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公开(公告)号：US08174181B2
公开(公告)日：2012-05-08
申请号：US13208169
申请日：2011-08-11
IPC分类号： H01L51/50
CPC分类号： H01L33/06 , B82Y10/00 , C09K11/02 , C09K11/565 , C09K11/883 , H01L33/502 , H01L33/504 , H01S3/169 , Y02B20/181 , Y10S977/95
摘要： A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.
摘要翻译： 一种发光装置，包括嵌入在主矩阵中的量子点群（QD）和导致QD发出二次光的初级光源以及制造这种器件的方法。 选择量子点的尺寸分布以允许从其发射特定颜色的光。 从装置发射的光可以是纯（单色）或混合（多色）颜色，并且可以仅由QDs本身发出的光或者从QD发出的光的混合物和发射的光 从主要来源。 QD理想地由诸如CdSe的未掺杂的半导体组成，并且可以任选地被涂覆以增加光致发光。
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公开(公告)号：US08053972B2
公开(公告)日：2011-11-08
申请号：US12700711
申请日：2010-02-04
IPC分类号： H01L51/00
CPC分类号： H01L33/06 , B82Y10/00 , C09K11/02 , C09K11/565 , C09K11/883 , H01L33/502 , H01L33/504 , H01S3/169 , Y02B20/181 , Y10S977/95
摘要： A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.
摘要翻译： 一种发光装置，包括嵌入在主矩阵中的量子点群（QD）和导致QD发出二次光的初级光源以及制造这种器件的方法。 选择量子点的尺寸分布以允许从其发射特定颜色的光。 从装置发射的光可以是纯（单色）或混合（多色）颜色，并且可以仅由QDs本身发出的光或者从QD发出的光的混合物和发射的光 从主要来源。 QD理想地由诸如CdSe的未掺杂的半导体组成，并且可以任选地被涂覆以增加光致发光。
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公开(公告)号：US07502401B2
公开(公告)日：2009-03-10
申请号：US11187477
申请日：2005-07-22
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/0425 , H01S5/18341 , H01S5/18369 , H01S5/18383 , H01S5/2203 , H01S5/341 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a VCSEL system comprising forming a first mirror, forming a vertical cavity on the first mirror, the vertical cavity including integrated multiple gain regions and forming a transverse p/n junction laterally to the integrated multiple gain regions, wherein forward biasing the transverse p/n junction causes photon emission in the integrated multiple gain regions.
摘要翻译： 本发明提供了一种VCSEL系统，包括形成第一反射镜，在第一反射镜上形成垂直空腔，垂直空腔包括集成的多增益区域，并横向形成横向p / n接合到集成的多增益区域，其中向前偏置 横向p / n结在整合的多增益区域中引起光子发射。
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公开(公告)号：US07264527B2
公开(公告)日：2007-09-04
申请号：US10877698
申请日：2004-06-25
CPC分类号： H01L33/06 , B82Y10/00 , C09K11/02 , C09K11/565 , C09K11/883 , H01L33/502 , H01L33/504 , H01S3/169 , Y02B20/181 , Y10S977/95
摘要： A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.
摘要翻译： 一种发光装置，包括嵌入在主矩阵中的量子点群（QD）和导致QD发出二次光的初级光源以及制造这种器件的方法。 选择量子点的尺寸分布以允许从其发射特定颜色的光。 从装置发射的光可以是纯（单色）或混合（多色）颜色，并且可以仅由QDs本身发出的光或者从QD发出的光的混合物和发射的光 从主要来源。 QD理想地由诸如CdSe的未掺杂的半导体组成，并且可以任选地被涂覆以增加光致发光。
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公开(公告)号：US07209283B2
公开(公告)日：2007-04-24
申请号：US10819666
申请日：2004-04-07
申请人： Falgun D. Patel , Jeffrey N. Miller
发明人： Falgun D. Patel , Jeffrey N. Miller
IPC分类号： H01S3/00
CPC分类号： H01S3/0635 , H01S2301/04
摘要： A flattened gain amplifier has a waveguide with a core doped with at least one species of rare earth ion. The rare earth ion has a gain profile with a first gain in a first wavelength band and a second gain in a second wavelength band. The flattened gain amplifier also has a first grating and a reflective element optically coupled to the core. The positions of the first grating and reflective element along the length define a first amplifying length and a second amplifying length. The ratio of the first amplifying length to the second amplifying length is about equal to the ratio of the second gain to the first gain.
摘要翻译： 扁平化增益放大器具有掺杂有至少一种稀土离子的芯的波导。 稀土离子具有在第一波长带中具有第一增益并且在第二波长带中具有第二增益的增益分布。 扁平化增益放大器还具有光学耦合到芯的第一光栅和反射元件。 沿着长度的第一光栅和反射元件的位置限定第一放大长度和第二放大长度。 第一放大长度与第二放大长度之比约等于第二增益与第一增益的比值。
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公开(公告)号：US06914265B2
公开(公告)日：2005-07-05
申请号：US10329909
申请日：2002-12-26
IPC分类号： H01L33/06 , H01L33/50 , H01L29/227 , H01J63/04
CPC分类号： H01L33/06 , B82Y10/00 , C09K11/02 , C09K11/565 , C09K11/883 , H01L33/502 , H01L33/504 , H01S3/169 , Y02B20/181 , Y10S977/95
摘要： An electronic device comprising a population of quantum dots embedded in a host matrix and a primary light source which causes the dots to emit secondary light of a selected color, and a method of making such a device. The size distribution of the quantum dots is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the dots themselves, or of a mixture of light emitted from the dots and light emitted from the primary source. The dots desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.
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公开(公告)号：US06803719B1
公开(公告)日：2004-10-12
申请号：US09350956
申请日：1999-07-09
IPC分类号： H01L3300
CPC分类号： H01L33/06 , B82Y10/00 , C09K11/02 , C09K11/565 , C09K11/883 , H01L33/502 , H01L33/504 , H01S3/169 , Y02B20/181 , Y10S977/95
摘要： A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.
摘要翻译： 一种发光装置，包括嵌入在主矩阵中的量子点群（QD）和导致量子点发射二次光的主光源和制造这种装置的方法。 选择量子点的尺寸分布以允许从其发射特定颜色的光。 从装置发射的光可以是纯（单色）或混合（多色）颜色，并且可以仅由QDs本身发出的光或者从QD发出的光的混合物和发射的光 从主要来源。 QD理想地由诸如CdSe的未掺杂的半导体组成，并且可以任选地被涂覆以增加光致发光。
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38.发明授权Electrically-pumped, multiple active region vertical-cavity surface-emitting laser (VCSEL) 有权电泵浦，多有源区垂直腔表面发射激光器（VCSEL）公开(公告)号：US06771680B2
公开(公告)日：2004-08-03
申请号：US10278003
申请日：2002-10-22
IPC分类号： H01S500
CPC分类号： H01S5/18341 , B82Y20/00 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/1833 , H01S5/18358 , H01S5/18366 , H01S5/18369 , H01S5/18383 , H01S5/18397 , H01S5/3095 , H01S5/34306 , H01S5/426 , H01S2301/176
摘要： An electrically-pumped vertical-cavity surface-emitting laser (VCSEL) has multiple active regions. Embodiments of the invention provide an electrically-pumped VCSEL having a number of different p-i-n junction and electrode arrangements, which, in various embodiments, allow independent biasing of the multiple active regions, and, in other embodiments, allow simplified electrical connections.
摘要翻译： 电泵浦垂直腔表面发射激光器（VCSEL）具有多个有源区域。 本发明的实施例提供具有多个不同p-i-n结和电极布置的电泵浦VCSEL，其在各种实施例中允许多个有源区域的独立偏置，并且在其它实施例中允许简化的电连接。
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