公开(公告)号：US08834765B2

公开(公告)日：2014-09-16

申请号：US13636101

申请日：2011-03-17

申请人： Junichi Esaki ,  Hiroyuki Kato ,  Yasuhiro Matsumoto

发明人： Junichi Esaki ,  Hiroyuki Kato ,  Yasuhiro Matsumoto

IPC分类号： B29C45/14

CPC分类号： H01F41/0246 ,  H01F27/255 ,  H01F27/323 ,  H01F41/122 ,  H01F2017/048 ,  Y10T29/49073

摘要： [Problem] To provide a method of manufacture for an encased coil body, which is capable of easily manufacturing an encased coil body which is configured so as to be encased in a state where a coil is enclosed within an electrically insulating resin and is also capable of favorably preventing the coil from positional misalignment or deformation at the time of the manufacture.[Means for Solution] The method includes injection-molding a resin covering layer which encases the coil 10 with a thermoplastic resin, in which the injection-molding is carried out such that the injection-molding step is divided into a primary molding step and a secondary molding step, in which the primary molding step includes contacting a primary molding die to an inner circumferential surface of the coil 10 and molding a primary molded body 22-1 which includes an outer circumferential covering portion 46 in a state where the coil 10 is constrained so as to be positioned in a radial direction, and the secondary molding step includes, after the primary molding step, setting the primary molded body 22-1 along with the coil 10 to a secondary molding die and molding a secondary molded body which includes an inner circumferential covering portion.

摘要翻译： 本发明提供一种封装线圈体的制造方法，其能够容易地制造被包围的线圈体，该线圈体被构造成在线圈封闭在电绝缘树脂内的状态下被包围，并且还能够 有利地防止线圈在制造时的位置不对准或变形。 [解决方案]该方法包括用热塑性树脂注射包封线圈10的树脂覆盖层，其中进行注射成型，使得注射成型步骤被分成初级模塑步骤和 二次模塑步骤，其中初级模塑步骤包括使初级模具模具与线圈10的内圆周表面接触，并且在线圈10是状态下模制包括外圆周覆盖部分46的一次模制体22-1 被限制为沿径向定位，并且二次成型步骤在初次模制步骤之后包括将一次成型体22-1与线圈10一起设置到二次模制模具并且模制二次模制体，该二次模制体包括 内圆周覆盖部分。

公开(公告)号：US20130152320A1

公开(公告)日：2013-06-20

申请号：US13820068

申请日：2012-04-19

申请人： Yasuhiro Matsumoto

发明人： Yasuhiro Matsumoto

IPC分类号： B60S1/32

CPC分类号： B60S1/32 ,  B60S1/3801 ,  B60S1/486 ,  B60S1/522 ,  B60S1/524 ,  B60S2001/3815

摘要： A vehicle wiper apparatus is applied to a vehicle provided with a wiping surface including a first wiping area at a passenger's seat side and a second wiping area at a driver's seat side. A first wiper includes a first wiper blade configured to wipe the first wiping area. A second wiper includes a second wiper blade configured to wipe the second wiping area. A washer nozzle is arranged on the first wiper to supply washing liquid to the second wiping area. The washer nozzle sprays washing liquid so that the supply of washing liquid toward a front side in an advancing direction of the second wiper blade switches to a rear side in the advancing direction when the second wiper blade moves from the first reversing position to the second reversing position during the wiping operation of the first and second wipers.

摘要翻译： 将车辆用刮水器装置应用于设置有乘客座侧的第一擦拭区域和驾驶员座侧的第二擦拭区域的擦拭面的车辆。 第一擦拭器包括构造成擦拭第一擦拭区域的第一刮水片。 第二擦拭器包括构造成擦拭第二擦拭区域的第二刮片。 洗涤器喷嘴布置在第一擦拭器上，以将洗涤液体供应到第二擦拭区域。 洗涤器喷嘴喷射洗涤液体，使得当第二刮水器片从第一反转位置移动到第二反转时，向第二刮水片的前进方向前方的洗涤液体在前进方向上切换到后侧 在第一和第二擦拭器的擦拭操作期间的位置。

公开(公告)号：US08333637B2

公开(公告)日：2012-12-18

申请号：US12515406

申请日：2007-11-05

申请人： Yasuhiro Matsumoto

发明人： Yasuhiro Matsumoto

IPC分类号： B24B1/00

CPC分类号： B29D11/00596 ,  B29C33/424 ,  B29L2011/0058 ,  G02B5/10

摘要： There are provided a method of manufacturing a metal mold suitable for forming, for example, a reflection mirror for a projection optical system and a reflection mirror for the projection optical system manufactured by the method thereof. The method includes a first process of cutting or grinding a metal mold material MM to trim the shape of the transfer optical surface and a second process of radiating the electron beam onto the transfer optical surface so as to perform smoothing process. By radiation of the electron beam, tool makes and the like created on the metal mold material MM in the first process can be erased so that the surface can be smoothed while maintaining the shape of the transfer optical surface.

摘要翻译： 提供了一种制造金属模具的方法，该金属模具适用于形成例如用于投影光学系统的反射镜和用于通过其方法制造的投影光学系统的反射镜。 该方法包括切割或研磨金属模材料MM以修整转印光学表面的形状的第一工艺和将电子束辐射到转印光学表面上以进行平滑处理的第二工序。 通过电子束的辐射，可以擦除在第一工序中在金属模具材料MM上产生的工具等等，从而可以在保持转印光学表面的形状的同时平滑表面。

公开(公告)号：US20120125967A1

公开(公告)日：2012-05-24

申请号：US13296565

申请日：2011-11-15

申请人： Takaya FURUTA ,  Koji NISHIJIMA ,  Koichi MORI ,  Yasuhiro MATSUMOTO ,  Akio NAKABAYASHI

发明人： Takaya FURUTA ,  Koji NISHIJIMA ,  Koichi MORI ,  Yasuhiro MATSUMOTO ,  Akio NAKABAYASHI

IPC分类号： C03B33/09

CPC分类号： C03B33/0235 ,  C03B33/033 ,  C03B33/091 ,  Y02P40/57 ,  Y10T225/14

摘要： The manufacturing method for a glass film includes, in this order: a cleaving step of dividing a glass film (G) having a band shape into a product glass portion (Ga) and an unnecessary glass portion (Gb); and a collecting step of sequentially shattering the unnecessary glass portion (Gb), and collecting the shattered unnecessary glass portion. The cleaving step is followed by vibration regulating processing of regulating vibrations of the unnecessary glass portion (Gb) in a thickness direction thereof, the vibration regulating processing being executed in at least one location in the longitudinal direction of the unnecessary glass portion (Gb) together with the collecting step executed on a downstream side of the at least one location of the vibration regulating processing.

摘要翻译： 玻璃膜的制造方法依次包括将具有带状的玻璃膜（G）分割成玻璃制品（Ga）和不必要的玻璃部分（Gb）的切割工序; 以及顺序粉碎不需要的玻璃部分（Gb）的收集步骤，以及收集破碎的不需要的玻璃部分。 切割步骤之后是在其厚度方向调节不必要的玻璃部分（Gb）的振动的振动调节处理，在不必要的玻璃部分（Gb）的纵向方向上的至少一个位置处执行振动调节处理 其中在振动调节处理的至少一个位置的下游侧执行收集步骤。

公开(公告)号：US20120017642A1

公开(公告)日：2012-01-26

申请号：US13185673

申请日：2011-07-19

申请人： Yasuo TERANISHI ,  Yasuhiro Matsumoto ,  Taiki Minari ,  Takaya Furuta

发明人： Yasuo TERANISHI ,  Yasuhiro Matsumoto ,  Taiki Minari ,  Takaya Furuta

IPC分类号： C03B21/00 ,  C03B35/00 ,  C03B23/023

CPC分类号： B28D5/0011 ,  B65G2249/04 ,  B65H2801/61 ,  C03B33/0235 ,  C03B33/074 ,  C03B33/091 ,  C03B35/246

摘要： In a cleaving apparatus (1) for a glass film, an initial crack (10), which is formed at a leading end portion of a preset cleaving line (7) of a glass film (G), is propagated along the preset cleaving line (7) by a thermal stress generated in the glass film (G) through localized heating performed along the preset cleaving line (7) and cooling of a heated region resulting from the localized heating. At this time, a resin sheet (R) having higher flexibility than the glass film (G) is arranged in a cleaving region, and the resin sheet (R) is floated by blowing a gas on a lower surface of the resin sheet (R) by a floating unit (3). Then, a preset cleaving portion of the glass film (G) including the preset cleaving line (7) is lifted and supported while being covered with the floated resin sheet (R) from below, and in this state, the glass film (G) is cleaved.

摘要翻译： 在用于玻璃膜的切割装置（1）中，形成在玻璃膜（G）的预设切割线（7）的前端部处的初始裂纹（10）沿着预设的切割线 （7）通过沿着预设的切割线（7）进行的局部加热在玻璃膜（G）中产生的热应力和由局部加热产生的加热区域的冷却。 此时，具有比玻璃膜（G）高的柔软性的树脂片（R）布置在裂开区域中，并且树脂片（R）通过在树脂片材的下表面（R ）通过浮动单元（3）。 然后，包含预定的分割线（7）的玻璃薄膜（G）的预设切割部分被从下方被漂浮的树脂薄片（R）覆盖起来并被支撑，并且在该状态下，玻璃薄膜（G） 被劈开

公开(公告)号：US08102726B2

公开(公告)日：2012-01-24

申请号：US12318417

申请日：2008-12-29

申请人： Yasuhiro Matsumoto ,  Yasuji Koshikawa

发明人： Yasuhiro Matsumoto ,  Yasuji Koshikawa

IPC分类号： G11C7/02

CPC分类号： H01L27/0207 ,  H01L21/26586 ,  H01L21/823412 ,  H01L27/088 ,  H01L27/10894 ,  H01L27/10897

摘要： A semiconductor device includes a plurality of memory cells and a sense amplifier circuit which further includes a plurality of elements such as MOS transistor formed in a well, wherein sensitive element, which are sensitive to dispersion of an impurity density in the well, is distanced from a boundary and are disposed in the center region of the well, while non-sensitive element is disposed in the peripheral region close to the boundary in the well. Since sensitive element requiring precise control of threshold voltage is disposed in the center region having uniform impurity density, and non-sensitive element allowing for less precise control of threshold voltage is disposed in the peripheral region suffering from uneven impurity density, it is possible to effectively use the overall area of the well and to thereby suppress an increase in the layout area of chips.

摘要翻译： 半导体器件包括多个存储单元和读出放大器电路，其还包括形成在阱中的诸如MOS晶体管的多个元件，其中对井中的杂质密度的分散敏感的敏感元件远离 并且设置在井的中心区域中，而非敏感元件设置在靠近井中边界的周边区域中。 由于需要精确控制阈值电压的敏感元件被布置在具有均匀杂质浓度的中心区域中，并且允许不精确控制阈值电压的非敏感元件设置在具有不均匀杂质浓度的周边区域中，因此可以有效地 使用井的整体面积，从而抑制芯片的布局面积的增加。

公开(公告)号：US20120012436A1

公开(公告)日：2012-01-19

申请号：US13259391

申请日：2010-03-12

申请人： Tasuku Nakamoto ,  Kazuhiro Doi ,  Yasuhiro Matsumoto

发明人： Tasuku Nakamoto ,  Kazuhiro Doi ,  Yasuhiro Matsumoto

IPC分类号： G07D11/00

CPC分类号： G07D3/04 ,  G07D9/00 ,  G07D11/0081 ,  G07D11/0084

摘要： In a control unit (50), a predetermined amount of money of fund money that is the money to be dispensed as the change or the like (i.e., predetermined denominations and the number for each denomination or predetermined total amount of the fund money) is set in advance. The control unit (50) controls an insertion unit (12), a transport unit (16), a storing unit (22) and an escrow unit (20), so as to automatically perform a dispensing process for feeding the money corresponding to the predetermined amount of the fund money from the storing unit (22) to a dispensing unit (14), after the control unit (50) serves to perform a depositing process for taking the money into a casing (10) from the exterior thereof via the insertion unit (12), and then feeding the money taken in the casing (10) to the escrow unit (20).

摘要翻译： 在控制单元（50）中，作为变更等（即，预定面额和每个面额的数量或基金的预定总金额）作为要分配的资金的预定金额的资金是 提前设定。 控制单元（50）控制插入单元（12），传送单元（16），存储单元（22）和暂存单元（20），以便自动执行用于馈送对应于 在所述控制单元（50）用于执行用于从其外部经由所述存储单元（20）从所述外部将所述钱从所述外壳中取出的存款处理之后，从所述存储单元（22）到所述分配单元（14）的预定金额的所述资金 插入单元（12），然后将收纳在壳体（10）中的钱送到暂时保留单元（20）。

公开(公告)号：US07940583B2

公开(公告)日：2011-05-10

申请号：US12320892

申请日：2009-02-06

申请人： Yoshiro Riho ,  Jun Suzuki ,  Yasuhiro Matsumoto ,  Shuichi Kubouchi ,  Hiromasa Noda ,  Yasuji Koshikawa

发明人： Yoshiro Riho ,  Jun Suzuki ,  Yasuhiro Matsumoto ,  Shuichi Kubouchi ,  Hiromasa Noda ,  Yasuji Koshikawa

IPC分类号： G11C29/00

CPC分类号： G11C8/08 ,  G11C8/10 ,  G11C29/84

摘要： There are provided are a plurality of memory mats, a sub-word driver that accesses a normal memory cell irrespective of whether a row address to which access is requested is a defective address, a sub-word driver that accesses a redundant memory cell belonging to a memory mat different from the normal memory cell indicated by the row address, when the row address is a defective address. According to the present invention, the normal memory cell and a redundant memory cell belong to memory mats different to each other, and thus the normal memory cell can be accessed concurrently with determining operation of the repair determining circuit.

摘要翻译： 提供有多个存储器垫，子字驱动器，其访问正常存储器单元，而不管请求访问的行地址是否是缺陷地址;子字驱动器，访问属于 当行地址是缺陷地址时，由行地址指示的正常存储单元不同的存储器垫。 根据本发明，正常存储单元和冗余存储单元属于彼此不同的存储器单元，从而可以在确定修复确定电路的操作的同时访问正常存储单元。

公开(公告)号：US20100124134A1

公开(公告)日：2010-05-20

申请号：US12318417

申请日：2008-12-29

申请人： Yasuhiro Matsumoto ,  Yasuji Koshikawa

发明人： Yasuhiro Matsumoto ,  Yasuji Koshikawa

IPC分类号： G11C7/00 ,  H01L29/66 ,  G11C7/06

CPC分类号： H01L27/0207 ,  H01L21/26586 ,  H01L21/823412 ,  H01L27/088 ,  H01L27/10894 ,  H01L27/10897

摘要： A semiconductor device includes a plurality of memory cells and a sense amplifier circuit which further includes a plurality of elements such as MOS transistor formed in a well, wherein sensitive element, which are sensitive to dispersion of an impurity density in the well, is distanced from a boundary and are disposed in the center region of the well, while non-sensitive element is disposed in the peripheral region close to the boundary in the well. Since sensitive element requiring precise control of threshold voltage is disposed in the center region having uniform impurity density, and non-sensitive element allowing for less precise control of threshold voltage is disposed in the peripheral region suffering from uneven impurity density, it is possible to effectively use the overall area of the well and to thereby suppress an increase in the layout area of chips.

摘要翻译： 半导体器件包括多个存储单元和读出放大器电路，其还包括形成在阱中的诸如MOS晶体管的多个元件，其中对井中的杂质密度的分散敏感的敏感元件远离 并且设置在井的中心区域中，而非敏感元件设置在靠近井中边界的周边区域中。 由于需要精确控制阈值电压的敏感元件被布置在具有均匀杂质浓度的中心区域中，并且允许不精确控制阈值电压的非敏感元件设置在具有不均匀杂质浓度的周边区域中，因此可以有效地 使用井的整体面积，从而抑制芯片的布局面积的增加。

公开(公告)号：US20090154275A1

公开(公告)日：2009-06-18

申请号：US12369201

申请日：2009-02-11

申请人： Yasuhiro MATSUMOTO

发明人： Yasuhiro MATSUMOTO

IPC分类号： G11C7/06

CPC分类号： G11C29/02 ,  G11C7/06 ,  G11C11/401 ,  G11C11/4091 ,  G11C29/025 ,  G11C2029/1204 ,  G11C2207/065

摘要： A semiconductor device includes a sense amplifier, a drive circuit that operatively supplies a predetermined potential to the sense amplifier, and disconnection transistors that are provided between the sense amplifier and the drive circuit. According to the present invention, the disconnection transistors can disconnect the sense amplifier from the drive circuit. Therefore, when the sense amplifier is disconnected from the drive circuit during at least a part of a period from when the word line is activated till when the sense amplifier is activated, outflow and inflow of charge from and into the bit line can be stopped immediately.

摘要翻译： 半导体器件包括读出放大器，可操作地向读出放大器提供预定电位的驱动电路以及设置在感测放大器和驱动电路之间的断开晶体管。 根据本发明，断开晶体管可以将感测放大器与驱动电路断开。 因此，当在从字线被激活直到读出放大器被激活的时间段的至少一段时间内，当读出放大器与驱动电路断开连接时，可以立即停止电荷从位线的流出和流入 。