日：2017-12-12

申请号：US13195178

申请日：2011-08-01

申请人： Yasuhiro Matsumoto ,  Koichi Mori ,  Hiroshi Naruse ,  Michiharu Eta ,  Hiroki Mori

发明人： Yasuhiro Matsumoto ,  Koichi Mori ,  Hiroshi Naruse ,  Michiharu Eta ,  Hiroki Mori

IPC分类号： B28D1/22 ,  C03B35/18 ,  C03B33/09

CPC分类号： B28D1/221 ,  C03B33/091 ,  C03B35/189 ,  Y02P40/57 ,  Y10T225/12

摘要： Provided is a cleaving method for a glass film (G) including: cleaving, during conveyance of the glass film (G) in a predetermined direction, the glass film (G) continuously along a preset cleaving line (8) extending in a predetermined conveying direction (a) by a thermal stress generated through localized heating performed along the preset cleaving line (8) and through cooling of a locally heated region (H); dividing the glass film (G) in a width direction of the glass film (G); diverting, after the dividing, adjacent divided glass films (10), which are obtained by the dividing, so that the adjacent divided glass films (10) are separated in a front and rear direction of the adjacent divided glass films; and forming a predetermined widthwise clearance between the adjacent divided glass films after the dividing of the glass film (G) and before the diverting of the adjacent divided glass films (10).

公开(公告)号：US09511004B2

公开(公告)日：2016-12-06

申请号：US13471725

申请日：2012-05-15

申请人： Hiroshi Naruse ,  Yoshimitsu Tanabe ,  Osamu Kohgo ,  Masataka Miyasato ,  Hideyuki Ueki ,  Chidzuru Inami ,  Shunsuke Miyata

发明人： Hiroshi Naruse ,  Yoshimitsu Tanabe ,  Osamu Kohgo ,  Masataka Miyasato ,  Hideyuki Ueki ,  Chidzuru Inami ,  Shunsuke Miyata

IPC分类号： A61K6/083 ,  A61K6/09 ,  C08L75/16 ,  C07C271/24 ,  C07C271/28 ,  C07C271/32

CPC分类号： A61K6/083 ,  A61K6/09 ,  C07C271/24 ,  C07C271/28 ,  C07C271/32 ,  C07C2601/14 ,  C07C2603/66 ,  C08L75/16

摘要： The present invention provides a dental material, a dental material composition and a dental restorative material that exhibit small polymerization shrinkage particularly during curing and are producible at low cost on the industrial scale. The dental material of the present invention includes a specific urethane (meth)acrylic compound represented by Formula (1) described below.

公开(公告)号：US09314546B2

公开(公告)日：2016-04-19

申请号：US13508009

申请日：2010-11-18

申请人： Noriaki Asada ,  Shinya Aoki ,  Hiroshi Naruse ,  Shoichi Miyakoshi ,  Masami Arata

发明人： Noriaki Asada ,  Shinya Aoki ,  Hiroshi Naruse ,  Shoichi Miyakoshi ,  Masami Arata

IPC分类号： A61L24/00 ,  A61L15/58 ,  A61L15/00 ,  A61L15/44 ,  A61L26/00 ,  C08L33/06 ,  A61L24/04

CPC分类号： A61L24/043 ,  A61L15/00 ,  A61L15/44 ,  A61L15/58 ,  A61L26/0014 ,  C08L33/06

摘要： The adhesive composition for soft tissues, the adhesive composition for wound dressing or the wound dressing agent composition of the present invention is an adhesive composition for soft tissues, an adhesive composition for wound dressing or a wound dressing agent composition, comprising a monomer (A), a polymer (B) and a polymerization initiator composition (C) containing an organoboron compound, and is characterized by having a viscosity of 0.4 to 75,000 cp within 30 seconds after mixing of the components (A), (B) and (C). The composition of the present invention not only has low toxicity, low harmfulness and high adhesive strength but also is excellent in workability during application and is capable of forming films of excellent properties.

摘要翻译： 本发明的软组织用粘合剂组合物，伤口敷料用粘合剂组合物或伤口敷料剂组合物是软组织用​​粘合剂组合物，伤口敷料用粘合剂组合物或伤口敷料剂组合物，其含有单体（A） ，聚合物（B）和含有有机硼化合物的聚合引发剂组合物（C），其特征在于组分（A），（B）和（C）混合后30秒内的粘度为0.4至75,000cp， 。 本发明的组合物不仅毒性低，危害性低，粘合强度高，而且涂布时的加工性也优异，能够形成优异的膜。